Did You Know...
...that Robert Adler has the dubious distinction of being the Father of the Couch Potato? Back in 1955 Adler was employed by what was then Zenith Radio Corp., where he was charged to invent something that would allow viewers to turn down the TV volume without leaving their chairs. After a series of flops (such as a wired contraption that people tripped over), Adler hit on the idea of using sound waves. Thus the Remote Control was born...
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| Number | Title | Issue Date |
| 8168504 | Integrated circuit comprising a gradually doped bipolar transistor and corresponding fabrication process An integrated circuit includes a bipolar transistor comprising a substrate and a collector formed in the substrate. The collector includes a highly doped lateral zone, a very lightly doped central zone and a lightly doped intermediate zone located between the centra... | 05/01/2012 |
| 8158484 | Method of forming an inverted T shaped channel structure for an inverted T channel field effect transistor device A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a f... | 04/17/2012 |
| 8143134 | Method for manufacturing SOI substrate The present invention provides a method for manufacturing an SOI substrate, to improve planarity of a surface of a single crystal semiconductor layer after separation by favorably separating a single crystal semiconductor substrate even in the case where a non-mass-... | 03/27/2012 |
| 8119490 | Method for manufacturing SOI substrate A semiconductor substrate and a base substrate made from an insulator are prepared; an oxide film containing a chlorine atom is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form an... | 02/21/2012 |
| 8101490 | Method for manufacturing semiconductor device and apparatus for manufacturing same A method for manufacturing a semiconductor device includes: irradiating a growth substrate with laser light to focus the laser light into a prescribed position inside a crystal for a semiconductor device or inside the growth substrate, the crystal for the semiconduc... | 01/24/2012 |
| 8097519 | SOI device having a substrate diode formed by reduced implantation energy By removing material during the formation of trench openings of isolation structures in an SOI device, the subsequent implantation process for defining the well region for a substrate diode may be performed on the basis of moderately low implantation energies, there... | 01/17/2012 |
| 8048754 | Method for manufacturing SOI substrate and method for manufacturing single crystal semiconductor layer An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the ... | 11/01/2011 |
| 8048753 | Charging protection device Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the ... | 11/01/2011 |
| 8039351 | Method of fabricating hetero-junction bipolar transistor (HBT) A method of fabricating a hetero-junction bipolar transistor (HBT) is disclosed, where the HBT has a structure incorporating a hetero-junction bipolar structure disposed on a substrate including of silicon crystalline orientation . The hetero-junction bipolar s... | 10/18/2011 |
| 8026145 | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering A process for the preparation of low resistivity arsenic or phosphorous doped (N+/N++) silicon wafers which, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process, reliably form oxygen precipitates. ... | 09/27/2011 |
| 7981754 | Manufacturing method of bonded SOI substrate and manufacturing method of semiconductor device To provide a manufacturing method of a semiconductor substrate and a manufacturing method of a semiconductor device, which prevent reduction in breakdown voltage of a gate oxide film of a device formed in a semiconductor substrate to improve a reliability of the gat... | 07/19/2011 |
| 7955937 | Method for manufacturing semiconductor device comprising SOI transistors and bulk transistors By forming bulk-like transistors in sensitive RAM areas of otherwise SOI-based CMOS circuits, a significant savings in valuable chip area may be achieved since the RAM areas may be formed on the basis of a bulk transistor configuration, thereby eliminating hysteresi... | 06/07/2011 |
| 7955938 | Wiring technique An apparatus for supplying electrical power to a movable member. The apparatus includes a fixed member, the movable member moving relative to the fixed member, a flexible wiring member having an end connected to the movable member and another end connected to the fi... | 06/07/2011 |
| 7939415 | Method for forming a substrate contact for advanced SOI devices based on a deep trench capacitor configuration By forming a first portion of a substrate contact in an SOI device on the basis of a trench capacitor process, the overall manufacturing process for patterning contact elements may be enhanced since the contacts may only have to extend down to the level of the semic... | 05/10/2011 |
| 7939416 | Method of making bipolar transistor A method of manufacturing a bipolar transistor is compatible with FinFET processing. A collector region (18) is formed and patterned, base contact regions (26) formed on either side, and a gap formed between the base contact region. A base (28),... | 05/10/2011 |
| 7927956 | Method for making a semiconductor structure using silicon germanium A semiconductor substrate having a silicon layer is provided. In one embodiment, the substrate is a silicon-on-insulator (SOI) substrate having an oxide layer underlying the silicon layer. An amorphous or polycrystalline silicon germanium layer is formed overlying t... | 04/19/2011 |
| 7927957 | Method for producing bonded silicon wafer A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment ... | 04/19/2011 |
