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| Number | Title | Issue Date |
| 8053262 | Method for manufacturing nitride semiconductor laser element A method for manufacturing a nitride semiconductor laser element having a nitride semiconductor layer including at least an active layer provided on a substrate, a pair of cavity planes formed on the nitride semiconductor layer, and a protruding part where part of t... | 11/08/2011 |
| 8017423 | Method for manufacturing a thin film structure The present invention discloses a method for manufacturing thin film structure, which comprises the following steps: providing a substrate having a first recess and a second recess formed therein with the first recess being deeper than the second recess; depositing ... | 09/13/2011 |
| 8008103 | Light emitting device having light extraction structure and method for manufacturing the same A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor laye... | 08/30/2011 |
| 7998772 | Method to reduce leakage in a protection diode structure A method for forming a protection diode utilizes processing operations and materials used in the formation of the CMOS integrated circuit device and provides a protection diode used in CMOS integrated circuit devices to direct charged particles to benign locations a... | 08/16/2011 |
| 7977132 | Extension of contact pads to the die edge via electrical isolation Light emitting diode (LED) dies are fabricated by forming LED layers including a first conductivity type layer, a light-emitting layer, and a second conductivity type layer. Trenches are formed in the LED layers that reach at least partially into the first conductiv... | 07/12/2011 |
| 7935554 | Semiconductor light emitting device and method of manufacturing the same Provided are a semiconductor light emitting device having a nano pattern and a method of manufacturing the semiconductor light emitting device. The semiconductor light emitting device includes: a semiconductor layer comprising a plurality of nano patterns, wherein t... | 05/03/2011 |
| 7919342 | Patterned inorganic LED device A method of making an inorganic light-emitting diode display having a plurality of light-emitting elements including providing a substrate, and forming a plurality of patterned electrodes over the substrate. A raised area is formed around each patterned electrode to... | 04/05/2011 |
| 7919343 | Group III nitride crystal and method for surface treatment thereof, group III nitride stack and manufacturing method thereof, and group III nitride semiconductor device and manufacturing method thereof A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III... | 04/05/2011 |
| 7846756 | Nanoimprint enhanced resist spacer patterning method A method of making a device is disclosed including: forming a first hard mask layer over an underlying layer; forming a first imprint resist layer over the underlying layer; forming first features over the first hard mask layer by bringing a first imprint template i... | 12/07/2010 |
| 7811846 | Semiconductor devices grown in spherical cavity arrays and its preparation method A method for fabricating an array of semiconductor devices comprising the steps of providing a non-metallic substrate, placing a layer of spheres on said substrate, reducing diameter of the spheres, encapsulating the spheres in a matrix of rigid material, finishing ... | 10/12/2010 |
| 7803645 | Semiconductor light-emitting device and a method for manufacturing the same The present invention is to provide a light-emitting device, a laser diode, formed without using the mechanical cleavage, and a process for manufacturing the device. The process comprises, after stacking semiconductor layers of the first cladding layer, the active l... | 09/28/2010 |
| 7763485 | Laser facet pre-coating etch for controlling leakage current A method for etching facets of a laser die prior to coating in such a way as to control the formation of oxides and metallic films on the facet is disclosed. In one embodiment, the method includes placing a wafer on which the laser is included in the interior volume... | 07/27/2010 |
| 7700393 | Method of manufacturing enhancement type semiconductor probe and information storage device having the semiconductor probe using the same A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process param... | 04/20/2010 |
| 7655490 | Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor g... | 02/02/2010 |
| 7615391 | Solar cell and method of fabricating the same A method of fabricating a solar cell forms a large number of grooves on a first main surface of a p-type silicon single crystal substrate sliced out from a silicon single crystal ingot as described below. First an edge portion of a groove-carving blade is projected ... | 11/10/2009 |
| 7611917 | Methods of forming light emitting devices with active layers that extend into opened pits Light emitting devices include an active region comprising a plurality of layers and a pit opening region on which the active region is disposed. The pit opening region is configured to expand a size of openings of a plurality of pits to a size sufficient for the pl... | 11/03/2009 |
| 7491563 | Nitridation of STI fill oxide to prevent the loss of STI fill oxide during manufacturing process A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjace... | 02/17/2009 |
| 7485484 | Group III-V crystal Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a su... | 02/03/2009 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7432605 | Overlay mark, method for forming the same and application thereof An overlay mark for checking the alignment accuracy between a lower layer and a lithography process for defining an upper layer is described, including a part of the lower layer having two first x-directional trenches, two first y-directional trenches, two second x-... | 10/07/2008 |
