Celebrity Inventors
Glam girl Heddy Lamar may have used her good looks to good effect on the silver screen, but she put her smarts to better use as an inventor. During World War II, she co-patented a frequency-switching system for torpedo guidance that was considered years ahead of its time.
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| Number | Title | Issue Date |
| 8097377 | Development of high energy surfaces on stainless steels for improved wettability A bi-polar plate is provided for a fuel cell stack. The bi-polar plate has improved surface wettability. The bi-polar plate includes a body including at least approximately ninety percent by weight of a metal and defining at least one flow channel. At least about 0.... | 01/17/2012 |
| 7875365 | Recordable optical recording media An optical recording medium is provided with inorganic bi-layer films that were prepared by magnetic sputtering. A first recording layer containing an element selected from Si or Ge, and a second recording layer contacts with the first recording layer and containing... | 01/25/2011 |
| 7867627 | Process for the modification of substrate surfaces through the deposition of amorphous silicon layers followed by surface functionalization with organic molecules and functionalized structures Functionalized substrates and method of passivating the surface of a substrate to improve the surface by imparting desirable surface properties to improve the performance of a surface, the method steps including exposing the substrate to a chemical vapor deposition ... | 01/11/2011 |
| 7442444 | Bond coat for silicon-containing substrate for EBC and processes for preparing same An article comprising a silicon-containing substrate, a silicide-containing bond coat layer overlying the substrate, and typically an environmental barrier coating overlaying the bond coat layer. An article is also provided wherein the environmental barrier coating ... | 10/28/2008 |
| 7354651 | Bond coat for corrosion resistant EBC for silicon-containing substrate and processes for preparing same An article comprising a silicon-containing substrate, a silicide-containing bond coat layer overlying the substrate, and an environmental barrier coating (EBC) overlying the bond coat layer, wherein the EBC comprises a corrosion resistant outer layer comprising a co... | 04/08/2008 |
| 7351480 | Tubular structures with coated interior surfaces Tubular structures having aspect ratios of at least about 3 and comprising interior surfaces comprising substantially uniform coatings generated from a gaseous precursor material. ... | 04/01/2008 |
| 7338886 | Implantation-less approach to fabricating strained semiconductor on isolation wafers A method of fabricating a semiconductor substrate includes forming a buffer layer on the substrate. A Ge containing layer, such as a SiGe is formed over the buffer layer. The buffer layer includes defects at the interface of the substrate and buffer layer. The subst... | 03/04/2008 |
| 7323408 | Metal barrier cap fabrication by polymer lift-off A new method is provided for the creation of copper interconnects. A pattern of copper interconnects is created, a protective layer of semiconductor material is deposited over the surface of the created copper interconnects. The protective layer is patterned and etc... | 01/29/2008 |
| 7322306 | Apparatus for providing resistance to cargo spills A means for transportation is disclosed, where the means includes a ballistic protection structures associated with a flexible bladder cargo isolation system. A ballistic protection system for protecting means of transportation from ballistic attacks is also disclos... | 01/29/2008 |
| 7310454 | Photonic bandgap modulator, amplifier, demux, and TDM devices An optical device includes at least two photonic bandgap crystal (PBG) stacks that are each comprised of alternating layers of high and low index materials. A defect region is formed in a cavity region between the at least two photonic bandgap crystal stacks so as t... | 12/18/2007 |
| 7282458 | Low K and ultra low K SiCOH dielectric films and methods to form the same Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water v... | 10/16/2007 |
| 7261957 | Multilayer system with protecting layer system and production method A multilayer system and its production. Multilayer systems, such as those used as mirrors in the extreme ultraviolet wavelength range, suffer contamination or oxidation during storage in air and in long-time operation, i.e. when exposed to EUV radiation in a vacuum ... | 08/28/2007 |
| 7258931 | Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination Semiconductor wafers utilize asymmetric edge profiles (EP) to facilitate higher yield semiconductor device processing. These edge profiles are configured to reduce the volume of thin film residues that may form on a top surface of a semiconductor wafer at locations ... | 08/21/2007 |
| 7254294 | Dispersion compensating filters A filter device provides for the modification of the group delay of an optical signal without attenuation of adjacent optical signals in a WDM optical communication systems. The filters devices may be combined and used in various methods to modify the GD and dispers... | 08/07/2007 |
| 7253522 | Integrated capacitor for RF applications with Ta adhesion layer A precision RF passive component including: a silicon substrate; a first dielectric layer deposited above the silicon substrate; a first metal layer formed above the first dielectric layer; a second dielectric layer formed above the first metal layer; and a second m... | 08/07/2007 |
| 7250359 | Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer.... | 07/31/2007 |
| 7238589 | In-place bonding of microstructures A method for bonding microstructures to a semiconductor substrate using attractive forces, such as, hydrophobic, van der Waals, and covalent bonding is provided. The microstructures maintain their absolute position with respect to each other and translate vertically... | 07/03/2007 |
| 7232737 | Treatment of a removed layer of silicon-germanium A method of forming a structure that includes a removed layer taken from a donor wafer donor wafer that includes a first layer of Si1-xGex and a second layer of Si1-yGey. The method includes implanting atomic species into ... | 06/19/2007 |
