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| Number | Title | Issue Date |
| 7588804 | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces Reactors having isolated gas connectors, systems that include such reactors, and methods for depositing materials onto micro-devices workpieces are disclosed herein. In one embodiment, a reactor for depositing material onto a micro-device workpiece includes a reacti... | 09/15/2009 |
| 7439208 | Growth of in-situ thin films by reactive evaporation A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the ... | 10/21/2008 |
| 7390381 | Information recording medium and method of manufacturing the same An information recording medium that is excellent in repeated-rewriting performance and is deteriorated less in crystallization sensitivity with time is provided, with respect to which high density recording can be carried out. A method of manufacturing the same als... | 06/24/2008 |
| 7378134 | Method of forming high temperature corrosion resistant film Disclosed is a method of forming a high-temperature corrosion-resistant film, which comprises placing a container containing a film-forming fine powder and a target member capable of being heated by an electric current heating process, in an atmosphere-controllable ... | 05/27/2008 |
| 7378126 | Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed below the ET layer in the active matrix light-emitting device. However, since the TFT... | 05/27/2008 |
| 7358465 | Method for restoring ceramic heater A ceramic heater for heating a semiconductor wafer under processing and has a layered structure wherein on one surface of a supporting substrate made of carbon or a carbon-based composite material, successively formed layers including an insulating layer, and electr... | 04/15/2008 |
| 7323229 | Method and device for coating a substrate The invention relates to a method for coating a substrate with a layer of a material, such as a metal, in which a quantity of electrically conductive material is vaporized in a space with a low background pressure and energy is supplied to the material which is to b... | 01/29/2008 |
| 7288286 | Delivering organic powder to a vaporization zone A method for vaporizing organic material and condensing it onto a surface to form a layer, comprising: providing a quantity of first organic material in a powdered form in a first container and a quantity of second organic material in a second container spaced from ... | 10/30/2007 |
| 7238389 | Vaporizing fluidized organic materials A method for vaporizing organic materials onto a surface, to form a film includes providing a quantity of organic material in a fluidized powdered form; metering the powdered organic material and directing a stream of such fluidized powder onto a first member; heati... | 07/03/2007 |
| 7213347 | Metering material to promote rapid vaporization Apparatus for vaporization of powdered or granular material, includes a container for holding powdered or granular material having at least one component; a vaporization structure; and a positive displacement mechanism spaced from the vaporization structure defining... | 05/08/2007 |
| 7208744 | Radiation image storage panel A radiation image storage panel composed at least of a phosphor layer containing energy-storable phosphor particles and a light-reflecting layer provided on one side of the phosphor layer, in which the energy-storable phosphor particles are composed of at least two ... | 04/24/2007 |
| 7179508 | Conducting polymer films and method of manufacturing the same by surface polymerization using ion-assisted deposition Conducting polymers having improved optical properties, and a method of manufacturing the conducting polymers, are disclosed. The conducting polymers are prepared by a process wherein organic ions and neutral oligomers are deposited simultaneously on a substrate sur... | 02/20/2007 |
| 7166732 | Copper (I) compounds useful as deposition precursors of copper thin films Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. ... | 01/23/2007 |
| 7156960 | Method and device for continuous cold plasma deposition of metal coatings A method for the deposition of a metal layer on a substrate (1) uses a cold plasma inside an enclosure (7) heated to avoid the formation of a metal deposit at its surface. The enclosure has an inlet (21) and an outlet (22) for the substra... | 01/02/2007 |
| 7122736 | Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a t... | 10/17/2006 |
| 7112690 | Volatile noble metal organometallic complexes A series of noble metal organometallic complexes of the general formula (I): MLaXb(FBC)c, wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic l... | 09/26/2006 |
| 7064224 | Organometallic complexes and their use as precursors to deposit metal films This invention is related to organometallic precursors and deposition processes for fabricating conformal metal containing films on substrates such as silicon, metal nitrides and other metal layers. The organometallic precursors are N,N′-alkyl-1,1-alkylsily... | 06/20/2006 |
| 7056479 | Process for preparing carbon nanotubes Carbon nanotubes are formed on carbon paper by first depositing a metal catalyst on the carbon paper, and passing a feedstock gas containing a source of carbon over the substrate while applying an electrical current thereto to heat the substrate sufficiently to gene... | 06/06/2006 |
| 7033640 | Method of coloring cut gemstones A method of coloring cut gemstones introduces metals or metal oxides into a surface layer by means of heat treatment. During the heat treatment the gemstones are laid on a solid plate and the metals or metal oxides form a substantial constituent of the plate. The su... | 04/25/2006 |
| 6992202 | Single-source precursors for ternary chalcopyrite materials, and methods of making and using the same A single source precursor for depositing ternary I-III-VI2 chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI2 stoichiometry “built into” a single precursor molecular structure which degrades on he... | 01/31/2006 |
