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| Number | Title | Issue Date |
| 7601603 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench.... | 10/13/2009 |
| 7439135 | Self-aligned body contact for a semiconductor-on-insulator trench device and method of fabricating same A structure and method of forming a body contact for an semiconductor-on-insulator trench device. The method including: forming set of mandrels on a top surface of a substrate, each mandrel of the set of mandrels arranged on a different corner of a polygon and exten... | 10/21/2008 |
| 7410864 | Trench and a trench capacitor and method for forming the same A method for fabricating a trench includes providing a semiconductor substrate made of a semiconductor material. A trench is etched into a surface of the semiconductor substrate such that a trench wall is produced. At least one layer is provided on the trench wall. ... | 08/12/2008 |
| 7402487 | Process for fabricating a semiconductor device having deep trench structures A process for fabricating a semiconductor device having deep trench structures includes forming a first portion of the trench in a semiconductor substrate and a second portion of the trench in a selectively-formed upper layer. After etching the substrate to form the... | 07/22/2008 |
| 7390717 | Trench power MOSFET fabrication using inside/outside spacers A fabrication process for a trench type power semiconductor device includes forming inside spacers over a semiconductor surface. Using the spacers as masks, trenches with gates are formed in the semiconductor body. After removing the spacers, source implants are for... | 06/24/2008 |
| 7344953 | Process for vertically patterning substrates in semiconductor process technology by means of inconformal deposition On a substrate surface, which has been patterned in the form of a relief, of a substrate, typically of a semiconductor wafer, a deposition process is used to provide a covering layer on process surfaces which are vertical or inclined with respect to the substrate su... | 03/18/2008 |
| 7320912 | Trench capacitors with buried isolation layer formed by an oxidation process and methods for manufacturing the same A method for forming a trench capacitor includes: removing a portion of the substrate to form a trench within the substrate; forming at a buried isolation layer within the substrate; forming in the substrate a first electrode of the trench capacitor at least in area... | 01/22/2008 |
| 7248495 | Semiconductor memory device Conductive lines constituting word lines of memory cells and conductive lines constituting memory cell plate electrodes are formed in the same interconnecting layer in a memory device including a plurality of memory cells each including a capacitor for storing data ... | 07/24/2007 |
| 7244977 | Longitudinal MISFET manufacturing method, longitudinal MISFET, semiconductor storage device manufacturing method, and semiconductor storage device A semiconductor memory device includes a vertical MISFET having a source region, a channel forming region, a drain region, and a gate electrode formed on a sidewall of the channel forming region via a gate insulating film. In manufacturing the semiconductor memory d... | 07/17/2007 |
| 7223651 | Dram memory cell with a trench capacitor and method for production thereof A memory cell includes a selection transistor and a trench capacitor. The trench capacitor is filled with a conductive trench filling on which an insulating covering layer is arranged. The insulating covering layer is laterally overgrown, proceeding from the substra... | 05/29/2007 |
| 7205193 | Semiconductor device and method for fabricating the same A semiconductor device and method for fabricating the same. The semiconductor device including a first conductive type semiconductor substrate having an active region and a field region defined thereon, and a trench formed in the field region. The semiconductor devi... | 04/17/2007 |
| 7157328 | Selective etching to increase trench surface area The surface area of the walls of a trench formed in a substrate is increased. A barrier layer is formed on the walls of the trench such that the barrier layer is thinner near the corners of the trench and is thicker between the corners of the trench. A dopant is int... | 01/02/2007 |
| 7122439 | Method of fabricating a bottle trench and a bottle trench capacitor A method of fabricating a bottle trench and a bottle trench capacitor. The method including: providing a substrate; forming a trench in the substrate, the trench having sidewalls and a bottom, the trench having an upper region adjacent to a top surface of the substr... | 10/17/2006 |
| 7112461 | Fabrication process for integrated circuit having photodiode device An integrated circuit is provided that includes a substrate incorporating a semiconductor photodiode device having a p-n junction. The photodiode device includes at least one capacitive trench buried in the substrate and connected in parallel with the junction. In a... | 09/26/2006 |
| 7101768 | Self-aligned selective hemispherical grain deposition process and structure for enhanced capacitance trench capacitor As disclosed herein, a method is provided, in an integrated circuit, for forming an enhanced capacitance trench capacitor. The method includes forming a trench in a semiconductor substrate and forming an isolation collar on a sidewall of the trench. The collar has a... | 09/05/2006 |
| 7096548 | Manufacturing method of integrated capacitor Disclosed is a manufacturing method of an integrated capacitor including: forming a hole in a semiconductor substrate; depositing a dielectric film on an inner face of the formed hole; heat-treating the deposited dielectric film; depositing a silicon film on the die... | 08/29/2006 |
| 7094659 | Method of forming deep trench capacitors A method of forming a trench capacitor is disclosed. After completion of the bottom electrode of the capacitor, a collar dielectric layer is directly formed on the sidewall of the deep trench using self-starved atomic layer chemical vapor deposition (self-starved AL... | 08/22/2006 |
| 7067372 | Method for fabricating a memory cell having a trench A memory cell has a trench, in which a trench capacitor is disposed. Furthermore a vertical transistor is formed in the trench above the trench capacitor. A barrier layer is disposed for the electric connection of the conductive trench filling to a lower doping regi... | 06/27/2006 |
| 7042040 | Semiconductor device and method for manufacturing the same A semiconductor memory device comprises select transistors formed on side surfaces of plural silicon columns defined by a grid-like trenches on a surface of a silicon substrate, each select transistor having a source and a drain on the top surface and the bottom of ... | 05/09/2006 |
