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Actor Marlon Brando has four patents, all named "Drumhead tensioning device and method."
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| Number | Title | Issue Date |
| 7378074 | Method of forming a uniform carbon nanotube electron-emission layer in a field emission display A carbon nanotube suspension uses water as the basic solvent added with dispersant, stabilizer, coalescing aid, adhesion promoter, and a carbon nanotube. The basic solvent and the above solutes form a low viscosity solvent with carbon nanotube suspending therein. Th... | 05/27/2008 |
| 7343216 | Applying foliage and terrain features to architectural scaled physical models The method for assembling an architectural site model facilitates repeated placement and removal of foliage to the model. The site model is constructed as an upper shell portion and a lower base portion. Model foliage is attached to the shell portion. The upper shel... | 03/11/2008 |
| 7291185 | Method of manufacturing both-side metallized film with reduced blocking of metallized film and metallized film capacitor using the same A method of manufacturing a both-side metallized insulation film comprises steps of: depositing zinc or a blend of zinc and aluminum onto both sides of an insulation film; and winding this metallized film into a product roll. The method is characterized in spraying ... | 11/06/2007 |
| 7208787 | Semiconductor device and a process for manufacturing a complex oxide film A semiconductor device is prepared using an insulating film consisting of a tantalum-tungsten oxide crystal film, a tantalum-molybdenum oxide crystal film, or a laminated film where a silicon oxide, silicon oxynitride or silicon nitride film is laminated on the crys... | 04/24/2007 |
| 7205599 | Devices having improved capacitance A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ... | 04/17/2007 |
| 7199415 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 04/03/2007 |
| 7175876 | Patterned coating method employing polymeric coatings Patterned articles can be prepared by applying a release polymer to a substrate in a desired pattern, applying a substrate-adherent polymer over the pattern and substrate, and mechanically removing the substrate-adherent polymer from the pattern without requiring so... | 02/13/2007 |
| 7135417 | Method of forming a semiconductor device In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional interposed cleanings, as well as an optional conditioning step after oxida... | 11/14/2006 |
| 7126205 | Devices having improved capacitance and methods of their fabrication A capacitor formed by a process using only two deposition steps and a dielectric formed by oxidizing a metal layer in an electrolytic solution. The capacitor has first and second conductive plates and a dielectric is formed from the first conductive plate. ... | 10/24/2006 |
| 7115461 | High permittivity silicate gate dielectric A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A m... | 10/03/2006 |
| 7113131 | Metalized dielectric substrates for EAS tags A metallized substrate, such as used to make a resonant circuit tag with inductive and capacitive elements in series, has a thin inorganic or polymeric dielectric layer formed on a metal layer. The inorganic layer may be formed by anodizing a surface of the metal la... | 09/26/2006 |
| 7105405 | Rugged metal electrodes for metal-insulator-metal capacitors Thin film metal-insulator-metal capacitors having enhanced surface area are formed by a substituting metal for silicon in a preformed electrode geometry. The resulting metal structures are advantageous for high-density DRAM applications since they have good conducti... | 09/12/2006 |
| 7101756 | Methods for enhancing capacitors having roughened features to increase charge-storage capacity Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase th... | 09/05/2006 |
| 7098503 | Circuitry and capacitors comprising roughened platinum layers In one aspect, the invention includes a method of forming a roughened layer of platinum, comprising: a) providing a substrate within a reaction chamber; b) flowing an oxidizing gas into the reaction chamber; c) flowing a platinum precursor into the reaction chamber ... | 08/29/2006 |
| 7074719 | ALD deposition of ruthenium A method to deposit nucleation problem free ruthenium by ALD. The nucleation problem free, relatively smooth ruthenium ALD film is deposited by the use of plasma-enhanced ALD of ruthenium underlay for consequent thermal ruthenium ALD layer. In addition, oxygen or ni... | 07/11/2006 |
| 7067173 | Method for manufacturing laminated electronic component Provided is a Ag-based conductive paste for a terminal electrode which suppresses oxidation of the Ni surface of an internal conductor and therefore brings about excellent joining with Ni even when baking is performed in the atmosphere in the case where Ni is used a... | 06/27/2006 |
| 7052584 | Method of forming a capacitor A method of forming a capacitor having a capacitor dielectric layer comprising ABO3, where “A” is selected from the group consisting of Sn and Group IIA metal elements and mixtures thereof, where “B” is selected from the group consisting of Group ... | 05/30/2006 |
| 7046501 | Capacitor-embedded substrate A capacitor-embedded substrate for reliably compensating for fluctuation of a power source voltage is provided. A decoupling capacitor is formed between an input side electrode layer and an output side electrode layer via interlayer insulating layers, the decoupling... | 05/16/2006 |
| 7034353 | Methods for enhancing capacitors having roughened features to increase charge-storage capacity Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase th... | 04/25/2006 |
| 7026169 | Method of forming PZT ferroelectric film A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of ... | 04/11/2006 |
