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| Number | Title | Issue Date |
| 7943408 | Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom ... | 05/17/2011 |
| 7923277 | Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom ... | 04/12/2011 |
| 7871842 | Production process for surface-mounting ceramic LED package, surface-mounting ceramic LED package produced by said production process, and mold for producing said package The present invention is related to a surface-mounting ceramic LED package and a method for its production comprising: layering a ceramic green sheet which has a hole and a second ceramic green sheet, inserting a mold with a groove to form a partition in the bottom ... | 01/18/2011 |
| 7867798 | Semiconductor laser, method of manufacturing semiconductor laser, optical pickup and optical disk system A semiconductor laser using a nitride type Group III-V compound semiconductor includes: an n-side clad layer; an n-side optical waveguide layer over the n-side clad layer; an active layer over the n-side optical waveguide layer; a p-side optical waveguide layer over... | 01/11/2011 |
| 7799591 | Semiconductor device and method for manufacturing the same A semiconductor device comprises a first contact plug, a first structure and a second insulating layer, or comprises a first contact plug, a first structure, a protruding region and a second insulating layer. The first contact plug extends in a predetermined directi... | 09/21/2010 |
| 7799590 | Semiconductor device and manufacturing method thereof The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a ga... | 09/21/2010 |
| 7745245 | Semiconductor light emitting device At least one recess and/or protruding portion is created on the surface portion of a substrate for scattering or diffracting light generated in a light emitting region. The recess and/or protruding portion has a shape that prevents crystal defects from occurring in ... | 06/29/2010 |
| 7718456 | Package for housing light-emitting element and method for manufacturing package for housing light-emitting element A package for housing a light-emitting element wherein a via hole for wiring provided so as to pass through an insulating substrate is arranged in such a manner that it is positioned under a reflector frame; a method for manufacturing the above package for housing a... | 05/18/2010 |
| 7691655 | Method of manufacturing semiconductor optical device Method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material; forming an insulating layer over the epitaxial structure, which prevent... | 04/06/2010 |
| 7598104 | Method of forming a metal contact and passivation of a semiconductor feature A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconducto... | 10/06/2009 |
| 7482189 | Light emitting diode and method of fabricating the same A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrus... | 01/27/2009 |
| 7479400 | Method of manufacturing semiconductor laser element by formation and removal of ridge part protrusion A method of manufacturing a semiconductor laser element having an enhanced yield ratio is provided. The semiconductor laser element having a cladding layer, an intermediate layer, and a capping layer is manufactured as follows. At the laminating step, a plurality of... | 01/20/2009 |
| 7425275 | Shadow mask and method of fabricating vertically tapered structure using the shadow mask A method of fabricating a vertically tapered structure. The method includes placing a spacer layer at a predetermined area on a wafer, placing a mask layer at a predetermined area on the spacer layer, and over-etching the spacer layer, by etching a certain area belo... | 09/16/2008 |
| 7422917 | Forming tapered lower electrode phase-change memories A phase-change memory may have a tapered lower electrode coated with an insulator. The coated, tapered electrode acts as a mask for a self-aligned trench etch to electrically separate adjacent wordlines. In some embodiments, the tapered lower electrode may be formed... | 09/09/2008 |
| 7399657 | Ball grid array packages with thermally conductive containers Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or at... | 07/15/2008 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semico... | 07/08/2008 |
| 7396476 | Method for reducing harmonic distortion in comb drive devices Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch... | 07/08/2008 |
| 7371595 | Method for manufacturing semiconductor laser device A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate ... | 05/13/2008 |
| 7361966 | Actuator chip for inkjet printhead with electrostatic discharge protection An inkjet printhead chip includes electrostatic discharge (ESD) circuits to protect the chip during ESD events, including one preventing a thin dielectric layer on a substrate from breakdown. In one embodiment, the chip includes an ESD circuit essentially dedicated ... | 04/22/2008 |
| 7342707 | Indicators and illuminators using a semiconductor radiation emitter package A vehicle lamp assembly includes a housing and an LED lamp carried in the housing. A signal mirror includes a mirror and an LED lamp. The LED lamp includes a heat extraction member. ... | 03/11/2008 |
