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| Number | Title | Issue Date |
| 8163623 | Using a mesh to form a lower electrode in a capacitor A method of manufacturing a semiconductor device which previously form sidewalls between lower electrodes to prevent bunkers and leaning phenomena during a sacrificial layer dip out process, thereby improving characteristic of the device, is provided. The method inc... | 04/24/2012 |
| 8148231 | Method of fabricating capacitor A semiconductor device and a method of fabricating the same include an electrode having a nickel layer with impurities. The electrode having a nickel layer with impurities can be a gate electrode or a capacitor electrode. The electrode having a nickel layer with imp... | 04/03/2012 |
| 8143136 | Method for fabricating crown-shaped capacitor A method for fabricating a crown-shaped capacitor includes providing a first dielectric layer with a protective pillar formed thereover, including a first conductive layer, a protective layer, and a mask layer. A second conductive layer is formed over a sidewall of ... | 03/27/2012 |
| 8138057 | Metal oxide alloy layer, method of forming the metal oxide alloy layer, and methods of manufacturing a gate structure and a capacitor including the metal oxide alloy layer A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal oxide and having a second thickness, wherein a value of the first th... | 03/20/2012 |
| 8129251 | Metal-insulator-metal-structured capacitor formed with polysilicon A METAL-INSULATOR-METAL structured capacitor is formed with polysilicon instead of an oxide film as a sacrificial layer material that defines a storage electrode region. A MPS (Meta-stable Poly Silicon) process is performed to increase the surface area of the sacrif... | 03/06/2012 |
| 8124492 | Semiconductor device manufacturing method Provided is a semiconductor device manufacturing method for a capacitor having a dielectric film which can be formed into a thin film, can be formed at a low temperature, and has a readily controllable property. The manufacturing method includes: forming an oxide fi... | 02/28/2012 |
| 8124491 | Container capacitor structure and method of formation thereof Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (“bottom electrodes”) of the container capacitor structure. The etch provides a recess between proxi... | 02/28/2012 |
| 8124493 | Method of manufacturing a semiconductor device having an electrode exposed through a hole A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first insulating film is formed over a substrate. A second insulating film is formed on the first insulating film. An electrode penetrating the first and t... | 02/28/2012 |
| 8119492 | Dissolving precipates in alloy material in capacitor structure A method of fabricating a semiconductor device is provided. The method includes forming a bottom electrode material layer containing aluminum and cupper over the substrate. An insulating material layer and a top electrode material layer are sequentially formed on th... | 02/21/2012 |
| 8105914 | Method of fabricating organic memory device A method of fabricating an organic memory device is provided. In the method, a bottom electrode is formed on a substrate. A first surface treatment is performed on the bottom electrode to form a bottom surface treatment layer on a surface thereof. A polymer thin fil... | 01/31/2012 |
| 8101495 | MIM capacitors in semiconductor components Structures and methods of forming an ideal MIM capacitor are disclosed. The single capacitor includes a first and a second metal structure overlying a substrate, a first dielectric material disposed between a first portion of the first metal structure and a first po... | 01/24/2012 |
| 8088668 | Method for manufacturing capacitor lower electrodes of semiconductor memory A method for manufacturing capacitor lower electrodes of a semiconductor memory firstly forms a first stacked structure over a semiconductor substrate which has a plurality of conductive plugs. Then a second stacked structure is formed on the first stacked structure... | 01/03/2012 |
| 8076212 | Semiconductor device and method for manufacturing the same According to the method for manufacturing a semiconductor device, a surface of a lower insulating film (55) is planarized by CMP or the like, and an upper insulating film (56) and a protective metal film (59) are formed on the lower insulating f... | 12/13/2011 |
| 8053326 | Semiconductor device and method of fabricating the same A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plu... | 11/08/2011 |
| 8043926 | Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same A nonvolatile memory device includes at least one switching device and at least one storage node electrically connected to the at least one switching device. The at least one storage node includes a lower electrode, one or more oxygen-deficient metal oxide layers, o... | 10/25/2011 |
| 8039355 | Method for fabricating PIP capacitor A PIP capacitor and methods thereof. A method of fabricating a PIP capacitor may include forming a field oxide film over a silicon substrate to define a device isolating region and/or an active region. A method of fabricating a PIP capacitor may include forming a lo... | 10/18/2011 |
| 8030168 | Methods of forming DRAM memory cells The invention includes methods of electrically interconnecting different elevation conductive structures, methods of forming capacitors, methods of forming an interconnect between a substrate bit line contact and a bit line in DRAM, and methods of forming DRAM memor... | 10/04/2011 |
| 8026148 | Methods of utilizing silicon dioxide-containing masking structures Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are co... | 09/27/2011 |
| 8021954 | Integrated circuit system with hierarchical capacitor and method of manufacture thereof A method of manufacture of an integrated circuit system includes: providing a substrate including front-end-of-line circuitry; forming a first group of metal layers including a first finger and a second finger over the substrate utilizing a first design rule, the fi... | 09/20/2011 |
| 8008161 | Capacitor assemblies A method for fabricating a capacitor arrangement which includes at least three electrodes is described. The capacitor arrangement is fabricated using a number of lithography methods that is smaller than the number of electrodes. A capacitor arrangement extending ove... | 08/30/2011 |
