Bizarre Patents
Wearable Device For Feeding and Observing Birds and Other Flying Animals
A device for feeding and observing flying animals comprising a hat, a support mounted on the hat and extending outward from the hat, and a feeder mounted on the support.
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| Number | Title | Issue Date |
| 8173463 | Method of fabricating a light emitting device with a p-type dopant Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and second contact parts are connected to the light emitting device to a... | 05/08/2012 |
| 8114693 | Method of fabricating solid state gas dissociating device by laser doping A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A ther... | 02/14/2012 |
| 8084284 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A complementary metal oxide semiconductor (CMOS) device and a method for fabricating the same are provided. The CMOS image sensor includes: a first conductive type substrate including a trench; a channel stop layer formed by using a first conductive type epitaxial l... | 12/27/2011 |
| 8062918 | Surface treatment to improve resistive-switching characteristics This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profi... | 11/22/2011 |
| 8026117 | Semiconductor light emitting device with lateral current injection in the light emitting region A semiconductor light emitting device includes an active region, an n-type region, and a p-type region comprising a portion that extends into the active region. The active region may include multiple quantum wells separated by barrier layers, and the p-type extensio... | 09/27/2011 |
| 8012783 | Semiconductor element and method for manufacturing same The object of the present invention is to provide a semiconductor element containing an n-type gallium nitride based compound semiconductor and a novel electrode that makes an ohmic contact with the semiconductor. The semiconductor element of the present inve... | 09/06/2011 |
| 7993947 | Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties a... | 08/09/2011 |
| 7964425 | Method for manufacturing p type gallium nitride based device A method for manufacturing a p-type gallium nitride-based (GaN) device is disclosed. In accordance with the method, an Mg in an MgNx layer disposed on p-type gallium nitride is diffused into the p-type gallium nitride by a heat treatment to dope the p-typ... | 06/21/2011 |
| 7892872 | Silicon/germanium oxide particle inks, inkjet printing and processes for doping semiconductor substrates Highly uniform silica nanoparticles can be formed into stable dispersions with a desirable small secondary particle size. The silican particles can be surface modified to form the dispersions. The silica nanoparticles can be doped to change the particle properties a... | 02/22/2011 |
| 7863067 | Silicon substrate with reduced surface roughness The present disclosure provides a method for fabricating a semiconductor device including providing a semiconductor substrate comprising a first surface and a second surface, wherein at least one imaging sensor is located adjacent the first surface, activating a dop... | 01/04/2011 |
| 7863068 | Method for making a light emitting diode having a P-N junction doped with one or more luminescent activator ions A light emitting diode (LED) includes a p-n junction containing luminescent activator ions. The visible emission from the activator ions preferably complementing the band edge emission of the LED in order to produce an overall white emission from the LED. In a prefe... | 01/04/2011 |
| 7785911 | Semiconductor laser diode with current restricting layer and fabrication method thereof Provided are a semiconductor laser diode having a current confining layer and a method of fabricating the same. The semiconductor laser diode includes a substrate, a first material layer deposited on the substrate, an active layer which is deposited on the first mat... | 08/31/2010 |
| 7759148 | Method for manufacturing semiconductor optical device A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after f... | 07/20/2010 |
| 7723139 | Quantum well intermixing Embodiments of a method of quantum well intermixing (QWI) comprise providing a wafer comprising upper and lower epitaxial layers, which each include barrier layers, and a quantum well layer disposed between the upper and lower epitaxial layers, applying at least one... | 05/25/2010 |
| 7700394 | Method for manufacturing silicon wafer method There is obtained a silicon wafer which has a large diameter, where no slip generated therein in a wide range of a density of oxygen precipitates even though a heat treatment such as SLA or FLA is applied thereto, and which has high strength. First, by inputt... | 04/20/2010 |
| 7482190 | Micromechanical strained semiconductor by wafer bonding One aspect disclosed herein relates to a method for forming a strained semiconductor structure. In various embodiments of the method, a number of recesses are formed in a surface of a silicon substrate using a Local Oxidation of Silicon (LOCOS) process, and a silico... | 01/27/2009 |
| 7473570 | Method for forming epitaxial layers of gallium nitride-based compound semiconductors The present invention relates to a structure and a manufacturing method of epitaxial layers of gallium nitride-based compound semiconductors with less dislocation densities. Surface treatment is carried out first on the surface of a substrate using reaction precurso... | 01/06/2009 |
| 7396745 | Formation of ultra-shallow junctions by gas-cluster ion irradiation Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams. ... | 07/08/2008 |
