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| Number | Title | Issue Date |
| 8148230 | Method of making damascene diodes using selective etching methods A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first conductivity type semiconductor layer in the plurality of openings, forming a second conductivity type semiconductor layer over the f... | 04/03/2012 |
| 7981760 | Method for manufacturing nonvolatile storage element and method for manufacturing nonvolatile storage device A method for manufacturing a nonvolatile storage element that minimizes shape shift between an upper electrode and a lower electrode, and which includes: depositing, in sequence, a connecting electrode layer which is conductive, a lower electrode layer and a variabl... | 07/19/2011 |
| 7892936 | Self aligned integration of high density phase change memory with thin film access device Embodiments of the present invention provide a method that includes depositing a first electrode film on one or more wordline structures, depositing a phase change material (PCM) film on the first electrode film, depositing a second electrode film on the PCM film, d... | 02/22/2011 |
| 7883983 | Semiconductor device and method of manufacturing the same A method of manufacturing a semiconductor device, includes: forming a gate insulating film on a semiconductor substrate; forming a first metal film on the gate insulating film; forming a second metal film on the first metal film; and patterning a stacked film of the... | 02/08/2011 |
| 7871890 | Methods of fabricating semiconductor devices having resistors A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second circuit region. A lower interlayer insulating layer is provided over th... | 01/18/2011 |
| 7846807 | Method for forming memristor material and electrode structure with memristance Ion Implantation is used to form the memristor material and electrode structure with memristance. First, numerous electron-rich element atoms are implanted into a layer made of transition metal or non-metal. Then, a treating process (such as annealing) is proceeded ... | 12/07/2010 |
| 7842580 | Structure and method for buried inductors for ultra-high resistivity wafers for SOI/RF SiGe applications A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a high resistivity substrate and a buried inductor formed directly in the high resistivity substrate and devoid of an insulat... | 11/30/2010 |
| 7795104 | Method for fabricating device structures having a variation in electrical conductivity A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The radiation absorbing layer has a spatial variation and radiation absorbing cha... | 09/14/2010 |
| 7785979 | Integrated circuits comprising resistors having different sheet resistances and methods of fabricating the same The fabrication of integrated circuits comprising resistors having the same structure but different sheet resistances is disclosed herein. In one embodiment, a method of fabricating an integrated circuit comprises: concurrently forming a first resistor laterally spa... | 08/31/2010 |
| 7723200 | Electrically tunable resistor and related methods An electrically tunable resistor and related methods are disclosed. In one embodiment, the resistor includes a first resistive layer, at least one second resistive layer, and an intermediate interdiffused layer of the first resistive layer and the at least one secon... | 05/25/2010 |
| 7713830 | Method of forming poly pattern in R-string of LCD drive IC and structure of the same A method of forming a poly pattern for minimizing a change in a storage value in the R-string pattern of the LCD panel drive IC (LDI) that includes depositing a poly silicon layer used as a resistor in a R-string structure over a semiconductor substrate; and then fo... | 05/11/2010 |
| 7659176 | Tunable temperature coefficient of resistance resistors and method of fabricating same Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the sa... | 02/09/2010 |
| 7648884 | Semiconductor device with integrated resistive element and method of making A resistive device (44) and a transistor (42) are formed. Each uses a portion of a metal layer (18) that is formed at the same time and thus additional process steps are avoided to remove the metal from the resistive device. The metal used in th... | 01/19/2010 |
| 7642170 | Phase change memory cell with roundless micro-trenches A method for constructing a phase change memory device includes forming a first dielectric layer on a substrate; forming a first conductive component in the first dielectric layer; forming a second dielectric layer over the first conductive component in the first di... | 01/05/2010 |
| 7615459 | Manufacturing method for variable resistive element A manufacturing method for a variable resistive element according to which a stable switching operation can be achieved with excellent reproducibility is provided. A conductive thin film is deposited on a semiconductor substrate and patterned to a predetermined form... | 11/10/2009 |
| 7569459 | Nonvolatile programmable resistor memory cell A nonvolatile programmable resistance memory cell comprising a high-mobility ion conductor and a method for fabricating the same are provides. The memory cell comprises of a first and second electrode and a reversible and persistent programmable resistance structure... | 08/04/2009 |
| 7514334 | Thin film plate phase change RAM circuit and manufacturing method A memory device comprising a access circuits, an electrode layer over the access circuits, an array of phase change memory bridges over the electrode layer, and a plurality of bit lines over the array of phase change memory bridges. The electrode layer includes elec... | 04/07/2009 |
| 7498231 | Multiple data state memory cell A programmable multiple data state memory cell including a first electrode layer formed from a first conductive material, a second electrode layer formed from a second conductive material, and a first layer of a metal-doped chalcogenide material disposed between the... | 03/03/2009 |
