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| Number | Title | Issue Date |
| 8183071 | Method for producing nitride semiconductor optical device and epitaxial wafer In step S106, an InXGa1-XN well layer is grown on a semipolar main surface between times t4 and t5 while a temperature in a growth furnace is maintained at temperature TW. In step S107, immediately after c... | 05/22/2012 |
| 8173459 | Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the ... | 05/08/2012 |
| 8173458 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well struc... | 05/08/2012 |
| 8124431 | Nitride semiconductor laser device and method of producing the same A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an... | 02/28/2012 |
| 8124430 | Method for forming quantum well structure and method for manufacturing semiconductor light emitting element A method for forming a quantum well structure that can reduce the variation in the In composition in the thickness direction of a well layer and a method for manufacturing a semiconductor light emitting element are provided. In a step of forming a quantum well struc... | 02/28/2012 |
| 8071404 | Method for fabricating light emitting device By using a first substrate which has a light-transmitting property and whose first face is provided with a light-absorbing layer, a mixture including an organic compound and an inorganic material is irradiated with light having a wavelength, which is absorbed by the... | 12/06/2011 |
| 8067255 | Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting de... | 11/29/2011 |
| 8058085 | Method of forming a waveguide in diamond N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V cente... | 11/15/2011 |
| 8017419 | All-silicon raman amplifiers and lasers based on micro ring resonators Methods of manufacturing a lasing device are provided by some embodiments, the methods including: creating a silicon micro ring with a predetermined radius and a predetermined first cross-sectional dimension; creating a silicon waveguide with a predetermined second ... | 09/13/2011 |
| 8017420 | Method of forming optical waveguide Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through ... | 09/13/2011 |
| 7981707 | Method for enhancing optical characteristics of multilayer optoelectronic components The method of the invention consists of implanting ions into the surface of multilayer optical waveguides, in the highly doped layer, in a defined pattern so as to modify the refractive index of this layer. ... | 07/19/2011 |
| 7972882 | Microresonator systems and methods of fabricating the same Various embodiments of the present invention are related to microresonator systems and to methods for fabricating the microresonator systems. In one embodiment, a method of fabricating a microresonator system comprises: forming a multilayer system having a bottom la... | 07/05/2011 |
| 7939352 | Selective area metal bonding Si-based laser A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide a... | 05/10/2011 |
| 7923275 | Surface emitting laser and manufacturing method thereof A surface emitting laser includes a lower Bragg reflector, a resonator and an upper Bragg reflector. The resonator is provided on top of the lower Bragg reflector and includes an active layer, a lower semiconductor layer and an upper semiconductor layer. The upper B... | 04/12/2011 |
| 7901966 | Method for manufacturing nitride semiconductor device A method for manufacturing a nitride semiconductor device, comprises: epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epi... | 03/08/2011 |
| 7879635 | Method for manufacturing semiconductor optical device A method for manufacturing a laser diode includes: providing a semiconductor structure in which semiconductor layers are laminated; forming a waveguide ridge in the layers; forming an SiO2 film over the entire surface; forming a second resist pattern cove... | 02/01/2011 |
| 7833812 | Process for forming optical device having electron injection layer comprising barium An optical device comprising an anode, a cathode, an organic semiconducting material between the anode and the cathode, and an electron transport layer between the cathode and the organic semiconducting material wherein the organic semiconducting material comprises ... | 11/16/2010 |
| 7811844 | Method for fabricating electronic and photonic devices on a semiconductor substrate A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a... | 10/12/2010 |
| 7799589 | Optical waveguide apparatus and method for manufacturing the same An optical waveguide apparatus having a very simple structure that can modulate a signal light guided through an optical waveguide is provided. A photoresist 13 is applied to an upper side of an SOI film 12, a photoresist mask 14 is formed, and ... | 09/21/2010 |
| 7799588 | Method of manufacturing the optical device by a stopper to form an oxide block A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected ... | 09/21/2010 |
| 7795058 | Method for manufacturing optical element The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for m... | 09/14/2010 |
| 7785910 | Light emitting device having protrusion and recess structure and method of manufacturing the same The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a f... | 08/31/2010 |
| 7772022 | Method of aligning optical components with waveguides A method of fabricating a photonic device comprises the steps of providing a core pattern of waveguide core material (1) on a base layer (3) and applying a cladding layer (2) over the core material 1 and the base layer (3). The height of ... | 08/10/2010 |
