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| Number | Title | Issue Date |
| 7435517 | Method for reducing the fogging effect A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing ... | 10/14/2008 |
| 7425396 | Method for reducing an overlay error and measurement mark for carrying out the same A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up furt... | 09/16/2008 |
| 7419764 | Method of fabricating nanoimprint mold Provided is a method of fabricating a nanoimprint mold which can form sub-100 nm fine pattern structures. The method includes forming patterns on a first substrate using an E-beam lithography (EBL) process, and transferring the patterns formed on the first substrate... | 09/02/2008 |
| 7407736 | Methods of improving single layer resist patterning scheme Methods for improving a single layer resist (SLR) patterning scheme, and in particular, its SLR layer and anti-reflective coating (ARC) etch selectivity, are disclosed. In one method, a patterned SLR layer over an anti-reflective coating (ARC) is provided and at lea... | 08/05/2008 |
| 7388213 | Method of registering a blank substrate to a pattern generating particle beam apparatus and of correcting alignment during pattern generation We have developed a method of registration of a particle beam to internal alignment targets present within photoresist areas which are to be imaged. The method does not affect the photoresist, so the quality of pattern produced in the resist after imaging is not aff... | 06/17/2008 |
| 7388216 | Pattern writing and forming method A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etc... | 06/17/2008 |
| 7384724 | Method for fabricating optical devices in photonic crystal structures A method for manufacturing optical components in a three-dimensional photonic crystal lattice. A first resist (9) is coated on a substrate (10) and exposed to an e-beam (11), to produce an imaged area (12). Another resist coating is appli... | 06/10/2008 |
| 7385209 | Micromachining process, system and product Ion beam lithography technique wherein a higher amount of radiation energy is deposited to predetermined regions in the bulk if a suitable substrate. By selecting the radiation nature, its energy and the irradiation parameters a structure can be created in the bulk ... | 06/10/2008 |
| 7384711 | Stencil mask having main and auxiliary strut and method of forming the same A stencil mask includes a membrane forming thin layer having membrane areas and a border area that limits the membrane areas. The membrane areas have a plurality of pattern areas which include an aperture through which particle beams can permeate and non-pattern are... | 06/10/2008 |
| 7371483 | Method for manufacturing mask for focus monitoring, and method for manufacturing semiconductor device Disclosed is a method for manufacturing a mask for focus monitoring, comprising forming a first opening portion and a second opening portion in a surface region of a transparent substrate, the second opening portion having a pattern shape corresponding to a pattern ... | 05/13/2008 |
| 7348129 | Electron beam processing method and apparatus An organic material film formed on a surface of an object to be processed is cured by electron beams irradiated thereon through a hydrocarbon radical generating gas. By employing the electron beams and the hydrocarbon radical generating gas, a deterioration of a k v... | 03/25/2008 |
| 7348130 | Electron exposure to reduce line edge roughness The present invention describes a method including providing a substrate; forming a photoresist on the substrate; performing a post-apply bake on the photoresist; exposing the photoresist to actinic radiation; performing a post-exposure bake on the photoresist; deve... | 03/25/2008 |
| 7332252 | Method of forming a mask layout and layout formed by the same A mask layout forming method includes designing an original layout in which a diagonal pattern of a first polygon is repeatedly arranged in a diagonal direction relative to a vertical-axis direction. Opposite edge sides of the diagonal pattern of the first polygon a... | 02/19/2008 |
| 7323291 | Dual layer workpiece masking and manufacturing process The present invention relates to preparation of patterned workpieces in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a workpiece substrate. The methods and devices produce small featur... | 01/29/2008 |
| 7316884 | 5-methylene-1,3-dioxolan-4-one derivatives, process for their production, polymers of the derivatives, resist compositions, and pattern formation process A 5-methylene-1,3-dioxolan-4-one derivative and a monomer and copolymer thereof and a resist composition containing the polymer or copolymer where the 5-methylene-1,3 -dioxolan-4-one derivative is of formula (1): ... | 01/08/2008 |
| 7306896 | Electron beam duplication lithography method An electron beam duplication lithography apparatus and method for focusing electrons emitted from a mask plate as a result of an application of an electric field between a mask plate and a duplication plate. Irradiation of electrons from the mask plate is assisted t... | 12/11/2007 |
| 7297460 | Radiation curable ink compositions suitable for ink-jet printing A radiation curable ink composition comprising at least one initiator and at least one polyhedral oligomeric silsesquioxane (POSS) represented by the following empirical formula [R(SiO1.5)]n wherein n=4, 6, 8, 10, 12, 14, 16 and larger and each... | 11/20/2007 |
| 7285365 | Image enhancement for multiple exposure beams An aspect of the present invention includes a method for patterning a workpiece covered at least partly with a layer sensitive to electromagnetic radiation by using a plurality of exposure beams having a predetermined separation in at least a first direction for exp... | 10/23/2007 |
| 7282318 | Photoresist composition for EUV and method for forming photoresist pattern using the same The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by... | 10/16/2007 |
| 7270921 | Pattern writing and forming method A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etc... | 09/18/2007 |
| 7267927 | Method for fabricating semiconductor device and equipment for fabricating the same A method for fabricating a semiconductor device and an equipment for fabricating the semiconductor device are described. According to the method and the equipment, a semiconductor substrate is irradiated with a particle beam through an opening formed in a thi... | 09/11/2007 |
| 7264909 | Exposure parameter obtaining method, exposure parameter evaluating method, semiconductor device manufacturing method, charged beam exposure apparatus, and method of the same An exposure parameter obtaining method comprising forming a charged reference pattern and a plurality of charged exposure patterns at a surface region of a to-be-exposed insulation substrate by projecting a charged beam with a first incident energy using a reference... | 09/04/2007 |