| 8003480 | Process using oxide supporter for manufacturing a capacitor lower electrode of a micro stacked DRAM A process using oxide supporter for manufacturing a capacitor lower electrode of a micron stacked DRAM is disclosed. First, form a stacked structure. Second, form a photoresist layer on an upper oxide layer and then etch them. Third, deposit a polysilicon layer onto... | 08/23/2011 |
| 7968420 | Manufacturing semiconductor device and method of manufacturing electronic apparatus A method for manufacturing a semiconductor device, includes: forming an insulating film on a substrate; selectively removing the insulating film, so as to form a groove including a first groove area having a first depth and a second groove area having a second depth... | 06/28/2011 |
| 7964471 | Methods of forming capacitors A method of forming a capacitor includes providing material having an opening therein over a node location on a substrate. A shield is provided within and across the opening, with a void being received within the opening above the shield and a void being received wi... | 06/21/2011 |
| 7943475 | Process for manufacturing a semiconductor device comprising a metal-compound film There is provided a semiconductor device comprising a dielectric film made of a high dielectric constant material, in which a leak current is reduced in the film and which exhibits improved device reliability. Specifically, a dielectric film 142 is a metal-co... | 05/17/2011 |
| 7943476 | Stack capacitor in semiconductor device and method for fabricating the same including one electrode with greater surface area A stack capacitor in a semiconductor device includes a first capacitor formed on and/or over a semiconductor substrate and a second capacitor formed on and/or over the first capacitor. The first and second capacitors each have a multi-layer laminated structure which... | 05/17/2011 |
| 7943477 | Method of patterning noble metals for semiconductor devices by electropolishing An electropolishing process for high resolution patterning of noble metals, such as platinum, for forming various semiconductor devices, such as capacitors or wiring patterns is disclosed. ... | 05/17/2011 |
| 7923343 | Capacitor of semiconductor device and method for forming the same A method for forming a capacitor of a semiconductor device includes forming a cylindrical storage node over a semiconductor substrate; depositing a first dielectric layer over the cylindrical storage node; and etching the first dielectric layer to reduce a thickness... | 04/12/2011 |
| 7915136 | Methods of forming integrated circuit devices The invention includes methods of forming semiconductor constructions and methods of forming pluralities of capacitor devices. An exemplary method of the invention includes forming conductive material within openings in an insulative material to form capacitor elect... | 03/29/2011 |
| 7915135 | Method of making multi-layer structure for metal-insulator-metal capacitor The present invention discloses a method of making a multi-layer structure for metal-insulator-metal capacitors, in which, a bottom electrode plate layer is formed on a substrate, wherein a Ti/TiN layer serving as a top anti-reflection coating (top ARC) of the botto... | 03/29/2011 |
| 7897474 | Method of forming semiconductor device including capacitor and semiconductor device including capacitor A method of forming a semiconductor device may include, but is not limited to, the following processes. A second insulating film may be formed over a first insulating film. At least one through-hole may be formed, which penetrates the first and second insulating fil... | 03/01/2011 |
| 7892937 | Methods of forming capacitors Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are co... | 02/22/2011 |
| 7888230 | Method of making an integrated circuit including structuring a material A method of making an integrated circuit including structuring a material. The method includes providing an arrangement of three-dimensional bodies. The material is arranged between the bodies and structured directed radiation. The projection pattern of the three-di... | 02/15/2011 |
| 7888229 | Method for manufacturing an energy storage device The present invention relates to methods of manufacturing an electrochemical energy storage device, such as a hybrid capacitor. The method comprises saturating a porous electrically conductive material in a solution comprising an organic solvent and a metal complex ... | 02/15/2011 |
| 7888231 | Method for fabricating a three-dimensional capacitor A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is f... | 02/15/2011 |
| 7879681 | Methods of fabricating three-dimensional capacitor structures having planar metal-insulator-metal and vertical capacitors therein Methods of forming a three-dimensional capacitor network may include forming a first horizontal MIM capacitor on a semiconductor substrate and forming a first interlayer insulating layer on the first horizontal MIM capacitor. A first vertical capacitor electrode is ... | 02/01/2011 |
| 7875525 | Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer f... | 01/25/2011 |
| 7863149 | Method for fabricating a capacitor In a method for fabricating a capacitor that includes an electrode structure (80), an auxiliary layer (40) is formed over a substrate (10). A recess (60), which determines the shape of the electrode structure (80), is etched into t... | 01/04/2011 |
| 7858486 | Methods of forming a plurality of capacitors The invention includes methods and integrated circuitry. Pillars project outwardly from openings in a first material over individual capacitor storage node locations. Insulative material is deposited over the first material laterally about sidewalls of the projectin... | 12/28/2010 |
| 7846808 | Method for manufacturing a semiconductor capacitor A method for manufacturing a semiconductor device that reduces the overall number of masking processes while also preventing short-circuiting between electrodes. The method can include sequentially forming a first insulating film, a lower metal layer, a second insul... | 12/07/2010 |
| 7838384 | Structure for symmetrical capacitor Methods, articles and design structures for capacitance circuits are provided disposing a lower vertical-native capacitor metal layer above a planar front-end-of-line semiconductor base substrate, planar metal bottom plates spaced a bottom plate distance from the ba... | 11/23/2010 |