| 7767479 | Quantum photonic imagers and methods of fabrication thereof Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixe... | 08/03/2010 |
| 7741136 | Method of fabricating turning mirror using sacrificial spacer layer and device made therefrom The present invention is a method of fabricating a waveguide using a sacrificial spacer layer. The first step in this process is to fabricate the underlying optical semiconductor structure. A trench is then etched in this structure resulting in an underlying L-shape... | 06/22/2010 |
| 7723137 | Optical device, method of manufacturing the same, optical module, optical transmission system In a conventional optical device which mounts a semiconductor light emitting element, the processing is difficult and a manufacturing process cost is expensive because of the necessity of forming via holes in a substrate. An optical device comprises a laser d... | 05/25/2010 |
| 7700390 | Method for fabricating three-dimensional photonic crystal A method for fabricating a three-dimensional photonic crystal comprises the steps of: forming a dielectric thin film; injecting ions selectively into the dielectric thin film by using a focus ion beam to form a mask on the dielectric thin film; forming a pattern by ... | 04/20/2010 |
| 7700391 | Method of fabricating optical device using multiple sacrificial spacer layers The present invention is a method of fabricating an optical device using multiple sacrificial spacer layers. The first step in this process is to fabricate the underlying base structure and deposit an optical structure thereon. A facet is then created at the ends of... | 04/20/2010 |
| 7687290 | Method for manufacturing semiconductor optical device A method for manufacturing a semiconductor optical device includes: forming a laminated semiconductor structure of GaN-based materials on a semiconductor wafer, the laminated semiconductor structure forming a laser diode of GaN-based materials, including an active l... | 03/30/2010 |
| 7655489 | Monolithically-pumped erbium-doped waveguide amplifiers and lasers Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-dop... | 02/02/2010 |
| 7625771 | Method of reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region A method for reducing insertion loss in a transition region between a plurality of input or output waveguides to a free space coupler region in a photonic integrated circuit (PIC) includes the steps of forming a passivation layer over the waveguides and region and f... | 12/01/2009 |
| 7622315 | Tunable laser source with integrated optical modulator A tunable laser source with integrated optical modulator. The tunable laser source is a widely tunable semiconductor laser that is comprised of an active region on top of a thick, low bandgap, waveguide layer, wherein both the waveguide layer and the active region a... | 11/24/2009 |
| 7615389 | GaN lasers on ALN substrates and methods of fabrication Ga(In)N-based laser structures and related methods of fabrication are proposed where Ga(In)N-based semiconductor laser structures are formed on AlN or GaN substrates in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In... | 11/10/2009 |
| 7611916 | Method of manufacturing semiconductor optical element A method of manufacturing a semiconductor optical element, includes successively stacking a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; applying a resist to the second semic... | 11/03/2009 |
| 7595208 | Method of laser annealing using two wavelengths of radiation A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the... | 09/29/2009 |
| 7588954 | InGaAs/GaAs lasers on silicon produced by LEPECVD and MOCVD Method for making an InGaAs/GaAs quantum well laser (10) on a Silicon substrate (15.1). The method comprises the steps: Formation of a virtual Germanium substrate (15) on the Silicon substrate (15.1) by ... | 09/15/2009 |
| 7585688 | Method for manufacturing semiconductor optical device A method for manufacturing a semiconductor optical device includes: forming a first resist pattern on a top surface of a laminated semiconductor structure; forming channels and a waveguide ridge by dry etching using the first resist pattern as a mask; forming an SiO... | 09/08/2009 |
| 7563628 | Fabrication of optical waveguide devices Disclosed is a method of fabricating an optical waveguide device including the steps of forming a mask over a waveguide core material layer so as to leave a portion of the layer exposed, and exposing the structure to an oxidizing environment to form an oxide layer o... | 07/21/2009 |
| 7553684 | Method of fabricating interferometric devices using lift-off processing techniques Embodiments of the present disclosure include a method of fabricating interferometric devices using lift-off processing techniques. Use of lift-off processing in the fabrication of various layers of interferometric modulators, such as an optical stack or a flex laye... | 06/30/2009 |
| 7544529 | Image sensor packaging structure and method of manufacturing the same An image sensor module includes a first substrate, a second substrate provided over the first substrate, an image sensor device for receiving an image signal flip-chip bonded to the second substrate, and a semiconductor device for processing the image signal from th... | 06/09/2009 |
