Did You Know...
...that while attempting to develop a super strong glue, 3M employee Spencer Silver accidentally developed a glue that was so weak it would barely hold two pieces of paper together? However, his colleague Art Fry needed the glue. Fry sang with his church choir and marked the pages of his hymnal with small scraps of paper that often fell out. He used Silver's glue to hold the papers in place. Today we call this invention Post-it Notes.
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| Number | Title | Issue Date |
| 8043929 | Semiconductor substrate and method for production thereof Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second ... | 10/25/2011 |
| 8017492 | Method for fabricating semiconductor device and semiconductor device with separation along peeling layer A method for fabricating a semiconductor device according to the present invention is a method for fabricating a semiconductor device including a substrate layer including a plurality of first regions each having an active region and a plurality of second regions ea... | 09/13/2011 |
| 7998828 | Method of forming metal ion transistor A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first ele... | 08/16/2011 |
| 7977202 | Reducing device performance drift caused by large spacings between active regions A method of forming an integrated circuit structure includes providing a semiconductor substrate; and forming a first and a second MOS device. The first MOS device includes a first active region in the semiconductor substrate; and a first gate over the first active ... | 07/12/2011 |
| 7960243 | Method of forming a semiconductor device featuring a gate stressor and semiconductor device A semiconductor device (10) is formed in a semiconductor layer (12). A gate stack (16,18) is formed over the semiconductor layer and comprises a first conductive layer (22) and a second layer (24) over the first layer. The first la... | 06/14/2011 |
| 7892939 | Threshold voltage consistency and effective width in same-substrate device groups The prevention of active area loss in the STI model is disclosed which results in an improved device performance in devices manufactured according to the process flow. The process generally shared among the multiple various embodiments inverts the current convention... | 02/22/2011 |
| 7838387 | Method for manufacturing SOI wafer A silicon wafer includes a principal face for forming electronic devices; an end region; and a tapered region which is located between the principal face and the end region, in which the thickness of the silicon wafer is gradually reduced, and which has a slope that... | 11/23/2010 |
| 7807545 | Method for manufacturing SIMOX wafer A SIMOX wafer having a BOX layer with a thin film thickness is obtained without a reduction in productivity or deterioration in quality. In a method for manufacturing a SIMOX wafer comprising: a step of forming a first ion-implanted layer in a silicon wafer; a step ... | 10/05/2010 |
| 7790565 | Semiconductor on glass insulator made using improved thinning process Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the impla... | 09/07/2010 |
| 7767538 | Method for manufacturing semiconductor device It is made possible to form a silicon nitride film, an aluminum oxide film and a transition metal high-k insulation film of high quality. A manufacturing method includes: forming an insulation film having at least one kind of bonds selected out of silicon-nitrogen b... | 08/03/2010 |
| 7741190 | Method of selective oxygen implantation to dielectrically isolate semiconductor devices using no extra masks A method of fabricating integrated circuit structures utilizes selective oxygen implantation to dielectrically isolate semiconductor structures using no extra masks. Existing masks are utilized to introduce oxygen into bulk silicon with subsequent thermal oxide grow... | 06/22/2010 |
| 7696059 | Method for manufacturing semiconductor substrate A consistent reduction in temperature in an SOI substrate manufacturing process is achieved. A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below an... | 04/13/2010 |
| 7682926 | Semiconductor device and method of fabricating the same A method of fabricating a semiconductor device includes forming an ion implanted region on a semiconductor substrate in a cell/core region. The semiconductor substrate is selectively etched to form a recess. The recess exposes a boundary of the ion implanted region.... | 03/23/2010 |
| 7645676 | Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures Semiconductor structures and methods for suppressing latch-up in bulk CMOS devices. The semiconductor structure comprises a shaped-modified isolation region that is formed in a trench generally between two doped wells of the substrate in which the bulk CMOS devices ... | 01/12/2010 |
| 7632735 | Process for manufacturing silicon-on-insulator substrate A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon substrate so that a region corresponding to the oxide layer has a greate... | 12/15/2009 |
| 7601606 | Method for reducing the trap density in a semiconductor wafer The invention provides methods for reducing trap densities at interfaces in a multilayer semiconductor wafer, specifically trap densities between an active layer and an insulating layer under the active layer. The methods comprise exposing wafers to high temperature... | 10/13/2009 |
| 7541257 | Semiconductor device having three-dimensional construction and method for manufacturing the same A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensi... | 06/02/2009 |
