Quotables
"Rail travel at high speeds is not possible because passengers, unable to breathe, would die of asphyxia."
Dionysius Lardner, Professor of Natural Philosophy and Astronomy at University College, London ; 1830
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8173462 | Manufacturing method of nitride crystalline film, nitride film and substrate structure A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mas... | 05/08/2012 |
| 8101447 | Light emitting diode element and method for fabricating the same The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxia... | 01/24/2012 |
| 8030108 | Epitaxial growth of in-plane nanowires and nanowire devices Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device proc... | 10/04/2011 |
| 7985610 | Solar cell, method of forming emitter layer of solar cell, and method of manufacturing solar cell A method for forming emitter layer of a solar cell includes preparing a substrate including a first impurity of a first conductive type, diffusing a second impurity of a second conductive type opposite to the first conductive type in the substrate to form a first em... | 07/26/2011 |
| 7981709 | Semiconductor device and method for fabricating the same A method for fabricating a semiconductor device includes the steps of forming a SiC film, forming trenches at a surface of the SiC film, heat-treating the SiC film with silicon supplied to the surface of the SiC film, and obtaining a plurality of macrosteps to const... | 07/19/2011 |
| 7955880 | Method of producing semiconductor optical device A method of producing a semiconductor optical device includes a first step of growing a stacked semiconductor layer including a first III-V group compound semiconductor layer for an active layer on a substrate; a second step of forming a silicon oxide film on the st... | 06/07/2011 |
| 7858417 | Dielectric VCSEL gain guide A vertical cavity surface emitting laser having a dielectric gain guide. The gain guide may provide current confinement, device isolation and possibly optical confinement. The first mirror and an active region may be grown. A pattern may be placed on or near the act... | 12/28/2010 |
| 7799593 | Light emitting diode structure and method for fabricating the same The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zone... | 09/21/2010 |
| 7799592 | Tri-gate field-effect transistors formed by aspect ratio trapping Semiconductor structures include a trench formed proximate a substrate including a first semiconductor material. A crystalline material including a second semiconductor material lattice mismatched to the first semiconductor material is formed in the trench. Process ... | 09/21/2010 |
| 7754513 | Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures Latch-up resistant semiconductor structures formed on a hybrid substrate and methods of forming such latch-up resistant semiconductor structures. The hybrid substrate is characterized by first and second semiconductor regions that are formed on a bulk semiconductor ... | 07/13/2010 |
| 7749786 | Methods of forming imager systems Some embodiments include methods of forming voids within semiconductor constructions. In some embodiments the voids may be utilized as microstructures for distributing coolant, for guiding electromagnetic radiation, or for separation and/or characterization of mater... | 07/06/2010 |
| 7618836 | Method for manufacturing semiconductor optical device A method for manufacturing a semiconductor optical device comprises: forming a groove on a first semiconductor layer; forming a second semiconductor layer containing aluminum in the groove; forming a third semiconductor layer on the first semiconductor layer and the... | 11/17/2009 |
| 7598105 | Light emitting diode structure and method for fabricating the same The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zone... | 10/06/2009 |
| 7560298 | Methods for producing a tunable vertical cavity surface emitting laser Methods are disclosed for producing a tunable vertical cavity surface emitting laser (VCSEL) using photonic crystals and an electrostrictive material that includes a hologram with a narrow filter function. Photonic crystals are formed such that the active region of ... | 07/14/2009 |
| 7410819 | Nitride semiconductor light-emitting device and method for producing same In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitr... | 08/12/2008 |
| 7371596 | Parallel-beam scanning for surface patterning of materials A system and method for parallel-beam scanning a surface. An energetic beam source emits an energetic collimated beam which is received by an optical device, comprising: one or more optical media, operable to receive the emitted beam, such as two pairs of coordinate... | 05/13/2008 |
| 7351625 | Recessed transistors and methods of forming the same According to some embodiments of the invention, there is provided recessed transistors without semiconductor substrate fences formed on the sidewalls of a device isolation layer and methods of forming the same. The recessed transistors and methods provide a way of r... | 04/01/2008 |
