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| Number | Title | Issue Date |
| 7242044 | Compositions for thin-film capacitance device, high-dielectric constant insulating film, thin-film capacitance device, and thin-film multilayer capacitor A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film ca... | 07/10/2007 |
| 7229675 | Protective coating method for pieces made of heat resistant alloys The invention relates to metallurgy and mechanical engineering, in particular to the development of methods for providing metallic pieces with protective coatings with a view to improving the performance characteristics thereof. In accordance with the inventive meth... | 06/12/2007 |
| 7204971 | Shaped microcomponents via reactive conversion of biologically-derived microtemplates The present invention is focused on a revolutionary, low-cost (highly-scaleable) approach for the mass production of three-dimensional microcomponents: the biological reproduction of naturally-derived, biocatalytically-derived, and/or genetically-tailored three-dime... | 04/17/2007 |
| 7160820 | Method of preparing oxide crystal film/substrate composite and solution for use therein There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal... | 01/09/2007 |
| 7083869 | Methods of forming LaNiOconductive layers, ferro-electric devices with LaNiOlayers, and precursor formation solutions Methods of forming lanthanum nickel oxide (LaNiO3) layers with precursor formation solutions are disclosed, along with devices made from such solutions. Also disclosed are methods for making the formation solutions using lanthanum, nickel, and a diol. The... | 08/01/2006 |
| 7067104 | Shaped microcomponent via reactive conversion of biologically-derived microtemplates The present invention is focused on a revolutionary, low-cost (highly-scaleable) approach for the mass production of three-dimensional microcomponents: the biological reproduction of naturally-derived, biocatalytically-derived, and/or genetically-tailored three-dime... | 06/27/2006 |
| 7060322 | Method of making heat treatable coated article with diamond-like carbon (DLC) coating A method of making a coated article (e.g., window unit), and corresponding coated article are provided. A layer of or including diamond-like carbon (DLC) is formed on a glass substrate, preferably over at least one barrier layer. Then, a protective layer is formed o... | 06/13/2006 |
| 7046719 | Soft handoff between cellular systems employing different encoding rates A receiver (200) is provided receiving signals from differing base stations (BTSA and BTSB). The signal from BTSA is encoded using a first rate convolutional encoder while the signal transmitted from BTSB is encoded... | 05/16/2006 |
| 7037770 | Method of manufacturing strained dislocation-free channels for CMOS A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. An SiGe layer is grown in the channel of the nFET channel and a Si:C layer is grown in the pFET channel. The SiGe and Si:C l... | 05/02/2006 |
| 7033679 | Metal film and metal film-coated member, metal oxide film and metal oxide film-coated member, thin film forming apparatus and thin film forming method for producing metal film and metal oxide film The metal film of the present invention is a dense film of a single crystal that has very low surface roughness and very good crystal orientation because an arithmetic mean roughness of the surface is not larger than 2 nm and a (111) peak intensity of X-ray diffract... | 04/25/2006 |
| 7011898 | Method of joining ITM materials using a partially or fully-transient liquid phase A method of forming a composite structure includes: (1) providing first and second sintered bodies containing first and second multicomponent metallic oxides having first and second identical crystal structures that are perovskitic or fluoritic; (2) providing a join... | 03/14/2006 |
| 7005198 | Phosphor thin film, preparation method, and EL panel A phosphor thin film is provided that has a high luminance, a satisfactory color purity sufficient to eliminate a need for filters, and a long luminance life. The phosphor thin film can be adapted to suit each element of red, green and blue in full color EL panels. ... | 02/28/2006 |
| 6997014 | Coatings for gemstones and other decorative objects The invention provides a decorative object comprising a transparent or translucent substrate having a body and at least one surface bearing a thin film coating. The coating imparts in the substrate a body color that appears substantially constant at different angles... | 02/14/2006 |
| 6972051 | Bulk single crystal gallium nitride and method of making same A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; ... | 12/06/2005 |
| 6872479 | Coated optics to improve durability The invention is directed to a coated metal fluoride crystals that are resistant to laser-induced damage by a below 250 nm UV laser beam; methods of making such coated crystals, and the use of such coated crystals. The method includes the steps of providing an uncoa... | 03/29/2005 |
| 6872251 | Method for manufacturing single crystal ceramic powder, and single crystal ceramic powder, composite material, and electronic element A method for manufacturing single crystal ceramic powder is provided. The method includes a powder supply step for supplying powder consisting essentially of ceramic ingredients to a heat treatment area with a carrier gas, a heat treatment step for heating the powde... | 03/29/2005 |
| 6844084 | Spinel substrate and heteroepitaxial growth of III-V materials thereon A spinel composition of the invention includes a monocrystalline lattice having a formula Mg1-wαwAlx-yβyOz, where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than ... | 01/18/2005 |
| 6824897 | Method for producing bonded articles, bonded articles and bonding agents A method for producing a bonded article composed of a first substrate, a second substrate, and a bonding layer through which the first and second substrates are bonded to one another includes the steps of interposing a water-based bonding agent between the first and... | 11/30/2004 |
| 6746777 | Alternative substrates for epitaxial growth A substrate including a base substrate, an interfacial bonding layer disposed on the base substrate, and a thin film adaptive crystalline layer disposed on the interfacial bonding layer. The interfacial bonding layer is solid at room temperature, and is in liquid-li... | 06/08/2004 |
