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| Number | Title | Issue Date |
| 8173512 | Forming structures that include a relaxed or pseudo-relaxed layer on a substrate A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on th... | 05/08/2012 |
| 8153500 | Method of fabricating an epitaxially grown layer on a composite structure A method of fabricating materials by epitaxy by epitaxially growing at least one layer of a material upon a composite structure that has at least one thin film bonded to a support substrate and a bonding layer of oxide formed by deposition between the support substr... | 04/10/2012 |
| 8114754 | Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the ... | 02/14/2012 |
| 8110478 | Method for manufacturing semiconductor substrate, display panel, and display device If the size of a single crystal silicon layer attached is not appropriate, even when a large glass substrate is used, the number of panels to be obtained cannot be maximized. Therefore, in the present invention, a substantially quadrangular single crystal semiconduc... | 02/07/2012 |
| 8101496 | Method of manufacturing ball grid array type semiconductor device A BGA type semiconductor device having high reliability is offered. A pad electrode is formed on a surface of a semiconductor substrate and a glass substrate is bonded to the surface of the semiconductor substrate. A via hole is formed from a back surface of the sem... | 01/24/2012 |
| 8012845 | Insulating film pattern, method for manufacturing the same, and method for manufacturing thin film transistor substrate using the same In an insulating film pattern, a first pattern part is formed at one surface of the insulating film pattern to form a source electrode, a drain electrode, and a semiconductor layer of the thin film transistor. The first pattern part is recessed in one surface of the... | 09/06/2011 |
| 8003483 | Method for manufacturing SOI substrate Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, form... | 08/23/2011 |
| 7989305 | Method for manufacturing SOI substrate using cluster ion A method is demonstrated to manufacture SOI substrates with high throughput while resources can be effectively used. The present invention is characterized by the feature in which the following process A and process B are repeated. The process A includes irradiation... | 08/02/2011 |
| 7989304 | Method for transferring semiconductor element, method for manufacturing semiconductor device, and semiconductor device A transistor formed on a monocrystalline Si wafer is temporarily transferred onto a first temporary supporting substrate. The first temporarily supporting substrate is heat-treated at high heat so as to repair crystal defects generated in a transistor channel of the... | 08/02/2011 |
| 7947564 | Method of fabricating a mixed microtechnology structure and a structure obtained thereby A method of fabricating a mixed microtechnology structure includes providing a provisional substrate including a sacrificial layer on which is formed a mixed layer including at least first patterns of a first material and second patterns of a second material differe... | 05/24/2011 |
| 7902034 | Method of manufacturing SOI substrate and method of manufacturing semiconductor device A first substrate of single-crystal silicon within which is formed an embrittled layer and over a surface of which is formed a first insulating film is provided; a second insulating film is formed over a surface of a second substrate; at least one surface of either ... | 03/08/2011 |
| 7897477 | Method of forming an isolation structure Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of... | 03/01/2011 |
| 7897476 | Method of manufacturing SOI substrate To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to... | 03/01/2011 |
| 7825002 | Method of peeling thin film device and method of manufacturing semiconductor device using peeled thin film device There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for... | 11/02/2010 |
| 7736988 | Forming structures that include a relaxed or pseudo-relaxed layer on a substrate A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a mate... | 06/15/2010 |
| 7727855 | Fabrication of aligned nanowire lattices Methodologies associated with fabricating aligned nanowire lattices are described. One exemplary method embodiment includes providing a twist wafer bonded thin single crystal semiconductor film and a bulk single crystal substrate of the same material. Periodic non-u... | 06/01/2010 |
| 7727854 | Manufacturing method of semiconductor device An IC card is more expensive than a magnetic card, and an electronic tag is also more expensive as a substitute for bar codes. Therefore, the present invention provides an extremely thin integrated circuit that can be mass-produced at low cost unlike a chip of a con... | 06/01/2010 |
| 7696058 | Method for manufacturing SOI substrate An object is to reduce occurrence of defective bonding between a base substrate and a semiconductor substrate even when a silicon nitride film or the like is used as a bonding layer. Another object is to provide a method for manufacturing an SOI substrate by which a... | 04/13/2010 |
| 7638408 | Manufacturing method of substrate provided with semiconductor films A plurality of rectangular single crystal semiconductor substrates are prepared. Each of the single crystal semiconductor substrates is doped with hydrogen ions and a damaged region is formed at a desired depth, and a bonding layer is formed on a surface thereof. Th... | 12/29/2009 |
| 7588994 | Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strain The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. ... | 09/15/2009 |
| 7547609 | Method and structure for implanting bonded substrates for electrical conductivity A process for forming multi-layered substrates, e.g., silicon on silicon. The process includes providing a first substrate, which has a thickness of material to be removed. The thickness of material to be removed includes a first face region. The process includes jo... | 06/16/2009 |
