Quotables
"What, sir, would you make a ship sail against the wind and currents by lighting a bonfire under her deck? I pray you, excuse me, I have not the time to listen to such nonsense."
Napoleon Bonaparte ; When told of the Robert Fulton steamboat
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8324064 | Methods for forming varactor diodes Methods are disclosed for forming an improved varactor diode having first and second terminals. The methods include providing a substrate having a first surface in which are formed isolation regions separating first and second parts of the diode. A varactor junction... | 12/04/2012 |
| 8105912 | High voltage tolerant metal-oxide-semiconductor device A method for increasing a voltage tolerance of a MOS device having a first capacitance value associated therewith is provided. The method includes the steps of: connecting at least a first capacitor in series with the MOS device, the first capacitor having a first c... | 01/31/2012 |
| 7989302 | Methods of forming a hyper-abrupt P-N junction and design structures for an integrated circuit Methods of forming hyper-abrupt p-n junctions and design structures for an integrated circuit containing devices structures with hyper-abrupt p-n junctions. The hyper-abrupt p-n junction is defined in a SOI substrate by implanting a portion of a device layer to have... | 08/02/2011 |
| 7943472 | CoSi2 Schottky diode integration in BiSMOS process Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The result... | 05/17/2011 |
| 7943471 | Diode with asymmetric silicon germanium anode The present invention is directed to a diode with an asymmetric silicon germanium anode and methods of making same. In one illustrative embodiment, the diode includes an anode comprising a P-doped silicon germanium material formed in a semiconducting substrate, an N... | 05/17/2011 |
| 7919382 | Methods for forming varactor diodes An improved varactor diode (40) is obtained by providing a substrate (70) having a first surface (73) and in which are formed a first N region (46) having a first peak dopant concentration (47) located at a first depth (48) ... | 04/05/2011 |
| 7829424 | Package configuration and manufacturing method enabling the addition of decoupling capacitors to standard package designs The present invention is directed to a method of fabricating an integrated circuit package having decoupling capacitors using a package design conceived for use without decoupling capacitors. The package is implemented with a minimal redesign of the original design ... | 11/09/2010 |
| 7824997 | Membrane suspended MEMS structures A method for micro-machining a varactor that is part of a membrane suspended MEMS tunable filter. In one non-limiting embodiment, the method includes providing a main substrate; depositing a membrane on the main substrate; depositing and patterning a plurality of sa... | 11/02/2010 |
| 7772080 | Semiconductor device and method of providing electrostatic discharge protection for integrated passive devices A semiconductor device has an integrated passive device (IPD) formed on a substrate. The IPD can be a metal-insulator-metal capacitor or an inductor formed as a coiled conductive layer. A signal interconnect structure is formed on the front side or backside of the s... | 08/10/2010 |
| 7741187 | Lateral junction varactor with large tuning range Large tuning range junction varactor includes first and second junction capacitors coupled in parallel between first and second varactor terminals. First and second plates of the capacitors are formed by three alternating doped regions in a substrate. The second and... | 06/22/2010 |
| 7704845 | Varactor and method for manufacturing the same Disclosed is a varactor and/or variable capacitor. The varactor/variable capacitor includes a plurality of first conductive-type wells vertically formed on a substrate, a plurality of second conductive-type ion implantation areas formed in the first conductive-type ... | 04/27/2010 |
| 7700453 | Method for forming hyper-abrupt junction varactors Method of fabricating a varactor that includes providing a semiconductor substrate, doping a lower region of the semiconductor substrate with a first dopant at a first energy level, doping a middle region of the semiconductor substrate with a second dopant at a seco... | 04/20/2010 |
| 7625804 | Structure for realizing integrated circuit having Schottky diode and method of fabricating the same An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with ... | 12/01/2009 |
| 7618873 | MOS varactors with large tuning range A MOS varactor includes a shallow PN junction beneath the surface of the substrate of a MOS structure. In depletion mode, the depletion region of the MOS structure merges with the depletion region of the shallow PN junction. This increases the total width of the dep... | 11/17/2009 |
| 7611956 | Semiconductor device having MOS varactor and methods for fabricating the same A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed between the metal gate electrode and the semiconductor substrate, and a ca... | 11/03/2009 |
| 7449389 | Method for fabricating a semiconductor structure A method for fabricating a semiconductor including defining a first component region and a second component region in a semiconductor body is provided. A first epitaxial layer is formed through the first component region. A second epitaxial layer is formed over the ... | 11/11/2008 |
| 7386065 | Voltage controlled oscillator (VCO) suitable for use in frequency shift keying (FSK) system A voltage controlled oscillator (VCO), suitable for use in a frequency shift keying (FSK) system. The VCO device comprises a switching varactor unit, having a first terminal and a second terminal, wherein the switching varactor unit produces a capacitance, according... | 06/10/2008 |
| 7378327 | Method for fabricating a junction varactor with high Q factor A junction varactor includes a gate finger lying across an ion well of a semiconductor substrate; a gate dielectric situated between the gate finger and the ion well; a first ion diffusion region with first conductivity type located in the ion well at one side of th... | 05/27/2008 |
| 7332787 | Structure for realizing integrated circuit having schottky biode and method of fabricating the same An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with ... | 02/19/2008 |
