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| Number | Title | Issue Date |
| 7390584 | Spin dependent tunneling devices having reduced topological coupling A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic ferromagnetic material on one side. A compensation thin-film of an anisotropic fe... | 06/24/2008 |
| 7381480 | Magnetic recording element and magnetic recording device using the same A magnetic recording element includes a fixed layer having first and second surfacesm, a recording layer having third and fourth surfaces and being essentially made of a ferromagnetic material having first and second atomic potentials for the majority-spin band elec... | 06/03/2008 |
| 7369373 | CPP GMR with hard magnet in stack bias layer A current perpendicular to plane magnetorestive sensor having an improved in stack biasing. An amorphous layer breaks the structure allowing a desire crystolographic structure in an in stack bias layer that provides greatly increased coercivity (Hc) in the bias laye... | 05/06/2008 |
| 7362546 | Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and a... | 04/22/2008 |
| 7352539 | Thin-film magnetic head having a covered insulating layer The method of making a thin-film magnetic head in accordance with the present invention forms a cover layer on an insulating layer about a magnetoresistive film so as to eliminate a protrusion riding on the magnetoresistive film. The protrusion can be eliminated by ... | 04/01/2008 |
| 7333303 | Magnetoresistive device supplying sense current thereto dependent upon a relationship existent between the thickness of the fixed layer and its magnetization Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including ... | 02/19/2008 |
| 7318352 | Method for producing stress impedance effect element and that element A method for producing a stress impedance effect element, the method including: connecting opposite ends of a magnetostrictive amorphous thin wire and respective electrodes by ultrasonic bonding; forming a groove in an elastic thin substrate having a thermal expansi... | 01/15/2008 |
| 7300711 | Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magn... | 11/27/2007 |
| 7300712 | Magnetic sensor and position detector In a magnetic sensor (1) including a substrate (10) having a magnetism-sensitive element (11) formed thereon, a hard membrane (14) is formed on the outermost surface, an organic film (13) to relieve the stress caused by the hard me... | 11/27/2007 |
| 7289303 | Spin valve sensors having synthetic antiferromagnet for longitudinal bias Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed m... | 10/30/2007 |
| 7281407 | Sensing film material A sensor 30 has first and second electrodes 32A, 32B spaced to define a gap 34 therebetween. The electrodes are formed on a substrate which can be covered with a film of material. The width of the gap 34 is different at different p... | 10/16/2007 |
| 7280323 | Magnetoresistance effect element and magnetic head A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed a... | 10/09/2007 |
| 7280320 | Thin-film magnetic head and manufacturing method thereof A lower shield layer is formed by being embedded in a first recess formed in an under layer. Accordingly, the distance between the lower shield layer and a slider can be reduced. Also, a second metal layer is formed from above a gap layer covering an electrode extra... | 10/09/2007 |
| 7268978 | Self-pinned magnetic detecting element A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned ... | 09/11/2007 |
| 7268984 | Magnetic detecting element having a self-pinned layer A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned ... | 09/11/2007 |
| 7268983 | Magnetic sensing device with multilayered pinned magnetic layer having magnetostriction-enhancing layer A magnetic sensing device is presented that has a multilayer material with a pinned magnetic layer, a nonmagnetic material layer, and a free magnetic layer. The pinned magnetic layer is a composite with a nonmagnetic intermediate layer and magnetic thin-film layers ... | 09/11/2007 |
| 7265950 | Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a throu... | 09/04/2007 |
| 7253995 | Magnetic head and magnetic recording/reproducing device A magnetic head includes a first electrode layer, a first ferromagnetic electrode pair that is electrically connected to the first electrode layer, and a second ferromagnetic electrode pair that intersects with a current which flows between the first ferromagnetic e... | 08/07/2007 |
| 7248445 | CPP magnetic sensing element and method for making the same A magnetic sensing element includes a composite film, a lower shield layer, and a lower electrode layer and an upper electrode layer for supplying a current perpendicular to the composite film. The composite film has an antiferromagnetic layer, a pinned magnetic lay... | 07/24/2007 |
| 7241514 | Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the t... | 07/10/2007 |
| 7234360 | TMR sensor A sensor for measuring mechanical changes in length, in particular a compressive and/or tensile stress sensor, includes a sandwich system with two flat and superposed electrodes separated from each other by a tunnel element (tunnel barrier), in particular an oxide b... | 06/26/2007 |
| 7229706 | Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic layer The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance cha... | 06/12/2007 |
