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| Number | Title | Issue Date |
| 8048758 | Method for fabricating a capacitor utilizes the sacrificial pattern covering the cell region A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. A ... | 11/01/2011 |
| 8048757 | Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An... | 11/01/2011 |
| 8008162 | Select devices including an open volume, memory devices and systems including same, and methods for forming same Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select de... | 08/30/2011 |
| 7998825 | Method for fabricating semiconductor device A method for fabricating a semiconductor device includes: forming an etch stop pattern over a conductive layer, the etch stop pattern having a first opening exposing a top surface of the conductive layer; forming an insulation layer over the etch stop pattern; selec... | 08/16/2011 |
| 7951682 | Method for fabricating capacitor in semiconductor device A method for fabricating a capacitor in a semiconductor device includes forming an insulation layer over a substrate, forming a storage node contact plug passing through the insulation layer and coupled to the substrate, recessing the storage node contact plug to a ... | 05/31/2011 |
| 7919386 | Methods of forming pluralities of capacitors The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes ... | 04/05/2011 |
| 7910452 | Method for fabricating a cylinder-type capacitor utilizing a connected ring structure A method for fabricating a capacitor includes forming an isolation layer over a substrate. The isolation layer forms a plurality of open regions. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose up... | 03/22/2011 |
| 7875526 | Semiconductor device with contact stabilization between contact plugs and BIT lines and method for manufacturing the same A semiconductor device includes a semiconductor substrate divided into a cell array region, a core region, and a peripheral region. Bit lines are formed in the respective regions. Storage node contact plugs are formed in the cell array region, and blocking patterns ... | 01/25/2011 |
| 7846809 | Method for forming capacitor of semiconductor device A method for forming a capacitor of a semiconductor device includes the steps of forming first and second sacrificial insulation layers over a semiconductor substrate divided into first and second regions. The second and first sacrificial insulation layers in the fi... | 12/07/2010 |
| 7838385 | Method for manufacturing reservoir capacitor of semiconductor device A method for manufacturing a reservoir capacitor of a semiconductor device reduces the resistance of the reservoir capacitor to secure reliability of the semiconductor device. The method comprises: forming a dummy pattern having a lattice structure over a transistor... | 11/23/2010 |
| 7824998 | Method of forming a semiconductor capacitor using amorphous carbon A method includes forming an amorphous carbon layer over a first dielectric layer formed over a substrate, forming a second dielectric layer over the amorphous carbon layer; and forming an opening within the amorphous carbon layer and second dielectric layer by a fi... | 11/02/2010 |
| 7772082 | Capacitor of semiconductor device and method of fabricating the same A method of fabricating a semiconductor device includes forming a buffer insulating film over a semiconductor substrate including a conductive pattern. The buffer insulating film is etched using a storage node mask to form a buffer insulating pattern exposing the co... | 08/10/2010 |
| 7749856 | Method of fabricating storage node with supported structure of stacked capacitor A method of fabricating a storage node with a supported structure is provided. A dielectric stacked comprising an etch stop layer, a first dielectric layer, a support layer and a second dielectric layer is formed on a substrate. An opening is etched into the dielect... | 07/06/2010 |
| 7713832 | Semiconductor device and method of fabricating the same A method of fabricating a semiconductor device includes forming an interlayer insulating pattern over a semiconductor substrate. The interlayer insulating pattern defines a plurality of storage node regions. A lining conductive film is formed over the interlayer ins... | 05/11/2010 |
| 7588992 | Integrated thin-film capacitor with etch-stop layer, process of making same, and packages containing same A thin-film capacitor assembly includes a first metal bottom electrode, a dielectric layer, a second metal etch-stop layer, and a subsequent metal top electrode. The first metal bottom electrode is in contact with the dielectric layer. The second metal etch-stop lay... | 09/15/2009 |
| 7557015 | Methods of forming pluralities of capacitors The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes ... | 07/07/2009 |
| 7534694 | Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a firs... | 05/19/2009 |
| 7524732 | Semiconductor device with L-shaped spacer and method of manufacturing the same A semiconductor device with an L-shape spacer and the method for manufacturing the same are provided. The semiconductor device comprises a substrate, a composite spacer, and a tunnel insulating layer. The substrate comprises a shallow trench isolation structure and ... | 04/28/2009 |
| 7439152 | Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a firs... | 10/21/2008 |
| 7435644 | Method of manufacturing capacitor of semiconductor device Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold ox... | 10/14/2008 |
