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| Number | Title | Issue Date |
| 8440501 | Memory device A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material... | 05/14/2013 |
| 8435830 | Methods of fabricating semiconductor devices Methods of fabricating semiconductor devices are provided including forming a dielectric interlayer on a substrate, the dielectric interlayer defining an opening therein. A metal pattern is formed in the opening. An oxidization process is performed on the metal patt... | 05/07/2013 |
| 8426242 | Composite target sputtering for forming doped phase change materials A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentratio... | 04/23/2013 |
| 8415197 | Phase change memory device having an improved word line resistance, and methods of making same A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a word line, an interlayer insulation film, a strapping line, a plurali... | 04/09/2013 |
| 8394667 | Methods of forming memory cells, and methods of patterning chalcogenide-containing stacks Some embodiments include methods of forming memory cells. Chalcogenide is formed over a plurality of bottom electrodes, and top electrode material is formed over the chalcogenide. Sacrificial material is formed over the top electrode material. A plurality of memory ... | 03/12/2013 |
| 8377741 | Self-heating phase change memory cell architecture A method for manufacturing a phase change memory includes forming a phase change memory cell by forming a phase change layer between two switching layers. The phase change layer is separated from thermal heat sinks, such as the bitline or wordline, by the switching ... | 02/19/2013 |
| 8372688 | Method for forming Ge-Sb-Te film and storage medium A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is load... | 02/12/2013 |
| 8372687 | System, method and apparatus for forming multiple layers in a single process chamber A method for forming multiple layers in a single process chamber includes placing a substrate in the process chamber having multiple processing sources and iteratively forming a copper indium gallium selenium (CIGS) including forming multiple relatively thin CIGS la... | 02/12/2013 |
| 8367460 | Horizontally oriented and vertically stacked memory cells Horizontally oriented and vertically stacked memory cells are described herein. One or more method embodiments include forming a vertical stack having a first insulator material, a first memory cell material on the first insulator material, a second insulator materi... | 02/05/2013 |
| 8349646 | Semiconductor wafer for semiconductor components and production method A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface active zone as basic material for semiconductor component structures. ... | 01/08/2013 |
| 8343798 | Method fabricating phase-change semiconductor memory device A method of fabricating a phase change memory having a unit memory cell is described. The unit memory cell includes a phase change element connected to a corresponding vertical cell diode. The phase change element is formed from a phase change material layer formed ... | 01/01/2013 |
| 8338225 | Method to reduce a via area in a phase change memory cell A memory cell structure and method to form such structure. The method partially comprised of forming a via within an oxidizing layer, over the center of a bottom electrode. The method includes depositing a via spacer along the sidewalls of the via and oxidizing the ... | 12/25/2012 |
| 8338224 | Resistance-type random access memory device having three-dimensional bit line and word line patterning Provided is a resistance random access memory device and a method of fabricating, the same. The method includes forming a bit-line stack in which a plurality of local bit-lines are vertically stacked on a substrate, forming a word-line including a plurality of local... | 12/25/2012 |
| 8313979 | Phase change memory cell having vertical channel access transistor A device includes a substrate having a first region and a second region. The first region comprises a first field effect transistor having a horizontal channel region within the substrate, a gate overlying the horizontal channel region, and a first dielectric coveri... | 11/20/2012 |
| 8293571 | Programmable metallization cells and methods of forming the same A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous laye... | 10/23/2012 |
| 8283203 | Methods utilizing microwave radiation during formation of semiconductor constructions Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5... | 10/09/2012 |
| 8283202 | Single mask adder phase change memory element A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semicond... | 10/09/2012 |
| 8278139 | Passivating glue layer to improve amorphous carbon to metal adhesion A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting material... | 10/02/2012 |
| 8268665 | Antimony and germanium complexes useful for CVD/ALD of metal thin films Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactur... | 09/18/2012 |
| 8241947 | Phase change memory elements using energy conversion layers, memory arrays and systems including same, and methods of making and using same A phase change memory element and method of forming the same. The memory element includes a phase change material layer electrically coupled to first and second conductive material layers. A energy conversion layer is formed in association with the phase change mate... | 08/14/2012 |
