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| Number | Title | Issue Date |
| 8114723 | Method of forming multi-high-density memory devices and architectures A structure, memory devices using the structure, and methods of fabricating the structure. The structure includes: an array of nano-fins, each nano-fin comprising an elongated block of semiconductor material extending axially along a first direction, the nano-fins a... | 02/14/2012 |
| 8114722 | Manufacturing method of semiconductor device To suppress generation of dangling bonds, the present invention relates to a method for manufacturing a semiconductor device including the steps of: forming a semiconductor film; forming a gate insulating film and a gate electrode over the semiconductor film; formin... | 02/14/2012 |
| 8110452 | Liquid crystal display device and manufacturing method thereof A lower substrate for a liquid crystal display device and the method of making the same are disclosed. The method includes steps of: (a) providing a substrate; (b) forming a patterned transparent layer having plural recess on the substrate; (c) forming a first barri... | 02/07/2012 |
| 8093109 | Method for forming semiconductor thin film and method for manufacturing electronic device A method for forming a semiconductor thin film includes the steps of applying an inorganic semiconductor fine particle-dispersion solution on a substrate and drying the coating to form a semiconductor fine particle layer, and immersing the semiconductor fine particl... | 01/10/2012 |
| 8093110 | Method for manufacturing thin film transistor A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor c... | 01/10/2012 |
| 8088653 | Thin-film transistor, method of manufacturing the same, liquid crystal display panel having the same and electro-luminescence display panel having the same A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer,... | 01/03/2012 |
| 8088655 | Thin film transistor and manufacturing method thereof The present invention provides a step in which a channel-length of a TFT can be controlled with higher reproducibility. In addition, the present invention provides a step in which a short channel-length of the TFT can be manufactured. Further, the present invention ... | 01/03/2012 |
| 8088654 | Semiconductor device and manufacturing method thereof To provide a semiconductor device which is higher functional and reliable and a technique capable of manufacturing the semiconductor device with a high yield at low cost without complexing the apparatus or process. At least one of a first conductive layer and a seco... | 01/03/2012 |
| 8084308 | Single gate inverter nanowire mesh Nanowire-based devices are provided. In one aspect, a field-effect transistor (FET) inverter is provided. The FET inverter includes a plurality of device layers oriented vertically in a stack, each device layer having a source region, a drain region and a plurality ... | 12/27/2011 |
| 8062937 | Thin-film transistor substrate, method of manufacturing the same and display panel having the same A thin-film transistor (TFT) substrate includes a gate electrode, a gate insulation pattern, a channel pattern, a first organic insulation pattern, a source electrode and a drain electrode. The gate electrode is formed on a base substrate. The gate insulation patter... | 11/22/2011 |
| 8053291 | Method for making thin film transistor comprising flocculating of carbon nanotubes A method for making a thin film transistor, the method includes the steps of: providing a plurality of carbon nanotubes and an insulating substrate; flocculating the carbon nanotubes to acquire a carbon nanotube structure, applying the carbon nanotube structure on t... | 11/08/2011 |
| 8048725 | Method of forming pattern and method of producing electronic element A method of forming a pattern and a method of producing an electronic element are characterized by including a first step of forming an electrically conductive film (D) by applying a liquid composition onto a first plate (10), and heating the first plate (... | 11/01/2011 |
| 8048726 | SOI semiconductor device with reduced topography above a substrate window area In sophisticated SOI devices, circuit elements, such as substrate diodes, may be formed in the crystalline substrate material on the basis of a substrate window, wherein the pronounced surface topography may be compensated for or at least reduced by performing addit... | 11/01/2011 |
| 8034673 | Film formation method and apparatus for forming silicon-containing insulating film doped with metal A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a si... | 10/11/2011 |
| 8034672 | Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel ... | 10/11/2011 |
| 8030141 | Thin film transistor and method for fabricating the same, and liquid crystal display device and method for manufacturing the same A thin film transistor (TFT) including a nanowire semiconductor layer having nanowires aligned in one direction in a channel region is disclosed. The nanowire semiconductor layer is selectively formed in the channel region. A method for fabricating the TFT, a liquid... | 10/04/2011 |
| 8030140 | Semiconductor device having a germanium layer as a channel and method for manufacturing the same A method for manufacturing a semiconductor device comprises forming an insulating layer on a polymer substrate, growing a germanium layer on the insulating layer, forming a gate pattern on the germanium layer, forming a metal layer on the germanium layer including t... | 10/04/2011 |
| 8026131 | SOI radio frequency switch for reducing high frequency harmonics First doped semiconductor regions having the same type doping as a bottom semiconductor layer and second doped semiconductor regions having an opposite type doping are formed directly underneath a buried insulator layer of a semiconductor-on-insulator (SOI) substrat... | 09/27/2011 |
| 8017461 | Methods of forming semiconductor-on-insulating (SOI) field effect transistors with body contacts Semiconductor-on-insulator (SOI) field effect transistors include a semiconductor substrate and a first semiconductor active region on a first portion of a surface of the substrate. A first electrically insulating layer is provided. This first electrically insulatin... | 09/13/2011 |
