Class 438/415 - Thermomigration

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making junction isolated laterally spaced semiconductor
No. of patents: 30
Last issue date: 10/21/2008

Number	Title	Issue Date
7439421	Soybean variety XB22N06 According to the invention, there is provided a novel soybean variety designated XB22N06. This invention thus relates to the seeds of soybean variety XB22N06, to the plants of soybean XB22N06 to plant parts of soybean variety XB22N06 and to methods for producing a s...	10/21/2008
6790744	Monolithically integrated solid-state sige thermoelectric energy converter for high speed and low power circuits A method and structure for a semiconductor structure that includes a substrate having at least one integrated circuit heat generating structure is disclosed. The invention has at least one integrated circuit cooling device on the substrate adjacent the heat generati...	09/14/2004
6703292	Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Semiconductor devices are known comprising a multiple p-n junction RESURF semiconductor material (10) that provides a voltage-sustaining space-charge zone when depleted from a blocking junction (40). Charge balance is important in the alternating p-type (...	03/09/2004
6544811	Micromachined device having electrically isolated components and a method for making the same A micromachined structure having electrically isolated components is formed by thermomigrating a dopant through a substrate to form a doped region within the substrate. The doped region separates two portions of the substrate. The dopant is selected such ...	04/08/2003
6495421	Manufacture of semiconductor material and devices using that material A method is described of manufacturing a semiconductor material having a zone (200) with p-conductivity type and n-conductivity type regions with dopant concentrations and dimensions such that, when the n- and p-conductivity type regions are depleted of f...	12/17/2002
6300156	Process for fabricating micromechanical devices A process for fabricating a MEMS device is disclosed. The device has at least one hinged element. The MEMS device including the hinged element is delineated and defined on a semiconductor substrate. The substrate is placed device side down in a chamber. T...	10/09/2001
5902120	Process for producing spatially patterned components A process is disclosed for producing spatially patterned components from a body. On the backside of the body, a retardation layer with openings is provided for retarding a removal of the material of the body, and areas of migration-capable material are de...	05/11/1999
5714393	Diode-connected semiconductor device and method of manufacture A compact diode-connected semiconductor device (20) and a method of manufacturing the field effect transistor (10). A doped layer (44) is formed in a semiconductor substrate (41) which serves as a drain extension region. An oxide layer (46) is formed on t...	02/03/1998
5480811	Isolation of photogenerated carriers within an originating collecting region A photosensing array and a method of making the same wherein the array includes a semiconductor substrate having collecting regions and recrystallized regions. Each collecting region is operatively associated with a photosensing element. Adjacent collecti...	01/02/1996
4472728	Imaging X-ray spectrometer An X-ray spectrometer for providing imaging and energy resolution of an X-ray source comprised of a thick silicon wafer (10) having an embedded matrix or grid of aluminum completely through the wafer fabricated, for example, by thermal migration. The alum...	09/18/1984
4370179	Method of making a monolithic complementary Darlington amplifier utilizing diffusion and epitaxial decomposition A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween...	01/25/1983
4203781	Laser deformation of semiconductor junctions A method of changing the geometry of p-n or isotype junctions in semiconductor crystal material by laser or electron beam melting through a portion of the junction is described. Two adjoining regions are doped at different levels and a laser or electron b...	05/20/1980
4190852	Photovoltaic semiconductor device and method of making same A photovoltaic semiconductor device which is a horizontal multijunction series-array solar battery with a monocrystalline body and having elongate zones of aluminum doped silicon passed entirely through N-type silicon layers by Thermomigration process to ...	02/26/1980
4141757	Uniform thermomigration utilizing sample movement The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by a combination of noncentro-symmetric rotation about an axis displaced from the central axis of the ...	02/27/1979
4108685	Semiconductor device manufacture An improved method of initiating the moving of a molten zone of an aluminum rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies alloying the aluminum metal to the semiconductor material of t...	08/22/1978
4104786	Method of manufacture of a semiconductor device Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite conductivity type. Is...	08/08/1978
4081293	Uniform thermomigration utilizing sample movement The geometric configuration of a molten zone migrating through a solid body of semiconductor material during thermal gradient zone melting is maintained by noncentro-symmetric rotation of the solid body about an axis displaced therefrom, by centro-symmetr...	03/28/1978
4063966	Method for forming spaced electrically isolated regions in a body of semiconductor material An array of vapor deposited metal wires is migrated by TGZM through a body of semiconductor material to divide the body into a plurality of individual regions electrically isolated from each other. The preferred crystal orientations of the surface on whic...	12/20/1977
4042448	Post TGZM surface etch Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting process. A mask is applied to the surface of the wafer, but th...	08/16/1977
4040868	Semiconductor device manufacture An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material to form a planar region embodies the alloying of the metal to the semiconductor material of the sur...	08/09/1977
4040171	Deep diode zeners A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermal migration of metal "wires" through the body to form a region of...	08/09/1977
4031607	Minority carrier isolation barriers for semiconductor devices A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produc...	06/28/1977
4006040	Semiconductor device manufacture An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering process enables one t...	02/01/1977
3998661	Uniform migration of an annular shaped molten zone through a solid body Annular regions of a predetermined type conductivity are produced in a body of semiconductor material by a temperature gradient zone melting process embodying both noncentro-symmetric rotation of the body as well as secondary rotation of the body about it...	12/21/1976
3995309	Isolation junctions for semiconductor devices Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions is recrystallized s...	11/30/1976
3988763	Isolation junctions for semiconductors devices Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions is recrystallized s...	10/26/1976
3988762	Minority carrier isolation barriers for semiconductor devices A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produc...	10/26/1976
3982269	Semiconductor devices and method, including TGZM, of making same A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufacturing the same. T...	09/21/1976
3982268	Deep diode lead throughs A body of semiconductor material has two major opposed surfaces. A region of recrystallized semiconductor material having solid solubility of a dopant material therein is disposed within, and extends entirely through the body and intersects the two major ...	09/21/1976
3979230	Method of making isolation grids in bodies of semiconductor material An isolation grid is produced by the migration of a metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the surface, wire size...	09/07/1976

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Class 438/415 - Thermomigration