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| Number | Title | Issue Date |
| 8057925 | Low switching current dual spin filter (DSF) element for STT-RAM and a method for making the same A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/R... | 11/15/2011 |
| 7906231 | Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel b... | 03/15/2011 |
| 7678475 | Spin-torque devices Spin-torque devices are based on a combination of giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) effects. The basic structure has various applications, including amplifiers, oscillators, and diodes. For example, if the low-magnetoresistance (GMR... | 03/16/2010 |
| 7355825 | Current-perpendicular-to-the-plane structure magnetoresistive element and head slider A magnetoresistive film is interposed between domain controlling films in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. The domain controlling films are designed to establish a first biasing magnetic field of a first intensity across... | 04/08/2008 |
| 7348647 | Digital memory cell device A digital magnetic memory cell device for read and/or write operations, having a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system, which is designed as an AAF system and includes at least one reference layer, wherein... | 03/25/2008 |
| 7317597 | Method and apparatus for testing magnetic head with TMR element A magnetic head testing apparatus having the function of evaluating pin holes in a tunnel barrier layer of a TMR element by a non destructive inspection is disclosed. The testing apparatus comprises a temperature control unit which sets a circumferential temperature... | 01/08/2008 |
| 7301733 | Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer w... | 11/27/2007 |
| 7289303 | Spin valve sensors having synthetic antiferromagnet for longitudinal bias Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed m... | 10/30/2007 |
| 7259940 | Thin-film magnetic head, head gimbal assembly, and hard disk drive A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film ... | 08/21/2007 |
| 7256971 | Process and structure to fabricate CPP spin valve heads for ultra-high recording density A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering ga... | 08/14/2007 |
| 7248445 | CPP magnetic sensing element and method for making the same A magnetic sensing element includes a composite film, a lower shield layer, and a lower electrode layer and an upper electrode layer for supplying a current perpendicular to the composite film. The composite film has an antiferromagnetic layer, a pinned magnetic lay... | 07/24/2007 |
| 7230290 | Digital magnetic storage cell device A digital magnetic memory cell device for read and/or write operation includes a soft-magnetic read and/or write layer system and at least one hard-magnetic reference layer system formed as an AAF system. The AAF system includes an AAF layer composite and at least o... | 06/12/2007 |
| 7218487 | Exchange coupling film and magnetoresistive element using the same An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic laye... | 05/15/2007 |
| 7196879 | Exchange coupling film and magnetoresistive element using the same A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in ... | 03/27/2007 |
| 7193824 | Method and apparatus for testing magnetic head with TMR element A magnetic head testing apparatus having the function of evaluating pin holes in a tunnel barrier layer of a TMR element by a non destructive inspection is disclosed. The testing apparatus comprises a temperature control unit which sets a circumferential temperature... | 03/20/2007 |
| 7145754 | Magnetoresistance effect element having a nonmagnetic intermediate layer having a two-dimensional fluctuation of oxygen A magnetoresistance effect element comprises a magnetoresistance effect film including a magnetically pinned layer whose direction of magnetization is pinned substantially in one direction, a magnetically free layer whose direction of magnetization changes in respon... | 12/05/2006 |
| 7123442 | Thin-film magnetic head and manufacturing method of thin-film magnetic head A thin-film magnetic head has an inductive write head element including an upper core layer with a front end section magnetically coupling with an upper magnetic pole, a lower core layer with a front end section magnetically coupling with a lower magnetic pole, a co... | 10/17/2006 |
| 7088561 | Method of making a tunnel valve sensor with improved free layer sensitivity A tunnel junction having reduced free layer coercivity for improved sensitivity. The tunnel valve has a free layer that has been deposited in the presence of a nitrogen gas, which reduces the coercivity of the free layer, thereby improving the sensor's sensitivity a... | 08/08/2006 |
| 7079360 | Spin valve transducer having partly patterned magnetoresistance element In a spin value type transducer including two magnetic shield layers, a patterned magnetoresistance element is in direct contact with one of the magnetic shield layers. A permanent magnet layer and an electrode layer are formed on the sides of the patterned magnetor... | 07/18/2006 |
| 7035061 | Magnetoresistive transducer with low magnetic moment, high coercivity stabilizing magnets A transducing head includes a first bias element, a second bias element, and a magnetoresistive sensor positioned between the first bias element and the second bias element. The first bias element and the second bias element are each formed of a permanent magnet mat... | 04/25/2006 |
| 7026063 | Spin-valve type magnetoresistance sensor and thin-film magnetic head A method and apparatus of a spin-type magnetoresistance sensor having a free and pinned magnetic layer stacked with a non-magnetic interposed layer are disclosed. Specifically, the spin-valve type magnetoresistance sensor of the present invention is equipped with a ... | 04/11/2006 |
| 6635366 | Spin valve thin film magnetic element and thin film magnetic head A spin valve thin film magnetic element is provided composed of an antiferromagnetic layer; a pinned magnetic layer, formed in contact with the antiferromagnetic layer, in which the direction of magnetization is pinned by an exchange coupling magnetic fie... | 10/21/2003 |