| 7384808 | Fabrication method of high-brightness light emitting diode having reflective layer A method for fabricating a high brightness LED structure is disclosed herein, which comprises at least the following steps. First, a first layered structure is provided by sequentially forming a light generating structure, a non-alloy ohmic contact layer, and a firs... | 06/10/2008 |
| 7381267 | Heteroatomic single-crystal layers A method for forming, by epitaxy, a heteroatomic single-crystal semiconductor layer on a single-crystal semiconductor wafer, the crystal lattices of the layer and of the wafer being different, including forming, before the epitaxy, in the wafer surface, at least one... | 06/03/2008 |
| 7371596 | Parallel-beam scanning for surface patterning of materials A system and method for parallel-beam scanning a surface. An energetic beam source emits an energetic collimated beam which is received by an optical device, comprising: one or more optical media, operable to receive the emitted beam, such as two pairs of coordinate... | 05/13/2008 |
| 7361518 | Semiconductor element, semiconductor device, and method for fabrication thereof A nitride semiconductor growth layer is laid on a substrate having an engraved region provided with a depressed portion. ... | 04/22/2008 |
| 7357877 | Dispersion of nanowires of semiconductor material A method of manufacturing nanowires (104) is provided, according to which method the nanowires are prepared by anodic etching a semiconductor substrate (10) with an alternating current density, so as to create first regions (4) and second region... | 04/15/2008 |
| 7341787 | Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to... | 03/11/2008 |
| 7341628 | Method to reduce crystal defects particularly in group III-nitride layers and substrates Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium ... | 03/11/2008 |
| 7332416 | Methods to manufacture contaminant-gettering materials in the surface of EUV optics Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposite... | 02/19/2008 |
| 7321117 | Optical particulate sensor in oil quality detection An oil quality sensor apparatus includes a housing that includes an oil flow path through which oil flows through the housing. One or more photo-detectors can be provided in association and a plurality of light-emitting devices located within the housing and proxima... | 01/22/2008 |
| 7314794 | Low-cost high-performance planar back-gate CMOS A method of fabricating a high-performance planar back-gate CMOS structure having superior short-channel characteristics and reduced capacitance using processing steps that are not too lengthy or costly is provided. Also provided is a high-performance planar back-ga... | 01/01/2008 |
| 7259397 | Self-scanning light-emitting element array chip Provided is a self-scanning light-emitting element array chip structured on a substrate using Si. A lattice mismatching buffer layer (32) is formed on a Si substrate (30). On the lattice mismatching buffer layer (32), successively stacked are an... | 08/21/2007 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduc... | 08/21/2007 |
| 7259099 | Strongly textured atomic ridge nanowindows The present invention provides a MOSFET device comprising: a substrate including a plurality of atomic ridges, each of the atomic ridges including a semiconductor layer comprising Si and an dielectric layer comprising a Si compound; a plurality nanogrooves between t... | 08/21/2007 |
| 7256426 | Rare earth element-doped silicon/silicon dioxide lattice structure Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substra... | 08/14/2007 |
| 7256062 | Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the p... | 08/14/2007 |
| 7251264 | Distributed bragg reflector for optoelectronic device This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the... | 07/31/2007 |
| 7229899 | Process for the transfer of a thin film A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further,... | 06/12/2007 |
| 7223641 | Semiconductor device, method for manufacturing the same, liquid crystal television and EL television A method for manufacturing a semiconductor device by a small number of processes and by a means with high usability of materials to have high-definition and a gate insulating with a high step coverage property is disclosed. According to the present invention, a meth... | 05/29/2007 |
| 7208338 | Method of manufacturing semiconductor light emitting device A method of manufacturing a ridge type semiconductor light emitting device includes: a process of epitaxially growing a multi-layered semiconductor layer having at least a first conductive type cladding layer, an active layer, a second conductive type first cladding... | 04/24/2007 |
| 7201057 | High-temperature reduced size manometer A pressure-sensing device and method for making and using such device having a temperature differential between two portions of the device is disclosed. A solid-state heat pump, such as a thermo-electric cooler (TEC), is used to pump heat from a cold portion to a ho... | 04/10/2007 |
| 7202181 | Etching of substrates of light emitting devices Fabrication of a light emitting device includes etching of a substrate of the light emitting device. The etch may be an aqueous etch sufficient to increase an amount of light extracted through the substrate. The etch may be a direct aqueous etch of a silicon carbide... | 04/10/2007 |
| 7180100 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 02/20/2007 |