| 7223485 | Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a directi... | 05/29/2007 |
| 7220499 | CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmag... | 05/22/2007 |
| 7218487 | Exchange coupling film and magnetoresistive element using the same An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic laye... | 05/15/2007 |
| 7215566 | Magnetroresistive random access memory and method of manufacturing the same A magnetic memory includes a TMR element in its memory layer, wherein the TMR element in the memory layer has ferromagnetic layers which are kept in tensile strain, the ferromagnetic layers having either Fe, Co or Ni, and a wiring layer adjacent to each of the ferro... | 05/08/2007 |
| 7196875 | Permalloy sensor having individual permalloy resist pattern runners with lengths perpendicular to a wafer level anisotropy A permalloy sensor having high sensitivity is presented A substrate and a sensor has a first surface having a wafer level anisotropy in a given direction. A permalloy resistor pattern of individual runners is deposited on the surface such that the mechanical length ... | 03/27/2007 |
| 7196879 | Exchange coupling film and magnetoresistive element using the same A PtMn alloy film known as an antiferromagnetic material having excellent corrosion resistance is used for an antiferromagnetic layer. However, an exchange coupling magnetic field is decreased depending upon the conditions of crystal grain boundaries. Therefore, in ... | 03/27/2007 |
| 7186470 | Use of greater than about 15 angstrom thick coupling layer in AP-tab magnetic head A magnetic head that uses a thick AP coupling layer in an AP-tab structure. The head includes a free layer having an active area and tab regions on opposite sides of the active area. An antiparallel (AP) coupling layer is formed above the free layer. In one embodime... | 03/06/2007 |
| 7180716 | Fabrication method for an in-stack stabilized synthetic stitched CPP GMR head A method for fabricating a stitched CPP synthetic spin-valve sensor with in-stack stabilization of its free layer. The method can also be applied to the formation of a stitched tunneling magnetoresistive sensor. The free layer is strongly stabilized by magnetostatic... | 02/20/2007 |
| 7163755 | Magneto-resistive element The present invention provides a vertical current-type magneto-resistive element. The element includes an intermediate layer and a pair of magnetic layers sandwiching the intermediate layer, and at least one of a free magnetic layer and a pinned magnetic layer is a ... | 01/16/2007 |
| 7141314 | CPP GMR and magnetostriction improvement by laminating CoFe free layer with thin FeColayers A current-perpendicular-to-plane (CPP) giant magnetoresistive (GMR) sensor of the synthetic spin valve type and its method of formation are disclosed, the sensor including a novel laminated free layer having ultra-thin (less than 3 angstroms thickness) laminas of Fe... | 11/28/2006 |
| 7118814 | Apparatus and method for step-stabilization of GMR-based read sensors An apparatus and method for step-stabilization of giant magnetoresistive (GMR) based read heads are provided. With the apparatus and method, gratings or periodic structures are generated in the underlayer of the magnetoresistive (MR) sensor stack and the edges, or â... | 10/10/2006 |
| 7094480 | Magnetic field sensor using magnetoresistance and method for making same The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (101), an insulating layer ( | 08/22/2006 |
| 7072152 | Magnetic head and magnetic reproducing system There is provided a magnetoresistance effect element capable of precisely defining the active region in a CPP type MR element and of effectively suppressing and eliminating the influence of a magnetic field due to current from an electrode, and a magnetic head and m... | 07/04/2006 |
| 7050273 | Bottom spin valve sensor having a lead overlay (LOL) structure fabricated thereon A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layer... | 05/23/2006 |
| 7045224 | Magnetic detecting element having antiferromagnetic film having predetermined space in track width direction and method for manufacturing the same The present invention provides a magnetic detecting element including a pinned magnetic layer and a first antiferromagnetic layer which constitutes an exchange coupling film and the structures of which are optimized for properly pinning magnetization of the pinned m... | 05/16/2006 |
| 7042684 | Structure/method to form bottom spin valves for ultra-high density Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which i... | 05/09/2006 |
| 7029771 | Magnetic sensor having free layer additionally provided with magnetic anisotropy by shape anisotropy An intermediate region is formed at a central portion of an element in a track width direction, and an antiferromagnetic layer is not provided at the intermediate region. Accordingly, a sense current can be prevented from being shunted to the intermediate region, an... | 04/18/2006 |
| 7029770 | Exchange-coupled film, spin valve film, thin film magnetic head, magnetic head apparatus, and magnetic recording/reproducing apparatus An exchange-coupled film has a ferromagnetic layer sandwich comprising a first ferromagnetic layer containing a ferromagnetic material of the body-centered cubic structure and a pair of second ferromagnetic layers containing a ferromagnetic material of the face-cent... | 04/18/2006 |
