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| Number | Title | Issue Date |
| 8008102 | Method of forming light emitting devices comprising semiconducting single walled carbon nanotubes The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs... | 08/30/2011 |
| 7977129 | Method for manufacturing semiconductor optical device A method for manufacturing a semiconductor optical device having an optical grating, includes the steps of: forming a semiconductor layer, an insulating layer and a first resin layer not containing silicon (Si); forming a second resin layer containing silicon (Si) o... | 07/12/2011 |
| 7972883 | Method of manufacturing photoelectric device In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a conca... | 07/05/2011 |
| 7855093 | Semiconductor laser device and method of manufacturing the same A method of manufacturing semiconductor laser device capable of reducing ÎșL, with manufacturing restrictions satisfied, is provided. In a distributed-feedback or distributed-reflective semiconductor laser device, immediately before burying regrowth of a diffraction... | 12/21/2010 |
| 7816160 | Manufacturing method for semiconductor device The present invention includes forming an optical guide layer on a substrate, forming a cap layer on the optical guide layer, and forming openings in parts of the optical guide layer and the cap layer to form a diffraction grating from part of the optical guide laye... | 10/19/2010 |
| 7781244 | Method of manufacturing nitride-composite semiconductor laser element, with disclocation control A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is f... | 08/24/2010 |
| 7776634 | Semiconductor laser with a weakly coupled grating A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arrang... | 08/17/2010 |
| 7763484 | Method to form an optical grating and to form a distributed feedback laser diode with the optical grating A method for forming a grating with an adjustable pitch and a method for forming a DFB-LD with an optical grating whose pitch is adjustable during the process are disclosed. The method of the invention; first prepares a mold with a pattern to form the grating; secon... | 07/27/2010 |
| 7723138 | Method of fabricating a semiconductor optical device A method of fabricating a semiconductor optical device is disclosed. This semiconductor optical device includes first and second optical semiconductor elements. This method comprises the steps of: growing, in a metal-organic vapor phase deposition reactor, plural se... | 05/25/2010 |
| 7718455 | Method of forming a buried aperture nitride light emitting device A method of forming a buried aperture in a nitride light emitting device is described. The method involves forming an aperture layer, typically an amorphous or polycrystalline material over an active layer that includes a nitride material. The aperture layer materia... | 05/18/2010 |
| 7666694 | Method for manufacturing semiconductor laser device and semiconductor laser device An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, s... | 02/23/2010 |
| 7645624 | Method for self bonding epitaxy A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom sur... | 01/12/2010 |
| 7632695 | Semiconductor device manufacturing method A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate.... | 12/15/2009 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7432118 | Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The ... | 10/07/2008 |
| 7407889 | Method of manufacturing article having uneven surface The present invention improves a method of forming a surface unevenness using a difference in etching rates, and relaxes limitations on substrates in this method. In a method of the present invention, an uneven surface is formed by a method including applying pressu... | 08/05/2008 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semico... | 07/08/2008 |
| 7381581 | Method for manufacturing vertical cavity surface emitting laser and multiple wavelength surface emitting laser, vertical cavity surface emitting laser, multiple wavelength surface emitting laser, and optical communication system A method for manufacturing a vertical cavity surface emitting laser formed by laminating a plurality of layers on a substrate, includes coupling two layers of the plurality of layers by joining at room temperature or joining while heating. ... | 06/03/2008 |
| 7376305 | Echelle gratings with low Polarization Dependent Loss (PDL) using metal coating on the reflecting facets only An Echelle grating has alternate first (1a) and second (1b) sets of facets (1). The first set of facets (1a) is operative to reflect incident light (4) for diffraction and the second set of facets (1b... | 05/20/2008 |
| 7372052 | Electron beam method and apparatus for reducing or patterning the birefringence of halogenated optical materials A controlled electron beam and heat will decrease the birefringence of a halogenated optical material under tensile stress. The electron beam and heat irradiation will occur in a chamber under near vacuum conditions. After electron beam irradiation and heating, the ... | 05/13/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7348195 | Semiconductor light-emitting device and method for fabricating the device An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that... | 03/25/2008 |
