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| Number | Title | Issue Date |
| 7678597 | Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface... | 03/16/2010 |
| 7410856 | Methods of forming vertical transistors A vertical transistor forming method includes forming a first pillar above a first source/drain and between second and third pillars, providing a first recess between the first and second pillars and a wider second recess between the first and third pillars, forming... | 08/12/2008 |
| 7399657 | Ball grid array packages with thermally conductive containers Ball grid array packages for semiconductor die include a thermally conductive container and a substrate that substantially enclose a semiconductor die. The die is positioned with respect to the container by thermally conductive supports formed in the container or at... | 07/15/2008 |
| 7369583 | Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the... | 05/06/2008 |
| 7355785 | Gain-clamped semiconductor optical amplifier A gain-clamped semiconductor optical amplifier is disclosed. The amplifier includes a gain waveguide for amplifying an optical signal input to the gain waveguide, and a grating layer, in contact with the gain waveguide, having a first grating disposed at a first end... | 04/08/2008 |
| 7344905 | Spatial bandgap modifications and energy shift of semiconductor structures Semiconductor substrate is disclosed having quantum wells having first bandgap, and quantum wells having second bandgap less than second bandgap. Semiconductor structure is disclosed comprising substrate having quantum wells having given bandgap, other quantum wells... | 03/18/2008 |
| 7339965 | Optoelectronic device based on an antiwaveguiding cavity A semiconductor optoelectronic device includes at least one cavity and one multilayered interference reflector. The cavity is designed preferably to possess properties of an antiwaveguiding cavity, where no optical modes propagate in the lateral plane. The existing ... | 03/04/2008 |
| 7333689 | Photonic integrated devices having reduced absorption loss An asymmetric twin waveguide (ATG) structure with quantum-well intermixing in the taper region of the active waveguide is disclosed. The structure comprises a first waveguide, a second waveguide, and a taper formed in the second waveguide. The taper has an intermixe... | 02/19/2008 |
| 7294803 | Key pad and keypad assembly A keypad includes a light guide panel, the interior of which light propagates through; at least one key button positioned on the upper surface of the light guide panel; and at least one reflective pattern fixedly positioned with respect to the light guide panel to r... | 11/13/2007 |
| 7211458 | Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices A method of fabricating a semiconductor device includes forming a strained first semiconductor layer on an insulating layer that is between second semiconductor layers. The strained first semiconductor layer may be epitaxially grown from the second semiconductor lay... | 05/01/2007 |
| 7205184 | Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same... | 04/17/2007 |
| 7151004 | Method of fabricating semiconductor laser In fabricating a semiconductor laser producing light with a wavelength of 770 to 810 nm, impurities are introduced into an MQW active layer near a light emitting facet of the laser to form a disordered region constituting a window layer. Pump light is applied to the... | 12/19/2006 |
| 7141478 | Multi-stage EPI process for forming semiconductor devices, and resulting device The present invention is generally directed to a multi-stage epi process for forming semiconductor devices, and the resulting device. In one illustrative embodiment, the method comprises forming a first layer of epitaxial silicon above a surface of a semiconducting ... | 11/28/2006 |
| 7126052 | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of ... | 10/24/2006 |
| 7075954 | Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors A wavelength division multiplexing system based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors is disclosed. The system allows self-adjusting of the resonance wavelength of the wavelength tunable photodetectors to the wavelengt... | 07/11/2006 |
| 7067846 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 06/27/2006 |
| 7049157 | Calibration standard for critical dimension verification of sub-tenth micron integrated circuit technology A critical dimension control wafer for calibrating process control scanning electron microscopes is described. The test wafer provides one or more test structures each consisting of an array of parallel trenches precision micro-machined in a metal plate. The trenche... | 05/23/2006 |
| 7037743 | Semiconductor device and method for producing the same A semiconductor laser device is provided that includes a first conductivity type semiconductor substrate, a first conductivity type cladding layer provided on the semiconductor substrate and an active layer provided on the cladding layer. The active layer has a supe... | 05/02/2006 |
| 7031360 | Tilted cavity semiconductor laser (TCSL) and method of making same A novel class of semiconductor lasers, or “tilted cavity lasers” includes at least one active element with an active region generating an optical gain by injection of a current and mirrors. The active element is placed into a cavity. The cavity is designed such ... | 04/18/2006 |
| 7005681 | Radiation-emitting semiconductor component and method for making same A radiation-emitting semiconductor component having a semiconductor body (1), which has a radiation-generating active layer (9) and a p-conducting contact layer (2), which contains InGaN or AlInGaN and to which a contact metalization (3) ... | 02/28/2006 |
