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| Number | Title | Issue Date |
| 8124490 | Semiconductor device and method of forming passive devices A flip chip semiconductor device has a substrate with a plurality of active devices formed thereon. A passive device is formed on the substrate by depositing a first conductive layer over the substrate, depositing an insulating layer over the first conductive layer,... | 02/28/2012 |
| 8110477 | Semiconductor device and method of forming high-frequency circuit structure and method thereof A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the f... | 02/07/2012 |
| 8071458 | Method for forming an interfacial passivation layer on the Ge semiconductor The invention discloses a method for forming an interfacial passivation layer on the Ge semiconductor. The supercritical CO2 fluids is used to form an interfacial passivation layer between Ge channel and gate insulator layer, and improve the dielectric ch... | 12/06/2011 |
| 8058135 | Process for the production of electrolyte capacitors The invention relates to a process for the production of electrolyte capacitors having a low equivalent series resistance and low residual current, electrolyte capacitors produced by this process and the use of such electrolyte capacitors. ... | 11/15/2011 |
| 8039354 | Passive components in the back end of integrated circuits Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed... | 10/18/2011 |
| 8003479 | Low temperature deposition and ultra fast annealing of integrated circuit thin film capacitor Some embodiments of the invention include thin film capacitors formed on a package substrate of an integrated circuit package. At least one of the film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first an... | 08/23/2011 |
| 7981761 | Method of manufacturing semiconductor device having MIM capacitor In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films... | 07/19/2011 |
| 7964470 | Flexible processing method for metal-insulator-metal capacitor formation A method for forming a metal-insulator-metal (MIM) capacitor includes forming a capacitor bottom plate and a metal interconnect feature on a substrate. A dielectric layer having a predetermined thickness is then formed. The dielectric layer has a first portion overl... | 06/21/2011 |
| 7955945 | Weak-link capacitor A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene) polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and poly(p-pyridine vinylene) is energized said by exposure by ra... | 06/07/2011 |
| 7955944 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming a wiring layer in a first insulating layer, forming a second insulating layer over the first insulating layer, forming a first conductive layer over the second insulating layer, forming a dielectric l... | 06/07/2011 |
| 7902033 | Methods and devices for a high-k stacked capacitor An embodiment generally relates a method of forming capacitors. The method includes forming a plurality of holes within a protective overcoat or backend dielectric layer of an integrated circuit and depositing multiple layers of metal, each layer of metal electrical... | 03/08/2011 |
| 7838382 | Semiconductor device and method of manufacturing the semiconductor device A method of manufacturing a semiconductor device includes forming a lower electrode on a semiconductor substrate, applying a photoresist on the lower electrode, forming an opening in the photoresist spaced from the periphery of the lower electrode, forming a high-di... | 11/23/2010 |
| 7772081 | Semiconductor device and method of forming high-frequency circuit structure and method thereof A semiconductor device is made by providing an integrated passive device (IPD). Through-silicon vias (TSVs) are formed in the IPD. A capacitor is formed over a surface of the IPD by depositing a first metal layer over the IPD, depositing a resistive layer over the f... | 08/10/2010 |
| 7749855 | Capacitor structure used for flash memory A method of forming a capacitor for use as a charge pump with flash memory, comprising: (a) concurrently forming polysilicon gates on a semiconductor body in a core region and a polysilicon middle capacitor plate in a peripheral region, (b) forming a first dielectri... | 07/06/2010 |
| 7745300 | Method for forming a capacitor in a semiconductor and a capacitor using the same Disclosed is a capacitor and method for forming a capacitor in a semiconductor. The method includes the steps of: (a) forming a lower electrode pattern on a silicon semiconductor substrate; (b) etching a portion of the lower electrode pattern to a predetermined dept... | 06/29/2010 |
| 7736985 | Method for manufacturing semiconductor device using overlapping exposure and semiconductor device thereof The performance of a sensor in a semiconductor device can be improved. A plurality of oscillators forming an ultrasonic sensor are arranged on a main surface of a semiconductor chip. A negative-type photosensitive insulating film which protects the oscillators is de... | 06/15/2010 |
| 7732296 | Method of fabricating metal-insulator-metal capacitor and metal-insulator-metal capacitor manufactured by the method In a method of fabricating a metal-insulator-metal (MIM) capacitor and a metal-insulator-metal (MIM) capacitor fabricated according to the method, the method comprises: forming an insulating-layer pattern on a semiconductor substrate, the insulating-layer pattern ha... | 06/08/2010 |
| 7713831 | Method for fabricating capacitor in semiconductor device A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate... | 05/11/2010 |
| 7682924 | Methods of forming a plurality of capacitors A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capa... | 03/23/2010 |
| 7670919 | Integrated capacitors in package-level structures, processes of making same, and systems containing same An article includes a top electrode that is embedded in a solder mask. An article includes a top electrode that is on a core structure. A process of forming the top electrode includes reducing the solder mask thickness and forming the top electrode on the reduced-th... | 03/02/2010 |
| 7611958 | Method of making a semiconductor element A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode defining the recess, the element having a first surface exterior of ... | 11/03/2009 |
