Class 438/293 - Fusion or solidification of semiconductor region

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Process for making an insulated gate field effect transistor
No. of patents: 29
Last issue date: 02/28/2012

Number	Title	Issue Date
8124486	Method to enhance channel stress in CMOS processes The invention provides a method of fabricating a semiconductor device that enhances the amount of stress that is transmitted to the channel region for carrier mobility enhancement. In one embodiment an amorphous region is formed at or near the gate dielectric interf...	02/28/2012
8048750	Method to enhance channel stress in CMOS processes The invention provides a method of fabricating a semiconductor device that enhances the amount of stress that is transmitted to the channel region for carrier mobility enhancement. In one embodiment an amorphous region is formed at or near the gate dielectric interf...	11/01/2011
8048749	Method for manufacturing semiconductor device A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process....	11/01/2011
7972931	Top-gate thin-film transistors using nanoparticles and method of manufacturing the same The present invention relates to a method of manufacturing thin-film transistors using nanoparticles and thin film transistors manufactured by the method. A hydrophilic buffer layers are deposited on the substrates to facilitate formation of nanoparticle films. Sint...	07/05/2011
7833866	Manufacture of semiconductor device A reflectance-controlling layer whose reflectance to irradiation of laser light becomes lower as a thickness thereof becomes thinner is formed on a semiconductor substrate having a first region and a second region. Thereafter, the reflectance-controlling layer on th...	11/16/2010
7348268	Controlled breakdown phase change memory device A phase change memory material may be deposited over an electrode in a pore through an insulator. The adherence of the memory material to the insulator may be improved by using a glue layer. At the same time, a breakdown layer may be formed in the pore between the m...	03/25/2008
7342276	Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme...	03/11/2008
7262427	Structure for phase change memory and the method of forming same A phase change device includes a first contact electrode structure a phase change material and a first insulating material between the phase change material and the first contact electrode structure and a second contact electrode in contact with the phase change mat...	08/28/2007
7029978	Controlling the location of conduction breakdown in phase change memories A phase change memory may be formed in a pore of a semiconductor structure. A selected region of the pore may be processed so that breakdown in that region is either more or less likely. As a result, by reducing the variation in the location of breakdown from cell t...	04/18/2006
6936518	Creating shallow junction transistors A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within ...	08/30/2005
6864142	Method to produce a factory programmable IC using standard IC wafers and the structure A method for programming a semiconductor element in a semiconductor structure such as an IC involves reducing the backside thickness of the substrate and directing an energy beam through the backside at an opaque component of the semiconductor element. A support str...	03/08/2005
6696346	Method of manufacturing semiconductor device It is an object of the present invention to provide a semiconductor device capable of decreasing electric resistance of a lower electrode provided therein, as well as capable of accurately responding to external signals having high frequencies inputted th...	02/24/2004
6680227	Non-volatile memory device and fabrication method thereof A nonvolatile read-only memory device, wherein a word line is on a substrate and the word line includes a metal layer a polysilicon line. A trapping layer is further located between the word line and the substrate. A polysilicon protection line is formed ...	01/20/2004
6617634	RuSixOy-containing adhesion layers and process for fabricating the same A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSix Oy, where ...	09/09/2003
6489188	Laser annealing system for crystallization of semiconductor layer and method of the same The present invention discloses a method for forming a polycrystalline semiconductor layer on a substrate at an atmospheric pressure, including: providing a chamber having an opening portion and a stage therein; forming an amorphous semiconductor layer on...	12/03/2002
6482662	Semiconductor device fabricating method A method of fabricating a semiconductor device is provided that includes forming first and second gate electrodes on a substrate via a first photo mask, in which the first and second gate electrodes are in a longitudinal direction parallel to respective c...	11/19/2002
6468864	Method of fabricating silicon nitride read only memory A method of fabricating silicon nitride read only memory. A trapping layer is formed on a substrate. Next, a patterned photoresist layer is formed, and the substrate region at the lower section of the trapping layer masked by the photoresist layer is defi...	10/22/2002
6409828	Method and apparatus for achieving a desired thickness profile in a flow-flange reactor A method and apparatus are disclosed for achieving a desired thickness profile in a semiconductor device (44) using a flow-flange reactor (10), by adjusting input flow ratios in the flow-flange (12) of the reactor (10). A target thickness profile is estab...	06/25/2002
6224667	Method for fabricating semiconductor light integrated circuit According to a method for fabricating a semiconductor light integrated circuit of the invention, a light waveguide layer and a clad layer are provided on a longitudinal aperture by epitaxial growth technique using a relatively low growth pressure. In cont...	05/01/2001
6165264	Method for semiconductor crystal growth The invention provides a method for selective growth of semiconductor crystals, including the step of forming a semiconductor layer in a selected region of a semiconductor substrate by using a mask, the semiconductor layer being controlled with respect to...	12/26/2000
6143586	Electrostatic protected substrate An electrostatic protected integrated circuit (IC) substrate and a method of making an integrated circuit package with the electrostatic protected IC substrate includes an IC substrate, having a plurality of electrical traces formed on the top of the IC s...	11/07/2000
5833749	Compound semiconductor substrate and process of producing same A compound semiconductor substrate having at least one compound semiconductor layer epitaxially grown on a silicon single crystal substrate, wherein the silicon single crystal substrate has a surface on which the compound semiconductor layer is epitaxiall...	11/10/1998
5786261	Method for fabricating semiconductor device having device isolation layer First, a non-doped AlGaAs layer and an n-GaAs layer serving as a conductive layer are formed in order on the surface of a semi-insulating GaAs substrate. Then, a photoresist film having an opening in its predetermined position is formed on the surface of ...	07/28/1998
5773345	Optical link amplifier and a wavelength multiplex laser oscillator The present invention provides an optical link amplifier which reduces the attenuation of the optical signal passing through optical an link amplifier so as to have a fail-safe function to ensure the communication path of an optical signal even if abnorma...	06/30/1998
5762706	Method of forming compound semiconductor device The present invention includes a process of growing a compound semiconductor layer locally, after applying radical particles that do not become an etchant of a compound semiconductor layer to an insulating mask so as to terminate the surface of the insula...	06/09/1998
5589408	Method of forming an alloyed drain field effect transistor and device formed A method of forming an alloyed drain field effect transistor (10). A field effect transistor and a bipolar transistor are formed in a portion of a monocrystalline semiconductor substrate (11) that is bounded by a first major surface (12). A control electr...	12/31/1996
4542580	Method of fabricating n-type silicon regions and associated contacts Disclosed are improved bipolar and field effect transistors having n-type silicon regions and associated electrical contacts comprising monocrystalline silicon doped with arsenic and phosphorus. The transistors are fabricated by depositing on a silicon su...	09/24/1985
4364778	Formation of multilayer dopant distributions in a semiconductor A method of making solid state devices having multilayer dopant distributions, including p-p+ and n-n+ junctions, etc. A semiconductor body is rapidly melted, typically by a laser, electron beam, or ion beam. Present in the melt is a first dopant having a...	12/21/1982
4351674	Method of producing a semiconductor device A region containing a high concentration of impurity and a desired region adjacent thereto are fused by irradiation with a laser beam, to diffuse the impurity in the lateral direction into the desired region and to render the desired region a low resistan...	09/28/1982

PatentStorm

Quotables

PatentStorm News

Class 438/293 - Fusion or solidification of semiconductor region