Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 7799654 | Reduced refractive index and extinction coefficient layer for enhanced photosensitivity An image sensor device includes a semiconductor substrate and a plurality of pixels on the substrate. An etch-stop layer is formed over the pixels and has a thickness less than about 600 Angstroms. The image sensor device further includes an interlayer dielectric (I... | 09/21/2010 |
| 7384810 | Image display device and method for manufacturing the same Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-cr... | 06/10/2008 |
| 7297630 | Methods of fabricating via hole and trench A method of fabricating a via and a trench is disclosed. A disclosed method comprises: forming a via hole and a trench in a interlayer dielectric layer on a semiconductor substrate where a predetermined device is formed; depositing a thin Hf layer on the substrate; ... | 11/20/2007 |
| 7265010 | High performance vertical PNP transistor method The invention includes a method and resulting structure for fabricating high performance vertical NPN and PNP transistors for use in BiCMOS devices. The resulting high performance vertical PNP transistor includes an emitter region including silicon and germanium, an... | 09/04/2007 |
| 7253079 | Coplanar mounting member for a MEM sensor A coplanar mounting member for a MEM sensor includes a first surface coplanar with a connection pad on the surface of a MEM sensor board containing the MEM sensor control circuit; a second surface inclined to the surface of the board for mounting a MEM sensor and an... | 08/07/2007 |
| 7148511 | Active matrix substrate, electro-optical device, electronic device, and method for manufacturing an active matrix substrate An active matrix substrate includes a load circuit including a first active element performing a switching operation of a load, the first active element including a semiconductor film of a substantially polycrystalline state; a drive circuit including a second activ... | 12/12/2006 |
| 6596605 | Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same A method of forming polycrystalline silicon germanium gate electrode is disclosed. The method include the steps of forming gate insulation layer on a substrate, forming a polycrystalline silicon layer on the gate insulation layer and making a plasma dopin... | 07/22/2003 |
| 6479306 | Method for manufacturing semiconductor device A semiconductor device and a method for manufacturing the semiconductor device mountable with high density, which includes a simplified process but is capable of reducing a defect rate. A plurality of semiconductor chips of different kinds (processor chip... | 11/12/2002 |
| 6291309 | Semiconductor device and method for manufacturing the same A semiconductor device which is mounted with a plurality of semiconductor chips. The fraction defective is low when the device is manufactured, and the efficiency of inspection is high. A method for manufacturing such a semiconductor device is also disclo... | 09/18/2001 |
| 5849629 | Method of forming a low stress polycide conductors on a semiconductor chip A method of forming low resistivity conductive lines on a semiconductor substrate is disclosed. In practicing the method a multichamber tool is used to advantage by forming a first doped polysilicon layer on the surface of a substrate, forming a second un... | 12/15/1998 |
| 5145795 | Semiconductor device and method therefore An improved high frequency dielectrically isolated (DIC) transistor (100) or integrated circuit is obtained by providing a highly doped single crystal semiconductor region (112) coupled to the device reference terminal (16') and extending between front (9... | 09/08/1992 |
| 5134090 | Method of fabricating patterned epitaxial silicon films utilizing molecular beam epitaxy A method of producing patterned epitaxial silicon films and devices fabricated thereby is described. The method forms a first layer of a refractory material on a substrate and pattern delineates the first layer. Silicon is then deposited at a temperature ... | 07/28/1992 |
| 4949146 | Structured semiconductor body A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to deli... | 08/14/1990 |
| 4861426 | Method of making a millimeter wave monolithic integrated circuit A method is provided of making a millimeter wave monolithic integrated ciit that allows for device isolation during epitaxial growth and integral heat sink with supporting circuitry on the substrate.... | 08/29/1989 |
| 4583282 | Process for self-aligned buried layer, field guard, and isolation A process is described for producing isolated semiconductor devices in a common substrate which have self-aligned and pre-located isolation walls, buried layers, and channel-stops. The isolation walls are formed from a stacked arrangement of a dielectric ... | 04/22/1986 |
| 4573257 | Method of forming self-aligned implanted channel-stop and buried layer utilizing non-single crystal alignment key A process is described for fabricating self-aligned buried doped regions in semiconductor devices and integrated circuits which avoids any need for delineation of the buried doped regions in the active portions of the device. Avoiding delineation improves... | 03/04/1986 |
| 3997378 | Method of manufacturing a semiconductor device utilizing monocrystalline-polycrystalline growth In the manufacture of a semiconductor device, when an epitaxially-grown layer is formed on a semiconductor substrate partially formed with an oxide, a polycrystalline layer is formed on the oxide; the polycrystalline part is used as an isolation region fo... | 12/14/1976 |
