U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Icon_funbox Bizarre Patents

Patent No. 5979328

Vehicular Impact Signaling Device

An apparatus for the deployment of a visible plume to alert other motorists that a proximate motor vehicle has been involved in a collision.

Newsletter  PatentStorm News

Make the Most of Our Site

See this month's Top Inventors and Most Cited Patents.

Stay on top of the latest innovations by subscribing to an RSS feed.

Registered users: Manage your profile.

 

Class 427/96.8 - Vapor or gas deposition


Subclass of Class 427 - Coating processes
Definition: Process in which coating material is a vapor or gas or
No. of patents: 365
Last issue date: 11/09/2010


1                    
NumberTitleIssue Date
7829135Method and apparatus for forming multi-layered circuit pattern
In the process of forming, on a substrate, a multi-layered circuit pattern with layers each having a portion made of the same material throughout the different layers in the direction in which the different layers are stacked, the position of nozzles with respect to...
11/09/2010
7785658Method for forming metal wiring structure
A method for forming a metal wiring structure includes: (i) providing a multi-layer structure including an exposed wiring layer and an exposed insulating layer in a reaction space; (ii) introducing an —NH2 or >NH terminal at least on an exposed surface of the insu...
08/31/2010
7763311Method for heating a substrate prior to a vapor deposition process
A method for depositing a thin film on a substrate in a vapor deposition system is described. Prior to the deposition process, the substrate is provided within the vapor deposition system and coupled to an upper surface of a substrate holder within the vapor deposit...
07/27/2010
7638161Method and apparatus for controlling dopant concentration during BPSG film deposition to reduce nitride consumption
A method and apparatus for controlling dopant concentration during borophosphosilicate glass film deposition on a semiconductor wafer to reduce consumption of nitride on the semiconductor wafer. In one embodiment of the invention, the method starts by placing a subs...
12/29/2009
7604834Formation of dielectric film by alternating between deposition and modification
The present invention discloses a method including: providing a substrate; and sequentially stacking layers of two or more diamond-like carbon (DLC) films over the substrate to form a composite dielectric film, the composite dielectric film having a k value of about...
10/20/2009
7410666Metal nitride carbide deposition by ALD
The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemi...
08/12/2008
7374941Active reactant vapor pulse monitoring in a chemical reactor
A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant sourc...
05/20/2008
7335591Method for forming three-dimensional structures on a substrate
A method of forming a resist layer on a non-planar surface of a substrate includes placing the non-planar surface into an electrophoretic resist. While the non-planar surface is in the electrophoretic resist, an electrical voltage is applied between the substrate an...
02/26/2008
7326444Methods for improving integration performance of low stress CDO films
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (
02/05/2008
7323411Method of selective tungsten deposition on a silicon surface
In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on a silicon surface. The silane pre-flow helps minimize silicon consump...
01/29/2008
7311947Laser assisted material deposition
A method of forming a film on a substrate includes activating a gas precursor to form a material on the substrate by irradiating the gas precursor with electromagnetic energy at a frequency tuned to an absorption frequency of the gas precursor. ...
12/25/2007
7297361In-line deposition processes for circuit fabrication
A method for circuit fabrication includes positioning first and second webs of film in proximity to each other, wherein the second web of film defines a deposition mask, and deposition material on the first web of film through the deposition mask pattern defined by ...
11/20/2007
7273811Method for chemical vapor deposition in high aspect ratio spaces
A method of depositing conformal film into high aspect ratio spaces includes the step of forming a gradient of precursor gas inside the space(s) prior to deposition. The gradient may be formed, for example, by reducing the pressure within the deposition chamber or b...
09/25/2007
7270848Method for increasing deposition rates of metal layers from metal-carbonyl precursors
A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas contai...
09/18/2007
7268365Volatile copper (II) complexes and reducing agents for deposition of copper films by Atomic Layer Deposition
The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. ...
09/11/2007
7261916Method of manufacturing thin-film antenna
A method of manufacturing a thin-film antenna is disclosed. A substrate is provided and coated with an organic material layer. After both of the substrate and organic material layer have been dried, a conductive layer is formed on both the substrate and the organic ...
08/28/2007
7246570Indication film for temperature and temperature distribution measurement and related method
A method of determining temperature and temperature distribution over the surface of an object includes (a) applying a temperature sensitive film composed of material displaying change in color as a function of temperature on a surface of an object; and (b) comparin...
07/24/2007
7238616Photo-assisted method for semiconductor fabrication
The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of phot...
07/03/2007
7229502Method of forming a silicon nitride layer
A method of forming a silicon nitride layer is provided. A deposition furnace having an outer tube, a wafer boat, a gas injector and a uniform gas injection apparatus is provided. The wafer boat is positioned within the outer tube for carrying a plurality of wafers....
06/12/2007
7201943Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the material
A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a secon...
04/10/2007
7199255Imino-amide catalysts for olefin polymerization
The present invention provides a catalyst precursor, a catalyst system comprising the precursor, and a polymerization method using the catalyst system, an embodiment of the precursor is selected from the following structures:
04/03/2007
7195801Manufacturing process for storing and transferring evaporation material
A manufacturing system capable of enhancing reliability and luminance of a light emitting element is provided which uses an EL material of very high purity in evaporation. The system is also capable of using an EL material efficiently. Instead of a glass jar, a cont...
03/27/2007
7179335In situ adaptive masks
A variable adaptive mask is provided that can be dynamically modified in situ in a physical vapor deposition process. The mask comprises a fixed mask portion, a plurality of channels extending through the fixed mask portion, a control mechanism for controlling throu...
02/20/2007
7172818Copper foil for chip-on-film use, plasma display panel, or high-frequency printed circuit board
A copper foil for chip-on-film use, a plasma display panel, or a high-frequency printed circuit board obtained by rolling copper foil to smooth the surface to give a surface area of not more than 1.30 times an ideal smooth surface, the smoothed copper foil having de...
02/06/2007
7087774Volatile copper(II) complexes and reducing agents for deposition of copper films by atomic layer deposition
The present invention relates to novel 1,3-diimine copper complexes and the use of 1,3-diimine copper complexes for the deposition of copper on substrates or in or on porous solids in an Atomic Layer Deposition process. ...
08/08/2006
7088004Flip-chip device having conductive connectors
Semiconductor devices having a passivation layer formed over their major electrodes and individual electrical connectors connected to the electrodes by conductive attach material through openings in the passivation layer are described. ...
08/08/2006
7081421Lanthanide oxide dielectric layer
A ruthenium gate for a lanthanide oxide dielectric layer and a method of fabricating such a combination gate and dielectric layer produce a reliable structure for use in a variety of electronic devices. The lanthanide oxide dielectric layer is formed by depositing l...
07/25/2006
7063981Active pulse monitoring in a chemical reactor
A method and apparatus for determining changes in a supply system, designed to supply repeated pulses of a vapor phase reactant to a reaction chamber is disclosed. One embodiment involves providing the reactant source, and a gas conduit to connect the reactant sourc...
06/20/2006
7033641Gas separating unit and method for manufacturing the same
A method for manufacturing a gas separating unit which comprises laminating a metal plate on a material capable of separating a hydrogen gas (palladium alloy foil) by cladding, etching selectively a central portion of a cut clad plate (K) using an etching solution, ...
04/25/2006
6955726Mask and mask frame assembly for evaporation
A mask frame assembly includes a frame having an opening and a mask having at least two unit mask elements. Both ends of each unit mask element are fixed to the frame in a state of tension. The unit mask elements include a unit masking pattern, and overlap each othe...
10/18/2005
6943066Active matrix backplane for controlling controlled elements and method of manufacture thereof
An electronic device is formed from electronic elements deposited on a substrate. The electronic elements are deposited on the substrate by advancing the substrate through a plurality of deposition vacuum vessels, with each deposition vacuum vessel having at least o...
09/13/2005
6616966Method of making lithographic contact springs
A method of forming an interconnection, including a spring contact element, by lithographic techniques. In one embodiment, the method includes applying a masking material over a first portion of a substrate, the masking material having an opening which wi...
09/09/2003
6245380Method of forming bonding pad
A method of forming bonding pad commences by forming a conformal barrier layer on a provided inter-metal dielectric layer. A first metal layer is formed on the barrier layer to partially fill the trench. A thin glue layer is formed on the first metal laye...
06/12/2001
6239018Method for forming dielectric layers
A method for forming dielectric layers is described. Wiring lines are formed on a provided semiconductor substrate. Spacers are formed on the sidewalls of the wiring lines. A liner layer is formed on the wiring lines and on the spacers by a first HDPCVD s...
05/29/2001
6143377Process of forming a refractory metal thin film
A process for forming a refractory metal thin film on a substrate by subjecting a gaseous mixture containing a halide of a refractory metal and the hydrogen gas to a plasma chemical vapor deposition, comprising the step of adjusting a mixing ratio of the ...
11/07/2000
6143362Chemical vapor deposition of titanium
A titanium layer is formed on a substrate with chemical vapor deposition (CVD). First, a seed layer is formed on the substrate by combining a first precursor with a reducing agent by CVD. Then, the titanium layer is formed on the substrate by combining a ...
11/07/2000
6140215Method and apparatus for low temperature deposition of CVD and PECVD films
Method and apparatus are disclosed for low temperature deposition of CVD and PECVD films utilizing a gas-dispersing showerhead position within one inch of a rotating substrate. The showerhead is positioned a suitable distance below a gas-dispensing appara...
10/31/2000
6136693Method for planarized interconnect vias using electroless plating and CMP
An improved and new method for fabricating conducting vias between successive layers of conductive interconnection patterns in a semiconductor integrated circuit has been developed. The method utilizes a first CMP step to form a barrier lined contact hole...
10/24/2000
6133147Process for selective metal deposition in holes of semiconductor device
A process for preparing a metallic interconnecting plug in a semiconductor device which comprises the steps of: i) forming an insulating layer on the surface of a semiconductor substrate or a metal underlayer of the semiconductor device, ii) forming a hol...
10/17/2000
6124186Deposition of device quality, low hydrogen content, hydrogenated amorphous silicon at high deposition rates with increased stability using the hot wire filament technique
A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure...
09/26/2000
1                    
 
Sign InRegister
Username  
Password   
forgot password?