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| Number | Title | Issue Date |
| 7449354 | Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has... | 11/11/2008 |
| 7445949 | Method of manufacturing semiconductor laser device structure A method of manufacturing a semiconductor laser device is provided. First, a first mask layer is formed on an epitaxial structure to define a protrudent area in a ridge structure. Thereafter, a conformal second mask layer is formed over the epitaxial structure to co... | 11/04/2008 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7411220 | Semiconductor light emitting device and manufacturing method thereof A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can inc... | 08/12/2008 |
| 7399657 | Ball grid array packages with thermally conductive containers Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or at... | 07/15/2008 |
| 7396476 | Method for reducing harmonic distortion in comb drive devices Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch... | 07/08/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7371595 | Method for manufacturing semiconductor laser device A method for manufacturing a semiconductor laser device is provided in which deformation of a cap layer and a third cladding layer is inhibited and a protruding portion of an intermediate layer is removed. By coating outer peripheral portions facing an intermediate ... | 05/13/2008 |
| 7365371 | Packages for semiconductor light emitting devices utilizing dispensed encapsulants A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant regio... | 04/29/2008 |
| 7358537 | Light emitting diode and fabrication method thereof A light emitting diode (LED). The LED comprises a LED chip comprising an n-type semiconductor layer, a active layer and a p-type semiconductor layer. An n-type ohmic contact electrode and a p-type ohmic contact electrode electrically contact the n-type semiconductor... | 04/15/2008 |
| 7355212 | Light emitting element An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with ... | 04/08/2008 |
| 7344904 | Method of fabricating laser diode Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; f... | 03/18/2008 |
| 7341175 | Bonding of light emitting diodes having shaped substrates Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do... | 03/11/2008 |
| 7338827 | Nitride semiconductor laser and method for fabricating the same A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respe... | 03/04/2008 |
| 7335916 | Electrode structure, and semiconductor light-emitting device having the same A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a... | 02/26/2008 |
| 7335519 | Method for manufacturing a light-emitting diode A method for manufacturing a light-emitting diode (LED) is disclosed. In the method, a substrate is firstly provided, in which a first conductivity type cladding layer, an active layer, a second conductivity type cladding layer, a superlattice contact layer and a tr... | 02/26/2008 |
| 7329569 | Methods of forming semiconductor devices including mesa structures and multiple passivation layers A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A f... | 02/12/2008 |
| 7326583 | Methods for packaging of a semiconductor light emitting device Methods of packaging a semiconductor light emitting device in a reflector having a moat positioned between a lower and an upper sidewall thereof, the upper and lower sidewall defining a reflective cavity, include dispensing encapsulant material into the reflective c... | 02/05/2008 |
| 7319076 | Low resistance T-shaped ridge structure A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge secti... | 01/15/2008 |
| 7314771 | Organic light emitting element, display apparatus having the same and method of manufacturing the same A method of manufacturing a display apparatus includes: forming a peripheral circuit, a first electrode and a bank on a substrate; forming a surface energy lowering pattern on the bank; forming an organic light emitting member on the first electrode; and forming a s... | 01/01/2008 |
| 7309875 | Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ... | 12/18/2007 |
| 7309879 | Semiconductor laser, manufacturing the same and semiconductor laser device A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substra... | 12/18/2007 |
| 7303933 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 12/04/2007 |
| 7300808 | Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump rad... | 11/27/2007 |
| 7298136 | Magnetically coupled electrical test lead An electrical test lead includes an insulated electrical cable having a proximal end and a distal end, an electrical connector disposed at the proximal end of the cable and connected to a test instrument, and an electrically conductive magnetic probe disposed at the... | 11/20/2007 |
| 7294519 | Semiconductor light-emitting device and method of manufacturing the same Provided are a semiconductor light-emitting device having nano-needles and a method of manufacturing the same. The provided semiconductor light-emitting device improves the extraction efficiency of photons, and includes a gallium nitride (GaN) group multi-layer and ... | 11/13/2007 |
| 7291529 | Methods of processing semiconductor wafer backsides having light emitting devices (LEDs) thereon Processing a semiconductor wafer can include forming a plurality of Light Emitting Devices (LED) on a semiconductor wafer having a first thickness. The plurality of LEDs on the wafer are brought into contact with a surface of a carrier to couple the wafer to the car... | 11/06/2007 |
| 7287318 | Biosensor A biosensor is provided that comprises a plate element with a pre-determined reaction zone and a recess positioned adjacent to the reaction zone. The biosensor also comprises a reagent that is positioned on the reaction zone. In preferred embodiments, the recess cir... | 10/30/2007 |
| 7288422 | Photonic integrated device using reverse-mesa structure and method for fabricating the same A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplif... | 10/30/2007 |
| 7288446 | Single and double-gate pseudo-FET devices for semiconductor materials evaluation Several methods and structures are disclosed for determining electrical properties of silicon-on-insulator (SOI) wafers and alternate versions of such wafers such as strained silicon:silicon/germanium:-on-insulator (SSGOI) wafers. The analyzed electrical properties ... | 10/30/2007 |
| 7282455 | Method of producing a diffraction grating In an embodiment, a method of producing a diffraction grating comprises steps of: forming, on a man surface of a first member, a first mask having a plurality of resist patterns arranged at a Bragg diffraction period; etching the first member by use of the first mas... | 10/16/2007 |
| 7279346 | Method for packaging a light emitting device by one dispense then cure step followed by another Methods of packaging a semiconductor light emitting device positioned in a reflective cavity are provided. A first quantity of encapsulant material is dispensed into the reflective cavity including the light emitting device therein and the first quantity of encapsul... | 10/09/2007 |
| 7279347 | Method for manufacturing a light-emitting structure of a light-emitting device (LED) A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so... | 10/09/2007 |
| 7279349 | Semiconductor optical device and manufacturing method thereof In a dry etching step for an organic material film, a fluorine-containing member is disposed to the periphery of a semiconductor substrate disposed on a lower electrode or a tray for wafer transportation to form fluorine (fluoro-radicals) from the member per se in a... | 10/09/2007 |
| 7276724 | Series interconnected optoelectronic device module assembly Series interconnection of optoelectronic device modules is disclosed. Each device module includes an active layer disposed between a bottom electrode and a transparent conducting layer. An insulating layer is disposed between the bottom electrode of a first device m... | 10/02/2007 |
| 7271019 | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator laye... | 09/18/2007 |
| 7265389 | Light emitting diode and fabricating method thereof A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a tra... | 09/04/2007 |
| 7259402 | High efficiency group III nitride-silicon carbide light emitting diode A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conduct... | 08/21/2007 |
| 7255978 | Multi-level optical structure and method of manufacture A multi-level optical device includes a substrate having a baseline level. At least one feature is disposed at a level above the baseline level. At least one feature is disposed at a level below the baseline level, or in the feature above the baseline level is locat... | 08/14/2007 |
| 7250319 | Method of fabricating quantum features A method of fabricating quantum features on a substrate from a layer of material selected from materials identified in the III-V periodic groups (e.g., silicon (Si), InP, Si—Ge, and the like) uses sequentially two patterned masks, each mask includes an ... | 07/31/2007 |