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Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.

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Class 438/352 - Fusion or solidification of semiconductor region


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a bipolar transistor having a step of
No. of patents: 9
Last issue date: 08/28/2007


NumberTitleIssue Date
7262617Method for testing integrated circuit, and wafer
A method for manufacturing an integrated circuit, a measurement apparatus of an integrated circuit, and a wafer that reduces damages inflicted on bonding pads while enabling a probe test to be accurately performed. A sensor cell is arranged on a wafer between chip f...
08/28/2007
7012319System for integrating a circuit on an isolation layer and method thereof
A method for integrating a system on an isolation layer. A first isolation substrate including a first circuit deposition region and a first substrate-combining region, and a second isolation substrate including a second circuit deposition region and a second substr...
03/14/2006
6893933Bipolar transistors with low-resistance emitter contacts
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching spe...
05/17/2005
6815303Bipolar transistors with low-resistance emitter contacts
Many integrated circuits include a type of transistor known as a bipolar junction transistor, which has an emitter contact formed of polysilicon. Unfortunately, polysilicon has a relatively high electrical resistance that poses an obstacle to improving switching spe...
11/09/2004
6432791Integrated circuit capacitor and method
Capacitors for integrated circuits with a common polysilicon layer for both MOS gates (274, 276, 278) and capacitor (270) lower plates but with implanted doping for the gates and masked diffusive doping for the capacitor plates....
08/13/2002
6025243Method for preparing a semiconductor device
A deposited film formation method comprises the steps of: (a) feeding a gas of an organometallic compound containing molybdenum atom and hydrogen gas onto a substrate having an electron donative surface; and (b) maintaining the temperature of the electron donative ...
02/15/2000
4609414Emitter finger structure in a switching transistor
A particular emitter finger structure in an NPN type switching transistor. The emitter zone is divided into two lateral N type strips. In the central part are provided, on the one hand, a diffusion of N type dopants whose junction depth is small and, on t...
09/02/1986
4542580Method of fabricating n-type silicon regions and associated contacts
Disclosed are improved bipolar and field effect transistors having n-type silicon regions and associated electrical contacts comprising monocrystalline silicon doped with arsenic and phosphorus. The transistors are fabricated by depositing on a silicon su...
09/24/1985
4364778Formation of multilayer dopant distributions in a semiconductor
A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a...
12/21/1982
 
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