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| Number | Title | Issue Date |
| 8114749 | Method of fabricating high voltage device A device for protecting a semiconductor device from electrostatic discharge may include a high voltage first conductivity type well formed in a semiconductor substrate. A first stack region may have a first conductivity type drift region, and a first conductivity ty... | 02/14/2012 |
| 8080460 | Methods of forming diodes Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed a... | 12/20/2011 |
| 7935605 | Lateral resurf NPN with high holding voltage for ESD applications In an ESD protection circuit an NPN BJT snapback device is provided with high breakdown voltage by including a RESURF region or by forming a PIN diode in the BJT. Holding voltage is increased by forming a sub-collector sinker region with the desired configuration. | 05/03/2011 |
| 7560355 | Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same A method is provided of making a semiconductor wafer for a semiconductor junction diode device having a target forward voltage drop and a target reverse breakdown voltage. The method begins by doping a semiconductor substrate of a first conductivity type through the... | 07/14/2009 |
| 7521329 | Semiconductor light emitting diode having textured structure and method of manufacturing the same A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconduc... | 04/21/2009 |
| 7476593 | Semiconductor device and method of forming the same In one embodiment, semiconductor device 10 comprises a diode which uses isolation regions (34, 16, and 13) and a plurality of dopant concentrations (30, 20, 24, and 26) which may be used to limit the parasitic current that is injec... | 01/13/2009 |
| 7446010 | Metal/semiconductor/metal (MSM) back-to-back Schottky diode A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold vo... | 11/04/2008 |
| 7442602 | Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each other Integrated circuit devices are provided having a vertical diode therein. The devices include an integrated circuit substrate and an insulating layer on the integrated circuit substrate. A contact hole penetrates the insulating layer. A vertical diode is in a lower r... | 10/28/2008 |
| 7419868 | Gated diode nonvolatile memory process A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Various embodiments may include or exclude a diffusion barrier structure between the diode nodes. Example embodiments include the indiv... | 09/02/2008 |
| 7410860 | Method of manufacturing lateral MOSFET structure of an integrated circuit having separated device regions Apparatus and Methods for the self-alignment of separated regions in a lateral MOSFET of an integrate circuit. In one embodiment, a method comprising, forming a relatively thin dielectric layer on a surface of a substrate. Forming a first region of relatively thick ... | 08/12/2008 |
| 7344952 | Laminating encapsulant film containing phosphor over LEDs A process is described for wavelength conversion of LED light using phosphors. LED dies are tested for correlated color temperature (CCT), and binned according to their color emission. The LEDs in a single bin are mounted on a single submount to form an array of LED... | 03/18/2008 |
| 7339254 | SOI substrate for integration of opto-electronics with SiGe BiCMOS According to an exemplary embodiment, a structure includes a silicon-on-insulator substrate including a buried oxide layer situated over a bulk silicon substrate and a silicon layer situated over the buried oxide layer. The structure further includes a trench formed... | 03/04/2008 |
| 7338848 | Method for opto-electronic integration on a SOI substrate and related structure According to an exemplary embodiment, a method includes providing a silicon-on-insulator substrate including a buried oxide layer situated over a bulk silicon substrate and a silicon layer situated over the buried oxide layer. A trench is formed in the silicon layer... | 03/04/2008 |
| 7327008 | Structure and method for mixed-substrate SIMOX technology The present invention provides a semiconductor structure that includes a substrate having a crystal lattice; a first structure formed in a first region of the substrate, the first structure includes at least a heterostructure that generates a lattice stress in said ... | 02/05/2008 |
| 7324735 | Image processing An image data processing system is configured to store image data with redundant protection in the form of a redundant array of inexpensive disks (RAID). An input card is configured to receive an input stream of real-time digital video data, possibly provided by a v... | 01/29/2008 |
| 7289573 | Modulator/transmitter apparatus and method Method and apparatus for providing an amplified modulated radio frequency signal, the method comprising the steps of providing a radio frequency (RF) oscillatory signal, generating from the RF oscillatory signal and an input signal a pair of phase modulated phase co... | 10/30/2007 |
| 7282430 | Melt-based patterning for electronic devices The present invention provides methods and apparatus for melt-based patterning for electronic devices. It employs and provides processes and apparatus for fabricating an electronic device having a pattern formed on a surface by a deposition material. Further, the in... | 10/16/2007 |
| 7279390 | Schottky diode and method of manufacture A Schottky diode capable of sustaining a breakdown voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer disposed on a semiconductor substrate has a thickness of at least about 15 micrometers and an impurity concentration rangi... | 10/09/2007 |
| 7271070 | Method for producing transistors The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is de... | 09/18/2007 |
| 7271403 | Isolating phase change memory devices A phase change memory may be made using an isolation diode in the form of a Schottky diode between a memory cell and a word line. The use of Schottky diode isolation devices may make the memory more scaleable in some embodiments. ... | 09/18/2007 |
