Class 438/382 - Resistor

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process involving the manufacture of an electrically resistive
No. of patents: 404
Last issue date: 05/29/2012

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Number	Title	Issue Date
8187946	Manufacturing a phase change memory device having a ring heater A ring shaped heater surrounds a chalcogenide region along the length of a cylindrical solid phase portion thereof defining a change phase memory element. The chalcogenide region is formed in a sub-lithographic pore, so that a relatively compact structure is achieve...	05/29/2012
8187945	Method for obtaining smooth, continuous silver film A method for forming a semiconductor device including a resistive memory cell includes providing a substrate having an upper surface. A first conductive layer is formed over the upper surface of the substrate. An amorphous silicon layer is formed over the first cond...	05/29/2012
8153498	Downsize polysilicon height for polysilicon resistor integration of replacement gate process A semiconductor device and method for fabricating a semiconductor device protecting a resistive structure in gate replacement processing is disclosed. The method comprises providing a semiconductor substrate; forming at least one gate structure including a dummy gat...	04/10/2012
8138056	Thermally insulated phase change material memory cells with pillar structure A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer alon...	03/20/2012
8133793	Carbon nano-film reversible resistance-switchable elements and methods of forming the same Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the di...	03/13/2012
8133792	Method for reducing capacitance variation between capacitors A structure of a capacitor set is described, including at least two capacitors that are disposed at the same position on a substrate and include a first capacitor and a second capacitor. The first capacitor includes multiple first capacitor units electrically connec...	03/13/2012
8129250	Resistor with improved switchable resistance and non-volatile memory device A resistor with improved switchable resistance and a non-volatile memory device includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includ...	03/06/2012
8114752	Structure of capacitor set A structure of a capacitor set is described, including at least two capacitors that are disposed at the same position on a substrate and include a first capacitor and a second capacitor. The first capacitor includes multiple first capacitor units electrically connec...	02/14/2012
8071457	Low capacitance precision resistor A precision low capacitance resistor is formed, e.g., in a bulk substrate. An embodiment includes forming a source/drain region on a substrate, patterning a portion of the source/drain region to form segments, etching the segments to substantially separate an upper ...	12/06/2011
7964468	Multi-level memory cell having phase change element and asymmetrical thermal boundary A multi-level, phase change memory cell has first and second thermal isolation materials having different thermal conductivity properties situated in heat-conducting relation to first and second boundaries of the phase change material. Accordingly, when an electrica...	06/21/2011
7960240	System and method for providing a dual via architecture for thin film resistors A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the thin film resistor. First and second portions of a first dielectric ...	06/14/2011
7955943	High voltage sensor device and method therefor In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor. ...	06/07/2011
7923342	Nonvolatile memory element and production method thereof and storage memory arrangement A nonvolatile memory element and associated production methods and memory element arrangements are presented. The nonvolatile memory element has a changeover material and a first and second electrically conductive electrode present at the changeover material. To red...	04/12/2011
7910450	Method of fabricating a precision buried resistor The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with t...	03/22/2011
7883982	Monitor pattern of semiconductor device and method of manufacturing semiconductor device A plurality of diffused resistors and a plurality of wirings (resistive elements) are alternately disposed along a virtual line, and those diffused resistors and wirings are connected in series by contact vias. In the same wiring layer as that of the wirings, a dumm...	02/08/2011
7855120	Methods for forming resistors including multiple layers for integrated circuit devices Methods of forming an integrated circuit device may include forming an insulating layer on an integrated circuit substrate, forming a first conductive layer on the insulating layer, and forming a second conductive layer on the first conductive layer so that the firs...	12/21/2010
7851323	Phase change material with filament electrode The present invention, in one embodiment, provides a memory device that includes a phase change memory cell; a first electrode; and a layer of filamentary resistor material positioned between the phase change memory cell and the first electrode, wherein at least one...	12/14/2010
7785978	Method of forming memory cell using gas cluster ion beams A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface of the first electrode, formi...	08/31/2010
7718502	Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes vertically penetrating there-through to expose part of the wiring pattern at ...	05/18/2010
7704847	On-chip heater and methods for fabrication thereof and use thereof An on-chip heater and methods for fabrication thereof and use thereof provide that the heater is located within an isolation region that in turn is located within a semiconductor substrate. The heater has a thermal output capable or raising the semiconductor substra...	04/27/2010
