Class 438/301 - Source or drain doping

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process having a step for the self-aligned introduction
No. of patents: 1389
Last issue date: 04/17/2012

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Number	Title	Issue Date
8158483	Semiconductor device and its manufacturing method A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon gate electrode and a silicon resistive element, forming side wall space...	04/17/2012
8114748	Shallow extension regions having abrupt extension junctions A method of forming a semiconductor device is provided that includes forming a gate structure atop a substrate and implanting dopants into the substrate to a depth of 10 nm or less from an upper surface of the substrate. In a following step, an anneal is performed w...	02/14/2012
8105910	Method for forming silicide of semiconductor device A silicide forming method for a semiconductor device. A silicide forming method may include forming a gate electrode by depositing a gate oxide film and/or polysilicon over a silicon substrate and patterning. A silicide forming method may include forming a nitride f...	01/31/2012
8101487	Method for fabricating semiconductor devices with shallow diffusion regions A method for fabricating a semiconductor device is presented. The method includes providing a substrate and forming a gate stack over the substrate. A first laser processing to form vacancy rich regions within the substrate on opposing sides of the gate stack is per...	01/24/2012
8097518	Semiconductor device and manufacturing method therefor There is provided a semiconductor device including a semiconductor substrate (10), a high concentration diffusion region (22) formed within the semiconductor substrate (10), a first low concentration diffusion region (24) that has a lower...	01/17/2012
8062949	Nanowire transistor with surrounding gate One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment of the method, a pillar of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy process is performed to crys...	11/22/2011
8048752	Spacer shape engineering for void-free gap-filling process A method of forming a semiconductor device includes providing a semiconductor substrate; forming a gate stack on the semiconductor substrate; forming a gate spacer adjacent to a sidewall of the gate stack; thinning the gate spacer; and forming a secondary gate space...	11/01/2011
7998821	Method of manufacturing complementary metal oxide semiconductor transistor A method of manufacturing a CMOS is disclosed. A substrate has a first gate and a second gate. A dielectric layer and a patterned photo-resist layer are formed sequentially on the substrate. After an etching process, the dielectric layer without the photo-resist lay...	08/16/2011
7906399	Narrow width metal oxide semiconductor transistor Disclosed is a semiconductor transistor for enhancing performance of PMOS and NMOS transistors, particularly current driving performance, while reducing a narrow width effect. A narrow width MOS transistor includes: a channel of which width is W0 and length i...	03/15/2011
7888221	Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions The present invention relates to a Tunnel Field Effect Transistor (TFET), which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The TFET further includes a silicon germanium alloy epitaxial source region with a conductivity...	02/15/2011
7863147	Semiconductor device and fabrication method thereof A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a semiconductor substrate which comprise a first type well and a second type well, and a plurality of junction regions therebetween, wherein each of the junction ...	01/04/2011
7851316	Fabrication method of semiconductor device A fabrication method of a semiconductor device includes: forming a gate insulating film and a gate electrode on an N type well; forming first source/drain regions by implanting a first element in regions of the N type well on both sides of the gate electrode, the fi...	12/14/2010
7851315	Method for fabricating a field effect transistor having a dual thickness gate electrode A field effect transistor and a method of fabricating the field effect transistor. The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation; a source and a drain formed in the body and on opposite sides of...	12/14/2010
7824994	Method of forming memory devices by performing halogen ion implantation and diffusion processes Disclosed is a method of forming memory devices employing halogen ion implantation and diffusion processes. In one illustrative embodiment, the method includes forming a plurality of word line structures above a semiconducting substrate, each of the word line struct...	11/02/2010
7820517	Control of hot carrier injection in a metal-oxide semiconductor device In a metal-oxide semiconductor device including first and second source/drain regions of a first conductivity type formed in a semiconductor layer of a second conductivity type proximate an upper surface of the semiconductor layer, a drift region formed in the semic...	10/26/2010
7816218	Selective deposition of amorphous silicon films on metal gates A microelectronic device includes a metal gate with a metal gate upper surface. The metal gate is disposed in an interlayer dielectric first layer. The interlayer dielectric first layer also has an upper surface that is coplanar with the metal gate upper surface. A ...	10/19/2010
7795100	Semiconductor device and its manufacturing method A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon gate electrode and a silicon resistive element, forming side wall space...	09/14/2010
7785972	Method for fabricating semiconductor MOS device A method of making a transistor device having silicided source/drain is provided. A gate electrode is formed on a substrate with a gate dielectric layer therebetween. A spacer is formed on sidewalls of the gate electrode. A source/drain is implanted into the substra...	08/31/2010
7754572	Semiconductor device and a method of manufacturing thereof A semiconductor device has a semiconductor substrate, a pair of diffusion layers formed in a predetermined regions of the semiconductor substrate, a gate insulation film formed on a region of the semiconductor substrate being interposed between the pair of the diffu...	07/13/2010
