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| Number | Title | Issue Date |
| 7931976 | Magnetic recording element A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer a... | 04/26/2011 |
| 7510787 | Magneto-resistance effect element and thin-film magnetic head An MR element has a pinned layer, a spacer layer, and a free layer successively stacked in the order named. The free layer includes a Heusler alloy layer in at least a region thereof adjacent to the spacer layer. An oxide is distributed as sea-islands in the interfa... | 03/31/2009 |
| 7407902 | Bismuth glass composition, and magnetic head and plasma display panel including the same as sealing member A Bismuth glass composition including 0.5 to 14 wt % of SiO2, 3 to 15 wt % of B2O3, 4 to 22 wt % of ZnO, 55 to 90 wt % of Bi2O3 and 4 wt % or less of Al2O3, and further including 5 wt % or ... | 08/05/2008 |
| 7390584 | Spin dependent tunneling devices having reduced topological coupling A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic ferromagnetic material on one side. A compensation thin-film of an anisotropic fe... | 06/24/2008 |
| 7372116 | Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell. ... | 05/13/2008 |
| 7369373 | CPP GMR with hard magnet in stack bias layer A current perpendicular to plane magnetorestive sensor having an improved in stack biasing. An amorphous layer breaks the structure allowing a desire crystolographic structure in an in stack bias layer that provides greatly increased coercivity (Hc) in the bias laye... | 05/06/2008 |
| 7365948 | Exchange-coupled film, method for making exchange-coupled film, and magnetic sensing element including exchange-coupled film An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be sm... | 04/29/2008 |
| 7362546 | Spin-valve magnetoresistive element having fixed magnetic layer of epitaxal laminate including magnetic layer and nonmagnetic layer A fixed magnetic layer contains a first magnetic layer formed on a non-magnetic metal layer. The non-magnetic metal layer is composed of an X—Mn alloy (where X is selected from Pt, Pd, Ir, Rh, Ru, Os, Ni, and Fe). While atoms forming the first magnetic layer and a... | 04/22/2008 |
| 7357995 | Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel b... | 04/15/2008 |
| 7354664 | Magnetically soft, high saturation magnetization laminate of iron-cobalt-nitrogen and iron-nickel for perpendicular media underlayers A magnetic disk has a soft magnetic underlayer comprising a first layer containing NiFe having a concentration of iron that is at least thirty percent and not more than seventy percent; a second layer that adjoins the first layer and contains FeCoN having a concentr... | 04/08/2008 |
| 7352542 | Enhanced spin-valve sensor with engineered overlayer formed on a free layer A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed o... | 04/01/2008 |
| 7352541 | CPP GMR using Fe based synthetic free layer A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having an antiparallel coupled free layer including a first magnetic layer of Fe and a second magnetic layer of FeXN, where X can be Al or Ta. The first and second magnetic layers of the free... | 04/01/2008 |
| 7351483 | Magnetic tunnel junctions using amorphous materials as reference and free layers Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element s... | 04/01/2008 |
| 7349186 | Magnetic read head A TMR head capable of reconciling high output with high band width is implemented. To that end, two multilayered films each comprised of an insulating layer and a ferromagnetic layer are formed at different locations on an electrode layer, and a current is caused to... | 03/25/2008 |
| 7333306 | Magnetoresistive spin valve sensor with tri-layer free layer A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also i... | 02/19/2008 |
| 7333303 | Magnetoresistive device supplying sense current thereto dependent upon a relationship existent between the thickness of the fixed layer and its magnetization Provided is a magnetoresistive device capable of stably maintaining sufficient output characteristics even under a higher temperature environment while responding to a demand for a higher recording density. The magnetoresistive device comprises an MR film including ... | 02/19/2008 |
| 7327540 | Hard biased materials for recording head applications A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and d... | 02/05/2008 |
| 7319322 | Deformation sensor and method for detecting a deformation A sensor has a substrate having a mechanically deformable region, a magnetostrictive spin-valve sensor element being arranged to detect a mechanical deformation of the mechanically deformable region. On the substrate, there is a device for generating a controllable ... | 01/15/2008 |
| 7313856 | Method of manufacturing a magnetoresistive sensor with a thin antiferromagnetic layer for pinning antiparallel coupled tabs A manufacturing method for a spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises forming a ferromagnetic bias layer ant... | 01/01/2008 |