7691717	Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentr...	04/06/2010
7691718	Dual layer hard mask for block salicide poly resistor (BSR) patterning In general, in one aspect, a method includes forming a semiconductor substrate having an N+ diffusion region, a shallow trench isolation (STI) region adjacent to the N+ diffusion region, and a blocked salicide poly resistor (BSR) region over the STI region. An oxide...	04/06/2010
7670918	Semiconductor device having impurity-doped resistor element Resistor elements are formed by doping impurity into a single crystal film formed on a substrate such as a silicon-on-insulator substrate. A semiconductor device having such resistor elements is used as a detector for detecting an amount of airflow, for example. The...	03/02/2010
7611957	Method of manufacturing semiconductor device The invention provides a method of manufacturing a semiconductor device having a semiconductor resistor layer, which reduces a difference between a theoretical resistance value and a measured resistance value. An interlayer insulation film is formed on the whole sur...	11/03/2009
7601602	Trench type buried on-chip precision programmable resistor An on-chip, ultra-compact, and programmable semiconductor resistor device and device structure and a method of fabrication. Each semiconductor resistor device structure is formed of one or more conductively connected buried trench type resistor elements exhibiting a...	10/13/2009
7544579	System and method for faceting the corners of a resistor protect layer to reduce vertical step height A system and method is disclosed for providing a resistor protect layer to protect a thin film resistor in a semiconductor device. A thin film resistor is formed on a dielectric layer and a resistor protect layer is placed over the thin film resistor. An etch proced...	06/09/2009
7528048	Planar vertical resistor and bond pad resistor and related method Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In ...	05/05/2009
7517770	Method for forming metal line and semiconductor device including the same Disclosed is a technique of manufacturing a semiconductor device and a corresponding device. A metal line may be formed in a semiconductor device using a photoresist pattern with an oxide layer formed on the surface of a metal film, in accordance with embodiments. A...	04/14/2009
7504312	Stacked electrical resistor pad for optical fiber attachment An electrical resistor structure overlies a substrate and comprises a composite resistor having a first resistor of relatively low resistance and a second resistor of relatively high resistance overlying the first resistor. First and second electrodes make contact w...	03/17/2009
7459371	Method for non-volatile memory fabrication A method for non-volatile memory fabrication is provided, in which a substrate is provided, a bottom electrode is formed on the substrate, a solution with precursors of Zr and Sr is coated on the bottom electrode, the solution on the bottom electrode surface is drie...	12/02/2008
7456075	Resistance dividing circuit and manufacturing method thereof A resistance dividing circuit including silicide layers respectively formed only on branch portions of a linear polysilicon resistance wiring having the branch portions. Contact plugs are connected to the resistance wiring via the silicide layers, and fetching elect...	11/25/2008
7442605	Resistively switching memory The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to ...	10/28/2008
7441329	Fabrication process circuit board with embedded passive component A process for fabricating a circuit board with embedded passive component is provided. A conductive layer including a first surface and a second surface opposing to the first surface is provided. The conductive layer has first through holes passing through the condu...	10/28/2008
7439146	Field plated resistor with enhanced routing area thereover An integrated circuit includes a field plated resistor having enhanced area thereover for routing metal conductors, formed in the same layer of metal as forms contacts to the resistor, is fabricated by a sequence of processing steps. A resistor having a resistor bod...	10/21/2008
7439150	Method of manufacturing a semiconductor device In one embodiment, to fabricate a semiconductor device, a first insulation interlayer is formed on a substrate. A contact pad is formed through the first insulation interlayer. An etch stop layer and a second insulation interlayer are sequentially formed on the firs...	10/21/2008
7439147	Resistor of semiconductor device and method for fabricating the same A resistor for a semiconductor device is provided. The resistor can include a first polysilicon layer formed on a semiconductor substrate; an insulating layer formed on regions of the first polysilicon layer; a second polysilicon layer formed on the insulating layer...	10/21/2008
7427551	High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected i...	09/23/2008
7407861	Method and system for high-speed, precise micromachining an array of devices A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. The number of resistance measurements are limited by using non-measuremen...	08/05/2008
7402871	Semiconductor device having resistor and method of fabricating the same In a semiconductor device having a resistor and a method of fabricating the same, the device includes a semiconductor substrate having a cell region and a peripheral region. A lower interlayer insulating layer is disposed on the semiconductor substrate. A buffer pad...	07/22/2008
7387938	Methods of forming phase change storage cells for memory devices Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material pattern. The first high-resist pha...	06/17/2008

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Class 438/382 - Resistor