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...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 7238389 | Vaporizing fluidized organic materials A method for vaporizing organic materials onto a surface, to form a film includes providing a quantity of organic material in a fluidized powdered form; metering the powdered organic material and directing a stream of such fluidized powder onto a first member; heati... | 07/03/2007 |
| 7048968 | Methods of depositing materials over substrates, and methods of forming layers over substrates The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercrit... | 05/23/2006 |
| 7029724 | Composition and method for forming doped A-site deficient thin-film manganate layers on a substrate A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposi... | 04/18/2006 |
| 6730354 | Forming ferroelectric Pb(Zr,Ti)O3 films Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer unifo... | 05/04/2004 |
| 6660331 | MOCVD of SBT using toluene-based solvent system for precursor delivery A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent comp... | 12/09/2003 |
| 6602549 | Indium source reagent composition, and use thereof for deposition of indium-containing films on subtrates and ion implantation of indium-doped shallow junction microelectronic structures An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated ... | 08/05/2003 |
| 6576345 | Dielectric films with low dielectric constants Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric cons... | 06/10/2003 |
| 6541067 | Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor formulations. The ruthenium precursor formulations of the prese... | 04/01/2003 |
| 6383555 | Misted precursor deposition apparatus and method with improved mist and mist flow A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filte... | 05/07/2002 |
| 6355311 | Method for making an optical recording medium and an optical recording medium obtained by the method A method for making an otical recording medium comprises providing a substrate which is encoded with information in the form of pits and/or a continuous groove beforehand at least on one side thereof, spraying a solution or dispersion of a film-forming ma... | 03/12/2002 |
| 6187379 | Fluidized bed coating process with liquid reagent A preferred embodiment of a method for coating a substrate with a chemical compound uses a precursor liquid. This precursor liquid preferably serves as a reagent in the coating process and is housed in a reactor. Once the precursor liquid is placed in the... | 02/13/2001 |
| 6169031 | Chemical vapor deposition for titanium metal thin film In-situ prepared TiCl2 and TiCl3 precursors to form titanium metal thin film by chemical vapor deposition at 350~800° C. Due to the low decomposition temperature of TiCl2 and TiCl3, titanium metal thin films we... | 01/02/2001 |
| 6126994 | Liquid material supply apparatus and method An apparatus for supplying a low vapor pressure liquid material for deposition to a deposition chamber in which the low vapor pressure liquid material is pushed out of a pressurization passage by a pressure gas to a pressure liquid supply passage; a flow ... | 10/03/2000 |
| 5989635 | High dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin film There is provided a (Ba, Sr) TiO3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in ... | 11/23/1999 |
| 5681614 | Hydrophobic treatment method involving delivery of a liquid process agent to a process space An apparatus for hydrophobic treatment of a semiconductor wafer comprises a tank in which HMDS liquid is stored, a process chamber in which the wafer is treated, and a unit for supplying HMDS liquid from the tank into the process chamber in an amount need... | 10/28/1997 |
| 5456945 | Method and apparatus for material deposition A method and apparatus are disclosed for forming thin films of chemical compounds utilized in integrated circuits. The method includes steps of forming a precursor liquid comprising a chemical compound in a solvent, providing a substrate within a vacuum d... | 10/10/1995 |
| 5393564 | High efficiency method for performing a chemical vapor deposition utilizing a nonvolatile precursor The invention is a method directed to the use of a nonvolatile precursor, either a solid precursor or a liquid precursor, suitable for chemical vapor deposition (CVD), including liquid source CVD (LSCVD), of a semiconductor film. Using the method of the i... | 02/28/1995 |
| 5278138 | Aerosol chemical vapor deposition of metal oxide films A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperatu... | 01/11/1994 |
| 4994301 | ACVD (chemical vapor deposition) method for selectively depositing metal on a substrate A wafer, in which at least one via hole is made in an insulating film formed on the substrate, and a first metallic film is formed in the via hole is prepared. The wafer is held in a wafer holder in a reaction chamber under reduced pressure. WF6 | 02/19/1991 |