| 7351633 | Method of fabricating semiconductor device using selective epitaxial growth A method of fabricating a semiconductor device using selective epitaxial growth (SEG) is disclosed. The method comprises; forming a seed window exposing a portion of a substrate through an interlayer insulating layer, growing a single crystal silicon SEG layer in th... | 04/01/2008 |
| 7338827 | Nitride semiconductor laser and method for fabricating the same A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respe... | 03/04/2008 |
| 7335959 | Device with stepped source/drain region profile Embodiments of the invention provide a transistor with stepped source and drain regions. The stepped regions may provide significant strain in a channel region while minimizing current leakage. The stepped regions may be formed by forming two recesses in a substrate... | 02/26/2008 |
| 7320898 | Semiconductor laser device and method for fabricating the same A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semi... | 01/22/2008 |
| 7319076 | Low resistance T-shaped ridge structure A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge secti... | 01/15/2008 |
| 7303963 | Method for manufacturing cell transistor Disclosed herein is a method of manufacturing a cell transistor which can achieve an improvement in a short-channel effect of a cell transistor as well as an improvement in a refresh characteristic of the transistor, and can also prevent a reduction in the threshold... | 12/04/2007 |
| 7294519 | Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ... | 11/13/2007 |
| 7294520 | Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer (3) over a substrate (1) or over an initial layer (2), which mask layer has a ... | 11/13/2007 |
| 7285431 | Method for manufacturing a GaN based LED of a black hole structure This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate m... | 10/23/2007 |
| 7256130 | Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide ma... | 08/14/2007 |
| 7250320 | Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire ... | 07/31/2007 |
| 7198970 | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask mater... | 04/03/2007 |
| 7198971 | Nitride semiconductor thin film having fewer defects and method of growing the same The present invention relates to a nitride semiconductor thin film having less defects and a method of growing the same. According to the present invention, the nitride semiconductor thin film with lower defect density can be manufactured by forming grooves on a sub... | 04/03/2007 |
| 7166878 | Image sensor with deep well region and method of fabricating the image sensor An imager, an image sensor included in the imager and a method of fabricating the image sensor are provided. The image sensor having a substrate with front and back sides to produce image data, includes a transparent conductive coating arranged on the back side of t... | 01/23/2007 |
| 7163876 | Method for manufacturing group-III nitride compound semiconductor, and group-III nitride compound semiconductor device In the epitaxial growth process in which each growth region D is zoned by a mask 2 formed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the mask 2 betwee... | 01/16/2007 |
| 7157297 | Method for fabrication of semiconductor device On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of t... | 01/02/2007 |
| 7141444 | Production method of III nitride compound semiconductor and III nitride compound semiconductor element A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a trench/mesa such that layer different from the first Group III nitride ... | 11/28/2006 |
| 7135372 | Strained silicon device manufacturing method A method of manufacturing a microelectronic device includes forming a p-channel transistor on a silicon substrate by forming a poly gate structure over the substrate and forming a lightly doped source/drain region in the substrate. An oxide liner and nitride spacer ... | 11/14/2006 |
| 7134179 | Process of forming a capacitative audio transducer A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layer... | 11/14/2006 |
| 7135348 | Semiconductor light emitting device and fabrication method thereof A semiconductor light emitting device is fabricated by forming a mask having an opening on a substrate, forming a crystal layer having a tilt crystal plane tilted from the principal plane of the substrate by selective growth from the opening of the mask, and forming... | 11/14/2006 |
| 7125736 | Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate To improve crystallographic property of a nitride III-V compound semiconductor layer grown on a sapphire substrate, a plurality of recesses are made on a major surface of the sapphire substrate, and the nitride III-V compound semiconductor layer is grown thereon. At... | 10/24/2006 |
| 7122392 | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one ... | 10/17/2006 |
| 7112461 | Fabrication process for integrated circuit having photodiode device An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a... | 09/26/2006 |