| 7432120 | Method for realizing a hosting structure of nanometric elements Method for manufacturing a hosting structure of nanometric elements comprising the steps of depositing on an upper surface of a substrate, of a first material, a block-seed having at least one side wall. Depositing on at least one portion of sad surface and on the b... | 10/07/2008 |
| 7422918 | Method of making a support for light emitting diodes which are interconnected in a three-dimensional environment The present invention relates to a method of making supports for light emitting diodes, wherein rigid substrates are used as supports for light emitting diodes, it being proposed, in particular, to render the substrates more fragile in order to make certain zones of... | 09/09/2008 |
| 7402529 | Method of applying cladding material on conductive lines of MRAM devices A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive mater... | 07/22/2008 |
| 7402501 | Method of manufacturing a coaxial trace in a surrounding material, coaxial trace formed thereby, and semiconducting material containing same A method of manufacturing a coaxial trace (100) within a surrounding material (190) includes: providing a first substrate (191, 410) and a second substrate (192, 1010) composed of the surrounding material; forming a first portion (101,... | 07/22/2008 |
| 7399652 | Method for manufacturing a micro-electro-mechanical device, in particular an optical microswitch, and micro-electro-mechanical device thus obtained A method for manufacturing a micro-electro-mechanical device, which has supporting parts and operative parts, includes providing a first semiconductor wafer, having a first layer of semiconductor material and a second layer of semiconductor material arranged on top ... | 07/15/2008 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semico... | 07/08/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7348213 | Method for forming component mounting hole in semiconductor substrate The present invention provides to a substrate for a semiconductor device, in which electric characteristics to high-speed signals are enhanced by facilitating the mounting of a circuit component, such as a decoupling capacitor, fabricated separately from the substra... | 03/25/2008 |
| 7338827 | Nitride semiconductor laser and method for fabricating the same A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respe... | 03/04/2008 |
| 7334630 | Closed-loop microchannel cooling system Apparatus and methods according to the present invention utilize micropumps that are capable of generating high pressure and flow without moving mechanical parts and the associated generation of unacceptable electrical and acoustic noise, as well as the associated r... | 02/26/2008 |
| 7332416 | Methods to manufacture contaminant-gettering materials in the surface of EUV optics Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposite... | 02/19/2008 |
| 7319045 | Gallium-nitride based light emitting diode structure and fabrication thereof A method for fabricating GaN-based LED is provided. The method first forms a first contact spreading metallic layer on top of the texturing surface of the p-type ohmic contact layer. The method then forms a second and a third contact spreading metallic layers on top... | 01/15/2008 |
| 7316543 | Electroosmotic micropump with planar features An electroosmotic micropump having a plurality of thin, closely-spaced, approximately planar, transversel aligned partitions formed in or on a substrate, among which electroosmotic flow (EOF) is generated. Electrodes are located within enclosed inlet and outlet mani... | 01/08/2008 |
| 7300810 | Solid-state imaging device and method of manufacturing the same A solid-state imaging device is provided in which noise to an image signal is restrained and miniaturization is facilitated in a peripheral circuit formation region. A solid-state imaging device includes a pixel formation region 4 and a peripheral circ... | 11/27/2007 |
| 7294552 | Electrical contact for a MEMS device and method of making A method for making a subsurface electrical contact on a micro-electrical-mechanical-systems (MEMS) device. The contact is formed by depositing a layer of polycrystalline silicon onto a surface within a cavity buried under a device silicon layer. The polycrystalline... | 11/13/2007 |
| 7291510 | Method for manufacturing semiconductor device The inventive method for manufacturing a semiconductor device is a method for manufacturing a semiconductor device using irradiation with laser light to partition a substrate having semiconductor layers formed thereon, with gallium contained in at least one of the s... | 11/06/2007 |
| 7274106 | Packaged electroosmotic pumps using porous frits for cooling integrated circuits An integrated electroosmotic pump may be incorporated in the same integrated circuit package with a re-combiner, and an integrated circuit chip to be cooled by fluid pumped by the electroosmotic pump. ... | 09/25/2007 |
| 7274720 | Semiconductor laser element having InGaAs compressive-strained quantum-well active layer In a semiconductor laser element, a lower cladding layer, a lower optical waveguide layer, an InGaAs compressive-strain quantum-well active layer, an upper optical waveguide layer, and an upper cladding layer are formed in this order in a stripe-shaped region on a s... | 09/25/2007 |
| 7261812 | Multi-column separation devices and methods Chromatographic separation devices include multiple batch-processed columns joined by a body structure and adapted to perform parallel analyses. Both slurry-packed and monolithic column embodiments are provided. One or more liquid-permeable frits of various types ma... | 08/28/2007 |
| 7235483 | Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected ma... | 06/26/2007 |