| 7528050 | High performance field effect transistors on SOI substrate with stress-inducing material as buried insulator and methods The present invention provides a semiconductor structure that includes a high performance field effect transistor (FET) on a semiconductor-on-insulator (SOI) in which the insulator thereof is a stress-inducing material of a preselected geometry. Such a structure ach... | 05/05/2009 |
| 7528049 | Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped ... | 05/05/2009 |
| 7510945 | Element formation substrate, method of manufacturing the same, and semiconductor device A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the ... | 03/31/2009 |
| 7485541 | Creation of high mobility channels in thin-body SOI devices A method for fabricating a strained silicon film to a silicon on insulation (SOI) wafer. A layer of oxide is deposited onto a wafer that has a stack structure of a first base substrate, a layer of relaxed film=and a second layer of strained film. The SOI wafer has a... | 02/03/2009 |
| 7442622 | Silicon direct bonding method A silicon direct bonding (SDB) method by which void formation caused by gases is suppressed. The SDB method includes: preparing two silicon substrates having corresponding bonding surfaces; forming trenches having a predetermined depth in at least one bonding surfac... | 10/28/2008 |
| 7422957 | Semiconductor substrates having useful and transfer layers Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source... | 09/09/2008 |
| 7422956 | Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers A semiconductor device comprising a substrate having a first crystal orientation is provided. A first insulating layer overlies the substrate and a plurality of silicon layers overlie the first insulating layer. A first silicon layer comprises silicon having a secon... | 09/09/2008 |
| 7422958 | Method of fabricating a mixed substrate A method for fabricating a mixed substrate that include insulating material layer portions buried in a substrate of semiconductor material. The method includes providing a support substrate made of semiconductor material and having a front face that includes open ca... | 09/09/2008 |
| 7407863 | Adhesive bonding with low temperature grown amorphous or polycrystalline compound semiconductors Amorphous and polycrystalline III-V semiconductor including (Ga,As), (Al,As), (In,As), (Ga,N), and (Ga,P) materials were grown at low temperatures on semiconductor substrates. After growth, different substrates containing the low temperature grown material were pres... | 08/05/2008 |
| 7405466 | Method of fabricating microelectromechanical system structures A method of simultaneously bonding components, comprising the following steps. At least first, second and third components are provided and comprise: at least one glass component; and at least one conductive or semiconductive material component. The order of stackin... | 07/29/2008 |
| 7396734 | Substrate manufacturing method In a method of manufacturing a bonded substrate stack by bonding the bonding surfaces of the first and second substrates, a bonding surface having a hydrophobic region and a hydrophilic region is formed by partially processing at least one of the bonding surfaces of... | 07/08/2008 |
| 7396407 | Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substrates The present invention discloses the use of edge-angle-optimized solid phase epitaxy for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recry... | 07/08/2008 |
| 7381624 | Technique for forming a substrate having crystalline semiconductor regions of different characteristics located above a crystalline bulk substrate By direct bonding of two crystalline semiconductor layers of different crystallographic orientation and/or material composition and/or internal strain, bulk-like hybrid substrates may be formed, thereby providing the potential for forming semiconductor devices in ac... | 06/03/2008 |
| 7378330 | Cleaving process to fabricate multilayered substrates using low implantation doses A method of forming substrates, e.g., silicon on insulator, silicon on silicon. The method includes providing a donor substrate, e.g., silicon wafer. The method also includes forming a cleave layer on the donor substrate that contains the cleave plane, the plane of ... | 05/27/2008 |
| 7361574 | Single-crystal silicon-on-glass from film transfer A method is provided for transferring a single-crystal silicon (Si) film to a glass substrate. The method deposits a germanium (Ge)-containing material overlying a Si wafer, forming a sacrificial Ge-containing film. A single-crystal Si film is formed overlying the s... | 04/22/2008 |
| 7358586 | Silicon-on-insulator wafer having reentrant shape dielectric trenches A bonded SOI wafer and a method for forming a bonded SOI wafer are provided. According to the disclosed method, a first semiconductor wafer is provided, having a first dielectric layer disposed at an outer surface of the first wafer and a plurality of dielectric fil... | 04/15/2008 |
| 7358161 | Methods of forming transistor devices associated with semiconductor-on-insulator constructions The invention encompasses a method of forming a semiconductor on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is fo... | 04/15/2008 |
| 7358147 | Process for producing SOI wafer There is provided a process for producing an SOI wafer in which, when producing an SOI wafer using Smart Cut technology, the surface can be smoothed after cleaving, the thickness of the SOI layer can be reduced, and the film thickness of the SOI wafer can be made un... | 04/15/2008 |
| 7355226 | Power semiconductor and method of fabrication This invention is generally concerned with power semiconductors such as power MOS transistors, insulated gate by bipolar transistors (IGBTs), high voltage diodes and the like, and method for their fabrication. A power semiconductor, the semiconductor comprising a po... | 04/08/2008 |
