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| Number | Title | Issue Date |
| 8062950 | Method of manufacturing semiconductor device with lower capacitor electrode that includes islands of conductive oxide films arranged on a noble metal film A semiconductor device has a semiconductor substrate, and a capacitor which is provided on the upper side of the semiconductor substrate and composed of a lower electrode, an upper electrode and a dielectric film, the dielectric film being placed in between the lowe... | 11/22/2011 |
| 8003481 | Method for fabricating a capacitor A method for forming an HSG (hemispherical grain) layer on a storage electrode of a capacitor formed on a substrate is provided. The method includes a step of introducing a source gas into a reacting chamber to deposit a small amount of HSG nuclei on a conductive la... | 08/23/2011 |
| 7897475 | Semiconductor device having projection on lower electrode and method for forming the same A method of forming a semiconductor device, includes forming a lower electrode including a metal and a nitrogen on a semiconductor substrate, irradiating a reducing gas to a surface of the lower electrode, and irradiating a gas containing silicon to the surface of t... | 03/01/2011 |
| 7754576 | Method of forming inside rough and outside smooth HSG electrodes and capacitor structure A container capacitor and method of forming the container capacitor are provided. The container capacitor comprises a lower electrode fabricated by forming a layer of doped polysilicon within a container in an insulative layer disposed on a substrate; forming a barr... | 07/13/2010 |
| 7727850 | Method for forming capacitor of semiconductor device A method for forming a capacitor of a semiconductor device includes forming a first capacitor in a storage node contact region to form a two-stage structured capacitor, thereby increasing the height and the capacitance of the capacitor. ... | 06/01/2010 |
| 7700454 | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities A method of fabricating a uniformly wrinkled capacitor lower electrode without the need to perform a high-temperature heat treatment and a method of fabricating a capacitor including the uniformly wrinkled capacitor lower electrode are provided. A first conductive l... | 04/20/2010 |
| 7670921 | Structure and method for self aligned vertical plate capacitor A method of forming a metal-insulator-metal (MIM) capacitor includes forming a first planar dielectric layer with a first metallization layer therein; forming a first passivation layer on top thereof; forming a planar conductive layer above the first passivation lay... | 03/02/2010 |
| 7432152 | Methods of forming HSG layers and devices A polysilicon film is formed with enhanced selectivity by flowing chlorine during the formation of the film. The chlorine acts as an etchant to insulative areas adjacent polysilicon structures on which the film is desired to be formed. Bottom electrodes for capacito... | 10/07/2008 |
| 7427545 | Trench memory cells with buried isolation collars, and methods of fabricating same The present invention relates to semiconductor devices, preferably dynamic random access memory (DRAM) cells, each of which contains at least one trench capacitor with a buried isolation collar. The trench capacitor is located in a trench in a semiconductor substrat... | 09/23/2008 |
| 7416954 | Enhanced on-chip decoupling capacitors and method of making same An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method incl... | 08/26/2008 |
| 7407854 | Method for fabricating capacitor of semiconductor device The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a first amorphous silicon layer doped with an impurity in a predetermined first doping concentration suppressing dopants from l... | 08/05/2008 |
| 7407862 | Method for manufacturing ferroelectric memory device A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact hole in the interlayer dielectric film; forming, in the contact hole, a... | 08/05/2008 |
| 7400008 | Semiconductor device and manufacturing process therefor An objective of this invention is to provide a semiconductor device comprising a less bias-dependent capacitative element with a large capacity per a unit area, having a configuration which can be manufactured using an existing structure in a semiconductor device. T... | 07/15/2008 |
| 7393742 | Semiconductor device having a capacitor and a fabrication method thereof In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate and an insulating layer on the semiconductor substrate, a contact plug electrically connected to the semiconductor substra... | 07/01/2008 |
| 7387260 | MOS electronic article surveillance, RF and/or RF identification tag/device, and methods for making and using the same A RF MOS- or nonlinear device-based surveillance and/or identification tag, and methods for its manufacture and use. The tag generally includes (a) an inductor, (b) a first capacitor plate coupled to the inductor, (c) a dielectric film on the first capacitor plate, ... | 06/17/2008 |
| 7375003 | Methods of manufacturing a semiconductor device In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower elec... | 05/20/2008 |
| 7374954 | Ferroelectric register, and method for manufacturing capacitor of the same The present invention discloses a ferroelectric register and a method for manufacturing a capacitor of the same. The ferroelectric register is configured to reduce probability of data storage failure due to a weak state capacitor, by connecting a plurality of capaci... | 05/20/2008 |
| 7368401 | Integrated circuit having a doped porous dielectric and method of manufacturing the same In one aspect of the invention, a method for forming an integrated circuit having an at least substantially doped porous dielectric includes forming a semiconductor device. The semiconductor device includes at least a portion of a semiconductor substrate. The method... | 05/06/2008 |
