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| Number | Title | Issue Date |
| 7927713 | Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about ... | 04/19/2011 |
| 7879455 | High-temperature solder, high-temperature solder paste and power semiconductor using same The present invention intends to provide a power semiconductor device using a high-temperature lead-free solder material, the high-temperature lead-free solder material having the heat resistant property at 280° C. or more, and the bondability at 400° C. or less, ... | 02/01/2011 |
| 7722962 | Solder foil, semiconductor device and electronic device A solder foil formed from a material comprising particles of Cu, etc. as metal particles and Sn particles as solder particles by rolling is suitable for solder bonding at a high temperature side in temperature-hierarchical bonding, and semiconductor devices and elec... | 05/25/2010 |
| 7560172 | Low voltage CMOS structure with dynamic threshold voltage A method for dynamically varying a threshold voltage of a complimentary metal oxide semiconductor (CMOS) includes providing a substrate pickup formed a semiconductor material type which is complimentary to the semiconductor material type of a well thereof, so as to ... | 07/14/2009 |
| RE40725 | Magnetic body formed by quantum dot array using non-magnetic semiconductor A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points such that electrons can transfer between neighboring quantum dots and t... | 06/09/2009 |
| 7416789 | Refractory metal substrate with improved thermal conductivity A substrate for semiconductor and integrated circuit components including: a core plate containing a Group VIB metal from the periodic table of the elements and/or an anisotropic material, having a first major surface and a second ... | 08/26/2008 |
| 7413974 | Copper-metallized integrated circuits having electroless thick copper bond pads A metal structure (100) for a contact pad of a semiconductor, which has interconnecting traces of a first copper layer (102). The substrate is protected by an insulating overcoat (104). The first copper layer of first thickness and first crystal... | 08/19/2008 |
| 7390568 | Semiconductor nanocrystal heterostructures having specific charge carrier confinement A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantiall... | 06/24/2008 |
| 7361963 | Optical film An optical film which enables desired optical properties to be obtained easily, and enables the durability to be improved. A metal film 32 is formed on an inner major surface 12a of a glass substrate 12. A plurality of first island struct... | 04/22/2008 |
| 7361533 | Stacked embedded leadframe A method of forming a stackable embedded leadframe package includes coupling an electronic component having bond pads to a substrate; coupling on the substrate a leadframe having a plurality of leads, each lead having a lower mounting portion; encapsulating the elec... | 04/22/2008 |
| 7357994 | Thermal/environmental barrier coating system for silicon-containing materials A coating system for Si-containing materials, particularly those for articles exposed to high temperatures. The coating system exhibits improved resistance to corrosion from sea salt and CMAS as a result of using aluminate compounds to protect silicate-containing la... | 04/15/2008 |
| 7354649 | Semiconductor workpiece The present invention provides an apparatus and method for use in processing semiconductor workpieces. The new apparatus and method allows for the production of thinner workpieces that at the same time remain strong. Particularly, a chuck is provided that includes a... | 04/08/2008 |
| 7351660 | Process for producing high performance interconnects A method for fabricating high performance vertical and horizontal electrical connections in a three dimensional semiconductor structure. A dielectric film is imprinted with a stamp pattern at high vacuum and with precise temperature and stamping pressure control. Th... | 04/01/2008 |
| 7348650 | Element having microstructure and manufacturing method thereof A method of manufacturing an element having a microstructure of an excellent grating groove pattern or the like is obtained. This method of manufacturing an element having a microstructure comprises steps of forming a metal layer on a substrate, forming a dot column... | 03/25/2008 |
| 7332229 | Varnish, shaped item, electrical insulating film, laminate, flame retardant slurry and process for producing flame retardant particles and varnish The invention provides a varnish that contains an insulting resin, a curing agent, a flame retardant, and an organic solvent. The flame retardant comprises flame retardant particles surface treated with at least one surface treatment agent selected from the group co... | 02/19/2008 |
| 7329896 | Polymerizable charge transport compounds The invention relates to polymerizable charge transport compounds, their use as semiconductors or charge transport materials, in optical, electrooptical or electronic devices like for example organic field effect transistors (FET or OFET) for thin film transistor li... | 02/12/2008 |
| 7329433 | Shippable heat-treatable sputter coated article and method of making same The present invention provides a method of making a coated article, including the steps of: (A) providing a substrate; (B) depositing one or more dielectric layers over the substrate, the dielectric layers comprising: (i) a first dielectric film having at least one ... | 02/12/2008 |
| 7329617 | Coating for enhancing adhesion of molding compound to semiconductor devices A method is provided for enhancing adhesion between a molding compound and a semiconductor device comprising a semiconductor chip attached on a carrier, such as a lead frame, by coating the semiconductor device with a polymer primer prior to molding the semiconducto... | 02/12/2008 |
| 7329607 | Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby A conductive connection forming method includes forming a first layer comprising a first metal on a substrate and forming a second layer comprising a second metal different from the first metal on the first layer. At least a part of the first layer may be transforme... | 02/12/2008 |
