Class 438/347 - Permeable or metal base

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making a bipolar transistor wherein the base
No. of patents: 34
Last issue date: 01/24/2012

Number	Title	Issue Date
8101492	Method for making semiconductor device One or more embodiments relate to a method of forming a semiconductor device, including: providing a substrate; forming a gate stack over the substrate, the gate stack including a control gate over a charge storage layer; forming a conductive layer over the gate sta...	01/24/2012
RE42955	GaN-based permeable base transistor and method of fabrication An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same. ...	11/22/2011
7413958	GaN-based permeable base transistor and method of fabrication An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same. ...	08/19/2008
7295030	Thin film transistor tester and corresponding test method To test electrical characteristics of a Thin Film Transistor (TFT) with a source or drain terminal left open and exposed, using a non-contact current source and protecting the TFTs from adverse effects, such as contamination, destruction, and the like. A tester 1...	11/13/2007
7135369	Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c...	11/14/2006
7056806	Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure....	06/06/2006
6930013	Method of forming a capacitor of an integrated circuit device A method of forming a capacitor having a lower electrode, an upper electrode, and a dielectric layer of an integrated circuit device is provided. A metal compound is adsorbed on the lower electrode by using a gaseous metal compound. A physisorbed metal compound on t...	08/16/2005
6908639	Mixed composition interface layer and method of forming An interface forming method includes forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different ...	06/21/2005
6589823	Silicon-on-insulator (SOI)electrostatic discharge (ESD) protection device with backside contact plug An electrostatic discharge (ESD) protection device for a silicon-on-insulator (SOI) integrated circuit having a silicon substrate with a buried oxide layer disposed thereon and an active layer disposed on the buried oxide layer having active regions defin...	07/08/2003
6368903	SOI low capacitance body contact An FET device and method of making comprising a first dielectric layer; a substrate layer on the dielectric layer; a channel region of a first conductivity type formed in the substrate layer; a gate formed above the substrate layer over the channel region...	04/09/2002
6153488	Method for producing semiconductor device, and semiconductor device produced by same A method for producing a semiconductor device including a bipolar transistor, has the steps of: forming an element isolating region in a major surface of a semiconductor substrate to define an element forming region to form a collector region in the eleme...	11/28/2000
6025243	Method for preparing a semiconductor device A deposited film formation method comprises the steps of: (a) feeding a gas of an organometallic compound containing molybdenum atom and hydrogen gas onto a substrate having an electron donative surface; and (b) maintaining the temperature of the electron donative ...	02/15/2000
5814548	Process for making n-channel or p-channel permeable base transistor with a plurality layers A method for producing an electronic component with a plurality of layers fabricating in a laminated composite, comprising laterally structuring at least one of the layers having a p or n conductivity characteristic by forming one of the layers in a sieve...	09/29/1998
5405789	Method of manufacturing a semiconductor device whereby a laterally bounded semiconductor zone is formed in a semiconductor body in a self-aligning manner A method of manufacturing a semiconductor device with a semiconductor element which includes a semiconductor zone (19) situated below an electrode (18) and adjoining a surface (5) of a semiconductor body (1), which semiconductor zone substantially does no...	04/11/1995
5296390	Method for fabricating a semiconductor device having a vertical channel of carriers A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base lay...	03/22/1994
5290715	Method of making dielectrically isolated metal base transistors and permeable base transistors The invention is directed to method for making a dielectrically isolated metal base transistors and permeable base transistors. The first step is the production of a silicon/metal silicide/silicon heterostructure. Thereafter the surface of the heterostruc...	03/01/1994
5264381	Method of manufacturing a static induction type switching device In a static induction type switching device having gate regions buried in a semiconductor substrate, the gate regions are formed by polysilicon layers and diffusion layers which can be formed by diffusion from the polysilicon layers serving as diffusion s...	11/23/1993
5168070	Electronic component, especially a permeable base transistor An electronic component especially a permeable base transister is provided as a composite of homoepitaxially grown layers so that space-charge zones defined by the permeable base are formed as pn-junctions between an n-conducting layer and a p-conducting ...	12/01/1992
