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Class 438/43 - Tapered etching


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the material removal step is by etching
No. of patents: 165
Last issue date: 03/29/2011


1          
NumberTitleIssue Date
7915064Processing for overcoming extreme topography
A process for overcoming extreme topographies by first planarizing a cavity in a semiconductor substrate in order to create a planar surface for subsequent lithography processing. As a result of the planarizing process for extreme topographies, subsequent lithograph...
03/29/2011
7888153Method of manufacturing vertical light emitting device
Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on ...
02/15/2011
7781246Method of manufacturing vertical light emitting device
Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on ...
08/24/2010
7749785Manufacturing method of group III nitride semiconductor light-emitting device
The present invention provides a manufacturing method of a group III nitride semiconductor light-emitting device, including a lamination step of forming a plurality of lamination films including a group III nitride semiconductor on a substrate, in which a substrate ...
07/06/2010
7425275Shadow mask and method of fabricating vertically tapered structure using the shadow mask
A method of fabricating a vertically tapered structure. The method includes placing a spacer layer at a predetermined area on a wafer, placing a mask layer at a predetermined area on the spacer layer, and over-etching the spacer layer, by etching a certain area belo...
09/16/2008
7410863Methods of forming and using memory cell structures
A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator...
08/12/2008
7339758Etching method, a substrate with a plurality of concave portions, a microlens substrate, a transmission screen and a rear projection
An etching method is disclosed. The etching method includes the steps of: preparing a substrate 5; forming first and second films 61, 62 each having predetermined internal stress on the substrate so that the internal stresses of the first and second fi...
03/04/2008
7332416Methods to manufacture contaminant-gettering materials in the surface of EUV optics
Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposite...
02/19/2008
7247939Metal filled semiconductor features with improved structural stability
A method for forming a metal filled semiconductor feature with improved structural stability including a semiconductor wafer having an anisotropically etched opening formed through a plurality of dielectric insulating layers revealing a first etching resistant layer...
07/24/2007
7172914Method of making uniform oxide layer
A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial lay...
02/06/2007
7125736Method of crystallizing a nitride III-V compound semiconductor layer on a sapphire substrate
To improve crystallographic property of a nitride III-V compound semiconductor layer grown on a sapphire substrate, a plurality of recesses are made on a major surface of the sapphire substrate, and the nitride III-V compound semiconductor layer is grown thereon. At...
10/24/2006
7118933Method for manufacturing optical bench, optical bench, optical module, silicon wafer substrate in which wiring and groove are formed, and wafer
An optical bench on which an optical component is mounted comprises an Si substrate made of a silicon wafer, a groove disposed on the Si substrate and designed to mount the optical component thereon, and a metal thin-film wiring for driving the optical component or ...
10/10/2006
7112512Method of manufacturing liquid crystal display
On a substrate, the pattern of the first conductive layer is defined, that is, a gate line combination including gate pads, scanning lines and gate electrodes. A gate insulating layer, a semiconductor layer, a doped semiconductor layer and a second conductive layer ...
09/26/2006
7109527Semiconductor chip for optoelectronics and method for production thereof
A semiconductor chip, particularly a radiation-emitting semiconductor chip, comprises an active thin-film layer in which a photon-emitting zone is formed, and a carrier substrate for the thin-film layer is arranged at a side of the thin-film layer faces away from th...
09/19/2006
7105908SRAM cell having stepped boundary regions and methods of fabrication
A semiconductor device comprises a substrate. In addition, the semiconductor device comprises an active region and an isolation region. The active region is in the substrate and comprises a semiconductor material. The isolation region is also in the substrate, adjac...
09/12/2006
7104590Vehicle trim panel with integral nibbed armrest
A door trim panel for a door frame of a motor vehicle. The door trim panel includes a main body portion adapted to be removably secured to the door frame and a bolster removably secured to the main body portion. The bolster covers an access opening defined in the ma...
09/12/2006
7041541Method for producing a semiconductor component, and semiconductor component produced by the same
A method for producing a gate head which can be precisely scaled and for reducing parasitic capacities, for a semiconductor component comprising an at least approximately T-shaped electrode. ...
05/09/2006
7012835Flash memory data correction and scrub techniques
In order to maintain the integrity of data stored in a flash memory that are susceptible to being disturbed by operations in adjacent regions of the memory, disturb events cause the data to be read, corrected and re-written before becoming so corrupted that valid da...
03/14/2006
6949394Optical semiconductor device and method of fabricating the same
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and es...
09/27/2005
6924087Polymer microneedles
A method for producing microneedles. The method including disposing a first layer of a radiation sensitive polymer on to a working surface and selectively irradiating the first layer such that the first layer has at least one irradiated region and at least one non-i...