| 7504314 | Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom The invention relates generally to a method for fabricating oxygen-implanted semiconductors, and more particularly to a method for fabricating oxygen-implanted silicon-on-insulation (“SOI”) type semiconductors by cutting-up regions into device-sized pieces prior... | 03/17/2009 |
| 7476594 | Methods of fabricating silicon nitride regions in silicon carbide and resulting structures A method is disclosed for fabricating a silicon nitride regions in silicon carbide. The method includes the steps of implanting a sufficient dose and energy of nitrogen ions into a silicon carbide substrate maintained at a temperature above about 350° C. to produce... | 01/13/2009 |
| 7473614 | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop layer may comprise silicon nitride, nitrogen-doped silicon dioxide, or s... | 01/06/2009 |
| 7456080 | Semiconductor on glass insulator made using improved ion implantation process Methods and apparatus for producing a semiconductor on glass (SOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to multiple ion implantation processes to create an exfoliation layer in the donor semiconductor wafer, wherein at... | 11/25/2008 |
| 7425495 | Method of manufacturing semiconductor substrate and semiconductor device A method of manufacturing a semiconductor substrate and semiconductor device is disclosed and comprises forming a first monocrystalline semiconductor layer on a semiconductor base material, forming a second monocrystalline semiconductor layer covering the first mono... | 09/16/2008 |
| 7422956 | Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers A semiconductor device comprising a substrate having a first crystal orientation is provided. A first insulating layer overlies the substrate and a plurality of silicon layers overlie the first insulating layer. A first silicon layer comprises silicon having a secon... | 09/09/2008 |
| 7413959 | Semiconductor device including a planarized surface and method thereof A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The substrate is etched to form a trench region, and a medium material l... | 08/19/2008 |
| 7378330 | Cleaving process to fabricate multilayered substrates using low implantation doses A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of ... | 05/27/2008 |
| 7361570 | Semiconductor device having an implanted precipitate region and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor and an integrated circuit including the same. The semiconductor device 100, among other things, may include a substrate 110 having a lattice structure and having an... | 04/22/2008 |
| 7358161 | Methods of forming transistor devices associated with semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 04/15/2008 |
| 7354864 | Method of producing semiconductor device A method of producing a semiconductor device is disclosed, in which a through hole is formed in the upper surface of a semiconductor substrate from the lower surface thereof, and an opening of a desired size is formed in a desired position on the upper surface of th... | 04/08/2008 |
| 7348255 | Semiconductor device and method for fabricating a semiconductor device A semiconductor structure has an active region on a substrate, and recessed portions are formed at lower edges of lateral portions of the semiconductor structure. Patterned first insulation layers for device isolation are buried into the recessed portions. Second in... | 03/25/2008 |
| 7348253 | High-quality SGOI by annealing near the alloy melting point A method of forming a low-defect, substantially relaxed SiGe-on-insulator substrate material is provided. The method includes first forming a Ge-containing layer on a surface of a first single crystal Si layer which is present atop a barrier layer that is resistant ... | 03/25/2008 |
| 7348260 | Method for forming a relaxed or pseudo-relaxed useful layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a mate... | 03/25/2008 |
| 7348264 | Plasma doping method A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a d... | 03/25/2008 |
| 7338857 | Increasing adherence of dielectrics to phase change materials A phase change material is formed over a dielectric material. An impurity is introduced into the dielectric to improve the adherence of said dielectric to said phase change material. ... | 03/04/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7329583 | Method of fabricating isolated semiconductor devices in epi-less substrate An structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does... | 02/12/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7323370 | SOI device with reduced junction capacitance An SOI FET comprising a silicon substrate having silicon layer on top of a buried oxide layer having doped regions and an undoped region is disclosed. The doped region has a dielectric constant different from the dielectric constant of the doped regions. A body also... | 01/29/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7320925 | SOI substrate, semiconductor substrate, and method for production thereof A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region. A method for the production of a... | 01/22/2008 |
| 7317226 | Patterned SOI by oxygen implantation and annealing Methods for forming a patterned SOI region in a Si-containing substrate is provided which has geometries of about 0.25 μm or less. Specifically, one method includes the steps of: forming a patterned dielectric mask on a surface of a Si-containing substrate, wherein... | 01/08/2008 |