| 6996149 | Semiconductor laser device and semiconductor laser module In a semiconductor laser device having a GRIN-SCH-MQW structure, attention is paid to correlation among a lasing wavelength, a refractive index difference between an equivalent refractive index in a region including an active layer and an equivalent refractive index... | 02/07/2006 |
| 6996148 | Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making same A semiconductor laser having a low beam divergence is disclosed. The laser includes at least one waveguide comprising an active layer generating an optical gain by injection of a current, a photonic band gap crystal having the refractive index modulation in the dire... | 02/07/2006 |
| 6989286 | Method of manufacturing optical devices and related improvements There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circ... | 01/24/2006 |
| 6984538 | Method for quantum well intermixing using pre-annealing enhanced defects diffusion A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions into a quantum well structure a... | 01/10/2006 |
| 6953740 | Highly doped III-nitride semiconductors A wide bandgap semiconductor material is heavily doped to a degenerate level. Impurity densities approaching 1% of the volume of the semiconductor crystal are obtained to greatly increase conductivity. In one embodiment, a layer of AlGaN is formed on a wafer by firs... | 10/11/2005 |
| 6947311 | Two-dimensional structural transition controlled by an electric field, memory storage device thereof, and method of making a memory storage device This invention relates to the controlled two-dimensional structural transition of a dipole monolayer at a metal, semi-conducting or insulating interface. The dipole monolayer consists of objects/molecules with a permanent electric dipole moment. A transition between... | 09/20/2005 |
| 6936488 | Homoepitaxial gallium-nitride-based light emitting device and method for producing A light emitting device comprised of a light emitting semiconductor active region disposed on a substrate comprised of GaN having a dislocation density less than 105 per cm2 is provided. ... | 08/30/2005 |
| 6920167 | Semiconductor laser device and method for fabricating thereof A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured port... | 07/19/2005 |
| 6909734 | High-power, manufacturable sampled grating distributed Bragg reflector lasers A tunable laser is disclosed including a gain section for creating a light beam over a bandwidth, a phase section for controlling the light beam around a center frequency of the bandwidth, a waveguide for guiding and reflecting the light beam in a cavity including a... | 06/21/2005 |
| 6904068 | Semiconductor laser device and multiple wavelength laser light emitting apparatus employing the semiconductor laser device To provide a semiconductor laser device that is capable of outputting high power laser light and is suitable for optical recording, optical communication, welding, and the like, and a multiple wavelength laser light emitting apparatus employing the semiconductor las... | 06/07/2005 |
| 6881601 | Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same A nitride compound semiconductor light-emitting device having a stack of layers including an active layer for a light emitting device and a method of manufacturing the device is disclosed. The method includes the steps of growing a first layer on a substrate at a fi... | 04/19/2005 |
| 6878562 | Method for shifting the bandgap energy of a quantum well layer A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) ... | 04/12/2005 |
| 6806114 | Broadly tunable distributed bragg reflector structure processing A process for creating a broadly tunable Distributed Bragg Reflector (DBR) with a reduced recombination rate. According to the current invention, this may be achieved by creating electron confinement regions and hole confinement regions in the waveguide of the DBR. ... | 10/19/2004 |
| 6750158 | Method for producing a semiconductor device A first semiconductor layer is formed on a mother substrate, and the mother substrate is irradiated with irradiation light from a surface opposite to the first semiconductor layer, so that a thermally decomposed layer formed by thermally decomposing the first semico... | 06/15/2004 |
| 6727109 | Method of fabricating long wavelength vertical-cavity surface-emitting lasers The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting... | 04/27/2004 |
| 6720196 | Nitride-based semiconductor element and method of forming nitride-based semiconductor A thin nitride-based semiconductor layer having a low dislocation density is formed by laterally growing a nitride-based semiconductor layer on the upper surface of an underlayer and forming quantum dots on the laterally grown nitride-based semiconductor layer. The ... | 04/13/2004 |
| 6716655 | Group III nitride compound semiconductor element and method for producing the same An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed fro... | 04/06/2004 |
| 6716654 | Light-emitting diode with enhanced brightness and method for fabricating the same The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers insid... | 04/06/2004 |
| 6689626 | Flexible substrate The invention relates to a substrate comprising a glass sheet (1) having a thickness which is smaller than or equal to 0.1 mm, the glass sheet (1) being provided with a layer of a synthetic resin material (2) having a thickness which is smaller than or eq... | 02/10/2004 |
| 6653248 | Doped semiconductor material, a method of manufacturing the doped semiconductor material, and a semiconductor device A semiconductor layer is co-doped with two dopants. The first dopant is to generate charge carriers in the semiconductor material, and the second dopant is to promote atomic disorder within the material. When the semiconductor material is annealed, the se... | 11/25/2003 |