| 8211742 | Lateral phase change memory A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first electrode is covered by the insulating layer which is, in turn, covered by t... | 07/03/2012 |
| 8198129 | Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substr... | 06/12/2012 |
| 8187918 | Methods of forming multi-level cell of semiconductor memory Provided is a method of forming a semiconductor memory cell in which in order to store two bits or more data in a memory cell, three or more bottom electrode contacts (BECs) and phase-change materials (GST) have a parallel structure on a single contact plug (CP) and... | 05/29/2012 |
| 8178387 | Methods for reducing recrystallization time for a phase change material A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer materia... | 05/15/2012 |
| 8178388 | Programmable resistive RAM and manufacturing method Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the pro... | 05/15/2012 |
| 8178386 | Phase change memory cell array with self-converged bottom electrode and method for manufacturing An array of phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming a patterning layer on the separation layer and forming an array of mask openings in the patterning layer using lithographic process. Etch masks are... | 05/15/2012 |
| 8173486 | Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element coupled to the steering element by: (a) forming a material layer on t... | 05/08/2012 |
| 8168469 | Nonvolatile memory device made of resistance material and method of fabricating the same A nonvolatile memory device using a resistance material and a method of fabricating the same are provided. The nonvolatile memory device includes a switching element, and a data storage part electrically connected to the switching element. In the data storage part, ... | 05/01/2012 |
| 8153471 | Method for forming a reduced active area in a phase change memory structure A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region at an upper portion of the spacer defining a phase change memory ele... | 04/10/2012 |
| 8148197 | Methods of forming germanium-antimony-tellurium materials and a method of forming a semiconductor device structure including the same A method of forming a material. The method comprises conducting an ALD layer cycle of a first metal, the ALD layer cycle comprising a reactive first metal precursor and a co-reactive first metal precursor. An ALD layer cycle of a second metal is conducted, the ALD l... | 04/03/2012 |
| 8133758 | Method of fabricating phase-change memory device having TiC layer Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching ... | 03/13/2012 |
| 8133756 | Chemical-mechanical polishing method for polishing phase-change material and method of fabricating phase-change memory device using the same A chemical-mechanical polishing (CMP) method of polishing a phase-change material and a method of fabricating a phase-change memory, the CMP method including forming the phase-change material on an activation surface of a semiconductor wafer, and performing a CMP pr... | 03/13/2012 |
| 8133757 | Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an openin... | 03/13/2012 |
| 8129218 | Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change materia... | 03/06/2012 |
| 8124445 | Confined resistance variable memory cell structures and methods Confined resistance variable memory cell structures and methods are described herein. One or more methods of forming a confined resistance variable memory cell structure includes forming a via in a memory cell structure and forming a resistance variable material in ... | 02/28/2012 |
| 8088643 | Resistance variable memory device with nanoparticle electrode and method of fabrication A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of forming the nanoparticle utilizes a template over the electrode or rand... | 01/03/2012 |
| 8088644 | Bistable resistance value acquisition device, manufacturing method thereof, metal oxide thin film, and manufacturing method thereof A ferroelectric layer (104) is sandwiched between a lower electrode layer (103) and an upper electrode (105). When a predetermined voltage (DC or pulse) is applied between the lower electrode layer (103) and the upper electrode (105 | 01/03/2012 |
| 8084295 | Thin film transistor having n-type and p-type CIS thin films and method of manufacturing the same Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching functions of a diode. The TFT according to the present inventio... | 12/27/2011 |
| 8071423 | Variable resistance memory devices and methods of forming variable resistance memory devices Provided are variable resistance memory devices and methods of forming the variable resistance memory devices. The methods can include forming an etch stop layer on an electrode, forming a molding layer on the etch stop layer, forming a recess region including a low... | 12/06/2011 |
| 8053274 | Self cleaning large scale method and furnace system for selenization of thin film photovoltaic materials According to an embodiment, the present invention provide a method for fabricating a copper indium diselenide semiconductor film using a self cleaning furnace. The method includes transferring a plurality of substrates into a furnace, the furnace comprising a proces... | 11/08/2011 |