5143859	Method of manufacturing a static induction type switching device In a static induction type switching device having gate regions buried in a semiconductor substrate, the gate regions are formed by polysilicon layers and diffusion layers which can be formed by diffusion from the polysilicon layers serving as diffusion s...	09/01/1992
5106778	Vertical transistor device fabricated with semiconductor regrowth A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown durin...	04/21/1992
5032538	Semiconductor embedded layer technology utilizing selective epitaxial growth methods A permeable base transistor (30) including a metal base layer (34) embedded in a semiconductor crystal (32) to separate collector (38) and emitter (40) regions and form a Schottky barrier with each is disclosed. The metal base layer has at least one openi...	07/16/1991
5017517	Method of fabricating semiconductor device using an Sb protection layer A method for fabricating a semiconductor device comprises the steps of forming the first semiconductor layer on a semiconductor substrate, forming a surface protection layer of antimony (Sb) or the material having Sb as its main component, executing the o...	05/21/1991
5010037	Pinhole-free growth of epitaxial CoSi₂ film on Si(111) Pinhole-free epitaxial CoSi2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) r...	04/23/1991
4903089	Vertical transistor device fabricated with semiconductor regrowth A vertical transistor device is characterized by active regions vertically separated by a narrower control region. The control region is defined by conducting layer extensions which extend into a groove within which semiconductor material is regrown durin...	02/20/1990
4901121	Semiconductor device comprising a perforated metal silicide layer A method for producing, without etching, a perforated layer of epitaxial metal silicide, especially CoSi2, on a single crystal Si substrate, with epitaxial Si overlying the silicide layer. The layer thickness, and the number and size of the ope...	02/13/1990
4837174	Method for producing thin conductive and semi-conductive layers in mono-crystal silicon A method for producing thin conductive or semiconductive layers embedded in silicon in the manufacture of structures for integrated circuits and the like. The invention is characterized by implanting metal atoms (14) in a silicon substrate (15) to a pre-d...	06/06/1989
4758534	Process for producing porous refractory metal layers embedded in semiconductor devices A process for fabricating a semiconductor-metal-semiconductor electronic device and the device formed thereby from a semiconductor substrate is described. The substrate forms a first active region of the device. A porous layer of conductive material is de...	07/19/1988
4748132	Micro fabrication process for semiconductor structure using coherent electron beams As a process for fabricating uniform patterns fine enough to produce a quantum size effect, the use of electron halography is proposed. Disclosed examples employing a process are methods of manufacturing a semiconductors laser whose threshold current is a...	05/31/1988
4735918	Vertical channel field effect transistor A semiconductor device component, and process for preparation thereof, wherein current flowing in a vertical channel of semiconductor material is controlled by metallic gates laterally disposed on either side of the channel. Insulator layers are positione...	04/05/1988
4728616	Ballistic heterojunction bipolar transistor A heterojunction transistor doped to form a specially-shaped emitter-base conduction band step or spike is disclosed. The potential barrier is then utilized to accelerate electrons across the base region at the maximum velocity obtainable without scatteri...	03/01/1988
4707197	Method of producing a silicide/Si heteroepitaxial structure, and articles produced by the method Described is a method for producing metal silicide/silicon heterostructures. The method comprises depositing a very thin Si "template" layer on a relatively cold (	11/17/1987
4510016	Method of fabricating submicron silicon structures such as permeable base transistors Submicron silicon structures are fabricated by repeat oxidation and stripping the walls of a U-groove leaving thin silicon fingers. This method may be used to fabricate a silicon transistor having an emitter and a collector separated by a channel. The channel ...	04/09/1985
4492971	Metal silicide-silicon heterostructures Described are semiconductor heterostructures incorporating a metal layer. Devices based on the heterostructures are described, as are techniques for preparing the heterostructures. Specific embodiments wherein the metal layer is a metal silicide are detai...	01/08/1985
4378629	Semiconductor embedded layer technology including permeable base transistor, fabrication method A layer of material such as the metal base of a transistor is embedded in single crystal. A layer of the material with small, uniformly dimensioned and uniformly spaced openings is formed on a single crystal substrate, and the single crystal is grown from...	04/05/1983

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Class 438/347 - Permeable or metal base