| 7906403 | Bipolar transistor and method of fabricating the same Consistent with an example embodiment, there is a bipolar transistor with a reduced collector series resistance integrated in a trench of a standard CMOS shallow trench isolation region. The bipolar transistor includes a collector region manufactured in one fabricat... | 03/15/2011 |
| 7892934 | SOI substrate and method for manufacturing SOI substrate On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent i... | 02/22/2011 |
| 7851318 | Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor subst... | 12/14/2010 |
| 7833871 | Laser annealing method and device A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicul... | 11/16/2010 |
| 7820519 | Process of forming an electronic device including a conductive structure extending through a buried insulating layer A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can al... | 10/26/2010 |
| 7799651 | Method of treating interface defects in a substrate The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorg... | 09/21/2010 |
| 7790563 | Semiconductor device, electronic device and method for manufacturing semiconductor device A semiconductor device of the present invention is manufactured by the following steps: forming a single-crystal semiconductor layer over a substrate having an insulating surface; irradiating a region of the single-crystal semiconductor layer with laser light; formi... | 09/07/2010 |
| 7785975 | SOI device with improved storage capacity and method for manufacturing the same An SOI device includes an SOI substrate composed of a stack structure of a silicon substrate, a buried oxide layer, and a silicon layer. Grooves are defined in the silicon layer each exposing the buried oxide layer. A barrier layer is formed on the lower portion of ... | 08/31/2010 |
| 7776703 | Process for manufacturing semiconductor device Reduction of damage to a semiconductor device due to a marking process while inhibiting deterioration of a mark can not be achieved in conventional processes for manufacturing semiconductor devices. A process for manufacturing the semiconductor device 100 inv... | 08/17/2010 |
| 7763518 | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof The present invention provides a “collector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped collector. Instead, the inventive vertical SOI BJT uses a back gate-induced, minority carrier inversion layer as the intrins... | 07/27/2010 |
| 7727846 | Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrat... | 06/01/2010 |
| 7709337 | Method for manufacturing SOI substrate and semiconductor device It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Fu... | 05/04/2010 |
| 7655527 | Semiconductor element and process of manufacturing semiconductor element Shown are embodiments where a process of manufacturing a semiconductor element on a semiconductor wafer is shown. The semiconductor element is obtained by dividing the function-providing semiconductor wafer into functional elements. The function-providing semiconduc... | 02/02/2010 |
| 7618872 | Semiconductor device structures for bipolar junction transistors and methods of fabricating such structures Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure comprises a semiconductor body having a top surface and sidewalls extending from the top sur... | 11/17/2009 |
| 7615456 | Method for manufacturing SOI substrate A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface ... | 11/10/2009 |
| 7601601 | Method for manufacturing semiconductor device An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconduct... | 10/13/2009 |
| 7588991 | Method for fabricating embedded static random access memory The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the semiconductor substrate and defining at least a first conductive devic... | 09/15/2009 |
| 7521328 | Methods of fabricating bipolar transistor with emitter and collector in separate device isolation trenches A bipolar transistor and method of fabricating the same is disclosed. Particularly, a bipolar transistor may have an emitter and a collector diffusion layer in the sidewalls and the bottom of a device isolation trench. A method includes the steps of: forming a devic... | 04/21/2009 |
| 7504311 | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS A method for fabricating a semiconductor substrate includes epitaxially growing an elemental semiconductor layer on a compound semiconductor substrate. An insulating layer is deposited on top of the elemental semiconductor layer, so as to form a first substrate. The... | 03/17/2009 |
| 7504310 | Semiconductors bonded on glass substrates A method includes providing a glass substrate and bonding a semiconductor layer to the glass substrate. The semiconductor layer is formed to a thickness such that it does not yield due to temperature-induced strain at device processing temperatures. ... | 03/17/2009 |
| 7498230 | Magnesium-doped zinc oxide structures and methods Methods of forming transparent conducting oxides and devices formed by these methods are shown. Monolayers that contain zinc and monolayers that contain magnesium are deposited onto a substrate and subsequently processed to form magnesium-doped zinc oxide. The resul... | 03/03/2009 |
| 7498229 | Transistor and in-situ fabrication process A method of fabricating semiconductor components in-situ and in a continuous integrated sequence includes the steps of providing a single crystal semiconductor substrate, epitaxially growing a first layer of rare earth insulator material on the semiconductor substra... | 03/03/2009 |
| 7452781 | Method for manufacturing a semiconductor substrate, method for manufacturing a semiconductor device, and the semiconductor device A method for manufacturing a semiconductor substrate having a silicon-on-insulator (SOI) structure region isolated by a local oxidation of silicon (LOCOS) film and an SOI structure in the region includes forming the LOCOS film so as to make a height from an uppermos... | 11/18/2008 |