| 7313015 | Storage element and memory including a storage layer a magnetization fixed layer and a drive layer A memory includes a storage element (10) composed of a storage layer (5) for holding information with the magnetization state of a magnetic material, a magnetization fixed layer (3) provided relative to the storage layer (5) through an in... | 12/25/2007 |
| 7300711 | Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magn... | 11/27/2007 |
| 7295409 | CPP giant magnetoresistive element with particular bulk scattering coefficient A CPP giant magnetoresistive element includes a multilayer film including a lower pinned magnetic layer having a laminated ferrimagnetic structure including a lower first pinned magnetic sublayer, a lower nonmagnetic intermediate sublayer, and a lower second pinned ... | 11/13/2007 |
| 7291781 | Complex oxide having n-type thermoelectric characteristics The present invention provides a complex oxide having a composition represented by the formula La1−xMxNiO2.7−3.3 or (La1−xMx)2NiO3.6−4.4 (wherein M is at least one element selected ... | 11/06/2007 |
| 7289303 | Spin valve sensors having synthetic antiferromagnet for longitudinal bias Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed m... | 10/30/2007 |
| 7284315 | Method of forming a magnetic tunnel junction A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in wh... | 10/23/2007 |
| 7274080 | MgO-based tunnel spin injectors A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a... | 09/25/2007 |
| 7273667 | Longitudinal multi-layer magnetic recording medium A magnetic recording medium capable of attaining high in-plane recording density of 100 Mbits or more per 1 mm2 is provided. Magnetic recording medium is provided in which underlayers, a first magnetic layer, a first intermediate layer, a second magnetic ... | 09/25/2007 |
| 7270896 | High performance magnetic tunnel barriers with amorphous materials A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel baffler. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous.... | 09/18/2007 |
| 7268979 | Head with thin AFM with high positive magnetostrictive pinned layer The present invention overcomes the drawbacks and limitations described above by providing a magnetic head having a free layer, an antiferromagnetic layer spaced apart from the free layer, and an antiparallel (AP) pinned layer structure positioned between the free l... | 09/11/2007 |
| 7259940 | Thin-film magnetic head, head gimbal assembly, and hard disk drive A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film ... | 08/21/2007 |
| 7248447 | High Hc pinned self-pinned sensor A self pinned magnetoresistive sensor having an anitparallel coupled pinned layer structure including a high coercivity (high Hc) layer of TbCo. ... | 07/24/2007 |
| 7248448 | Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In th... | 07/24/2007 |
| 7248449 | Magnetoresistive read sensor with reduced effective shield-to-shield spacing A magnetoresistive read sensor includes a first shield layer and a first gap layer over the first shield layer. The read sensor further includes a spin-valve stack over the first gap layer. The spin-valve stack includes a seed layer over the first gap layer. At leas... | 07/24/2007 |
| 7241515 | Electrode layer for thin-film magnetic heads An electrode layer for thin-film magnetic heads includes a Ta base sub-layer, an Au sub-layer functioning as a main conductive sub-layer, and a protective sub-layer, those sub-layers being disposed in that order. An Au electrode seed sub-layer containing any one of ... | 07/10/2007 |
| 7241514 | Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the t... | 07/10/2007 |
| 7236333 | Domain wall free shields of MR sensors A magnetic reader of the present invention comprises an MR sensor shielded by a magnetic shield including single domain soft magnetic materials. The domain wall free magnetic shield includes an unbiased soft magnetic layer and a biased soft magnetic layer separated ... | 06/26/2007 |
| 7234228 | Method of fabricating novel seed layers for fabricating spin valve heads A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there ... | 06/26/2007 |
| 7235969 | Thin-film structure magnetizable bead detector A ferromagnetic thin-film based magnetic field detection system used for detecting the presence of selected molecular species. A magnetic field sensor supported on a substrate has a binding molecule layer positioned on a side thereof capable of selectively binding t... | 06/26/2007 |
| 7230802 | Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device A method and apparatus for providing magnetostriction control in a free layer of a magnetic memory device is disclosed. The same target compositions for the free layers may be used, but the relative thickness values are modified to obtain a desired magnetostriction ... | 06/12/2007 |
| 7229706 | Magnetic detecting element having pinned magnetic layers disposed on both sides of free magnetic layer The present invention provides a magnetic detecting element capable of increasing a difference between the ease of a conduction electron flow in a low-resistance state and the ease of a conduction electron flow in a high-resistance state to increase a resistance cha... | 06/12/2007 |
