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| Number | Title | Issue Date |
| 8093080 | Optical device having light sensor employing horizontal electrical field The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regio... | 01/10/2012 |
| 8071408 | Method of manufacturing semiconductor light emitting element, and semiconductor light emitting element A method includes steps of: sequentially growing a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type on a growth substrate to form a layered structure; separating the substrate fro... | 12/06/2011 |
| 7939353 | Methods of forming integrated circuits A method of forming an integrated circuit includes forming a fluorine-passivated surface of a substrate. A device quality silicon oxide layer is formed by causing the fluorine-passivated surface to interact with an oxygen-containing gas. Hydroxyl groups are substant... | 05/10/2011 |
| 7927900 | Method of manufacturing thin film transistor including forming a bank for ink jet printing Disclosed is a method of manufacturing a thin film transistor, in which a semiconductor layer and a gate insulating film may be formed through ink jet printing using a single bank, thereby simplifying the manufacturing process and decreasing the manufacturing cost, ... | 04/19/2011 |
| 7879636 | Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region 17 containing a p-type dopant is... | 02/01/2011 |
| 7659130 | Thin film transistor array panel for display and manufacturing method thereof A gate conductor including a gate line, a gate pad and a gate electrode is formed on a substrate. A gate insulating layer, a semiconductor layer, a doped amorphous silicon layer and a conductive layer are deposited in sequence, and then a photoresist film pattern is... | 02/09/2010 |
| 7645625 | Method for fine processing of substrate, method for fabrication of substrate, and light emitting device The present invention provides a method for fine processing of a substrate, a method for fabrication of a substrate, and a light emitting device. In the method for fine processing of a substrate, after removing a single particle layer from the substrate having the s... | 01/12/2010 |
| 7462504 | Surface-emitting type light-emitting diode and fabrication method thereof A surface-emitting type light-emitting diode includes a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a sidewall of the p-n junction layer as well as a periphery portion of a top surface of... | 12/09/2008 |
| 7459325 | MEMS passivation with transition metals Organic surfactants are employed to passivate the surfaces of MEMS devices, such as digital micromirrors. The binding of these surfactants to the surface is improved by first associating with the surface transition metal atoms or ions from Groups IVB, VB, and IVB of... | 12/02/2008 |
| 7407896 | CMOS-compatible light emitting aperiodic photonic structures A fabrication method and materials produce high quality aperiodic photonic structures. Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. From these aper... | 08/05/2008 |
| 7399657 | Ball grid array packages with thermally conductive containers Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or at... | 07/15/2008 |
| 7361278 | Process for producing mass transfer device and apparatus for production thereof A process for producing a mass transfer device is provided which enables packing of a packing material uniformly in a flow channel, and transfers a specified substance by flowing a fluid containing the specified substance through a flow channel on a substrate. A mas... | 04/22/2008 |
| 7354814 | Semiconductor process with first transistor types oriented in a first plane and second transistor types oriented in a second plane A semiconductor fabrication process includes forming a recess in a semiconductor substrate. A silicon germanium film is formed on a sidewall of the recess. A gate dielectric and gate electrode are formed adjacent the silicon germanium film. Source/drain regions are ... | 04/08/2008 |
| 7348225 | Structure and method of fabricating FINFET with buried channel A method of manufacturing a fin structure comprises forming a first structure of a first material type on a wafer and forming a buried channel of a second material adjacent sidewalls of the first structure. The second material type is different than the first materi... | 03/25/2008 |
| 7338821 | Method for the passivation of the mirror-faces surfaces of optical semi-conductor elements The aim of the invention is to simplify known passivation methods. According to said method, the semi-conductor elements are heated and cleaned in a high vacuum with a gaseous, reactive low-energy medium. A closed, insulating or slightly conductive, transparent prot... | 03/04/2008 |
| 7338826 | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN b... | 03/04/2008 |
| 7332756 | Damascene gate structure with a resistive device A semiconductor structure having a damascene gate structure and a resistive device on a semiconductor substrate is disclosed. The structure includes a first dielectric layer having a first opening and a second opening formed on the semiconductor substrate, and one o... | 02/19/2008 |
| 7323217 | Method for making an optical interference type reflective panel An optical-interference type reflective panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple supporting layers are firstly formed. Then, a plurality of first conductive optical film stacks, spacing layers ... | 01/29/2008 |
| 7316784 | Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method o... | 01/08/2008 |