| 6716544 | Coated sinter of cubic-system boron nitride A coated cubic boron nitride (cBN) sintered body most suitable for a cutting tool having excellent resistance to wear and heat in the high-speed cutting of steel has been developed. The sintered body comprises (a) a base material made of a sintered body comprising a... | 04/06/2004 |
| 6667672 | Compact high power analog electrically controlled phase shifter A high power ferrite microwave phase shifter that is both compact and low cost. The ferrite phase shifter includes a waveguide having a first cylinder and a second cylinder, the radius of the second cylinder being less than the radius of the first cylinde... | 12/23/2003 |
| 6641938 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the crystalline direction of the substrate. The resultant sili... | 11/04/2003 |
| 6613463 | Superconducting laminated oxide substrate and superconducting integrated circuit A superconducting laminated oxide substrate, which comprises a laminate a layer of a superconducting oxide crystal substrate made of a superconducting oxide single crystal or a superconducting oxide polycrystal and a layer of a reinforcing crystal substra... | 09/02/2003 |
| 6593016 | Group III nitride compound semiconductor device and producing method thereof A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X... | 07/15/2003 |
| 6558822 | Cr-containing titanium nitride film The invention aims to provide a hard film which is improved in high-temperature corrosion resistance without impairing high sliding characteristics (wear resistance, low frictional coefficient) inherent in a titanium nitride thin film and which is suitabl... | 05/06/2003 |
| 6534207 | Process for producing amorphous material containing single crystal or polycrystal and material produced Pulsed light is irradiated to an amorphous base material, to produce therein one or more single crystals or polycrystals having nonlinear characteristic advantageous for light communication and laser technique. An external field such as electric field or ... | 03/18/2003 |
| 6531235 | Non-c-axis oriented bismuth-layered perovskite ferroelectric structure epitaxially grown on buffered silicon A structure containing a ferroelectric material comprises a substrate comprising silicon, a buffer layer formed on the substrate, and a non-c-axis-oriented, electrically-conductive template layer formed on the buffer layer. The template layer comprises a ... | 03/11/2003 |
| 6479173 | Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides or nitrides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides or nitrides, the interface ... | 11/12/2002 |
| 6465825 | Thin film multilayered structure, ferroelectric thin film element, and manufacturing method of the same A thin film multilayered structure comprises a single crystal Si substrate; a MgO buffer layer epitaxially grown on said single crystal Si substrate; and a metallic thin film made of Ir or Rh epitaxially grown on said MgO buffer layer.... | 10/15/2002 |
| 6455178 | Exchange coupling film and magnetoresistive element An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film... | 09/24/2002 |
| 6432546 | Microelectronic piezoelectric structure and method of forming the same A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from... | 08/13/2002 |
| 6426156 | Magnetostatic wave device A magnetic garnet single crystal film used for a magnetostatic wave device has a Pb content in the range of from more than zero to about 4,000 ppm by weight.... | 07/30/2002 |
| 6406795 | Compliant universal substrates for optoelectronic and electronic devices A compliant substrate for the formation of semiconductor devices includes a crystalline base layer and a thin-film crystalline layer on and loosely bonded to the base layers. The thin-film layer has a high degree of lattice flexibility. A compliant substr... | 06/18/2002 |
| 6368733 | ELO semiconductor substrate A semiconductor substrate comprising a single crystal substrate having thereon a mask and a Group III-V compound semiconductor epitaxially grown layer, said mask comprising an insulating material thin film or high melting point metal thin film having a pl... | 04/09/2002 |
| 6344265 | Coated cutting insert The present invention relates to a coated body such as a cutting tool insert comprising a wear resistant coating and a cemented carbide body particularly useful for the machining of cast iron parts by turning, milling or drilling at high speeds. The cemen... | 02/05/2002 |
| 6329088 | Silicon carbide epitaxial layers grown on substrates offcut towards <1100> A silicon carbide epitaxial film, grown on an offcut surface of a SiC crystalline substrate of hexagonal crystal form, having an offcut angle of from about 6 to about 10 degrees, toward the crystalline direction of the substrate. The resultant sili... | 12/11/2001 |
| 6299991 | Selective growth of ferromagnetic films for magnetic memory, storage-based devices A device and a method of forming the device, includes selective area deposition of a ferromagnetic material on a substrate. The substrate surface is partially covered with material having a crystal structure having at least one symmetry relation with the ... | 10/09/2001 |
| 6258459 | Multilayer thin film The first object of the invention is to provide means that enables a perovskite oxide thin film having (100) orientation, (001) orientation or (111) orientation to be easily obtained, and the second object of the invention is to provide a multilayer thin ... | 07/10/2001 |
| 6251533 | Ceramic laminate material Ceramic laminate material comprising at least one dense layer of a perovskite material and at least one layer of a dense non-perovskite material and/or at least one layer of a dense superstructural perovskite material.... | 06/26/2001 |
| 6248459 | Semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon A semiconductor structure comprises a silicon substrate (10), one or more layers of single crystal oxides (26), and an interface (14) between the silicon substrate and the one or more layers of single crystal oxides, the interface manufactured with a crys... | 06/19/2001 |