08/02/2005
6913705Manufacturing method for optical integrated circuit having spatial reflection type structure
A manufacturing method for an optical integrated circuit including a spatial reflection type structure having a perpendicular end surface and an inclined surface formed in an optical waveguide layer. The manufacturing method includes the steps of applying a first ph...
07/05/2005
6909122Semiconductor light-emitting device with isolation trenches, and method of fabricating same
According to the present invention, a light-emitting semiconductor device has light-emitting elements separated by isolation trenches, preferably on two sides of each light-emitting element. The device may be fabricated by forming a single band-shaped diffusion regi...
06/21/2005
6909733Semiconductor laser device
A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of Alx1Ga1−x1As and a p-type cladding layer of (AlxGa1−x)yIn1−yP for defining a barrier height. The p-...
06/21/2005
6907150Etching process for micromachining crystalline materials and devices fabricated thereby
The present invention provides an optical microbench having intersecting structures etched into a substrate. In particular, microbenches in accordance with the present invention include structures having a planar surfaces formed along selected crystallographic plane...
06/14/2005
6897139Group III nitride compound semiconductor device
A titanium layer and a titanium nitride layer are successively laminated on a substrate and a group III nitride compound semiconductor layer is further formed thereon. When the titanium layer is removed in the condition that a sufficient film thickness is given to t...
05/24/2005
6879306Scanned display systems using color laser light sources
A display system for providing a user viewable visible color image includes a display for receiving color laser light so that the display, in response to color laser light, produces a viewable visible colored image; a plurality of different color laser light sources...
04/12/2005
6875629III group nitride based semiconductor element and method for manufacture thereof
A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystalli...
04/05/2005
6869813Chip-type LED and process of manufacturing the same
A chip-type LED including a LED element and a tubular vessel accommodating the LED element therein, wherein the vessel has an upper opening and a lower opening, the LED element is positioned between the upper opening and the lower opening such that the LED element e...
03/22/2005
6858907Method of fabricating semiconductor device having notched gate
A semiconductor device includes: a silicon substrate; a source/drain region formed in the substrate including a lightly doped region and an adjacent heavily doped region, the depth of the heavily doped region being greater than the depth of the lightly doped region;...
02/22/2005
6849473Semiconductor light-emitting device and method for manufacturing thereof
In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electrode is form...
02/01/2005
6841472Semiconductor device and method of fabricating the same
A semiconductor device is provided with a semiconductor substrate, a gate insulation film formed on the semiconductor substrate, a gate electrode formed on the gate insulation film and having a portion increasing upward in the length along a gate length direction, a...
01/11/2005
6829265Semiconductor laser array
The subject of the disclosed art is to prevent a short circuit between plural electrodes caused by soldering in the assembling process for a semiconductor laser element. The constitution for improving the subject is as follows. A semiconductor laser device comprises...
12/07/2004
6818564Method for etching a tapered bore in a silicon substrate, and a semiconductor wafer comprising the substrate
A semiconductor wafer comprises an SOI comprising a device layer on an oxide layer supported on a handle layer. Micro-mirrors are formed in the device layer, and access bores extend through the handle layer and the oxide layer to the micro-mirrors for accommodating ...
11/16/2004
6773947Method of manufacturing semiconductor device including an opening formed by a laser
According to the present invention, of the resist film applied to the entire surface of the silicon substrate, the part on the electrode pattern is removed and an opening shaped like a dish in which the diameter of the upper part is larger than that of the lower par...
08/10/2004
6767756Method of manufacturing tapered optical waveguide
Disclosed is a method for manufacturing a tapered optical waveguide through which waveguides of different sizes are connected with each other optically. In the method, a photo-resist pattern having an inclined profile is formed on the core layer by means of a gray-s...
07/27/2004
6750077Semiconductor device and method of fabricating the same
A release layer composed of AlGaAs, a strain layer, a strain compensation layer composed of an InGaAs, and a component layer are formed on a GaAs substrate. The component layer includes a DBR film. A recess for defining a bent region is formed in the component layer...
06/15/2004
6723576Disposing method for semiconductor elements
An active-matrix type organic EL display which uses transistors with less variation of characteristics (transistors in which active layer is a single crystal semiconductor) is made on a large area of a transparent base board at low cost. Plural unit of fine construc...
04/20/2004
6695455Fabrication of micromirrors on silicon substrate
A process for fabricating micro-mirrors on a silicon substrate is disclosed, which can markedly improve the flatness of micro-mirrors, reduce the scattering of incident light, and increase S/N ratio. The fabrication process comprises the steps of: forming...
02/24/2004
6670211Semiconductor laser device
A exemplary method of fabricating a semiconductor laser device includes forming an electrode on each of a top surface and a bottom surface of a laminated structure comprised of semiconductor materials, then cleaving the laminated structure to form facets ...
12/30/2003
6664145Semiconductor device and manufacturing method thereof
By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device...
12/16/2003
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