| 7221827 | Tunable dispersion compensator An optical dispersion compensator including: a spacer element having a top surface and a bottom surface; a thin film, multi-layer mirror formed on the top surface of the spacer element, the thin film mirror having a thermally tunable reflectivity; a highly reflectiv... | 05/22/2007 |
| 7217949 | Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI) A semiconductor structure for use as a template for forming high-performance metal oxide semiconductor field effect transistor (MOSFET) devices is provided. More specifically, the present invention provides a structure that includes a SiGe-on-insulator substrate inc... | 05/15/2007 |
| 7217668 | Gate technology for strained surface channel and strained buried channel MOSFET devices A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si1-xGex layer on a substrate, a strained channel layer on the relaxed Si1-xGex layer... | 05/15/2007 |
| 7211144 | Pulsed nucleation deposition of tungsten layers A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereaf... | 05/01/2007 |
| 7208043 | Silicon semiconductor substrate and preparation thereof A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a sili... | 04/24/2007 |
| 7201803 | Valve control system for atomic layer deposition chamber A valve control system for a semiconductor processing chamber includes a system control computer and a plurality of electrically controlled valves associated with the processing chamber. The system further includes a programmable logic controller in communication wi... | 04/10/2007 |
| 7199928 | Optical element, optical drop module, optical add-drop module, and tunable light source An optical element has a structure in that a first mirror stack layer is formed on a substrate. A first transparent conductive film, a conductive buffer layer, a spacer layer having a primary or secondary electrooptic effect, a conductive buffer layer and a second t... | 04/03/2007 |
| 7196400 | Semiconductor device with enhanced orientation ratio and method of manufacturing same An object is to enhance the orientation ratio of a crystalline semiconductor film obtained by crystallizing an amorphous semiconductor film while using as a substrate a less-heat-resistive material such as glass thereby providing a semiconductor device using a cryst... | 03/27/2007 |
| 7190853 | Tunable chromatic dispersion compensation A system for dispersion compensation is provided including a plurality of optical cavities with each including a specific resonant frequency and resonant linewidth. At least one coupling element interconnects the optical cavities. The at least one coupling element d... | 03/13/2007 |
| 7183198 | Method for forming a hardmask employing multiple independently formed layers of a capping material to reduce pinholes A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon layer. By independently forming several layers of PECVD material, at leas... | 02/27/2007 |
| 7176112 | Non-thermal annealing with electromagnetic radiation in the terahertz range of doped semiconductor material A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed ... | 02/13/2007 |
| 7173759 | Monochromator mirror for the EUV-spectral range The invention relates to a monochromator mirror for the EUV-spectral range, provided with a layer arrangement placed on a substrate, comprising a periodic sequence of two individual layers (A, B) made of different material forming a period having a thickness d in th... | 02/06/2007 |
| 7161894 | Optical recording article Optical recording articles, such as tapes, and methods of making and using such articles are disclosed. ... | 01/09/2007 |
| 7157795 | Composite tantalum nitride/tantalum copper capping layer Electromigration and stress migration of Cu interconnects are significantly reduced by forming a composite capping layer comprising a layer of tantalum nitride on the upper surface of the inlaid Cu and a layer of α-Ta on the titanium nitride layer. Embodiments incl... | 01/02/2007 |
| 7154372 | Micromechanical flow sensor with tensile coating A sensor integrated on a semiconductor device (1), in particular a flow sensor, comprises a measuring element (2) on a membrane (5). In order to prevent a buckling of the membrane (5) a tensile coating (9) is applied. The coating c... | 12/26/2006 |
| 7152047 | System and method for production and authentication of original documents A system and method for authenticating documents and content thereof. A counterfeit resistant document recording medium is provided, having thereon a predefined unique document identifier and at least one security feature. The recording medium is thereafter imprinte... | 12/19/2006 |
| 7149377 | Solar tunable filter assembly A solar filter assembly combines a high-precision Fabry-Perot etalon with a variety of conditioning filters judiciously selected to effectively block completely all radiation except for the spectral line of interest. In addition, a tuning mechanism is provided to pr... | 12/12/2006 |
| 7145847 | Annealed optical information recording medium and optical information recording/reproducing apparatus for the same A high density optical information recording medium comprises a substrate having rows of land and groove and a recording layer formed on the substrate. Each of the rows of land or groove includes at least two recording tracks separated by a denatured region produced... | 12/05/2006 |
| 7141318 | High density longitudinal recording media Magnetic recording media having improved magnetic properties such as an improved signal-to-noise ratio. The recording media includes a magnetic recording layer and an underlayer disposed beneath the magnetic recording layer. The underlayer is a Cr-based alloy such a... | 11/28/2006 |
| 7141115 | Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers A method of fabricating a high-quality relaxed SiGe-on-insulator substrate material is provided in which a prefabricated silicon-on-insulator substrate is first exposed to an unstrained Ge-containing source and then heated (annealed/oxidized) to cause Ge diffusion a... | 11/28/2006 |
| 7138342 | Process of maintaining hybrid etch Process for combined chemical cleaning and etching of parts made of aluminum and/or aluminum alloys including: (a) providing a cleaning and etching solution including 5–30 grams/liter of phosphoric acid; 5–30 grams/liter of hydrogen fluoride; 120–220 grams/lit... | 11/21/2006 |
| 7135398 | Reliable low-k interconnect structure with hybrid dielectric An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of ... | 11/14/2006 |