| 7261983 | Reference wafer and process for manufacturing same An apparatus and method for manufacturing and using a calibrated registration reference wafer in a semiconductor manufacturing facility where an archive media includes etched alignment attributes. Exposing a pattern of complementary alignment attributes onto the arc... | 08/28/2007 |
| 7255976 | Laser-engravable flexo printing elements for the production of flexo printing forms containing blends of hydrophilic polymers and hydrophobic elastomers Laser-engravable flexographic printing elements for the production of flexographic printing plates have relief layers comprising blends of hydrophilic polymers and hydrophobic elastomers. Said flexographic printing elements are used for the production of flexographi... | 08/14/2007 |
| 7247412 | Method of correcting deviations of critical dimensions of patterns formed on a wafer in a EUVL process An embodiment includes a method of correcting deviations of critical dimensions of patterns formed on a wafer in an extreme ultraviolet lithography (EUVL) process. The embodiment includes preparing a reflection photo mask having a reflection layer and absorption pat... | 07/24/2007 |
| 7241542 | Process for controlling the proximity effect correction A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed w... | 07/10/2007 |
| 7232631 | Mask for charged particle beam exposure, and method of forming the same The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane... | 06/19/2007 |
| 7229742 | Methods for improving angled line feature accuracy and throughput using electron beam lithography and electron beam lithography system Methods to reduce the write time for forming mask patterns having angled and non-angled features using electron beam lithography are disclosed. In one exemplary embodiment, non-angled features of the mask pattern are formed by exposure to an electron beam. The orien... | 06/12/2007 |
| 7229743 | Electron beam lithography method, patterned master carrier for magnetic transfer, lithography method for patterned master carrier for magnetic transfer, and method for producing performatted magnetic recording media A fine pattern having first elements within track widths and second elements, which are shifted half a track pitch from the first elements, are drawn across the entire surface of a disk accurately and at high speed. A transfer pattern for a magnetic transfer master ... | 06/12/2007 |
| 7226723 | Methods for improving angled line feature accuracy and throughput using electron beam lithography and electron beam lithography system Methods to reduce the write time for forming mask patterns having angled and non-angled features using electron beam lithography are disclosed. In one exemplary embodiment, non-angled features of the mask pattern are formed by exposure to an electron beam. The orien... | 06/05/2007 |
| 7220531 | Resist for electron beam lithography and a process for producing photomasks using electron beam lithography The invention relates to a resist for electron beam lithography and to a process for producing photomasks for optical lithography. The inventive resist includes repeating units that are derived from maleic anhydride and that can act as an anchor group for the subseq... | 05/22/2007 |
| 7205078 | Method for generating backscattering intensity on the basis of lower layer structure in charged particle beam exposure, and method for fabricating semiconductor device utilizing this method A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a ... | 04/17/2007 |
| 7198881 | Photoresist composition for EUV and method for forming photoresist pattern using the same The present invention relates to photoresist compositions for EUV and methods for forming photoresist patterns. More specifically, fine photoresist patterns: of less than 50 nm without collapse are formed with EUV (Extreme Ultraviolet) as an exposure light source by... | 04/03/2007 |
| 7192686 | Photoacid generators based on novel superacids Carborane based PAG's are bulky, produce a strong and large superacid, and have polarities that are compatible with the chemically amplified polymers typically used in photoresists. Carborane based PAG's also provide another broad class of bulky PAG's that may be us... | 03/20/2007 |
| 7179568 | Defect inspection of extreme ultraviolet lithography masks and the like A dark-field imaging method for detecting defects in reflective lithography masks (e.g., extreme ultraviolet (EUV) masks) used, e.g., in processes for the fabrication of microelectronic devices. A mask blank is coated with a photoresist layer having a fluorescent dy... | 02/20/2007 |
| 7179571 | Apparatus for characterization of photoresist resolution, and method of use An optical apparatus used for the efficient characterization of photoresist material includes at least one grating interferometer having at least two gratings that together define an optical recombination plane. An optical stop blocks any zeroth order beam from prop... | 02/20/2007 |
| 7175970 | Mechanically robust interconnect for low-k dielectric material using post treatment In an embodiment, a trench is formed above a via from a photo resist (PR) trench pattern in a dielectric layer. The trench is defined by two sidewall portions and base portions. The base portions of the sidewalls are locally treated by a post treatment using the PR ... | 02/13/2007 |
| 7175952 | Method of generating mask distortion data, exposure method and method of producing semiconductor device A method of generating mask distortion data capable of improving accuracy of distortion measurement, an exposure method using the same and a method of producing a semiconductor device, wherein a production mask is produced by a first thin film formed with a predeter... | 02/13/2007 |
| 7160657 | Reference wafer and process for manufacturing same An apparatus and method for manufacturing and using a calibrated registration reference wafer in a semiconductor manufacturing facility. A reference reticle consisting of a 2-dimensional array of standard alignment attributes is exposed several times onto a photores... | 01/09/2007 |
| 7160655 | Exposure method using complementary divided mask, exposure apparatus, semiconductor device, and method of producing the same To provide an exposure method and an exposure apparatus, using a complementary divided mask, designed to enable alignment of a complementary divided mask at a high precision over the entire region of a semiconductor wafer. Further, to provide a semiconductor device ... | 01/09/2007 |