| 7268646 | Temperature controlled MEMS resonator and method for controlling resonator frequency There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a temperature compensated microelectromechanical resonator as well as fabricating, manufacturing, providing and/or controlling microelectromechanical reso... | 09/11/2007 |
| 7265019 | Elastomeric CMOS based micro electromechanical varactor A micro electro-mechanical system (MEMS) variable capacitor is described, wherein movable comb electrodes of opposing polarity are fabricated simultaneously on the same substrate and are independently actuated. The electrodes are formed in an interdigitated fashion ... | 09/04/2007 |
| 7253703 | Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate having a cavity part at a predetermined region... | 08/07/2007 |
| 7253073 | Structure and method for hyper-abrupt junction varactors A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various... | 08/07/2007 |
| 7223667 | Compensated linearity voltage-control-capacitor device by standard CMOS process Apparatus and method of providing a CMOS varactor device having improved linearity. At least two differential varactor elements are connected in parallel. Each of the differential elements includes first, second and third doped regions in a well. A first gate contro... | 05/29/2007 |
| 7211493 | Variable capacitor structure and method of manufacture A variable capacitor comprising a substrate having a first type ion-doped buried layer, a first type ion-doped well, a second type ion-doped region and a conductive layer thereon. The first type ion-doped well is formed within the substrate. The first type ion-doped... | 05/01/2007 |
| 7204425 | Enhanced identification appliance An enhanced identification appliance, such as a wristband, bracelet, patch, headband, neckband, ankleband, legband, card, sticker, or other wearable appliance, may have a biometric, chemical, optical, heat, pressure, humidity, electromagnetic, and/or acoustic sensor... | 04/17/2007 |
| 7202761 | Temperature compensation for silicon MEMS resonator Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion ... | 04/10/2007 |
| 7203052 | Method of fabricating MEMS tunable capacitor with wide tuning range A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one anothe... | 04/10/2007 |
| 7200908 | Method of making a variable capacitor component A method of making a variable capacitor by forming a grove portion in an insulating substrate, two upper portions of the substrate located on either side of the groove portion forming two lateral edges, a conductive layer covering the inside of the groove portion, a... | 04/10/2007 |
| 7196397 | Termination design with multiple spiral trench rings A semiconductor device having a termination structure, which includes at least one spiral resistor disposed within a spiral trench and connected between two power poles of the device. ... | 03/27/2007 |
| 7183628 | Structure and method of hyper-abrupt junction varactors A method and device providing a HA junction varactor which may be fabricated with a reduced variation in C-V tuning curve from one varactor to the next. The process produces a varactor with an active region formed substantially by doping an Si substrate with various... | 02/27/2007 |
| 7173316 | Semiconductor device An N type semiconductor layer is epitaxially grown on a P type semiconductor substrate of which one end is grounded, and an element isolation layer made of a P type diffusion layer is formed by means of diffusion around the N type semiconductor layer in order to ele... | 02/06/2007 |
| 7169679 | Varactor with improved tuning range A varactor has a plurality of alternating P− wells and N+ regions formed in a silicon layer. Each of the P− wells forms a first N+/P− junction with the N+ region on one of its side and a second N+/P− junction with the N+ region on the other of its sides. A g... | 01/30/2007 |
| 7160747 | Methods of forming semiconductor devices having self aligned semiconductor mesas and contact layers Methods of forming a semiconductor device can include forming a semiconductor structure on a substrate, the semiconductor structure having mesa sidewalls and a mesa surface opposite the substrate. A contact layer can be formed on the mesa surface wherein the contact... | 01/09/2007 |
| 7162400 | Simulation method, simulation program, and semiconductor device manufacturing method each employing boundary conditions An aspect of the present invention provides a method of carrying out a simulation with simulation data, including, determining whether or not the simulation data includes boundary conditions set for a boundary of a calculation area set for the simulation, computing ... | 01/09/2007 |
| 7141989 | Methods and apparatus for a MEMS varactor A micro-electro mechanical system (MEMS) variable capacitor (varactor) generally includes a substrate (102), a first capacitive plate (112) formed on the substrate, a flexible structure (150) coupled to the substrate, a second capacitive plate (... | 11/28/2006 |
| 7137300 | Parylene capacitive accelerometer utilizing electrical fringing field sensing and method of making An accelerometer device comprises a dielectric seismic mass separated by a gap from an underlying comb-shaped planar capacitor. The principle for measuring acceleration detecting capacitance change according to movement of the dielectric mass in the fringe electrica... | 11/21/2006 |
| 7135375 | Varactors for CMOS and BiCMOS technologies Varactors are provided which have a high tunability and/or a high quality factor associated therewith as well as methods for fabricating the same. One type of varactor disclosed is a quasi hyper-abrupt base-collector junction varactor which includes a substrate havi... | 11/14/2006 |
| 7132696 | Intermeshed guard bands for multiple voltage supply structures on an integrated circuit, and methods of making same The present invention is generally directed to intermeshed guard bands for multiple voltage supply regions or structures on an integrated circuit, and methods of making same. In one illustrative embodiment, an integrated circuit is provided that comprises a pluralit... | 11/07/2006 |
| 7126438 | Circuit and method for transmitting an output signal using a microelectromechanical systems varactor and a series inductive device A circuit and method for transmitting an output signal utilizes an inductive device connected in series with a microelectromechanical systems (MEMS) varactor to increase the potential difference across the MEMS varactor due to the output signal by introducing induct... | 10/24/2006 |
