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| Number | Title | Issue Date |
| 8084331 | Method of treating semiconductor element In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semico... | 12/27/2011 |
| 8003477 | Method for making a P-I-N diode crystallized adjacent to a silicide in series with a dielectric antifuse A method is described for monolithically forming a first memory level above a substrate, the method including: (a) forming a plurality of first substantially parallel, substantially coplanar conductors above the substrate, the first conductors extending in a first d... | 08/23/2011 |
| 7855119 | Method for forming polycrystalline thin film bipolar transistors A method is described for forming a semiconductor device comprising a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germani... | 12/21/2010 |
| 7682920 | Method for making a p-i-n diode crystallized adjacent to a silicide in series with a dielectric antifuse A method is described for forming a nonvolatile one-time-programmable memory cell having reduced programming voltage. A contiguous p-i-n diode is paired with a dielectric rupture antifuse formed of a high-dielectric-constant material, having a dielectric constant gr... | 03/23/2010 |
| 7598150 | Compensation techniques for substrate heating processes Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory ... | 10/06/2009 |
| 7397111 | Semiconductor wafer, an electronic component, and a component carrier for producing the electronic component An electronic component includes a semiconductor chip with a chip topside, an integrated circuit, and a chip backside. The chip backside includes a magnetic layer. The electronic component further includes a chip carrier with a magnetic layer on its carrier topside.... | 07/08/2008 |
| 7348222 | Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film. In the present inventio... | 03/25/2008 |
| 7344925 | Semiconductor device, method of manufacturing the same, and method of designing the same An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the pre... | 03/18/2008 |
| 7343661 | Method for making condenser microphones A method for making condenser microphones includes: forming a fixed electrode layer structure of a plurality of fixed electrode units; forming a sacrificial layer of a plurality of sacrificial units on one side of the fixed electrode layer structure; forming a diaph... | 03/18/2008 |
| 7329620 | System and method for providing an integrated circuit having increased radiation hardness and reliability A system and method is disclosed for providing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of ... | 02/12/2008 |
| 7282418 | Method for fabricating a self-aligned bipolar transistor without spacers According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post situated on the top surface of the base. The bipolar transistor also comprises a conformal layer situated o... | 10/16/2007 |
| 7259103 | Fabrication method of polycrystalline silicon TFT A method of fabricating polycrystalline silicon thin film transistor according to the present invention includes: depositing a buffer layer on a substrate; depositing an amorphous silicon layer on the buffer layer with a predetermined thickness; crystallizing the de... | 08/21/2007 |
| 7238565 | Methodology for recovery of hot carrier induced degradation in bipolar devices A method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avala... | 07/03/2007 |
| 7232734 | Radiation emitting semiconductor device and method of manufacturing such a device Radiation-emitting semiconductor device and method of manufacturing such a device. The invention relates to a radiation-emitting semiconductor device (10) comprising a silicon-containing semiconductor body (1) and a substrate (2), which semicond... | 06/19/2007 |
| 7226835 | Versatile system for optimizing current gain in bipolar transistor structures Disclosed are apparatus and methods for designing electrical contact for a bipolar emitter structure. The area of an emitter structure (106, 306, 400, 404) and the required current density throughput of an electrical contact structure (108, 308, 402, 406 | 06/05/2007 |
| 7192818 | Polysilicon thin film fabrication method A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silic... | 03/20/2007 |
| 7187507 | Optical component and laser irradiation apparatus The present invention provides an optical component for fixing a lens comprising a base, a holder, and a fastener. The base has a concave side surface and at least one first hole. The holder has a cylindrical shape and has a second hole penetrating through a center ... | 03/06/2007 |
| 7160764 | Laser annealing method and semiconductor device fabricating method When the second harmonic of a YAG laser is irradiated onto semiconductor films, concentric-circle patterns are observed on some of the semiconductor films. This phenomenon is due to the non-uniformity of the properties of the semiconductor films. If such semiconduct... | 01/09/2007 |
| 7157320 | Semiconductor device and process of production of same A semiconductor device comprising: a first insulating film formed on a semiconductor substrate; a semiconductor layer at least a part of which is formed on the first insulating film; a second insulating film comprising a non-doped silicon oxide film and formed on th... | 01/02/2007 |
| 7148091 | Method of manufacturing thin film transistor Impurity ions contained in a semiconductor layer are diffused downwardly from a gate electrode by irradiating laser light from the back surface of a transparent substrate after source-drain regions are formed. Thus, a GOLD structure is formed. Consequently, the GOLD... | 12/12/2006 |
| 7112458 | Method of forming a liquid crystal display An active layer of a P-type low temperature polysilicon thin film transistor and a bottom electrode of a storage capacitor are first formed. Then, a P-type source/drain is formed and the bottom electrode is doped with dopants. A gate insulator, a gate electrode, a c... | 09/26/2006 |
