Class 438/422 - Enclosed cavity

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process wherein the air-gap dielectric is in the form of
No. of patents: 234
Last issue date: 05/08/2012

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Number	Title	Issue Date
8173513	Method for manufacturing a semiconductor pressure sensor Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so ...	05/08/2012
8148235	Methods of manufacturing semiconductor devices Methods of forming air gaps between interconnects of integrated circuits and structures thereof are disclosed. A first insulating material is deposited over a workpiece, and a second insulating material having a sacrificial portion is deposited over the first insula...	04/03/2012
8133794	Semiconductor structure and method of manufacture In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an orientation-dependent etch to form a first cavity, a second cavit...	03/13/2012
8058138	Gap processing Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least ...	11/15/2011
8048760	Semiconductor structure and method of manufacture In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric mat...	11/01/2011
8034693	Method for fabricating semiconductor device A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming ...	10/11/2011
8026150	Semiconductor device manufacturing method and storage medium A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming ...	09/27/2011
7985654	Planarization stop layer in phase change memory integration A key hole structure and method for forming a key hole structure to form a pore in a memory cell. The method includes forming a first dielectric layer on a semiconductor substrate having an electrode formed therein, forming an isolation layer on the first dielectric...	07/26/2011
7947566	Method and apparatus for making coplanar isolated regions of different semiconductor materials on a substrate A semiconductor processing method includes providing a substrate, forming a plurality of semiconductor layers in the substrate, each of the semiconductor layers being distinct and selected from different groups of semiconductor element types. The semiconductor layer...	05/24/2011
7932158	Formation of improved SOI substrates using bulk semiconductor wafers The present invention relates to a semiconductor-on-insulator (SOI) substrate having one or more device regions. Each device region comprises at least a base semiconductor substrate layer and a semiconductor device layer with a buried insulator layer located therebe...	04/26/2011
7927963	Integrated circuit structure, design structure, and method having improved isolation and harmonics Disclosed are embodiments of a semiconductor structure, a design structure for the semiconductor structure and a method of forming the semiconductor structure. The embodiments reduce harmonics and improve isolation between the active semiconductor layer and the subs...	04/19/2011
7927964	Methods of forming electrically insulative materials, methods of forming low k dielectric regions, and methods of forming semiconductor constructions Some embodiments include methods of forming low k dielectric regions between electrically conductive lines. A construction may be formed to have a plurality of spaced apart electrically conductive lines, and to have sacrificial material between the electrically cond...	04/19/2011
7879683	Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay A method and apparatus for generating air gaps in a dielectric material of an interconnect structure. One embodiment provides a method for forming a semiconductor structure comprising depositing a first dielectric layer on a substrate, forming trenches in the first ...	02/01/2011
7855123	Method of integrating an air gap structure with a substrate A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sa...	12/21/2010
7811896	Semiconductor structure and method of manufacture In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method to manufacture a semiconductor structure includes forming a cavity in a substrate. A portion of the substrate is doped, or a doped...	10/12/2010
7781301	Method of fabricating semiconductor device A method of fabricating a semiconductor device according to one embodiment includes: forming an interlayer sacrificial film and an insulating film located thereon above a semiconductor substrate having a semiconductor element, the interlayer sacrificial film having ...	08/24/2010
7754578	Process for manufacturing a wafer by annealing of buried channels A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures....	07/13/2010
7704851	Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device includes providing a semiconductor substrate with gate structures. A sacrificial insulating layer is formed between the gate structures at a height lower than that of the gate structures such that a portion of each ga...	04/27/2010
7666754	Method and system for forming an air gap structure A method for forming an air gap structure on a substrate is described. The method comprises forming a sacrificial layer on a substrate, wherein the sacrificial layer comprises a decomposable material that thermally decomposes at a thermal decomposition temperature a...	02/23/2010
7585744	Method of forming a seal for a semiconductor device In one embodiment, a reflowable layer 51 is deposited over a semiconductor device 10 and reflowed in an environment having a pressure approximately equal to that of atmosphere to form a seal layer 52. The seal layer 52 seals all openings ...	09/08/2009
7507634	Method for fabricating a localize SOI in bulk silicon substrate including changing first trenches formed in the substrate into unclosed empty space by applying heat treatment To change a plurality of trenches to one flat empty space by two-dimensionally forming the trenches on the surface of a semiconductor substrate and then applying heat treatment to the semiconductor substrate. ...	03/24/2009
7439092	Thin film splitting method A method of fabricating thin films of semiconductor materials by implanting ions in a substrate composed of at least two different elements at least one of which can form a gaseous phase on bonding with itself and/or with impurities includes the following steps:	10/21/2008
