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| Number | Title | Issue Date |
| 7767480 | Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors A method of manufacturing a distributed Bragg reflector (DBR) in group III-V semiconductor compounds with improved optical and electrical characteristics is provided. A selected DBR structure is achieved by sequential exposure of a substrate to predetermined combina... | 08/03/2010 |
| 7449353 | Co-doping for fermi level control in semi-insulating Group III nitrides Semi-insulating Group III nitride layers and methods of fabricating semi-insulating Group III nitride layers include doping a Group III nitride layer with a shallow level p-type dopant and doping the Group III nitride layer with a deep level dopant, such as a deep l... | 11/11/2008 |
| 7437047 | Optical materials with selected index-of-refraction Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light is used to shift the index-of-refraction of planar optical structures to shift the index-of-refraction of the ph... | 10/14/2008 |
| 7399657 | Ball grid array packages with thermally conductive containers Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or at... | 07/15/2008 |
| 7368308 | Methods of fabricating semiconductor heterostructures Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/06/2008 |
| 7364697 | System for infrared spectroscopic imaging of libraries Methods and apparatus for screening diverse arrays of materials using infrared imaging techniques are provided. Typically, each of the individual materials on the array will be screened or interrogated for the same material characteristic. Once screened, the individ... | 04/29/2008 |
| 7271021 | Light-emitting device with a current blocking structure and method for making the same A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure include... | 09/18/2007 |
| 7259036 | Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduc... | 08/21/2007 |
| 7224882 | Optical materials with selected index-of-refraction Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light is used to shift the index-of-refraction of planar optical structures to shift the index-of-refraction of the ph... | 05/29/2007 |
| 7214598 | Formation of lattice-tuning semiconductor substrates In order to reduce dislocation pile-ups in a virtual substrate, a buffer layer 32 is provided, between an underlying Si substrate 34 and an uppermost constant composition SiGe layer 36, which comprises alternating graded SiGe layers 38 an... | 05/08/2007 |
| 7211458 | Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor lay... | 05/01/2007 |
| 7052931 | Flat panel display device with first electrode having concentration gradient and fabrication method thereof A method of fabricating a flat panel display comprises forming a first electrode, forming at least one organic electroluminescent layer on the first electrode, forming an second electrode, wherein the first electrode comprises a first component of a transparent mate... | 05/30/2006 |
| 7049627 | Semiconductor heterostructures and related methods Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading di... | 05/23/2006 |
| 7042011 | Compound semiconductor laser A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101, an active layer 106 formed on the first cladding layer, a seco... | 05/09/2006 |
| 7042023 | Semiconductor light emitting device and method for producing the same A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridg... | 05/09/2006 |
| 7009224 | Metamorphic long wavelength high-speed photodiode A metamorphic device including a substrate structure upon which a semiconductor device can be formed. In the metamorphic device, a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading layer which grades past t... | 03/07/2006 |
| 7005681 | Radiation-emitting semiconductor component and method for making same A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) ... | 02/28/2006 |
| 6888984 | Amorphous silicon alloy based integrated spot-size converter A photonic device suitable for being optically coupled to at least one optical fiber having a first spot-size, the device including: at least one photonic component; and, a graded index lens optically coupled between the at least one photonic component and the at le... | 05/03/2005 |
| 6881601 | Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same A nitride compound semiconductor light-emitting device having a stack of layers including an active layer for a light emitting device and a method of manufacturing the device is disclosed. The method includes the steps of growing a first layer on a substrate at a fi... | 04/19/2005 |
| 6864115 | Low threading dislocation density relaxed mismatched epilayers without high temperature growth A semiconductor structure and method of processing same including a substrate, a lattice-mismatched first layer deposited on the substrate and annealed at a temperature greater than 100° C. above the deposition temperature, and a second layer deposited on the first... | 03/08/2005 |