| 7105415 | Method for the production of a bipolar transistor The invention relates to a method for producing a bipolar transistor. A semiconductor substrate is provided that encompasses a collector area of a first conductivity type, which is embedded therein and is bare towards the top. A monocrystalline base area is provided... | 09/12/2006 |
| 7087979 | Bipolar transistor with an ultra small self-aligned polysilicon emitter The intrinsic base region of a bipolar transistor is formed to avoid a chemical interaction between the chemicals used in a chemical mechanical polishing step and the materials used to form the base region. The method includes the step of forming a trench in a layer... | 08/08/2006 |
| 7037797 | Localized heating and cooling of substrates The present invention is directed to an apparatus and process for locally heating and/or cooling of semiconductor wafers in thermal processing chambers. In particular, the apparatus of the present invention includes a device for heating or cooling localized regions ... | 05/02/2006 |
| 7015057 | Method of manufacturing a drive circuit of active matrix device A data holding control signal for each data line is supplied to a plurality of source followers that are connected together in parallel. The parallel-connected source followers are a combination of at least one first follower that is illuminated with laser light onl... | 03/21/2006 |
| 6962825 | Exposure apparatus Disclosed is an exposure apparatus for printing, by exposure, a pattern of an original on a substrate, which includes a housing tightly filled with a predetermined ambience and for accommodating therein at least a portion of an exposure light optical axis, and a det... | 11/08/2005 |
| 6930009 | Laser synthesized wide-bandgap semiconductor electronic devices and circuits A laser apparatus and methods are disclosed for synthesizing areas of wide-bandgap semiconductor substrates or thin films, including wide-bandgap semiconductors such as silicon carbide, aluminum nitride, gallium nitride and diamond to produce electronic devices and ... | 08/16/2005 |
| 6913982 | Method of fabricating a probe of a scanning probe microscope (SPM) having a field-effect transistor channel A probe of a scanning probe microscope (SPM) having a field-effect transistor (FET) structure at the tip of the probe, and a method of fabricating the probe are provided. The SPM probe having a source, channel, and drain is formed by etching a single crystalline sil... | 07/05/2005 |
| 6908805 | Method of manufacturing dual gate oxide film The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distribut... | 06/21/2005 |
| 6890839 | Method and apparatus for laser annealing configurations of a beam An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuratio... | 05/10/2005 |
| 6884699 | Process and unit for production of polycrystalline silicon film A process for making a polycrystalline silicon film includes forming, on a glass substrate, an amorphous silicon film having a first region and a second region that contacts the first region, forming a first polycrystalline portion by irradiating the first region of... | 04/26/2005 |
| 6872638 | Method of manufacturing a semiconductor device A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradien... | 03/29/2005 |
| 6872645 | Methods of positioning and/or orienting nanostructures Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructures to provide oriented and p... | 03/29/2005 |
| 6870199 | Semiconductor device having an electrode overlaps a short carrier lifetime region A semiconductor device that helps to prevent the occurrence of current localization in the vicinity of an electrode edge and improves the reverse-recovery withstanding capability. The semiconductor device according to the invention includes a first carrier lifetime ... | 03/22/2005 |
| 6852601 | Heat treatment method that includes a low negative pressure When carrying workpieces from a loading area in which the workpieces are handled into a heat treatment furnace to make the workpieces subjected to a heat treatment process using a predetermined process gas, the loading area is evacuated and controlled at a predeterm... | 02/08/2005 |
| 6847006 | Laser annealing apparatus and semiconductor device manufacturing method This invention is intended to provide a laser annealing method by employing a laser annealer lower in running cost so as to deal with a large-sized substrate, for preventing or decreasing the generation of a concentric pattern and to provide a semiconductor device m... | 01/25/2005 |
| 6818568 | Method of using beam homogenizer and laser irradiation apparatus There is provided a beam homogenizer which can unify the energy distribution of a linear laser beam in a longitudinal direction. In the beam homogenizer including cylindrical lens groups for dividing a beam, and a cylindrical lens and a cylindrical lens group for co... | 11/16/2004 |
| 6800541 | Pulse laser irradiation method for forming a semiconductor thin film A method of irradiation of plural pulse laser beams onto one position of a non-single crystal semiconductor, wherein the pulse laser beams are not higher in energy density than an energy density threshold value necessary for causing a micro-crystallization of the no... | 10/05/2004 |
| 6790722 | Logic SOI structure, process and application for vertical bipolar transistor A method and structure for forming an emitter in a vertical bipolar transistor includes providing a substrate having a collector layer and a base layer over the collector layer, forming a patterning mask over the collector layer, and filling openings in the mask wit... | 09/14/2004 |
| 6784017 | Method of creating a high performance organic semiconductor device A high temperature thermal annealing process creates a low resistance contact between a metal material and an organic material of an organic semiconductor device, which improves the efficiency of carrier injection. The process forms ohmic contacts and Schottky conta... | 08/31/2004 |
