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...During the Civil War, the Confederacy established its own Patent Office which issued 266 patents, a third of which concerned implements of war.
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| Number | Title | Issue Date |
| 7666694 | Method for manufacturing semiconductor laser device and semiconductor laser device An improved throughput can be presented, since an influence of the deterioration in crystallinity created in the epitaxial layer can be eliminated by a simple and easy method, and a semiconductor laser device having stabilized properties such as threshold current, s... | 02/23/2010 |
| 7645624 | Method for self bonding epitaxy A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom sur... | 01/12/2010 |
| 7632695 | Semiconductor device manufacturing method A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate.... | 12/15/2009 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7432118 | Vertical cavity surface emitting laser having a gain guide aperture interior to an oxide confinement layer A VCSEL with current confinement achieved by an oxide insulating region and by an ion implant region. An annular shaped oxide layer is formed, and a gain guide ion implant is formed. The ion implant gain guide includes a central region having high conductivity. The ... | 10/07/2008 |
| 7407889 | Method of manufacturing article having uneven surface The present invention improves a method of forming a surface unevenness using a difference in etching rates, and relaxes limitations on substrates in this method. In a method of the present invention, an uneven surface is formed by a method including applying pressu... | 08/05/2008 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semico... | 07/08/2008 |
| 7381581 | Method for manufacturing vertical cavity surface emitting laser and multiple wavelength surface emitting laser, vertical cavity surface emitting laser, multiple wavelength surface emitting laser, and optical communication system A method for manufacturing a vertical cavity surface emitting laser formed by laminating a plurality of layers on a substrate, includes coupling two layers of the plurality of layers by joining at room temperature or joining while heating. ... | 06/03/2008 |
| 7376305 | Echelle gratings with low Polarization Dependent Loss (PDL) using metal coating on the reflecting facets only An Echelle grating has alternate first (1a) and second (1b) sets of facets (1). The first set of facets (1a) is operative to reflect incident light (4) for diffraction and the second set of facets (1b... | 05/20/2008 |
| 7372052 | Electron beam method and apparatus for reducing or patterning the birefringence of halogenated optical materials A controlled electron beam and heat will decrease the birefringence of a halogenated optical material under tensile stress. The electron beam and heat irradiation will occur in a chamber under near vacuum conditions. After electron beam irradiation and heating, the ... | 05/13/2008 |
| 7365369 | Nitride semiconductor device A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type co... | 04/29/2008 |
| 7348195 | Semiconductor light-emitting device and method for fabricating the device An n-type AlAs/n-type Al0.5Ga0.5As DBR layer and a p-type (Al0.2Ga0.8)0.5In0.5P/p-type Al0.5In0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that... | 03/25/2008 |
| 7349101 | Lithographic apparatus, overlay detector, device manufacturing method, and device manufactured thereby A device according to one embodiment of the invention may be applied to measure the overlay (e.g. as a machine performance number) quickly and over an expanded range of locations (possibly everywhere) on a wafer. One method using such a device includes measuring the... | 03/25/2008 |
| 7345298 | Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrate A structure using integrated optical elements is comprised of a substrate, a buffer layer grown on the substrate, one or more patterned layers formed on the buffer layer and one or more active layers formed on or between the patterned layers, for instance by Lateral... | 03/18/2008 |
| 7341882 | Method for forming an opto-electronic device A method for forming an opto-electronic device through low temperature processes is provided. An active layer is bonded to a substrate by a common adhesive to maintain or increase the luminous efficiency of the opto-electronic because the electric conductive element... | 03/11/2008 |
| 7338825 | Structure for optical device and method of fabricating the same Provided are a structure for an optical device and method of fabricating the same. The structure includes: a light scattering layer producing nanoparticles due to externally provided thermal energy; a protective layer protecting the light scattering layer; and a cap... | 03/04/2008 |
| 7332746 | Light-emitting apparatus A novel configuration of a light-emitting apparatus that can emit white light, in which a primary light source composed of a group III nitride compound semiconductor is used in combination with a secondary light source including a fluorescent material which emits li... | 02/19/2008 |
| 7329569 | Methods of forming semiconductor devices including mesa structures and multiple passivation layers A method of forming a semiconductor device may include forming a semiconductor structure on a substrate wherein the semiconductor structure defines a mesa having a mesa surface opposite the substrate and mesa sidewalls between the mesa surface and the substrate. A f... | 02/12/2008 |
| 7312474 | Group III nitride based superlattice structures A light emitting diode is provided having a Group III nitride based superlattice and a Group III nitride based active region on the superlattice. The active region has at least one quantum well structure. The quantum well structure includes a first Group III nitride... | 12/25/2007 |
| 7305018 | Surface-emitting semiconductor laser array and optical transmission system using the same A surface emitting semiconductor laser includes a substrate, at least one light-emitting element on the substrate, and at least one protection element on the substrate. The light-emitting element includes a first semiconductor layer of a first conduction type electr... | 12/04/2007 |