| 7349101 | Lithographic apparatus, overlay detector, device manufacturing method, and device manufactured thereby A device according to one embodiment of the invention may be applied to measure the overlay (e.g. as a machine performance number) quickly and over an expanded range of locations (possibly everywhere) on a wafer. One method using such a device includes measuring the... | 03/25/2008 |
| 7345298 | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more patterned layers formed on the buffer layer and one or more active layers formed on or between the patterned layers, for instance by Lateral... | 03/18/2008 |
| 7341882 | Method for forming an opto-electronic device A method for forming an opto-electronic device through low temperature processes is provided. An active layer is bonded to a substrate by a common adhesive to maintain or increase the luminous efficiency of the opto-electronic because the electric conductive element... | 03/11/2008 |
| 7338825 | Structure for optical device and method of fabricating the same Provided are a structure for an optical device and method of fabricating the same. The structure includes: a light scattering layer producing nanoparticles due to externally provided thermal energy; a protective layer protecting the light scattering layer; and a cap... | 03/04/2008 |
| 7332746 | Light-emitting apparatus A novel configuration of a light-emitting apparatus that can emit white light, in which a primary light source composed of a group III nitride compound semiconductor is used in combination with a secondary light source including a fluorescent material which emits li... | 02/19/2008 |
| 7329569 | Methods of forming semiconductor devices including mesa structures and multiple passivation layers A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A f... | 02/12/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7305018 | Surface-emitting semiconductor laser array and optical transmission system using the same A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element includes a first semiconductor layer of a first conduction type electr... | 12/04/2007 |
| 7288422 | Photonic integrated device using reverse-mesa structure and method for fabricating the same A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplif... | 10/30/2007 |
| 7288421 | Method for forming an optoelectronic device having an isolation layer Methods are disclosed for forming optoelectronic devices. In one example of such a method, a substrate is provided and a partially conductive bottom mirror formed thereon. An active region is then formed on the bottom mirror, and a top mirror formed on the active re... | 10/30/2007 |
| 7285834 | Process for producing microelectromechanical components and a housed microelectromechanical component A process produces microelectromechanical components from a substrate that has a first side and a second side which is substantially opposite from the first side, and at least the first side has at least one microelectromechanical element. The process includes the s... | 10/23/2007 |
| RE39865 | Method of fabricating Bragg gratings using a silica glass phase grating mask and mask used by same An index grating is imprinted in the core of an optical fiber using a specially designed silica glass phase grating mask. The phase mask is held in close proximity to the optical fiber. Laser irradiation of the phase mask with ultraviolet light at normal incidence i... | 10/02/2007 |
| 7271019 | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator laye... | 09/18/2007 |
| 7268005 | Apparatus and method for stacking laser bars for uniform facet coating An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a ... | 09/11/2007 |
| 7269315 | Apparatus for writing Bragg gratings and reflection unit used in the apparatus Provided is an apparatus for writing Bragg gratings and a reflection unit used in the same capable of readily adjusting an incident angle of light radiated from a light source, in order to write Bragg gratings on a target object such as an optical fiber. In accordan... | 09/11/2007 |
| 7263760 | Method for making a slow-wave ridge waveguide structure A method of fabricating a ridge waveguide filter having a slow-wave structure. The ridge waveguide is formed of a conductive sidewall-from metallic materials and may be in the form of a hollow tube, such as a rectangular hollow tube or a circular hollow tube, for ex... | 09/04/2007 |
| 7266284 | Method for controlling one or more temperature dependent optical properties of a structure and a system and product thereof A method for controlling one or more temperature dependent optical properties of a structure in accordance with embodiments of the present invention includes heating at least a portion of a photonic band-gap structure and oxidizing the portion of the photonic band-g... | 09/04/2007 |
| 7250638 | Method of fabricating vertical structure LEDs A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the in... | 07/31/2007 |