7422940	Layer arrangement A process for producing a layer arrangement, in which a plurality of electrically conductive structures are formed on a substrate, a first electrically insulating layer is formed on the plurality of electrically conductive structures, in such a manner than trenches ...	09/09/2008
7396736	Magnetic sensor of very high sensitivity A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of the capacitor includes a doped region of a semiconductor substrate. ...	07/08/2008
7396732	Formation of deep trench airgaps and related applications A method for forming deep trench or via airgaps in a semiconductor substrate is disclosed comprising the steps of patterning a hole in the substrate, partly fill said hole with a sacrificial material (e.g. poly-Si), depositing spacers on the sidewalls of the unfille...	07/08/2008
7396739	Method for integrating an electronic component or similar into a substrate A method for integrating an electronic component or the like into a substrate includes following process steps: formation of a dielectric insulating layer on the front side of a substrate; complete back-etching of an area of the substrate from the back of the substr...	07/08/2008
7394144	Trench semiconductor device and method of manufacturing it Consistent with an example embodiment, a reduced surface field effect type (RESURF) semiconductor device is manufactured having a drift region over a drain region. Trenches are formed through openings in mask. A trench insulating layer is deposited on the sidewalls ...	07/01/2008
7378306	Selective silicon deposition for planarized dual surface orientation integration A semiconductor process and apparatus provide a planarized hybrid substrate (225) having a more uniform polish surface (300) by thickening an SOI semiconductor layer (210) in relation to a previously or subsequently formed epitaxial silicon laye...	05/27/2008
7371653	Metal interconnection structure of semiconductor device and method of forming the same Provided is a metal interconnection structure of a semiconductor device, having: a lower metal layer disposed on an insulating layer formed on a semiconductor device; a contact plug disposed on the lower metal layer; a supporting layer disposed to surround the conta...	05/13/2008
7364964	Method of fabricating an interconnection layer above a ferroelectric capacitor A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H2 attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor per...	04/29/2008
7361991	Closed air gap interconnect structure A closed air gap interconnect structure is described. The structure includes discrete regions of a permanent support dielectric under the interconnect lines so that the lines are substantially surrounded by air except for the discrete regions of the support dielectr...	04/22/2008
7358148	Adjustable self-aligned air gap dielectric for low capacitance wiring An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect adjacent a second interconnect on an interconnect level, spacers formed along adjacent sides of the first and second interconnects, and an air gap formed b...	04/15/2008
7351648	Methods for forming uniform lithographic features Methods for fabricating a semiconductor device include forming a first layer on an underlying layer, forming a hardmask on the first layer, and patterning holes through the hardmask and first layer. An overhang is formed extending over sides of the holes. A conforma...	04/01/2008
7335599	Method and apparatus for making coplanar isolated regions of different semiconductor materials on a substrate A semiconductor processing method includes providing a substrate, forming a plurality of semiconductor layers in the substrate, each of the semiconductor layers being distinct and selected from different groups of semiconductor element types. The semiconductor layer...	02/26/2008
7335968	High permeability composite films to reduce noise in high speed interconnects A transmission line circuit provides a structure for improved transmission line operation on integrated circuits. The transmission line circuit includes a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed ...	02/26/2008
7332406	Air gap interconnect structure and method A low-k dielectric sacrificial material is formed within a microelectronic structure covered with a layer defining an exhaust vent. At an appropriate time, the underlying sacrificial material is decomposed and exhausted away through the exhaust vent. Residue from th...	02/19/2008
7326603	Semiconductor device, method of manufacturing semiconductor substrate, and method of manufacturing semiconductor device A semiconductor device includes a semiconductor substrate that has an oxide film selectively formed on a part thereof; a semiconductor layer that is formed on the oxide film by epitaxial growth; a first gate electrode that is formed on the semiconductor layer; first...	02/05/2008
7327016	High permeability composite films to reduce noise in high speed interconnects An electronic system is provided with a structure for improved transmission line operation on integrated circuits. The structure for transmission line operation includes a first layer of electrically conductive material on a substrate. A first layer of insulating ma...	02/05/2008
7319274	Methods for selective integration of airgaps and devices made by such methods Methods for the production of airgaps in semiconductor devices and devices produced using such methods are disclosed. An example semiconductor device includes a damascene stack formed using such methods. The damascene stack includes a patterned dielectric layer incl...	01/15/2008
7300823	Apparatus for housing a micromechanical structure and method for producing the same Apparatus for housing a micromechanical structure, and a method for producing the housing. The apparatus has a substrate having a main side on which the micromechanical structure is formed, a photo-resist material structure surrounding the micromechanical structure ...	11/27/2007

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Class 438/422 - Enclosed cavity