Class 438/386 - Trench capacitor

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a capacitor located in a groove in a
No. of patents: 928
Last issue date: 05/01/2012

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Number	Title	Issue Date
8168507	Structure and method of forming enhanced array device isolation for implanted plate EDRAM A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrat...	05/01/2012
8158485	Integrated circuit device having openings in a layered structure An integrated circuit device includes a substrate with a first layer situated on the substrate. The first layer defines a first opening with a cover layer deposited on the first layer and coating a sidewall portion of the first opening. A second layer is situated on...	04/17/2012
8143135	Embedded series deep trench capacitors and methods of manufacture Trench capacitors and methods of manufacturing the trench capacitors are provided. The trench capacitors are very dense series capacitor structures with independent electrode contacts. In the method, a series of capacitors are formed by forming a plurality of insula...	03/27/2012
8110476	Memory cell that includes a carbon-based memory element and methods of forming the same In accordance with aspects of the invention, a method of forming a memory cell is provided, the method including forming a steering element above a substrate, and forming a memory element coupled to the steering element, wherein the memory element comprises a carbon...	02/07/2012
8110475	Method for forming a memory device with C-shaped deep trench capacitors The invention is related to a memory device, including a substrate, a capacitor which is substantially C-shaped in a cross section parallel to the substrate surface and a word line coupling the capacitor. In an embodiment, the C-shaped capacitor is a deep trench cap...	02/07/2012
8105913	Method of fabricating a capacitor of a semiconductor device Disclosed herein is a method of fabricating a capacitor of a semiconductor device that includes sequentially forming an interlayer insulating film defining a contact plug, a lower electrode oxide film, and a hard mask film over a semiconductor substrate; etching the...	01/31/2012
8101494	Structure, design structure and method of manufacturing a structure having VIAS and high density capacitors A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a ca...	01/24/2012
8088667	Method of fabricating vertical capacitors in through-substrate vias A fabrication method which forms vertical capacitors in a substrate. The method is preferably an all-dry process, comprising forming a through-substrate via hole in the substrate, depositing a first conductive material layer into the via hole using atomic layer depo...	01/03/2012
8043925	Method of forming capacitor of semiconductor memory device A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold laye...	10/25/2011
8026147	Method of fabricating a semiconductor microstructure Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of a Group III-element; forming a mold material layer on the lower mate...	09/27/2011
8017491	Method for fabricating capacitor A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial ...	09/13/2011
8008159	Semiconductor device and semiconductor device manufacturing method A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the...	08/30/2011
7960241	Manufacturing method for double-side capacitor of stack DRAM A manufacturing method for double-side capacitor of stack DRAM has steps of: forming a sacrificial structure in the isolating trench and the capacitor trenches; forming a first covering layer and a second covering layer on the sacrificial structure; modifying a part...	06/14/2011
7943473	Minimum cost method for forming high density passive capacitors for replacement of discrete board capacitors using a minimum cost 3D wafer-to-wafer modular integration scheme Passive, high density, 3d IC capacitor stacks and methods that provide the integration of capacitors and integrated circuits in a wafer to wafer bonding process that provides for the integration of capacitors formed on one wafer, alone or with active devices, with o...	05/17/2011
7943474	EDRAM including metal plates A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a conformal dielectric layer is formed on the lower electrode. An ...	05/17/2011
7919384	Method of making planar-type bottom electrode for semiconductor device A method of making planar-type bottom electrode for semiconductor device is disclosed. A sacrificial layer structure is formed on a substrate. Multiple first trenches are defined in the sacrificial layer structure, wherein those first trenches are arranged in a firs...	04/05/2011
7910451	Simultaneous buried strap and buried contact via formation for SOI deep trench capacitor A node dielectric, an inner electrode, and a buried strap cavity are formed in the deep trench in an SOI substrate. A buried layer contact cavity is formed by lithographic methods. The buried strap cavity and the buried layer contact cavity are filled simultaneously...	03/22/2011
7906404	Power distribution for CMOS circuits using in-substrate decoupling capacitors and back side metal layers A semiconductor device and method for fabricating the same is provided. The semiconductor device includes a substrate, at least one capacitor, an active circuit and a power plane. The substrate has a first cavity formed through a first surface to a first depth and a...	03/15/2011
7897473	Method of manufacturing a dual contact trench capacitor A method of manufacturing a dual contact trench capacitor is provided. The method includes forming a first plate provided within a trench and isolated from a wafer body by a first insulator layer formed in the trench. The method further includes forming a second pla...	03/01/2011
7879679	Electronic component manufacturing method A method for manufacturing an electronic component on a semiconductor substrate, including forming at least one opening in the substrate; forming in the bottom and on the walls of the opening and on the substrate an alternated succession of layers of a first materia...	02/01/2011
7879680	Method of fabricating semiconductor device Photoresist on a metal is removed with less oxidation of the metal surface by the invented ashing. During process, the matching of oxygen gas ratio and wafer temperature under downstream plasma which means no RF bias plasma is controlled for oxidation amount not to ...	02/01/2011