| 7315344 | Liquid crystal display device and method of fabricating the same A method of fabricating a liquid crystal display device includes forming a gate electrode, a gate bus line, and a gate pad on a substrate using a first mask process, forming a gate insulating layer and an active layer on an entire surface of the substrate, forming a... | 01/01/2008 |
| 7300829 | Low temperature process for TFT fabrication Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subject... | 11/27/2007 |
| 7300833 | Process for producing semiconductor integrated circuit device When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and c... | 11/27/2007 |
| 7291363 | Lubricating micro-machined devices using fluorosurfactants A method of lubricating MEMS devices using fluorosurfactants 42. Micro-machined devices, such as a digital micro-mirror device (DMD™) 940, which make repeated contact between moving parts, require lubrication in order to prevent the onset of stiction... | 11/06/2007 |
| 7285436 | Method of manufacturing a semiconductor light-emitting device A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at g... | 10/23/2007 |
| 7285476 | Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring th... | 10/23/2007 |
| 7279351 | Method of passivating semiconductor device In a method of passivating a semiconductor device with two types of transistors, e.g., NMOS and PMOS transistor, the semiconductor device is placed in a pressurized sealed chamber and at least two different passivating gases are introduced into the chamber. The two ... | 10/09/2007 |
| 7269197 | Controlling overspray coating in semiconductor devices A manufacturing method, in which two device bars are bonded prior to facet coating to form a stacked bar pair. In one embodiment, each of the device bars has a p-side and an n-side, each side having a plurality of bonding pads, with at least some bonding pads locate... | 09/11/2007 |
| 7250640 | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate A method of making a bulk crystal substrate of a GaN single crystal includes the steps of forming a molten flux of an alkali metal in a reaction vessel and causing a growth of a GaN single crystal from the molten flux, wherein the growth is continued while replenish... | 07/31/2007 |
| 7228865 | FRAM capacitor stack clean An embodiment of the invention is a method of cleaning a material stack 2 that has a hard mask top layer 8. The method involves cleaning the material stack 2 with a fluorine-based plasma etch. The method further involves rinsing the material sta... | 06/12/2007 |
| 7226798 | Fabrication method for a multi-layered thin film protective layer A fabrication method for a multi-layered thin film protective layer, which is applicable on a substrate having a peripheral circuit area and a pixel cell area, is described. Metal layers and pixel cells are formed on the peripheral circuit area and the pixel cell ar... | 06/05/2007 |
| 7226874 | Substrate processing method A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-exci... | 06/05/2007 |
| 7228043 | Optical waveguide circuit and manufacturing method thereof An optical waveguide circuit comprising a plurality of first cores (203) arranged at intervals widening as they are away from the branch point or the joining point of optical signal, a clad (205) filling at least these first cores, and second cores ( | 06/05/2007 |
| 7228046 | Environmentally stable electro-optic device and method for making same A method is provided for stabilizing an electro-optic substrate employed in a waveguide device. The method comprises cleaning a surface of the substrate, and exposing the device to a reactive oxide to passivate the surface. A layer of sealant is deposited on the sub... | 06/05/2007 |
| 7220612 | Liquid crystal display device and fabricating method thereof A thin film transistor substrate and a fabricating method thereof for simplifying a process are disclosed. In a liquid crystal display device according to the present invention, a gate line is provided on a substrate. A data line crosses the gate line with having a ... | 05/22/2007 |
| 7211454 | Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate The present invention provides an active matrix substrate which can be fabricated at a lower cost and a light emitting device having a large display area fabricated by a vapor deposition system which makes a film with uniform thickness for a large substrate. Accordi... | 05/01/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7211446 | Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory A method of patterning a magnetic tunnel junction (MTJ) stack is provided. According to such method, an MTJ stack is formed having a free layer, a pinned layer and a tunnel barrier layer disposed between the free layer and the pinned layer. A first area of the MTJ s... | 05/01/2007 |
| 7203001 | Optical retarders and related devices and systems In certain aspects, the disclosure relates to articles that include a plurality of walls configured to form a grating. Each of the plurality of walls can include a layer of a first material and a layer of a second material different from the first material. The arti... | 04/10/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7192787 | Highly nonlinear magnetic tunnel junctions for dense magnetic random access memories MRAMs are provided with cells offering low current leakage for partially selected cells. MRAM cells are made with magnetic tunnel junctions having barriers that meet predetermined low barrier heights and predetermined thicknesses. The barrier heights are preferably ... | 03/20/2007 |