| 7361578 | Method to form large grain size polysilicon films by nuclei-induced solid phase crystallization A method to enhance grain size in polysilicon films while avoiding formation of hemispherical grains (HSG) is disclosed. The method begins by depositing a first amorphous silicon film, then depositing silicon nuclei, which will act as nucleation sites, on the amorph... | 04/22/2008 |
| 7355231 | Memory circuitry with oxygen diffusion barrier layer received over a well base A method of forming memory circuitry having a memory array having a plurality of memory capacitors and having peripheral memory circuitry operatively configured to write to and read from the memory array, includes forming a dielectric well forming layer over a semic... | 04/08/2008 |
| 7355234 | Semiconductor device including a stacked capacitor A stacked capacitor formed in a capacitor hole includes a bottom electrode, capacitor insulation film and a top electrode. The bottom electrode includes a plurality of islands formed on an underlying insulating film, and a metallic film covering the islands on the u... | 04/08/2008 |
| 7338610 | Etching method for manufacturing semiconductor device A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove... | 03/04/2008 |
| 7332393 | Method of fabricating a cylindrical capacitor A cylindrical capacitor comprising at least a substrate, a cylindrical bottom electrode, a structure layer, a top electrode and a capacitor dielectric layer is provided. The substrate has several plugs. The cylindrical bottom electrodes are disposed on the substrate... | 02/19/2008 |
| 7332391 | Method for forming storage node contacts in semiconductor device A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a h... | 02/19/2008 |
| 7332370 | Method of manufacturing a phase change RAM device utilizing reduced phase change current To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed on the metal pads. Nano-sized copolymer patterns aligned with the me... | 02/19/2008 |
| 7326626 | Capacitor and method for manufacturing the same The capacitor of the present invention comprises: an opening part formed in an interlayer insulating film on a semiconductor substrate; a lower electrode made of a polycrystalline silicon with an uneven surface part; a chemical oxide film formed on the uneven surfac... | 02/05/2008 |
| 7326647 | Dry etching process to form a conductive layer within an opening without use of a mask during the formation of a semiconductor device A method for use in fabrication of a semiconductor device comprises forming a conformal conductive layer over a planarized surface of a dielectric layer, and within an opening formed in the dielectric layer. The opening will typically have an aspect ratio of about 4... | 02/05/2008 |
| 7320924 | Method of producing a chip-type solid electrolytic capacitor A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The capacitor elements are bonded to each other by a bonding agent such as a s... | 01/22/2008 |
| 7321148 | Capacitor constructions and rugged silicon-containing surfaces The invention encompasses a method of forming a rugged silicon-containing surface. A layer comprising amorphous silicon is provided within a reaction chamber at a first temperature. The temperature is increased to a second temperature at least 40° C. higher than th... | 01/22/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7314776 | Method to manufacture a phase change memory Briefly, in accordance with an embodiment of the invention, a method to manufacture a phase change memory is provided. The method may include forming a first electrode contacting the sidewall surface and the bottom surface of the phase change material. The method ma... | 01/01/2008 |
| 7314795 | Methods of forming electronic devices including electrodes with insulating spacers thereon An electronic device may include a substrate, a conductive layer on the substrate, and an insulating spacer. The conductive electrode may have an electrode wall extending away from the substrate. The insulating spacer may be provided on the electrode wall with porti... | 01/01/2008 |
| 7303928 | Process monitor and system for producing semiconductor A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an oper... | 12/04/2007 |
| 7303927 | Three-dimensional ferroelectric capacitor and method for manufacturing thereof as well as semiconductor memory device A ferroelectric capacitor is provided in which the surface area of a ferroelectric thin film is expanded to increase the amount of polarization. In the ferroelectric capacitor, hemi-spherical protruding parts 31 are formed with HSG-growth on the surface of a polycry... | 12/04/2007 |
| 7298000 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 11/20/2007 |
| 7288808 | Capacitor constructions with enhanced surface area A capacitor fabrication method may include forming a first capacitor electrode over a substrate, the first electrode having an inner surface area per unit area and an outer surface area per unit area that are both greater than an outer surface area per unit area of ... | 10/30/2007 |
| 7279772 | Edge intensive antifuse and method for making the same An antifuse including a bottom plate having a plurality of longitudinal members arranged substantially parallel to a first axis, a dielectric layer formed on the bottom plate, and a top plate having a plurality of longitudinal members arranged substantially parallel... | 10/09/2007 |
| 7276412 | MIM capacitor of semiconductor device and manufacturing method thereof In a capacitor of a semiconductor device, a bottom electrode is formed on a substrate and has an uneven top surface. An interlayer insulation layer is formed on the substrate and has a via hole exposing the top surface of the bottom electrode. A dielectric layer is ... | 10/02/2007 |
| 7274059 | Capacitor constructions The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is form... | 09/25/2007 |
| 7273778 | Method of electroplating a substance over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 09/25/2007 |