| 7326859 | Printed circuit boards having pads for solder balls and methods for the implementation thereof A printed circuit board includes a group of pads suitable to be soldered to a respective group of solder-balls of a device. Each pad of the group has a crack initiation point on its perimeter at a location where cracks in a solder-ball are anticipated to start after... | 02/05/2008 |
| 7321005 | Encapsulant composition and electronic package utilizing same A method of making an encapsulant composition. The method includes: providing a first quantity of resin material of epoxy or cyanate ester resins; adding to the first quantity of resin material a second quantity of flexibilizing agent; adding to the first quantity o... | 01/22/2008 |
| 7319275 | Adhesion by plasma conditioning of semiconductor chip A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method c... | 01/15/2008 |
| 7319277 | Chip structure with redistribution traces A semiconductor chip or wafer comprises a passivation layer and a circuit line. The passivation layer comprises an inorganic layer. The circuit line is over and in touch with the inorganic layer of the passivation layer, wherein the circuit line comprises a first co... | 01/15/2008 |
| 7318948 | Light transmissive films A thin film of zinc oxide is deposited by sputter deposition in a partial pressure of oxygen on a suitable at a low temperature, such as less than 300 degrees Centigrade, to provide an amorphous film. This should take place in a sputtering environment which will pro... | 01/15/2008 |
| 7314766 | Semiconductor wafer treatment method, semiconductor wafer inspection method, semiconductor device development method and semiconductor wafer treatment apparatus A treatment method of a semiconductor wafer includes treating the semiconductor wafer in a first solution having at least one kind of an oxidative acid and an oxidizing agent and treating the semiconductor wafer in a second solution having at least one of HF and NH | 01/01/2008 |
| 7301190 | Structures and methods to enhance copper metallization Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a meta... | 11/27/2007 |
| 7291684 | Resin composition for encapsulating semiconductor chip and semiconductor device therewith An epoxy resin composition for encapsulating a semiconductor chip, which has good flowability without deterioration in curability. Specifically, a resin composition is disclosed for encapsulating a semiconductor chip containing a phenol aralkyl type epoxy resin cont... | 11/06/2007 |
| 7285613 | Free-radical curable polyesters and methods for use thereof The invention is based on the discovery that certain polyester compounds bearing free-radical curable moieties are useful as b-stageable adhesives for the microelectonic packaging industry. ... | 10/23/2007 |
| 7286764 | Reconfigurable modulator-based optical add-and-drop multiplexer An optical add and drop multiplexer system comprising a first module for providing a first signal; a second module for providing a second signal; and a modulator for receiving a channel of the first signal at a first location, the first location configured to actuat... | 10/23/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7279344 | Method of forming a nitride-based semiconductor A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the metho... | 10/09/2007 |
| 7276296 | Immersion plating and plated structures A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boilin... | 10/02/2007 |
| 7276292 | Insulating substrate boards for semiconductor and power modules An insulating substrate board for a semiconductor of the present invention comprises a ceramic substrate board (2) and a metal alloy layer (3) consisting of aluminum formed on one surface portion of the ceramic substrate board (2), wherein the V... | 10/02/2007 |
| 7276401 | Adhesion by plasma conditioning of semiconductor chip surfaces A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method c... | 10/02/2007 |
| 7270885 | Method for brazing ceramic-containing bodies, and articles made thereby Ceramic-containing bodies can be bonded to other ceramic-containing bodies, or to metals or metal-containing bodies, by way of an aluminum-silicon brazing alloy. Such alloys feature high thermal conductivity and a melting range intermediate to Cu—Sil and Au—Si. ... | 09/18/2007 |
| 7271494 | Adhesion by plasma conditioning of semiconductor chip surfaces A plasma conditioning method of improving the adhesion between an integrated circuit chip, having active and passive surfaces, the active surface polymer-coated and having a plurality of electrical coupling members, and an insulating underfill material. The method c... | 09/18/2007 |
| 7268472 | Piezoelectric device, liquid jetting head, ferroelectric device, electronic device and methods for manufacturing these devices An intermediate film (15, 12, 53) is formed on a substrate (11, 52), a bottom electrode (13, 542) is formed on top of this intermediate film, a ferroelectric film (24) or piezoelectric film (543) is formed on top of this bottom ele... | 09/11/2007 |
| 7268021 | Lead frame and method of manufacturing the same A lead frame having a structure that can discharge hydrogen adsorbed during deposition and can reduce a galvanic potential difference between plating layers and a method of manufacturing the same are provided. The method includes forming a Ni plating layer formed of... | 09/11/2007 |
| 7268064 | Method of forming polysilicon layer in semiconductor device Disclosed herein is a method of forming a polysilicon film of a semiconductor device. Upon deposition process of a polysilicon film, the inflow of a gas is reduced to 150 sccm to 250 sccm to control abnormal deposition depending upon excessive inflow of the gas. Acc... | 09/11/2007 |
| 7265167 | Epoxy resin composition for semiconductor encapsulation, and semiconductor device using the same An epoxy resin composition for semiconductor encapsulation capable of giving semiconductor devices of high reliability that do not cause short circuits even in pitch reduction in the interconnection electrode distance or the conductor wire distance therein as well a... | 09/04/2007 |