| 8012813 | Display substrate and method of manufacturing the same A three mask process for forming an LCD substrate includes, depositing in sequence on a base substrate a gate metallic layer, a gate insulation layer and a channel layer. A first photoresist pattern is used to form a gate electrode of a switching device, a channel p... | 09/06/2011 |
| 8008136 | Fully silicided gate structure for FinFET devices A method may include forming a gate electrode over a fin structure, depositing a first metal layer on a top surface of the gate electrode, performing a first silicide process to convert a portion of the gate electrode into a metal-silicide compound, depositing a sec... | 08/30/2011 |
| 7993992 | Semiconductor device and method of fabricating the same There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively... | 08/09/2011 |
| 7993991 | Manufacturing method of thin film transistor and manufacturing method of display device A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resi... | 08/09/2011 |
| 7989275 | Thin film transistor, manufacturing method thereof, display device, and manufacturing method thereof A light-blocking layer is formed using a first resist mask, and a base film is formed over the light-blocking layer. A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are sequentially... | 08/02/2011 |
| 7985632 | Method for forming microwires and/or nanowires A method for forming a wire in a layer based on a monocrystalline or amorphous material. The method forms two trenches in the layer, crossing through one face of the layer, separated from each other by one portion of the layer, by an etching of the layer on which is... | 07/26/2011 |
| 7981735 | Method of manufacturing a Schottky barrier tunnel transistor Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at ... | 07/19/2011 |
| 7977173 | Silicon thin film transistors, systems, and methods of making same Systems and methods of fabricating silicon-based thin film transistors (TFTs) on flexible substrates. The systems and methods incorporate and combine deposition processes such as chemical vapor deposition and plasma-enhance vapor deposition, printing, coating, and o... | 07/12/2011 |
| 7977170 | Flexible substrate with electronic devices and traces A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material and has a metallic coating on one surface. A portion of the metallic coating is etched to form a patterned metallic coating. A particulate materia... | 07/12/2011 |
| 7977172 | Dynamic random access memory (DRAM) cells and methods for fabricating the same A method for fabricating a memory cell is provided. A trench is formed in a semiconductor structure that comprises a semiconductor layer, and a trench capacitor is formed in the trench. Conductivity determining impurities are implanted into the semiconductor structu... | 07/12/2011 |
| 7977171 | Method for fabricating thin film transistor substrate A method of fabricating a thin film transistor substrate for reducing a mask process and, at the same time removing a transparent electrode ITO which remains at a non-display area by a contact hole filling process is disclosed. In the method of fabricating the thin ... | 07/12/2011 |
| 7960219 | Thin-film transistor substrate and method of fabricating the same A thin-film transistor (“TFT”) substrate includes an insulating substrate, a gate line and a data line which are insulated from each other, disposed on the insulating substrate and are arranged in a lattice, and a pixel electrode which is electrically connected ... | 06/14/2011 |
| 7955911 | TFT-LCD pixel unit and method for manufacturing the same A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer that are... | 06/07/2011 |
| 7951657 | Method of forming a planar field effect transistor with embedded and faceted source/drain stressors on a silicon-on-insulator (S0I) wafer, a planar field effect transistor structure and a design structure for the planar field effect transistor Disclosed are embodiments of a method of forming, on an SOI wafer, a planar FET with embedded and faceted source/drain stressors. The method incorporates a directional ion implant process to create amorphous regions at the bottom surfaces of source/drain recesses in... | 05/31/2011 |
| 7951656 | Method for manufacturing semiconductor device A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the ... | 05/31/2011 |
| 7951655 | Method for fabricating a semiconductor device A method for fabricating a semiconductor device comprises: performing a thermal process to expanding a local doped region formed between gate patterns on a semiconductor substrate; and etching a central region of an expanded local doped region so that the expanded l... | 05/31/2011 |
| 7947541 | Method of fabricating a semiconductor device A method for fabricating a semiconductor device comprises: forming a gate pattern over a silicon active region and an insulating layer, which form a semiconductor substrate; removing the silicon active region exposed between the gate patterns; and filling a space be... | 05/24/2011 |
| 7947542 | Method for making thin film transistor A method for making a thin film transistor, the method comprising the steps of: (a) providing a carbon nanotube array and an insulating substrate; (b) pulling out a carbon nanotube film from the carbon nanotube array by using a tool; (c) placing at least one carbon ... | 05/24/2011 |
| 7947543 | Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation Embodiments of a manufacturing process for recessed gate devices on silicon-on-insulator (SOI) substrate with self-aligned lateral isolation are described. This allows the creation of true in-pitch recessed gate devices without requiring an extra isolation dimension... | 05/24/2011 |
| 7935582 | Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation,... | 05/03/2011 |
| 7932136 | Source/drain junction for high performance MOSFET formed by selective EPI process In a field effect transistor (FET), halo features may be formed by etching into the surface of a silicon layer followed by a step of growing a first epitaxial silicon (epi-Si) layer on the etched silicon layer. Source (S) and drain (D), as well as S/D extension feat... | 04/26/2011 |
