Class 428/811.1 - Having tunnel junction effect

Subclass of Class 428 - Stock material or miscellaneous articles
Definition: Subject matter in which the laminate has at least one
No. of patents: 27
Last issue date: 02/28/2012

Number	Title	Issue Date
8124253	Tunneling magnetic sensing element including MGO film as insulating barrier layer A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer...	02/28/2012
8043732	Memory cell with radial barrier Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness,...	10/25/2011
7939188	Magnetic stack design A magnetic stack having a free layer having a switchable magnetization orientation, a reference layer having a pinned magnetization orientation, and a barrier layer therebetween. The stack includes an annular antiferromagnetic pinning layer electrically isolated fro...	05/10/2011
7935435	Magnetic memory cell construction A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction c...	05/03/2011
7914915	Highly charged ion modified oxide device and method of making same A highly charged ion modified device is provided that includes a first metal layer or layers deposited on a substrate and an insulator layer, deposited on the first metal layer, including a plurality of holes therein produced by irradiation thereof with highly charg...	03/29/2011
7547480	Magnetic tunnel junction pressure sensors and methods An integrated circuit device is provided which comprises a substrate, a conductive line configured to experience a pressure, and a magnetic tunnel junction (“MTJ”) core formed between the substrate and the current line. The conductive line is configured to move ...	06/16/2009
7514160	Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001) By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. T...	04/07/2009
7494724	Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory A method of manufacturing a magnetoresistance effect element includes forming an insulating layer on a first ferromagnetic layer, forming an aperture reaching the first ferromagnetic layer by thrusting a needle from the top surface of the insulating layer, and depos...	02/24/2009
7372674	Magnetic tunnel transistor with high magnetocurrent and stronger pinning A magnetic tunnel transistor (MTT) having a pinned layer that is extended in a stripe height direction and is exchange coupled with an antiferromagnetic (AFM) layer in the extended portion outside of the active area of the sensor. Exchange coupling only the extended...	05/13/2008
7369373	CPP GMR with hard magnet in stack bias layer A current perpendicular to plane magnetorestive sensor having an improved in stack biasing. An amorphous layer breaks the structure allowing a desire crystolographic structure in an in stack bias layer that provides greatly increased coercivity (Hc) in the bias laye...	05/06/2008
7357995	Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel b...	04/15/2008
7355824	Magnetoresistive effect element and magnetic memory having the same The present invention relates to a magnetoresistive effect element, which has a large MR ratio, excellent thermostability and a small switching magnetic field even if its size is decreased, and a magnetic memory using the magnetoresistive effect element. The magneto...	04/08/2008
7351483	Magnetic tunnel junctions using amorphous materials as reference and free layers Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element s...	04/01/2008
7309875	Nanocrystal protective layer for crossbar molecular electronic devices A molecular device is provided. The molecular device comprises a junction formed by a pair of crossed electrodes where a first electrode is crossed by a second electrode at a non-zero angle and at least one connector species including at least one switchable moiety ...	12/18/2007
7300711	Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magn...	11/27/2007
7284315	Method of forming a magnetic tunnel junction A method of forming a magnetic tunnel junction memory element and the resulting structure are disclosed. A magnetic tunnel junction memory element comprising a thick nonmagnetic layer between two ferromagnetic layers. The thick nonmagnetic layer has an opening in wh...	10/23/2007
7270896	High performance magnetic tunnel barriers with amorphous materials A magnetic tunneling element is constructed from a MgO or Mg—ZnO tunnel barrier and an amorphous magnetic layer in proximity with the tunnel baffler. The amorphous magnetic layer includes Co and at least one additional element selected to make the layer amorphous....	09/18/2007
7265950	Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a throu...	09/04/2007
7252852	Mg-Zn oxide tunnel barriers and method of formation ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnes...	08/07/2007
7241514	Magneto-resistive device, and magnetic head, head suspension assembly and magnetic disk apparatus using magneto-resistive device A magneto-resistive device is provided for contributing to a higher MR ratio and a reduced cleaning time for cleaning the surface of a cap layer. In the magneto-resistive device, a cap layer which serves as a protection layer is formed on a free layer which is the t...	07/10/2007
7220498	Tunnel magnetoresistance element By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. T...	05/22/2007
7220482	Aligned fine particles, method for producing the same and device using the same The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate i...	05/22/2007
7204013	Method of manufacturing a magnetoresistive sensor In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and second magnetic leads. Finally, the magnetic and electrical conductivity o...	04/17/2007
7196386	Memory element and memory device A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a...	03/27/2007
7183893	TMR sensor with oxidized alloy barrier layer and method for forming the same A tunneling magnetoresistive stack includes a first ferromagnetic layer, a tunnel barrier layer on the first ferromagnetic layer, and a second ferromagnetic layer on the tunnel barrier layer. The tunneling magnetoresistive stack exhibits a negative exchange coupling...	02/27/2007
7020010	Magnetic storage apparatus using ferromagnetic tunnel junction devices A magnetic storage apparatus provided using ferromagnetic tunnel junction devices is constituted by forming the ferromagnetic tunnel junction device by laminating a fixed magnetization layer and a free magnetization layer on top and back surfaces of a tunnel barrier...	03/28/2006
7001680	Low resistance magnetic tunnel junction structure The present disclosure describes magnetic tunnel junction (MTJ) devices and systems involving the use of diffusion components selected to alter the device properties. The diffusion components migrate from one layer of the MTJ structure to the tunneling barrier layer...	02/21/2006

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Class 428/811.1 - Having tunnel junction effect