7871891	Method of manufacturing semiconductor devices including capacitor support pads A semiconductor device may include a semiconductor substrate and a plurality of first capacitor electrodes arranged in a plurality of parallel lines on the semiconductor substrate with each of the first capacitor electrodes extending away from the semiconductor subs...	01/18/2011
7871892	Method for fabricating buried capacitor structure A method for fabricating a buried capacitor structure includes: laminating a first dielectric layer having a capacitor embedded therein with a second dielectric layer to bury the capacitor therebetween; forming a first circuit pattern on a first metal layer of the f...	01/18/2011
7851324	Method of forming metal-insulator-metal structure A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode. ...	12/14/2010
7838381	Stud capacitor device and fabrication method The present teachings relate to a method of forming a container capacitor structure on a substrate. In one embodiment, the method comprises etching a recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the substrate and the...	11/23/2010
7833872	Uniform recess of a material in a trench independent of incoming topography Columnar elements which extend to varying heights above a major surface of a substrate, e.g., polysilicon studs within trenches in the substrate, are recessed to a uniform depth below the major surface. The columnar elements are etched selectively with respect to a ...	11/16/2010
7781296	Integrated circuit comprising a capacitor with metal electrodes and process for fabricating such a capacitor An integrated circuit (IC) includes at least one capacitor with metal electrodes. At least one of the electrodes (10 or 30) is formed from at least surface-silicided hemispherical grain silicon or silicon alloy. A fabrication process for obtaining such...	08/24/2010
7776706	Forming SOI trench memory with single-sided buried strap A method of forming a trench memory cell includes forming a trench capacitor within a substrate material, the trench capacitor including a node dielectric layer formed within a trench and a conductive capacitor electrode material formed within the trench in contact ...	08/17/2010
7767537	Simplified method of fabricating isolated and merged trench capacitors Trench capacitors having small and large sizes can be formed simultaneously using a combined lithography process in which openings in a photomask have the same dimensions and spacings. Larger capacitors are formed when the openings in the photomask are aligned with ...	08/03/2010
7741188	Deep trench (DT) metal-insulator-metal (MIM) capacitor A deep trench metal-insulator-metal (MIM) capacitor in an SOI-type substrate. In the deep trench, a layer of TiN, followed by a layer of high-k dielectric, followed by a second layer of TiN. The resulting capacitor is completely buried below the SOI layer, thereby a...	06/22/2010
7723201	Structure and method for making on-chip capacitors with various capacitances A method for manufacturing a device includes forming trenches of different morphologies into a substrate. At the upper surfaces, the trenches have different orientations with respect to each other. In an aspect, windows for the trenches are aligned along the a...	05/25/2010
7682923	Method of forming metal trench pattern in thin-film device A method of forming a metal trench pattern in a thin-film device includes a step of depositing an electrode film on a substrate or on a base layer, a step of forming a resist pattern layer having a trench forming portion used to make a trench pattern, on the deposit...	03/23/2010
7682922	Post STI trench capacitor A capacitor having a suitably large value for decoupling applications is formed in a trench defined by isolation structures such as recessed isolation or shallow trench isolation. The capacitor provides a contact area coextensive with an active area and can be relia...	03/23/2010
7629221	Method for forming capacitor of semiconductor device Disclosed is a method for forming a capacitor of a semiconductor device. In such a method, a mold insulating layer is formed on an insulating interlayer provided with a storage node plug, and the mold insulating layer is etched to form a hole through which the stora...	12/08/2009
7592233	Method for forming a memory device with a recessed gate A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor is formed in each trench. A protrusion is f...	09/22/2009
7563686	Method for forming a memory device with a recessed gate A method for forming a memory device with a recessed gate is disclosed. A substrate with a pad layer thereon is provided. The pad layer and the substrate are patterned to form at least two trenches. A deep trench capacitor device is formed in each trench. The pad la...	07/21/2009
7560356	Fabrication method of trench capacitor A method of fabricating trench capacitors is provided. A plurality of trenches is formed in the substrate by performing a patterning process with a patterned mask layer on a substrate. A bottom electrode is formed in the substrate of the surface of the trench. A por...	07/14/2009
7553736	Increasing dielectric constant in local regions for the formation of capacitors A method for increasing capacitances of capacitors and the resulting integrated structure are provided. The method includes providing a substrate, forming a low-k dielectric layer over the substrate wherein the low-k dielectric layer includes a capacitor region and ...	06/30/2009
7553737	Method for fabricating recessed-gate MOS transistor device A method of fabricating gate trench utilizing pad pullback technology is disclosed. A semiconductor substrate having thereon a pad oxide layer and pad layer is provided. Trench capacitors are formed in a memory array region of the semiconductor substrate. Each of th...	06/30/2009
7547607	Methods of fabricating integrated circuit capacitors using a dry etching process A method of fabricating an integrated circuit capacitor includes forming a first metal layer on a conductive plug in an interlayer insulating layer on a substrate. At least a portion of the first metal layer is silicided to form a metal silicide layer and a remainin...	06/16/2009

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Class 438/386 - Trench capacitor