| 7335920 | LED with current confinement structure and surface roughening An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-ty... | 02/26/2008 |
| 7329943 | Microelectronic devices and methods for forming interconnects in microelectronic devices Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backs... | 02/12/2008 |
| 7323722 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first cond... | 01/29/2008 |
| 7306963 | Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using... | 12/11/2007 |
| 7303933 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 12/04/2007 |
| 7304368 | Chalcogenide-based electrokinetic memory element and method of forming the same Memory elements including a first electrode and a second electrode. A chalcogenide material layer is between the first and second electrodes and a tin-chalcogenide layer is between the chalcogenide material layer and the second electrode. A selenide layer is between... | 12/04/2007 |
| 7300857 | Through-wafer interconnects for photoimager and memory wafers A through-wafer interconnect for imager, memory and other integrated circuit applications is disclosed, thereby eliminating the need for wire bonding, making devices incorporating such interconnects stackable and enabling wafer level packaging for imager devices. Fu... | 11/27/2007 |
| 7291864 | Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrate A single or multi-color light emitting diode (LED) with high extraction efficiency is comprised of a substrate, a buffer layer formed on the substrate, one or more patterned layers deposited on top of the buffer layer, and one or more active layers formed on or betw... | 11/06/2007 |
| 7288422 | Photonic integrated device using reverse-mesa structure and method for fabricating the same A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplif... | 10/30/2007 |
| 7288783 | Optical semiconductor device and method for fabricating the same Quantum dots are formed on a plurality of surfaces whose normal direction are different from each other. The quantum dots are formed on the surfaces normal to each other, whereby the polarization dependency can be eliminated as described above. Thus, the optical sem... | 10/30/2007 |
| 7268045 | N-channel LDMOS with buried P-type region to prevent parasitic bipolar effects An improved n-channel integrated lateral DMOS (10) in which a buried body region (30), beneath and self-aligned to the source (18) and normal body diffusions, provides a low impedance path for holes emitted at the drain region (16). This ... | 09/11/2007 |
| 7251264 | Distributed bragg reflector for optoelectronic device This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the... | 07/31/2007 |
| 7232754 | Microelectronic devices and methods for forming interconnects in microelectronic devices Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backs... | 06/19/2007 |
| 7229676 | Thermal imaging processes and products of electroactive organic material Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by thermal transfer, particularly l... | 06/12/2007 |
| 7214615 | Method of manufacturing semiconductor device, semiconductor device, circuit substrate and electronic apparatus A method of manufacturing a semiconductor device having electrodes penetrating a semiconductor substrate, the method includes the steps of forming a concave portion extending from an active surface of a semiconductor substrate on which an integrated circuit is forme... | 05/08/2007 |
| 7211831 | Light emitting device with patterned surfaces Light-emitting devices, and related components, systems and methods are disclosed. The light-emitting device can include a multi-layer stack of materials including a light-generating region and a first layer supported by the light-generating region. A surface of the... | 05/01/2007 |
| 7192884 | Method for manufacturing semiconductor laser device Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a first conductive-type semiconductor substrate; (b) forming a ... | 03/20/2007 |
| 7189646 | Method of enhancing the adhesion between photoresist layer and substrate and bumping process A method of enhancing the adhesion between photoresist material and a substrate that can be applied to fabricate bumps on the substrate is provided. The bump fabrication process uses at least photoresist materials each having a different viscosity. A photoresist mat... | 03/13/2007 |
| 7189623 | Semiconductor processing method and field effect transistor A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate oxide layer. In another method, a gate and a gate oxide layer are formed ... | 03/13/2007 |
| 7174620 | Method of manufacturing thin quartz crystal wafer A method of manufacturing a thin quartz crystal wafer from a quartz crystal block which is cut from a crystal body of synthetic quartz crystal and has a flat principal surface, comprises the steps of (a) converging a laser beam at a region in said quartz crystal blo... | 02/13/2007 |