| 7416954 | Enhanced on-chip decoupling capacitors and method of making same An apparatus including a capacitor formed between metallization layers on a circuit, the capacitor including a bottom electrode coupled to a metal layer and a top electrode coupled to a metal via wherein the capacitor has a corrugated sidewall profile. A method incl... | 08/26/2008 |
| 7407862 | Method for manufacturing ferroelectric memory device A method for manufacturing a ferroelectric memory device includes the steps of forming an active element on a substrate; forming an interlayer dielectric film on the substrate; forming a contact hole in the interlayer dielectric film; forming, in the contact hole, a... | 08/05/2008 |
| 7405133 | Semiconductor device and method for manufacturing the same A semiconductor device comprising a semiconductor substrate, and a plurality of capacitors formed on the semiconductor substrate. The capacitors comprise a plurality of lower electrodes formed on the semiconductor substrate, a ferroelectric film formed continuously ... | 07/29/2008 |
| 7393743 | Methods of forming a plurality of capacitors The invention includes methods of forming a plurality of capacitors. In one implementation, a plurality of capacitor electrode openings is formed over a substrate. Individual of the capacitor electrode openings are bounded on a first pair of opposing sides by a firs... | 07/01/2008 |
| 7371636 | Method for fabricating storage node contact hole of semiconductor device A method for fabricating a storage node contact hole of a semiconductor device includes: forming an inter-layer insulation layer over a substrate; forming a hard mask over the inter-layer insulation layer; etching the inter-layer insulation layer to form a storage n... | 05/13/2008 |
| 7364967 | Methods of forming storage capacitors for semiconductor devices Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact... | 04/29/2008 |
| 7361548 | Methods of forming a capacitor using an atomic layer deposition process Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure inc... | 04/22/2008 |
| 7354523 | Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench... | 04/08/2008 |
| 7338610 | Etching method for manufacturing semiconductor device A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove... | 03/04/2008 |
| 7332389 | Selective polysilicon stud growth A memory cell having a bit line contact is provided. The memory cell may be a 6F2 memory cell. The bit line contact may have a contact hole bounded by insulating sidewalls, and the contact hole may be partially or completely filled with a doped polysilico... | 02/19/2008 |
| 7332391 | Method for forming storage node contacts in semiconductor device A method for forming storage node contacts in a semiconductor device includes forming an interlayer dielectric layer on a semiconductor substrate provided with transistors; forming a hydrogen diffusion preventing layer on the interlayer dielectric layer; forming a h... | 02/19/2008 |
| 7329574 | Methods of forming capacitor electrodes using fluorine and oxygen A method of forming a capacitor can include etching a metal-nitride layer in an environment comprising fluorine and oxygen to form a capacitor electrode. ... | 02/12/2008 |
| 7329939 | Metal-insulator-metal capacitor and method of fabricating same A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insultaing layer, a dielectric layer formed in the first opening, a conductive ... | 02/12/2008 |
| 7329576 | Double-sided container capacitors using a sacrificial layer Double-sided container capacitors are formed using sacrificial layers. A sacrificial layer is formed within a recess in a structural layer. A lower electrode is formed within the recess. The sacrificial layer is removed to create a space to allow access to the sides... | 02/12/2008 |
| 7329572 | Method of forming PIP capacitor A method of forming a polysilicon-insulator-polysilicon (PIP) capacitor includes the steps of forming a lower electrode of a first polysilicon layer over a semiconductor substrate, forming a dielectric layer over the lower electrode, forming a second polysilicon lay... | 02/12/2008 |
| 7320924 | Method of producing a chip-type solid electrolytic capacitor A chip-type solid electrolytic capacitor comprises capacitor elements. A cathode terminal comprising a plate-like conductor is interposed between cathode layers of the capacitor elements. The capacitor elements are bonded to each other by a bonding agent such as a s... | 01/22/2008 |
| 7320911 | Methods of forming pluralities of capacitors A method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes comprising sidewalls. The plurality of capacitor electrodes are supported at least in part with a retaining structure which engages the sidewalls, with the retaining... | 01/22/2008 |
| 7319254 | Semiconductor memory device having resistor and method of fabricating the same A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A stor... | 01/15/2008 |
| 7312131 | Method for forming multilayer electrode capacitor A method of forming a multilayer electrode capacitor is described. A trench is formed in a substrate or in an insulator layer. Two sets of conductive layers are deposited on the inner surface of the trench. The first set of conductive layers is electrically connecte... | 12/25/2007 |
| 7312130 | Methods of forming capacitor structures including L-shaped cavities Methods of forming capacitor structures may include forming an insulating layer on a substrate, forming a first capacitor electrode on the insulating layer, forming a capacitor dielectric layer on portions of the first capacitor electrode, and forming a second capac... | 12/25/2007 |