| 7473612 | Method for fabricating a variable-resistance element including heating a RMCoOperovskite structure in an oxygen atmosphere A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second electrodes, the method including: (1) a first electrode production step; (2) a... | 01/06/2009 |
| 7456076 | Techniques for forming passive devices during semiconductor back-end processing Fabrication of electronic devices in the “metal layers” of semiconductor devices. Each metal layer includes a dielectric layer that supports a conductive layer, which includes electrically conductive pathways and electronic devices. The metal layers are stacked ... | 11/25/2008 |
| 7439147 | Resistor of semiconductor device and method for fabricating the same A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer... | 10/21/2008 |
| 7427551 | High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected i... | 09/23/2008 |
| 7419881 | Phase changeable memory device and method of formation thereof In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern... | 09/02/2008 |
| 7393701 | Method of adjusting buried resistor resistance Methods of adjusting a resistance of a buried resistor in a semiconductor are disclosed. In one aspect, the method includes using a silicidation blocking mask to define the buried resistor in the semiconductor; adjusting a size of the silicidation blocking mask to a... | 07/01/2008 |
| 7387938 | Methods of forming phase change storage cells for memory devices Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist pha... | 06/17/2008 |
| 7375001 | Semiconductor device and method therefore Where the silicon active layer of an SOI substrate is used as a resistor, it is difficult to form small wells densely in a semiconductor support substrate portion under the resistor because of the presence of a buried insulation film. It is also difficult to control... | 05/20/2008 |
| 7369431 | Method for initializing resistance-variable material, memory device containing a resistance-variable material, and method for initializing nonvolatile memory circuit including variable resistor An initialization method of the present invention is a method for initializing a material (variable-resistance material) (2) whose resistance value increases/decreases according to the polarity of an applied electric pulse. An electric pulse having a first po... | 05/06/2008 |
| 7351639 | Increasing an electrical resistance of a resistor by oxidation or nitridization A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen/nitrogen (i.e., oxygen or nitrogen) particles, respectively. ... | 04/01/2008 |
| 7326979 | Resistive memory device with a treated interface A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments on both electrode/multi-resistive state element interfaces improves th... | 02/05/2008 |
| 7314786 | Metal resistor, resistor material and method A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N2), car... | 01/01/2008 |
| 7305754 | Method of manufacturing chip resistor In manufacturing a chip resistor by dividing a chip resistance substrate which includes an insulator, resistance film formed on a surface of the insulator, and a plurality of conductive strips disposed on the resistance film at fixed intervals, grooves are formed by... | 12/11/2007 |
| 7285472 | Low tolerance polysilicon resistor for low temperature silicide processing Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS) processing utilizing low temperature silicidation are provided. In some emb... | 10/23/2007 |
| 7254059 | Multilevel phase-change memory element and operating method A multilevel phase change memory element and operating method and electrodes, which are configured in a parallel structure to form a memory cell. A voltage-drive mode is employed to control and drive the memory element such that multilevel memory states may be achie... | 08/07/2007 |
| 7253074 | Temperature-compensated resistor and fabrication method therefor A method for forming a temperature-compensated resistor on a semiconductor substrate is provided. A resistor element is formed on the semiconductor substrate. Terminal contacts are formed on the ends of the resistor element. A temperature-compensating configuration ... | 08/07/2007 |
| 7241663 | Maskless multiple sheet polysilicon resistor The present invention facilitates semiconductor fabrication of semiconductor devices having polysilicon resistors. An oxide layer is formed over a semiconductor device (104). A polysilicon layer is formed on the oxide layer (106). The polysilicon layer... | 07/10/2007 |
| 7233515 | Integrated memory arrangement based on resistive memory cells and production method An integrated memory arrangement based on resistive memory cells that can be changed over between a first state of high electrical resistance and a second state of low electrical resistance, each memory cell having an electrical additional capacitance that increases... | 06/19/2007 |
| 7227767 | Cross point memory array with fast access time Cross point array with fast access time. A cross point array is driven by drivers on a semiconductor substrate. The drivers for either a single-layer cross point array or for the bottom layer of a stacked cross point array can be positioned to improve access time. S... | 06/05/2007 |
| 7223668 | Method of etching metallic thin film on thin film resistor An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and ope... | 05/29/2007 |
| 7217613 | Low cost fabrication of high resistivity resistors In one disclosed embodiment a layer is formed over a transistor gate and a field oxide region. For example, a polycrystalline silicon layer can be deposited over a PFET gate oxide and a silicon dioxide isolation region on the same chip. The layer is then doped over ... | 05/15/2007 |
| 7215236 | Electric component, method for the production thereof and use of the same An electrical component having a base body includes a layer stack of mutually overlapping, electrically conductive electrode layers that are separated from one another by electrically conductive ceramic layers. The electrically conductive ceramic layers are composed... | 05/08/2007 |