| 7015529 | Localized masking for semiconductor structure development Container structures for use in integrated circuits and methods of their manufacture without the use of mechanical planarization such as chemical-mechanical planarization (CMP), thus eliminating CMP-induced defects and variations. The methods utilize localized maski... | 03/21/2006 |
| 7005695 | Integrated circuitry including a capacitor with an amorphous and a crystalline high K capacitor dielectric region The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second capacitor electrode and a high K capacitor dielectric region received the... | 02/28/2006 |
| 6995419 | Semiconductor constructions having crystalline dielectric layers The invention includes semiconductor constructions. In one implementation, semiconductor construction includes a first conductive material. A first layer of a dielectric material is over the first conductive material. A second layer of the dielectric material is on ... | 02/07/2006 |
| 6975453 | Multilayer electrically conductive anti-reflective coating The present invention comprises a multilayer inorganic anti-reflective coating with predetermined optical properties, for application on a flexible substrate. The coating comprises a stack consisting of five material layers, whereby the third layer is a dummy layer ... | 12/13/2005 |
| 6953721 | Methods of forming a capacitor with an amorphous and a crystalline high K capacitor dielectric region The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second capacitor electrode and a high K capacitor dielectric region received the... | 10/11/2005 |
| 6946357 | Conductive container structures having a dielectric cap Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti... | 09/20/2005 |
| 6943392 | Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric r... | 09/13/2005 |
| 6939723 | Method of forming haze-free BST films Described herein is a method for producing a haze-free (Ba, Sr)TiO3 (BST) film, and devices incorporating the same. In one embodiment, the BST film is made haze-free by depositing the film with a substantially uniform desired crystal orientation, for exam... | 09/06/2005 |
| 6936301 | Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen p... | 08/30/2005 |
| 6921710 | Technique for high efficiency metalorganic chemical vapor deposition A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced int... | 07/26/2005 |
| 6908562 | Method of forming electrode for saw device A method of forming an electrode for a surface acoustic wave (SAW) device comprises the steps of forming an alloy film (32) made of aluminum (Al) and magnesium (Mg) on a substrate (31) and selectively etching the alloy film (32) by using a gaseo... | 06/21/2005 |
| 6902984 | Methods of forming void regions, dielectric regions and capacitor constructions In one aspect, the invention includes a method of forming a void region associated with a substrate, comprising: a) providing a substrate; b) forming a sacrificial mass over the substrate; c) subjecting the mass to hydrogen to convert a component of the mass to a vo... | 06/07/2005 |
| 6849292 | Manufacture of solid state capacitors The present invention concerns the field of solid state capacitors and relates particularly to massed production methods for manufacturing solid state capacitors. According to one aspect of the invention there is provided a method of manufacturing multiple solid sta... | 02/01/2005 |
| 6787186 | Method of controlled chemical vapor deposition of a metal oxide ceramic layer A method of forming a metal oxide ceramic layer is provided, in which a gaseous flow of a vaporized solution of a precursor organo metal compound in a volatile organic solvent, e.g., plus an oxidizing gas, in the presence of a protonating additive substance and/or a... | 09/07/2004 |
| 6764712 | Method for producing high surface area foil electrodes A method for increasing the surface area of foil electrodes of electrolytic capacitors. A valve metal is deposited by evaporation on a valve metal foil in a low pressure inert atmosphere including oxygen at a pressure one to two orders of magnitude lower than the pr... | 07/20/2004 |
| 6740351 | Method for production of a regular multi-layer construction, in particular for electrical double layer capacitors and the corresponding device For manufacturing a multi-layer structure with repeating layer sequences, a band-shaped carrier material is first partially separated into individual sections of a same size with connections capable of bearing remaining between the individual sections. After continu... | 05/25/2004 |
| 6696138 | Solid electrolytic capacitor and method for producing the same A solid electrolytic capacitor comprises a porous valve acting metal having formed thereon a dielectric film and a solid electrolyte formed on the dielectric film. The solid electrolyte occupies from 10 to 95% of the space within a pore of the porous meta... | 02/24/2004 |
| 6516504 | Method of making capacitor with extremely wide band low impedance A capacitor having a floating plate-shaped electrode, at least two patterned plate electrodes overlying the floating plate-shaped electrode, and a dielectric layer therebetween. The resulting structure exhibits high two-port insertion loss even at frequen... | 02/11/2003 |
| 6495021 | Method for forming capacitor anodes A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a... | 12/17/2002 |
| 6410083 | Method for doping sintered tantalum and niobium pellets with nitrogen A method of doping tantalum and niobium pellets with nitrogen is described wherein the resulting pellets are substantially free of nitride precipitate on their outer surfaces. The method includes the step of heating the pellets to a temperature of from ab... | 06/25/2002 |