| 7026248 | Method for manufacturing semiconductor device with semiconductor region inserted into trench In a method for manufacturing a semiconductor device of the present invention, a portion of a first epitaxial layer formed in a trench in a silicon substrate is removed by vapor phase etching using a halogenated compound or hydrogen. In this removing process, the po... | 04/11/2006 |
| 6989311 | Method for fabricating a trench contact to a deep trench capacitor having a polysilicon filling The instant invention is a method for fabricating a trench contact to a deep trench capacitor with a polysilicon filling in a trench hole formed in a silicon substrate. An epitaxy process is performed to selectively grow silicon above the polysilicon filling in the ... | 01/24/2006 |
| 6989561 | Trench capacitor structure Afin-type trench capacitor structure includes a buried plate diffused into a silicon substrate. The buried plate, which surrounds a bottle-shaped lower portion of the trench capacitor structure, is electrically connected to an upwardly extending annular poly electro... | 01/24/2006 |
| 6955962 | Deep trench capacitor having increased surface area A method of fabricating a trench capacitor of a memory cell, includes providing a semiconductor substrate with a surface covered by a pad layer, forming a trench in the substrate, forming a first layer on the pad layer and on the surface of the trench, removing a po... | 10/18/2005 |
| 6953725 | Method for fabricating memory device having a deep trench capacitor A method of fabricating a memory device having a deep trench capacitor is described. A first conductive layer is formed in the lower and middle portions of a deep trench in a substrate. An undoped semiconductor layer is formed in the upper portion of the deep trench... | 10/11/2005 |
| 6919255 | Semiconductor trench structure A method for fabricating a semiconductor trench structure includes forming a trench in a semiconductor substrate and filling it with a filler. A first thermal process having a first maximum temperature cures the filler. Removing the filler from an upper region of th... | 07/19/2005 |
| 6900519 | Diffused extrinsic base and method for fabrication The present invention provides a unique device structure and method that provides increased transistor performance in integrated bipolar circuit devices. The preferred embodiment of the present invention provides improved high speed performance by providing reduced ... | 05/31/2005 |
| 6887768 | Method and structure for composite trench fill A method and structure for a composite trench fill for silicon electronic devices. On a planar silicon substrate having a first deposited layer of oxide and a second deposited layer of polysilicon, a trench is etched. Deposition and etch processes using a combinatio... | 05/03/2005 |
| 6878594 | Semiconductor device having an insulation film with reduced water content A semiconductor device having a self-aligned contact hole is formed by providing a side wall oxide film on a gate electrode, covering the gate electrode and the side wall oxide film by an oxide film and further covering the oxide film by a nitride film, wherein the ... | 04/12/2005 |
| 6828192 | Semiconductor memory cell and method for fabricating the memory cell A trench capacitor is formed in a trench, which is disposed in a substrate. The trench is filled with a conductive trench filling which functions as an inner capacitor electrode. An epitaxial layer is grown on the sidewall of the trench on the substrate. A buried st... | 12/07/2004 |
| 6825094 | Method for increasing capacitance of deep trench capacitors A method for increasing the capacitance of deep trench capacitors. The method includes providing a substrate, forming a pad structure on the substrate, forming a photoresist defining the region of the deep trench on the pad structure, forming a deep trench in the su... | 11/30/2004 |
| 6821837 | Stack-film trench capacitor and method for manufacturing the same A trench capacitor includes an electrode having a first conductive area formed in a trench provided in a substrate, and a second conductive area extending from a bottom of the trench, the second conductive area being electrically coupled to the first conductive area... | 11/23/2004 |
| 6809005 | Method to fill deep trench structures with void-free polysilicon or silicon The present invention provides methods of producing trench structures having substantially void-free filler material therein. The fillers may be grown from a liner material such as polysilicon formed along the sidewalls of the trench. Previously formed voids may be ... | 10/26/2004 |
| 6790697 | Optical semiconductor device and method of fabricating the same An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and es... | 09/14/2004 |
| 6784017 | Method of creating a high performance organic semiconductor device A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky conta... | 08/31/2004 |
| 6727157 | Method for forming a shallow trench isolation using air gap In fabricating a shallow trench isolation (STI), a silicon oxide layer, a silicon nitride layer and a moat pattern is sequentially deposited on a silicon substrate. Next, the silicon nitride layer and the silicon oxide layer is etched using the moat pattern as a mas... | 04/27/2004 |
| 6713361 | Method of manufacturing a bipolar junction transistor including undercutting regions adjacent to the emitter region to enlarge the emitter region According to one embodiment of the invention, a method for manufacturing bipolar junction transistors includes disposing a first oxide layer between a semiconductor substrate and a base polysilicon layer, forming a dielectric layer outwardly from the base polysilico... | 03/30/2004 |
| 6677197 | High aspect ratio PBL SiN barrier formation In a process for preparing a DT DRAM for sub 100 nm groundrules that normally require the formation of a collar after the bottle formation, the improvement of providing a collar first scheme by forming a high aspect ration PBL SiN barrier, comprising: ... | 01/13/2004 |
| 6653161 | Method and apparatus for forming a capacitive structure including single crystal silicon A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal si... | 11/25/2003 |
| 6583464 | Memory cell using amorphous material to stabilize the boundary face between polycrystalline semiconductor material of a capacitor and monocrystalline semiconductor material of a transistor A memory cell array has memory cells in which there is an electrical connection between a polycrystalline semiconductor material of a capacitor electrode and a monocrystalline semiconductor region. Islands made of an amorphous material are disposed in a v... | 06/24/2003 |
| 6576525 | Damascene capacitor having a recessed plate A damascene capacitor structure includes a recessed capacitor plate for preventing leakage and dielectric breakdown between the capacitor plates of the capacitor structure on the surface of the trenches and in the bottom corners of the trenches.... | 06/10/2003 |