| 6992305 | Radiation image converting panel and production method of the same A radiation image converging panel comprising a support having thereon a stimulable phosphor layer produced by a vapor phase method so as to have a thickness of 50 μm to 10 mm, wherein the stimulable phosphor layer comprises:(i) a stimulable phosphor; and (ii) an a... | 01/31/2006 |
| 6982341 | Volatile copper aminoalkoxide complex and deposition of copper thin film using same A volatile copper aminoalkoxide complex of formula (I) can form a copper thin film having an improved quality by metal organic chemical vapor deposition (MOCVD): wherein, R1, R2, R3 and ... | 01/03/2006 |
| 6956127 | Alkyl group VA metal compounds Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n, where ... | 10/18/2005 |
| 6929820 | Method of forming a superconductor film A method includes forming an as-grown film of a superconductor composed of a MgB2 compound which is made by simultaneous evaporation of magnesium and boron. The as-grown film is superconductive without an annealing process to make the film superconductive... | 08/16/2005 |
| 6921552 | Fabrication of Zinc Oxide films on non-planar substrates and the use thereof A method of manufacture of a substantially continuous circumferential coating on a non-planar substrate, is disclosed the method comprising the steps of: utilising a substantially non directional deposition technique and a substantially static substrate deposition g... | 07/26/2005 |
| 6919468 | Asymmetric group 8 (VIII) metallocene compounds Asymmetric, disubstituted metallocene compounds have the general formula CpMCp′ where M is a metal selected from the group consisting of Ru, Os and Fe; Cp is a first substituted cyclopentadienyl or indenyl moiety that includes at least one substituent group D... | 07/19/2005 |
| 6899966 | Composite surface on a stainless steel matrix A composite surface having a thickness from 10 to 5,000 microns comprising a spinel of the formula MnxCr3−xO4 wherein x is from 0.5 to 2 and oxides of Mn, Si selected from the group consisting of MnO, MnSiO3, Mn2 | 05/31/2005 |
| 6884901 | Methods for making metallocene compounds A method for producing Group 8 (VIII) metallocene or metallocene-like compounds employs a compound that includes a Cp′ anion, such as found, together with a counterion, in a cyclopentadienide or cyclopentadienide-like salt. In one embodiment, the method includes r... | 04/26/2005 |
| 6861103 | Synthesis of functional polymers and block copolymers on silicon oxide surfaces by nitroxide-mediated living free radical polymerization in vapor phase Nitroxide mediated free radical polymerization of vaporized vinyl monomers, including acrylic acid (AAc), styrene (St), N-2-(hydroxypropyl)methacrylamide (HPMA) and N-isopropyl acrylamide (NIPAAm), on silicon wafers is demonstrated. FTIR, ellipsometry and contact an... | 03/01/2005 |
| 6831188 | Dihydrocarbylamino metal compounds This invention provides a process of preparing dihydrocarbylamido metal compounds. This process comprises bringing together, in a liquid reaction medium, at least one metal halide, MX4, where M is titanium, zirconium, or hafnium, and X is a halogen atom, ... | 12/14/2004 |
| 6824824 | Method for recycling organometallic compound for MOCVD The present invention is a method for recycling an organometallic compound for MOCVD comprising extracting an unreacted organometallic compound from a used raw material which has undergone a thin film production process, wherein the unreacted organometallic compound... | 11/30/2004 |
| 6822107 | Chemical vapor deposition precursors for deposition of copper Copper precursors of the formula (I): wherein: Cu is Cu(I) or Cu(II); x is an integer having a value of from 0 to 4; each of R, R′ and R″ ... | 11/23/2004 |
| 6818783 | Volatile precursors for deposition of metals and metal-containing films This invention is directed to a group of novel homologous eight membered ring compounds having a metal, such as copper, reversibly bound in the ring and containing carbon, nitrogen, silicon and/or other metals. A structural representation of the compounds of this in... | 11/16/2004 |
| 6808758 | Pulse precursor deposition process for forming layers in semiconductor devices A process for producing thin layers in electronic devices such as integrated circuit chips, is provided. The process includes the steps of injecting a precursor fluid into a thermal processing chamber containing a substrate, such as a semiconductor wafer. The precur... | 10/26/2004 |
| 6797341 | Method for producing boride thin films Thin films of conducting and superconducting materials are formed by a process which combines physical vapor deposition with chemical vapor deposition. Embodiments include forming boride films, such as magnesium diboride, in high purity with superconducting properti... | 09/28/2004 |
| 6777565 | Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of ... | 08/17/2004 |
| 6767830 | Br2SbCH3 a solid source ion implant and CVD precursor A volatile solid-source novel antimony precursor, Br2SbCH3, that may be utilized in semiconductor processing chambers for depositing antimony on a substrate by deposition methods, e.g., chemical vapor deposition, ion implantation, molecular bea... | 07/27/2004 |
| 6753437 | CVD material compound and method for manufacturing the same, and CVD method of iridium or iridium compound thin film The present invention relates to a raw material for CVD comprising an organic iridium compound as a main component, said organic iridium compound being tris(2,4-octanedionato)iridium represented by Formula 1. Particularly preferably, the raw material for CVD consist... | 06/22/2004 |
| 6743934 | Raw material compounds for use in CVD, and chemical vapor deposition of ruthenium compound thin films This invention provides raw material compounds for use in CVD which contain organic ruthenium compounds as a main ingredient, the organic ruthenium compounds having two β-diketones plus one diene, one diamine or two organic ligands which are coordinated with ruthen... | 06/01/2004 |
| 6743933 | Process of forming thin film and precursor for chemical vapor deposition A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): wherein R1 | 06/01/2004 |
