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| Number | Title | Issue Date |
| 8148229 | Method for manufacturing a semiconductor light-receiving device Disclosed is a method for manufacturing a semiconductor light-receiving device having high reproducibility and reliability. Specifically disclosed is a semiconductor light-receiving device 100 with a mesa structure wherein a light-absorbing layer 6, an... | 04/03/2012 |
| 8093133 | Transient voltage suppressor and methods Transient voltage suppressor and method for manufacturing the transient voltage suppressor having a dopant or carrier concentration in a portion of a gate region near a Zener region that is different from a dopant concentration in a portion of a gate region that is ... | 01/10/2012 |
| 8003478 | Method of forming a bi-directional diode and structure therefor In one embodiment, a bi-directional diode structure is formed to have a substantially symmetrical current-voltage characteristic. ... | 08/23/2011 |
| 7955941 | Method of forming an integrated semiconductor device and structure therefor In one embodiment, a plurality of ESD devices are used to form an integrated semiconductor filter circuit. Additional diodes are formed in parallel with the ESD structures in order to increase the input capacitance. ... | 06/07/2011 |
| 7666751 | Method of forming a high capacitance diode and structure therefor In one embodiment, high doped semiconductor channels are formed in a semiconductor region of an opposite conductivity type to increase the capacitance of the device. ... | 02/23/2010 |
| 7582537 | Zener diode and methods for fabricating and packaging same A zener diode and methods for fabricating and packaging same are disclosed, whereby contact hole forming process exposing a diffusion layer is removed to enable to simplify the fabricating process, and the diffusion length not contacting the electrode line is determ... | 09/01/2009 |
| 7553734 | Method for forming an avalanche photodiode Methods for fabricating an avalanche photodiode (APD), wherein the APD provides both high optical coupling efficiency and low dark count rate. The APD is formed such that it provides an active region of sufficient width to enable high optical coupling efficiency and... | 06/30/2009 |
| 7384854 | Method of forming low capacitance ESD robust diodes A method of forming a diode having a capacitance below 0.1 pF and a breakdown voltage of at least 500V. The method including forming an anode of a first conductivity type and a cathode of a second conductivity type disposed below the anode. At least one of the catho... | 06/10/2008 |
| 7341921 | Photodiode The invention provides a method of manufacturing an avalanche diode comprising the steps of applying a mask (6) over an active diode region (5) in a wafer (1), and damaging the region the surrounding the active diode region by breaking bonds in ... | 03/11/2008 |
| 7326970 | Metamorphic avalanche photodetector A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and responsively produces primary charge carriers, and an avalanche multipl... | 02/05/2008 |
| 7323709 | Method for increasing efficiency of thermotunnel devices The present invention comprises a tunneling device in which the collector electrode is modified so that tunneling of higher energy electrons from the emitter electrode to the collector electrode is enhanced. In one embodiment, the collector electrode is contacted wi... | 01/29/2008 |
| 7309638 | Method of manufacturing a semiconductor component A semiconductor component comprises a first semiconductor region (110, 310), a second semiconductor region (120, 320) above the first semiconductor region, a third semiconductor region (130, 330) above the second semiconductor region, a fourth s... | 12/18/2007 |
| 7305839 | Thermal transfer device and system and method incorporating same A thermal transfer device having a first substrate layer, a second substrate layer and first and second electrodes disposed between the first substrate layer and the second substrate layer. The thermal transfer device also includes a release layer disposed between t... | 12/11/2007 |
| 7303948 | Semiconductor device including MOSFET having band-engineered superlattice A semiconductor device includes a substrate, and at least one MOSFET adjacent the substrate. The MOSFET may include a superlattice channel that, in turn, includes a plurality of stacked groups of layers. The MOSFET may also include source and drain regions laterally... | 12/04/2007 |
| 7303969 | Method of making interband tunneling diodes Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not ... | 12/04/2007 |
| 7288457 | Method for making semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one MOSFET by forming spaced apart source and drain regions and a superlattice on the substrate so that the superlattice is between the source and drain r... | 10/30/2007 |
| 7279701 | Semiconductor device comprising a superlattice with upper portions extending above adjacent upper portions of source and drain regions A semiconductor device may include a semiconductor substrate and at least one metal oxide semiconductor field-effect transistor (MOSFET). The MOSFET may include spaced apart source and drain regions on the semiconductor substrate, and a superlattice including a plur... | 10/09/2007 |
| 7279699 | Integrated circuit comprising a waveguide having an energy band engineered superlattice An integrated circuit may include at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stac... | 10/09/2007 |
| 7265002 | Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel A method for making a semiconductor device may include providing a substrate, and forming at least one MOSFET adjacent the substrate by forming a superlattice including a plurality of stacked groups of layers and a semiconductor cap layer on an uppermost group of la... | 09/04/2007 |
| 7262610 | Method for manufacturing and testing semiconductor devices on a resin-coated wafer A semiconductor device test apparatus according to the present invention includes a circuit board 103 and a film 105. A plurality of electrodes 103c are formed at the circuit board 103 at positions that face opposite a plurality of... | 08/28/2007 |