| 7288421 | Method for forming an optoelectronic device having an isolation layer Methods are disclosed for forming optoelectronic devices. In one example of such a method, a substrate is provided and a partially conductive bottom mirror formed thereon. An active region is then formed on the bottom mirror, and a top mirror formed on the active re... | 10/30/2007 |
| 7288422 | Photonic integrated device using reverse-mesa structure and method for fabricating the same A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplif... | 10/30/2007 |
| 7285834 | Process for producing microelectromechanical components and a housed microelectromechanical component A process produces microelectromechanical components from a substrate that has a first side and a second side which is substantially opposite from the first side, and at least the first side has at least one microelectromechanical element. The process includes the s... | 10/23/2007 |
| RE39865 | Method of fabricating Bragg gratings using a silica glass phase grating mask and mask used by same An index grating is imprinted in the core of an optical fiber using a specially designed silica glass phase grating mask. The phase mask is held in close proximity to the optical fiber. Laser irradiation of the phase mask with ultraviolet light at normal incidence i... | 10/02/2007 |
| 7271019 | Lateral heat spreading layers for epi-side up ridge waveguide semiconductor lasers Disclosed are a semiconductor device and method of manufacturing the same comprising a substrate, a mesa region adjacent to the substrate, an electroplated metal layer, for reducing the thermal resistance of the device, surrounding the mesa region, an insulator laye... | 09/18/2007 |
| 7268005 | Apparatus and method for stacking laser bars for uniform facet coating An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a ... | 09/11/2007 |
| 7269315 | Apparatus for writing Bragg gratings and reflection unit used in the apparatus Provided is an apparatus for writing Bragg gratings and a reflection unit used in the same capable of readily adjusting an incident angle of light radiated from a light source, in order to write Bragg gratings on a target object such as an optical fiber. In accordan... | 09/11/2007 |
| 7263760 | Method for making a slow-wave ridge waveguide structure A method of fabricating a ridge waveguide filter having a slow-wave structure. The ridge waveguide is formed of a conductive sidewall-from metallic materials and may be in the form of a hollow tube, such as a rectangular hollow tube or a circular hollow tube, for ex... | 09/04/2007 |
| 7266284 | Method for controlling one or more temperature dependent optical properties of a structure and a system and product thereof A method for controlling one or more temperature dependent optical properties of a structure in accordance with embodiments of the present invention includes heating at least a portion of a photonic band-gap structure and oxidizing the portion of the photonic band-g... | 09/04/2007 |
| 7250638 | Method of fabricating vertical structure LEDs A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the in... | 07/31/2007 |
| 7251264 | Distributed bragg reflector for optoelectronic device This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the... | 07/31/2007 |
| 7251262 | Surface emitting semiconductor laser and communication system using the same A surface emitting semiconductor laser includes a laminate of semiconductor layers emitting multimode laser light, and a block member blocking light of a specific mode among the multimode laser light emitted from the laminate. ... | 07/31/2007 |
| 7244957 | Group III nitride compound semiconductor light-emitting device and method for producing the same In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg dopi... | 07/17/2007 |
| 7238424 | All-dielectric optically variable pigments The light transmitted and reflected by all-dielectric optically variable pigments varies according to viewing angle. The color travel of an all-dielectric optically variable pigment depends on amplitude changes and wavelength shifts in reflectance peaks of the pigme... | 07/03/2007 |
| 7228043 | Optical waveguide circuit and manufacturing method thereof An optical waveguide circuit comprising a plurality of first cores (203) arranged at intervals widening as they are away from the branch point or the joining point of optical signal, a clad (205) filling at least these first cores, and second cores ( | 06/05/2007 |
| 7228017 | Fiber optic sensing device and method of making and operating the same A chemical sensing device comprises a fiber core and a fiber cladding. The fiber core comprises an index-modulated grating region having an apodized profile configured for increasing shedding of light into the fiber cladding, and the fiber cladding of the chemical s... | 06/05/2007 |
| 7224882 | Optical materials with selected index-of-refraction Photosensitive optical materials are used for establishing more versatile approaches for optical device formation. In some embodiments, unpatterned light is used to shift the index-of-refraction of planar optical structures to shift the index-of-refraction of the ph... | 05/29/2007 |
| 7221692 | Semiconductor laser device and its manufacturing method A semiconductor laser device comprises: a cladding layer of a first conductivity type; an active layer provided on the cladding layer; and a cladding layer of a second conductivity type provided on the active layer. At least a part of the cladding layer of the secon... | 05/22/2007 |
| 7218660 | Single-mode vertical cavity surface emitting lasers and methods of making the same In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure in... | 05/15/2007 |
| 7215838 | Resistive heater for thermo optic device Resistive heaters formed in two mask counts on a surface of a grating of a thermo optic device thereby eliminating one mask count from prior art manufacturing methods. The resistive heater is comprised of a heater region and a conductive path region formed together ... | 05/08/2007 |