7745297	Method of substrate with transparent electrodes and devices incorporating it The substrate with electrodes is formed of a transparent material onto which is deposited a film (1) of a transparent conductive material of thickness e1 and of refractive index n1, said film being structured to form a set of electrodes ...	06/29/2010
7723197	Method of manufacturing semiconductor device and semiconductor device A method of manufacturing a semiconductor device includes implanting an impurity into a crystalline semiconductor film that is formed over a base and includes a first part in contact with the base, a second part and a third part, so that at least the second part and...	05/25/2010
7700450	Method for forming MOS transistor A method for forming a MOS transistor includes providing a substrate having at least a gate structure formed thereon, performing a pre-amorphization (PAI) process to form amorphized regions in the substrate, sequentially performing a co-implantation process, a first...	04/20/2010
7670916	Semiconductor device doped with Sb, Ga, or Bi and method of manufacturing the same A semiconductor memory device includes a first dopant area and a second dopant area in a semiconductor substrate, the first dopant area and the second dopant area doped with one selected from the group consisting of Sb, Ga, and Bi. The semiconductor memory device in...	03/02/2010
7670915	Contact liner in integrated circuit technology A method of forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate. A silicid...	03/02/2010
7638400	Method for fabricating semiconductor device A method for forming a uniform doped region in a substrate having a non-uniform material layer thereon is provided. The non-uniform material layer is removed form the substrate. Thereafter, a treatment process is performed to form an offset material layer on a prede...	12/29/2009
7638401	Memory device with surface-channel peripheral transistors A method of forming a memory device (e.g., a DRAM) including array and peripheral circuitry. A plurality of undoped polysilicon gates 58 are formed. These gates 58 are classed into three groups; namely, first conductivity type peripheral gates 58	12/29/2009
7605043	Semiconductor device and manufacturing method for the same A semiconductor device includes a first diffusion region including germanium atoms and first impurity atoms, provided on a surface layer of a semiconductor substrate, the first impurity atoms contributing to electric conductivity, and a second diffusion region inclu...	10/20/2009
7605042	SOI bottom pre-doping merged e-SiGe for poly height reduction Semiconductor device structures, and methods for making such structures, are described that provide for fully-doped transistor source/drain regions while reducing or even avoiding boron penetration into the transistor channel, thereby improving the performance of th...	10/20/2009
7592232	Method for manufacturing semiconductor device A method for manufacturing a semiconductor device, includes the steps of forming a dummy gate insulating film and a dummy gate electrode, forming source and drain regions, forming a first insulating film, forming a second insulating film, removing the second insulat...	09/22/2009
7588990	Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer tempe...	09/15/2009
7585737	Method of manufacturing double diffused drains in semiconductor devices A method of manufacturing double diffused drains in a semiconductor device. An embodiment comprises forming a gate dielectric layer on a substrate, and masking and patterning the gate dielectric layer. Once the gate dielectric layer has been patterned, a second diel...	09/08/2009
7585738	Method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device A method of forming a fully silicided semiconductor device with independent gate and source/drain doping and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a substrate (the gate stack comprising a polys...	09/08/2009
7550356	Method of fabricating strained-silicon transistors A method of fabricating strained-silicon transistors includes providing a semiconductor substrate, in which the semiconductor substrate includes a gate, at least a spacer, and a source/drain region; performing a first rapid thermal annealing (RTA) process; removing ...	06/23/2009
7521326	Semiconductor device and manufacturing method thereof It is an object of the present invention to provide a semiconductor device superior in the decrease in leak current due to a short-channel effect and a manufacturing method thereof. In a process of forming a field-effect transistor over a single-crystal semiconducto...	04/21/2009
7510943	Semiconductor devices and methods of manufacture thereof A first gate dielectric of a first transistor is disposed over a workpiece in a first region, and a second gate dielectric of a second transistor is disposed over the workpiece in a second region. The second gate dielectric comprises a different material than the fi...	03/31/2009
7479434	Semiconductor device and method of manufacturing the same A semiconductor device includes a gate structure formed on a substrate. The gate structure includes an uppermost first metal silicide layer pattern having a first thickness. Spacers are formed on sidewalls of the gate structure. One or more impurity regions are form...	01/20/2009
7479433	Method for manufacturing semiconductor device A method of manufacturing a semiconductor device includes depositing a mask material to be patterned into a desired target pattern on an underlying material; patterning the mask material into a preparatory pattern including the target pattern and being larger than t...	01/20/2009
7473607	Method of manufacturing a multi-workfunction gates for a CMOS circuit A method of manufacturing a device includes doping a low voltage threshold area and a high voltage threshold area. Gate structures are formed over the low voltage threshold and high voltage threshold areas while protecting the gate structure over the low voltage thr...	01/06/2009
7465635	Method for manufacturing a gate sidewall spacer using an energy beam treatment The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers pro...	12/16/2008
7465636	Methods for forming semiconductor wires and resulting devices Methods for forming a wire from silicon or other semiconductor material are disclosed. Also disclosed are various devices including such a semiconductor wire. According to one embodiment, a wire is spaced apart from an underlying substrate, and the wire extends betw...	12/16/2008

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Class 438/301 - Source or drain doping