| 7260939 | Thermal transfer device and system and method incorporating same A method of manufacturing a thermal transfer device including providing first and second thermally conductive substrates that are substantially atomically flat, providing a patterned electrical barrier having a plurality of closed shapes on the first thermally condu... | 08/28/2007 |
| 7253549 | Thermionic vacuum diode device with adjustable electrodes In accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes and as a means for controlling the separation between the electrode pair. In a preferred embod... | 08/07/2007 |
| 7238582 | Semiconductor device and process of producing the same The present invention provides a polycrystalline silicon conducting structure (e.g., a resistor) whose resistance value is controlled, and can be less variable and less dependent on temperature with respect to any resistant value, and a process of producing the same... | 07/03/2007 |
| 7229902 | Method for making a semiconductor device including a superlattice with regions defining a semiconductor junction A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and ... | 06/12/2007 |
| 7227174 | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying lay... | 06/05/2007 |
| 7202494 | FINFET including a superlattice A semiconductor device may include at least one fin field-effect transistor (FINFET) comprising a fin, source and drain regions adjacent opposite ends of the fin, and a gate overlying the fin. The fin may include at least one superlattice including a plurality of st... | 04/10/2007 |
| 7180199 | Semiconductor device and semiconductor wafer A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractiv... | 02/20/2007 |
| 7169006 | Thermionic vacuum diode device with adjustable electrodes In accordance with one embodiment of the present invention, a Gap Diode is disclosed in which a tubular actuating element serves as both a housing for a pair of electrodes (92) and as a means for controlling the separation between the electrode pair. In a pre... | 01/30/2007 |
| 7153763 | Method for making a semiconductor device including band-engineered superlattice using intermediate annealing A method for making a semiconductor device may include forming a superlattice including a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at le... | 12/26/2006 |
| 7154129 | Semiconductor arrangement with a p-n transition and method for the production of a semiconductor arrangement A semiconductor system (200), particularly a diode, having a p-n junction is proposed, that is formed as a chip having an edge area, which includes a first layer (2) of a first conductivity type and a second layer (1, 3) of a second conductivity... | 12/26/2006 |
| 7140102 | Electrode sandwich separation Materials bonded together are separated using electrical current, thermal stresses, mechanical force, any combination of the above methods, or any other application or removal of energy until the bonds disappear and the materials are separated. In one embodiment the... | 11/28/2006 |
| 7138341 | Process for making a memory structure An exemplary method for making a memory structure comprises forming a first hard mask layer, forming at least one mask layer above the first hard mask layer, patterning the at least one mask layer, etching the at least one mask layer to form an opening having a firs... | 11/21/2006 |
| 7123792 | Configurable aperiodic grating device The invention relates to the field of grating structures. The invention provides a longitudinal grating having an aperiodic structure, wherein the grating has a selected response characteristic and any repeated unit cell in the structure is significantly longer than... | 10/17/2006 |
| 7109052 | Method for making an integrated circuit comprising a waveguide having an energy band engineered superlattice A method for making an integrated circuit may include forming at least one active optical device and a waveguide coupled thereto. The waveguide may include a superlattice including a plurality of stacked groups of layers. Each group of layers of the superlattice may... | 09/19/2006 |
| 7087882 | Controlling the dynamic range of an avalanche photodiode An avalanche photodiode with a wide dynamic range. An avalanche photodiode with a wide dynamic range is used in fiber-optic communication applications where optical signals of varying powers may be received. The avalanche photodiode includes a field control layer. A... | 08/08/2006 |
| 7078741 | Enhanced photodetector The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type semiconductor layer has graded doping along the path of the carriers. In particu... | 07/18/2006 |
| 7071119 | Method for making a semiconductor device including band-engineered superlattice having 3/1-5/1 germanium layer structure A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked grou... | 07/04/2006 |
| 7061104 | Apparatus for conditioning power and managing thermal energy in an electronic device In one aspect, the present invention is a technique of, and a system for conditioning power for a consuming device. In this regard, a power conditioning module, affixed to an integrated circuit device, conditions power to be applied to the integrated circuit device.... | 06/13/2006 |
| 7056761 | Avalanche diode with breakdown voltage controlled by gate length In an avalanche structure, different breakdown voltages are achieved by making use of a polygate and forming a highly doped p-n junction beneath the polygate, and adjusting the gate length and optionally the bias voltage of the gate. ... | 06/06/2006 |
| 7045761 | Self-pixelating focal plane array with electronic output The present application is directed to a self-pixelating focal plane array and includes a photodetection portion having a body defining a self-pixelating active detection region, and a readout device in electrical communication with the photodetection portion and co... | 05/16/2006 |
