Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8409894 | Solid state light emitting semiconductor structure and epitaxy growth method thereof A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer... | 04/02/2013 |
| 8372671 | Solid state devices with semi-polar facets and associated methods of manufacturing Solid state lighting devices with semi-polar or non-polar surfaces and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and an epitaxial silicon struct... | 02/12/2013 |
| 8334155 | Substrate for growing a III-V light emitting device A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds... | 12/18/2012 |
| 8288186 | Substrate for growing a III-V light emitting device A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds... | 10/16/2012 |
| 8202750 | Method of manufacturing semiconductor device, semiconductor laser, optical pickup, and optical disk device with nitride type group III-V compound semiconductor layer A method of manufacturing a semiconductor laser having an end face window structure, by growing over a substrate a nitride type Group III-V compound semiconductor layer including an active layer including a nitride type Group III-V compound semiconductor containing ... | 06/19/2012 |
| 7977131 | Method for manufacturing nano-array electrode and photoelectric conversion device using same The present invention provides a method of manufacturing a nano-array electrode with a controlled nano-structure by filling a compound having an electron-accepting structure or an electron donating structure into the fine pores of an anodic-oxide porous alumina film... | 07/12/2011 |
| 7968359 | Thin-walled structures Various embodiments provide thin-walled structures and methodologies for their formation. In one embodiment, the thin-walled structure can be formed by disposing a semiconductor material in a patterned aperture using a selective growth mask that includes a plurality... | 06/28/2011 |
| 7901968 | Heteroepitaxial deposition over an oxidized surface Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the presence of oxygen between a single crystal structure and a SiGe heteroepit... | 03/08/2011 |
| 7897422 | Semiconductor light-emitting device and a method to produce the same A new structure of a semiconductor optical device and a method to produce the device are disclosed. One embodiment of the optical device of the invention provides a blocking region including, from the side close to the mesa, a p-type first layer and a p-type second ... | 03/01/2011 |
| 7781245 | Method to fabricate semiconductor optical device A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thick... | 08/24/2010 |
| 7741138 | Semiconductor device and fabricating method thereof A semiconductor device and fabricating method thereof are disclosed, by which channel mobility is enhanced and by which effect of flicker noise can be minimized. Embodiments relate to a method of fabricating a semiconductor device which includes forming a first epi-... | 06/22/2010 |
| 7615390 | Method and apparatus for forming expitaxial layers The present invention provides a method of depositing epitaxial layers based on Group IV elements on a silicon substrate by Chemical Vapor Deposition, wherein nitrogen or one of the noble gases is used as a carrier gas, and the invention further provides a Chemical ... | 11/10/2009 |
| 7563630 | Method for fabricating a semiconductor laser device that includes growing current confinement layers and a mesa side surface A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement s... | 07/21/2009 |
| 7521274 | Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional featu... | 04/21/2009 |
| 7514282 | Patterned silicon submicron tubes An array of submicron silicon (Si) tubes is provided with a method for patterning submicron Si tubes. The method provides a Si substrate, and forms a silicon dioxide film overlying the Si substrate. An array of silicon dioxide rods is formed from the silicon dioxide... | 04/07/2009 |
| 7456040 | Method for producing semiconductor optical device The present invention is to provide a method for manufacturing a semiconductor optical device, in which the unevenness of the burying of the mesa structure may be reduced. The process is configured to form a mask extending along [011] direction on the cap layer, to ... | 11/25/2008 |
| 7418166 | Device and approach for integration of optical devices and waveguides therefor Optical devices having integrated waveguide and active areas are realized using a crystallization approach involving the inhibition of defects typically associated with liquid-phase crystalline growth of lattice mismatched materials. According to one example embodim... | 08/26/2008 |
| 7393762 | Charge-free low-temperature method of forming thin film-based nanoscale materials and structures on a substrate A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and... | 07/01/2008 |
| 7372080 | Gan semiconductor device Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device (50) is disclosed as an example of the GaN-based ... | 05/13/2008 |
| 7361576 | Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO) A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned ma... | 04/22/2008 |
| 7351617 | Semiconductor device and a method of manufacturing the same To provide a technique required for purifying the interface between an active layer and an insulating film. On a substrate (101), a gate wiring (103) is formed and the surface thereof is covered with a gate oxide film (104). Then, a first insula... | 04/01/2008 |
| 7338827 | Nitride semiconductor laser and method for fabricating the same A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respe... | 03/04/2008 |
| 7327770 | Nitride semiconductor laser device To prevent deterioration induced by wire bonding in a laser device incorporating a semiconductor laser element having a nitride semiconductor laid on top of a nitride semiconductor substrate, the position at which a wire (301) is bonded to an electrode (11... | 02/05/2008 |
| 7323722 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first cond... | 01/29/2008 |
| 7319076 | Low resistance T-shaped ridge structure A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge secti... | 01/15/2008 |
| 7306959 | Methods of fabricating integrated optoelectronic devices This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take ... | 12/11/2007 |
| 7303933 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 12/04/2007 |
| 7294519 | Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ... | 11/13/2007 |
| 7285431 | Method for manufacturing a GaN based LED of a black hole structure This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate m... | 10/23/2007 |
| 7251264 | Distributed bragg reflector for optoelectronic device This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the... | 07/31/2007 |
| 7244964 | Light emitting device An n-type layer of the opposite conduction type composed of n-GaN is formed between a light emitting layer and a p-type cladding layer composed of p-AlGaN. The bandgap of the n-type layer of the opposite conduction type is larger than the bandgap of the light emitti... | 07/17/2007 |
| 7218660 | Single-mode vertical cavity surface emitting lasers and methods of making the same In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure in... | 05/15/2007 |
| 7198970 | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask mater... | 04/03/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7195998 | Compound semiconductor device and manufacturing method thereof A compound semiconductor device including: an isolated mesa section on which an upper surface having two pairs of parallel sides is formed by mesa etching a compound semiconductor wafer, wherein the mesa section is formed from at least a forward mesa surface which i... | 03/27/2007 |
| 7193273 | Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same A method of selectively forming contact regions on a substrate having a plurality of exposed regions includes selectively forming a contact region on each of the exposed regions of the substrate. During formation, each contact region has a first growth rate in a fir... | 03/20/2007 |
| 7192884 | Method for manufacturing semiconductor laser device Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ... | 03/20/2007 |
| 7180103 | III-V power field effect transistors A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applicat... | 02/20/2007 |
| 7172914 | Method of making uniform oxide layer A method of forming a semiconductor structure includes forming an isolation region in a semiconductor substrate. A first oxide layer is on the substrate, a first sacrificial layer is on the first oxide layer, and a first nitride layer is on the first sacrificial lay... | 02/06/2007 |
| 7160747 | Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact... | 01/09/2007 |
