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| Number | Title | Issue Date |
| 8080461 | Method of making a thin film resistor A method of making a thin film resistor includes: forming a doped region in a semiconductor substrate; forming a dielectric layer over the substrate; forming a thin film resistor over the dielectric layer; forming a contact hole in the dielectric layer before anneal... | 12/20/2011 |
| 8021953 | Method for making PMC type memory cells A microelectronic device includes: at least one cell or element including at least one first electrode, at least one second electrode, and at least one stack of thin layers between the first electrode and the second electrode. The stack includes at least one doped c... | 09/20/2011 |
| 8012844 | Method of manufacturing an integrated circuit A method of manufacturing an integrated circuit comprises depositing a electrically resistive layer of a material for serving as a thin film resistor (TFR), depositing an electrically insulating layer on the resistor layer, removing the electrically insulating layer... | 09/06/2011 |
| 7981759 | Local oxidation of silicon planarization for polysilicon layers under thin film structures In accordance with the teachings described herein, a method for fabricating a patterned polysilicon layer having a planar surface may include the steps of: depositing a polysilicon film above a substrate material; depositing an oxide-resistant mask over the polysili... | 07/19/2011 |
| 7977201 | Methods for forming back-end-of-line resistive semiconductor structures In one embodiment, a second metal line embedded in a second dielectric layer overlies a first metal line embedded in a first dielectric layer. A portion of the second dielectric layer overlying the first metal line is recessed employing a photoresist and the second ... | 07/12/2011 |
| 7964469 | Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon film In a method of manufacturing a semiconductor device, a first oxide film is formed in a convex shape on a field insulating film, a polycrystalline silicon film is formed on the first oxide film, and impurities are introduced into the polycrystalline silicon film. The... | 06/21/2011 |
| 7858484 | Semiconductor device and method for producing the same A semiconductor device includes a substrate, an insulating film disposed on the substrate, a resistor groove disposed in the insulating film, and a resistor disposed in the resistor groove. The resistor is separated from all side surfaces of the resistor groove by a... | 12/28/2010 |
| 7855121 | Method of forming organic thin film and method of manufacturing semiconductor device using the same Provided are a method of forming an organic semiconductor thin film and a method of manufacturing a semiconductor device using the. According to example embodiments, a method of forming an organic semiconductor thin film at least may include exposing a lower substra... | 12/21/2010 |
| 7829428 | Method for eliminating a mask layer during thin film resistor manufacturing A method is disclosed for eliminating a mask layer during the manufacture of thin film resistor circuits. The method of the present invention enables the simultaneous etching of both deep vias and shallow vias using one mask layer instead of two mask layers. A high ... | 11/09/2010 |
| 7803687 | Method for forming a thin film resistor A method for forming a thin film resistor includes providing a substrate having a transistor region and a thin film resistor region defined thereon, sequentially forming a dielectric layer, a metal layer and a first hard mask layer on the substrate, patterning the f... | 09/28/2010 |
| 7759212 | System-in-package having integrated passive devices and method therefor A method of manufacturing a semiconductor device involves providing a substrate, forming a first passivation layer over the substrate, and forming an integrated passive circuit over the substrate. The integrated passive circuit can include inductors, capacitors, and... | 07/20/2010 |
| 7704848 | Method for designing semiconductor device and semiconductor device A method for designing a semiconductor device includes: based on information on layout of a resistive element and information on layout of wiring disposed on a layer above the resistive element when seen in section, determining whether or not the resistive element a... | 04/27/2010 |
| 7541253 | Method of forming an integrated resistor In a semiconductor device, a thin film resistor is formed by making use of an interconnect structure and etching back the layers over the glue layer of the interconnect structure and using the glue layer as a thin film resistor. ... | 06/02/2009 |
| 7465639 | Method for fabricating an SOI device A method is provided for fabricating a silicon on insulator (SOI) device that includes a silicon substrate, a buried insulator layer overlying the silicon substrate, and a monocrystalline silicon layer overlying the buried insulator layer. The method comprises the s... | 12/16/2008 |
| 7442603 | Self-aligned structure and method for confining a melting point in a resistor random access memory A process in the manufacturing of a resistor random access memory with a confined melting area for switching a phase change in the programmable resistive memory. The process initially formed a pillar comprising a substrate body, a first conductive material overlying... | 10/28/2008 |
| 7439146 | Field plated resistor with enhanced routing area thereover An integrated circuit includes a field plated resistor having enhanced area thereover for routing metal conductors, formed in the same layer of metal as forms contacts to the resistor, is fabricated by a sequence of processing steps. A resistor having a resistor bod... | 10/21/2008 |
| 7439147 | Resistor of semiconductor device and method for fabricating the same A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer... | 10/21/2008 |
| 7427550 | Methods of fabricating passive element without planarizing Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarizati... | 09/23/2008 |
| 7419881 | Phase changeable memory device and method of formation thereof In a phase changeable memory device and a method of formation thereof, the phase changeable memory device comprises: a lower electrode pattern on an interlayer insulating layer; an insulating pattern located on the lower electrode pattern; a phase changeable pattern... | 09/02/2008 |