| 6855570 | Compound semiconductor laser A compound semiconductor laser of a III group nitride semiconductor of the present invention includes a first cladding layer 104 of a first conduction type formed on a substrate 101, an active layer 106 formed on the first cladding layer, a seco... | 02/15/2005 |
| 6853011 | Light emitting diode and method of making the same A light emitting epi-layer structure contains a temporary substrate of absorption light type on one side. The other side thereof is then adhered to a transparent substrate of light absorption free by BCB bonding layer. After that, the light absorption substrate port... | 02/08/2005 |
| 6841409 | Group III-V compound semiconductor and group III-V compound semiconductor device using the same An AlGaInP layer is formed on a substrate made of GaAs, and an AlGaAs layer is formed on the AlGaInP layer via a buffer layer therebetween. The buffer layer has a thickness of about 1.1 nm and is made of AlGaInP whose Ga content is smaller than that of the AlGaInP l... | 01/11/2005 |
| 6806502 | 3-5 Group compound semiconductor and light emitting device Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1×1017 cm− or more and 1×1021 cm−3 or less, which can be laminated to control the carrier concentration of an InGaAlN-type mi... | 10/19/2004 |
| 6774389 | Optical semiconductor device A semiconductor optical device with improved optical gain and enhanced switching characteristics. The semiconductor optical device includes positive and negative electrodes for providing holes and electrons, respectively. The semiconductor optical device also includ... | 08/10/2004 |
| 6759312 | Co-implantation of group VI elements and N for formation of non-alloyed ohmic contacts for n-type semiconductors Non-alloyed, low resistivity contacts for semiconductors using Group III-V and Group II-VI compounds and methods of making are disclosed. Co-implantation techniques are disclosed. ... | 07/06/2004 |
| 6727109 | Method of fabricating long wavelength vertical-cavity surface-emitting lasers The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting... | 04/27/2004 |
| 6720196 | Nitride-based semiconductor element and method of forming nitride-based semiconductor A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The ... | 04/13/2004 |
| 6716654 | Light-emitting diode with enhanced brightness and method for fabricating the same The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers insid... | 04/06/2004 |
| 6716655 | Group III nitride compound semiconductor element and method for producing the same An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed fro... | 04/06/2004 |
| 6689626 | Flexible substrate The invention relates to a substrate comprising a glass sheet (1) having a thickness which is smaller than or equal to 0.1 mm, the glass sheet (1) being provided with a layer of a synthetic resin material (2) having a thickness which is smaller than or eq... | 02/10/2004 |
| 6653158 | Double intracavity contacted long-wavelength VCSELs and method of fabricating same A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding ... | 11/25/2003 |
| 6627469 | Methods for forming semiconductor lenses on substrates A lens is formed out of semiconductor material. The semiconductor produces light which is coupled to the lens. The lens focuses the light and also minimizes refractive reflection. The lens is formed by a graded aluminum alloy, which is oxidized in a later... | 09/30/2003 |
| 6623998 | Method for manufacturing group III nitride compound semiconductor device A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the gr... | 09/23/2003 |
| 6617188 | Quantum well intermixing The present invention provides a novel technique based on gray scale mask patterning (110), which requires only a single lithography and etching step (110, 120) to produce different thickness of SiO2 implantation mask (13) in selected regions f... | 09/09/2003 |
| 6599133 | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By g... | 07/29/2003 |
| 6597017 | Semiconductor device, surface emitting semiconductor laser and edge emitting semiconductor laser Provided is a semiconductor device that has pseudo lattice matched layers with good crystallinity, formed with lattice mismatched materials. Tensile-strained n-type Al0.5 Ga0.5 N layers (lower side) and compressive-strained n-type Ga... | 07/22/2003 |
| 6589808 | GaN type semiconductor device A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.... | 07/08/2003 |
| 6558973 | Metamorphic long wavelength high-speed photodiode A method and apparatus for fabricating a metamorphic long-wavelength, high-speed photodiode, wherein a buffer layer matching a substrate lattice constant is formed at normal growth temperatures and a thin grading region which grades past the desired latti... | 05/06/2003 |
| 6514784 | Laser-induced bandgap shifting for photonic device integration To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructu... | 02/04/2003 |