| 7265452 | System and method for increasing the strength of a bond made by a small diameter wire in ball bonding A system and method is disclosed for increasing the strength of a bond made by a small diameter wire in ball bonding. In one embodiment of the invention a structure for receiving a ball bond comprises substrate material that has portions that form a substrate cavity... | 09/04/2007 |
| 7250668 | Integrated circuit including power diode A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fab... | 07/31/2007 |
| 7244646 | Pixel design to improve photodiode capacitance and method of forming same A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacen... | 07/17/2007 |
| 7223668 | Method of etching metallic thin film on thin film resistor An Al film is formed on a barrier metal covering a thin film resistor to have a first opening. A photo-resist is formed on the Al film and in the opening, and is patterned to have a second opening having an opening area smaller than that of the first opening and ope... | 05/29/2007 |
| 7221081 | Cathode ray tube having specific panel dimensions The present invention relates to a color cathode ray tube and more specifically to a color cathode ray tube in which mechanical stress due to internal pressure made by evacuation is decreased. According to an aspect of the present invention, a cathode ray tube compr... | 05/22/2007 |
| 7205641 | Polydiode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 04/17/2007 |
| 7199402 | Semiconductor devices The present invention provides a semiconductor device embracing (a) a first semiconductor region defined by a first end surface, a second end surface opposing to the first end surface and a side boundary surface connecting the first and second end surfaces; (b) a se... | 04/03/2007 |
| 7192826 | Semiconductor device and process for fabrication thereof Disclosed is a semiconductor device in which the capacitive element of MIMC structure has a low parasitic capacity. A process for fabrication of said semiconductor device. The semiconductor device has a capacitive element of MIMC structure, a PN photodiode, and a ve... | 03/20/2007 |
| 7189610 | Semiconductor diode and method therefor In one embodiment, a diode is formed with anodes on two surfaces of a semiconductor substrate. ... | 03/13/2007 |
| 7187056 | Radiation hardened bipolar junction transistor A method of forming bipolar junction devices, including forming a mask to expose the total surface of the emitter region and adjoining portions of the surface of the base region. A first dielectric layer is formed over the exposed surfaces. A field plate layer is fo... | 03/06/2007 |
| 7186611 | High-density germanium-on-insulator photodiode array A high-density Germanium (Ge)-on-Insulator (GOI) photodiode array and corresponding fabrication method are provided. The method includes: forming an array of pixel driver nMOST devices, each device having a gate connected to a row line in a first orientation, a firs... | 03/06/2007 |
| 7169688 | Method and apparatus for cutting devices from substrates A method and system for cutting a wafer comprising a semiconductor substrate attached to an array of integrated devices includes placing the wafer on a stage such as a movable X-Y stage including a vacuum chuck having a porous mounting surface, and securing the wafe... | 01/30/2007 |
| 7170103 | Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the dio... | 01/30/2007 |
| 7132729 | Semiconductor device and method of manufacturing same The present invention provides a semiconductor device formed with a diode array together with bipolar transistors, which is capable of preventing the occurrence of crystal defects developed in cross patterns in deep trench regions and improving device yields, and a ... | 11/07/2006 |
| 7122418 | Method of fabricating organic light emitting diode device A method of fabricating an organic electroluminescent device. A substrate comprising an organic electroluminescent unit thereon is provided. A passivation layer is formed on the substrate to cover the organic electroluminescent layer. An ion beam is provided to perf... | 10/17/2006 |
| 7102416 | High side switching circuit A high side switching circuit, comprising: a switching transistor; a charge pump drive circuit including a circuit for generating an oscillating signal; and a charge pump arranged to provide a gate drive voltage to the switching transistor in response to a control s... | 09/05/2006 |
| 7101739 | Method for forming a schottky diode on a silicon carbide substrate A method for manufacturing a vertical Schottky diode with a guard ring on a lightly-doped N-type silicon carbide layer, including forming a P-type epitaxial layer on the N-type layer; implanting N-type dopants in areas of the P-type epitaxial layer to neutralize in ... | 09/05/2006 |
| 7098521 | Reduced guard ring in schottky barrier diode structure Schottky barrier diodes use a dielectric separation region to bound an active region. The dielectric separation region permits the elimination of a guard ring in at least one dimension. Further, using a dielectric separation region in an active portion of the integr... | 08/29/2006 |
| 7095095 | Semiconductor constructions The invention includes a semiconductor construction. The construction has a semiconductor material die with a front surface, a back surface in opposing relation to the front surface, and a thickness of less than 400 microns between the front and back surfaces. The c... | 08/22/2006 |
| 7082838 | Extraordinary piezoconductance in inhomogeneous semiconductors Extraordinary piezoconductance, or change in conductance with strain or pressure, is observed in a hybrid metal-semiconductor device formed from a semiconductor thin film and an adjacent metal shunt fabricated on a semi-insulating substrate. The device includes elec... | 08/01/2006 |