| 7416951 | Thin film resistors integrated at two different metal interconnect levels of single die An integrated circuit includes a first thin film resistor on a first dielectric layer. A first layer of interconnect conductors on the first dielectric layer includes a first and second interconnect conductors electrically contacting the first thin film resistor. A ... | 08/26/2008 |
| 7410879 | System and method for providing a dual via architecture for thin film resistors A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. First and second portions of a first dielectric ... | 08/12/2008 |
| 7394145 | Methods of fabricating passive element without planarizing and related semiconductor device Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarizati... | 07/01/2008 |
| 7384855 | Resistor integration structure and technique for noise elimination A method of preventing contact noise in a SiCr thin film resistor includes performing in situ depositions of a SiCr layer and then a TiW layer on a substrate without breaking a vacuum between the depositions, to prevent formation of any discontinuous oxide between t... | 06/10/2008 |
| 7375001 | Semiconductor device and method therefore Where the silicon active layer of an SOI substrate is used as a resistor, it is difficult to form small wells densely in a semiconductor support substrate portion under the resistor because of the presence of a buried insulation film. It is also difficult to control... | 05/20/2008 |
| 7358135 | Method of forming resistor of flash memory device A method of forming a resistor of a flash memory device includes etching an isolation structure provided on a semiconductor substrate to form a first trench. A polysilicon structure is formed within the first trench of the isolation structure. A dielectric layer is ... | 04/15/2008 |
| 7351639 | Increasing an electrical resistance of a resistor by oxidation or nitridization A method and structure for increasing an electrical resistance of a resistor that is within a semiconductor structure, by oxidizing or nitridizing a fraction of a surface layer of the resistor with oxygen/nitrogen (i.e., oxygen or nitrogen) particles, respectively. ... | 04/01/2008 |
| 7348653 | Resistive memory cell, method for forming the same and resistive memory array using the same A resistive memory cell employs a photoimageable switchable material, which is patternable by actinic irradiation and is reversibly switchable between distinguishable resistance states, as a memory element. Thus, the photoimageable switchable material is directly pa... | 03/25/2008 |
| 7345573 | Integration of thin film resistors having different TCRs into single die An integrated circuit structure including multiple thin film resistors having different sheet resistances and TCRs includes a first oxide layer (2) formed on a semiconductor substrate (1), a first thin film resistor (3) disposed on the first oxi... | 03/18/2008 |
| 7341958 | Integrated process for thin film resistors with silicides The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a ... | 03/11/2008 |
| 7338852 | Method of forming a semiconductor device having a capacitor and a resistor A method of simultaneously forming at least: one capacitor two resistors and one metal-oxide semiconductor. A first doped polysilicon layer/patterned interpoly oxide film/second doped polysilicon layer is formed over an exposed oxide structure. The patterned interpo... | 03/04/2008 |
| 7332403 | System and method for providing a buried thin film resistor having end caps defined by a dielectric mask A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. A layer of dielectric material is formed over th... | 02/19/2008 |
| 7329939 | Metal-insulator-metal capacitor and method of fabricating same A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insultaing layer, a dielectric layer formed in the first opening, a conductive ... | 02/12/2008 |
| 7326624 | Method of making thin-film chip resistor A method of making a thin-film chip resistor includes: a step of making a material plate A formed with lengthwise breaking grooves A1 and crosswise breaking grooves A2 along which the plate is to be divided into individual chip substrates 1 each... | 02/05/2008 |
| 7326589 | Method for producing a TFA image sensor and one such TFA image sensor The invention relates to a method for producing a TFA image sensor in which a multi-layer arrangement comprising a photo diode matrix is arranged on an ASIC switching circuit provided with electronic circuits for operating the TFA image sensor, such as pixel electro... | 02/05/2008 |
| 7326632 | Method for fabricating metal wirings of semiconductor device A method for fabricating metal wirings of a semiconductor including forming an etch stop layer on a semiconductor substrate, and forming an inter metal dielectric on the etch stop layer. The method also includes forming a via hole in the inter metal dielectric so as... | 02/05/2008 |
| 7323751 | Thin film resistor integration in a dual damascene structure A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on the first dielectric layer and a second dielectric layer formed over t... | 01/29/2008 |
| 7323762 | Semiconductor package substrate with embedded resistors and method for fabricating the same A semiconductor package substrate with embedded resistors and a method for fabricating the same are proposed. Firstly, an inner circuit board having a first circuit layer thereon is provided, and a plurality of resistor electrodes are formed in the fist circuit laye... | 01/29/2008 |
| 7314786 | Metal resistor, resistor material and method A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N2), car... | 01/01/2008 |
| 7310282 | Distributed programmed memory cell overwrite protection A method and circuit for preventing the overprogramming of a memory cell. A fuse circuit is operable to be blown. A combinational logic circuit receives a signal from the fuse circuit, indicating whether or not the fuse has been blown, and controls the programming o... | 12/18/2007 |
| 7306552 | Semiconductor device having load resistor and method of fabricating the same A semiconductor device includes a semiconductor substrate having a resistor region, an isolation layer disposed in the resistor region, the isolation layer defining active regions, first conductive layer patterns disposed on the active regions, a second conductive l... | 12/11/2007 |