| 7566628 | Process for making a resistive memory cell with separately patterned electrodes Methods of making MIM structures and the resultant MIM structures are provided. The method involves forming a top electrode layer over a bottom electrode and an insulator on a substrate and forming a top electrode by removing portions of the top electrode layer. The... | 07/28/2009 |
| 7544580 | Method for manufacturing passive components A method for manufacturing passive components is disclosed. First, a substrate is provided, and a connecting region, a capacitor region and an inductance region are defined in the substrate. The substrate includes a first metal layer and an insulating layer on the f... | 06/09/2009 |
| 7538006 | Annular damascene vertical natural capacitor A method for forming a vertical natural capacitor in an integrated circuit is disclosed. In one embodiment, the method includes forming a first set of concentric conductive annular structures in a first metal layer of an integrated circuit. The first set includes a ... | 05/26/2009 |
| 7531418 | Method of producing a conductive layer including two metal nitrides In a method for producing a conductive layer a substrate is provided. On the substrate, a layer includes at least two different metal nitrides. In one embodiment, on a surface of the substrate a first metal nitride layer is deposited, followed by a second metal nitr... | 05/12/2009 |
| 7479439 | Semiconductor-insulator-silicide capacitor A semiconductor-insulator-silicide (SIS) capacitor is formed by depositing a thin silicon containing layer on a salicide mask dielectric layer, followed by lithographic patterning of the stack and metallization of the thin silicon containing layer and other exposed ... | 01/20/2009 |
| 7470596 | Capacitors having a horizontally folded dielectric layer and methods for manufacturing the same Capacitors having a horizontally folded dielectric layer and methods of manufacturing is the same are provided. An example method for manufacturing a capacitor includes forming a first insulating layer pattern above a substrate, forming a first silicon epitaxial gro... | 12/30/2008 |
| 7446013 | Method of measuring pattern shift in semiconductor device Disclosed is a method of measuring a pattern shift in a semiconductor device. The method measures a mobility or shift distance of a stepped portion occurring between a buried layer surface and a substrate surface during an epitaxial process on the buried layer. The ... | 11/04/2008 |
| 7439154 | Method of fabricating interconnect structure A method for fabricating an interconnect structure is described. A substrate with a conductive part thereon is provided, a first porous low-k layer is formed on the substrate, and then a first UV-curing step is conducted. A damascene structure is formed in the first... | 10/21/2008 |
| 7432170 | Semiconductor device and fabrication method thereof On a silicon substrate, a first insulation layer, a lower conductive layer, a capacitor-insulator layer, and an upper conductive layer are formed in that order. Then, a first resist pattern is formed, the upper conductive layer is etched to form an upper electrode, ... | 10/07/2008 |
| 7427550 | Methods of fabricating passive element without planarizing Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarizati... | 09/23/2008 |
| 7419873 | Method and apparatus for providing flexible partially etched capacitor electrode interconnect The present subject matter includes a capacitor stack disposed in a case, the capacitor stack including one or more substantially planar electrode layers. The one or more substantially planar electrode layers have an etched surface, an unetched surface, and a grade ... | 09/02/2008 |
| 7417274 | Semiconductor device including direct contact between capacitor electrode and contact plug and method of manufacturing the same A semiconductor device comprises an insulation film that is provided on a semiconductor substrate, a first contact plug that is provided in the insulation film and includes a metal, a first adhesive film that is provided on the insulation film, has a higher oxygen a... | 08/26/2008 |
| 7411270 | Composite capacitor and method for forming the same An electronic assembly (98) includes a substrate (20), a capacitor having first and second conductors (38,54) formed over the substrate, a first set of conductive members (76) formed over the substrate and being electrically connected to ... | 08/12/2008 |
| 7410510 | Process of producing activated carbon for electrode of electric double layer capacitor A process for producing an activated carbon for an electrode of an electric double-layer capacitor, includes a step of subjecting a carbonized material to an alkali activating treatment, wherein the carbonized material has an average true specific gravity of 1.450 t... | 08/12/2008 |
| 7408232 | Semiconductor device and method for fabricating the same A semiconductor device of the present invention includes a plurality of lower electrodes covering the entire surfaces of a plurality of trenches formed in a first interlayer insulating film, a capacitive insulating film covering the entire surfaces of the plurality ... | 08/05/2008 |
| 7404829 | Electrode-separator combination for improved assembly of layered electrolytic capacitors This disclosure provides methods for assembling multiple anode stacked capacitor configurations with a temporary adhesive to aide in the alignment of separator materials and electrodes without sacrificing energy density, and electrolytic capacitors comprising such c... | 07/29/2008 |
| 7405132 | Method of making a thin film transistor device In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected w... | 07/29/2008 |
| 7402183 | High capacitance cathode foil produced by abrasion process using titanium nitride powder A dry titanium nitride (TiN) powder abrasion method roughens the surface of a valve metal foil for use as a cathode in an electrolytic capacitor. This increases the surface area of the foil, thereby increasing the double-layer capacitance of the cathode, and also me... | 07/22/2008 |
| 7402890 | Method for symmetric capacitor formation A structure and associated method for forming a structure. The structure comprises a first doped region, a second doped region, a third doped region, and a first shallow trench isolation structure formed within a substrate. The first doped region comprises a first d... | 07/22/2008 |
