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| Number | Title | Issue Date |
| 8137764 | Mechanical enhancer additives for low dielectric films A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the ... | 03/20/2012 |
| 7332445 | Porous low dielectric constant compositions and methods for making and using same A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicat... | 02/19/2008 |
| 7285758 | Rapid thermal processing lamp and method for manufacturing the same A method and system for inductively coupling energy to a heating filament (7A′, 7B′, 7C′, 7A, 7B, 7C) in a thermal processing environment. By applying AC power to a coil antenna (11) and inductive coupling to a ... | 10/23/2007 |
| 7282132 | Zinc oxide film treatment method and method of manufacturing photovoltaic device utilizing the same A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaini... | 10/16/2007 |
| 7229935 | Method of forming a thin film by plasma CVD of a silicon-containing source gas A method for forming a thin film includes: supplying an additive gas, a dilution gas, and a silicon-containing source gas into a reaction chamber wherein a substrate is placed; forming a thin film on the substrate by plasma CVD under a given pressure with a given in... | 06/12/2007 |
| 7125525 | Device and method for production of carbon nanotubes, fullerene and their derivatives An apparatus and method for the production of nanotubes, fullerene and their derivatives where, in an environment where an inert gas flows at or below atmospheric pressure, a high frequency electromagnetic field is generated and a pure or doped graphite element is s... | 10/24/2006 |
| 7122736 | Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) Å/second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a t... | 10/17/2006 |
| 7071081 | Method of forming semiconductor device The present invention provides a method of forming a semiconductor device that has a plurality of pin junctions comprising silicon films formed on a substrate by using a radio-frequency plasma CVD method, including: forming a first semiconductor layer; covering a su... | 07/04/2006 |
| 7070833 | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments A method of passivating the surface of a substrate to protect the surface against corrosion, the surface effects on a vacuum environment, or both. The substrate surface is placed in a treatment environment and is first dehydrated and then the environment is evacuate... | 07/04/2006 |
| 7052552 | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap ... | 05/30/2006 |
| 7041342 | Thin-film solar cells and method of making There are now provided thin-film solar cells and method of making. The devices comprise a low-cost, low thermal stability substrate with a semiconductor body deposited thereon by a deposition gas. The deposited body is treated with a conversion gas to provide a micr... | 05/09/2006 |
| 7030313 | Thin film solar cell and method of manufacturing the same A thin film solar cell comprises a p-layer, an i-layer and an n-layer formed in this order as a pin junction on a substrate in which the p-layer and the i-layer are thin silicon films each containing a crystalline component, and the p-layer contains p-type impuritie... | 04/18/2006 |
| 7003215 | Vapor flow controller A vapor flow controller apparatus for delivery of chemical reagent vapors from a liquid phase source material is provided which includes a source container containing the liquid phase source material, a pump to transport the liquid phase source material to a vaporiz... | 02/21/2006 |
| 6979368 | Apparatus and method for producing a semiconductor device including a byproduct control system An apparatus includes a reaction chamber installed in a reaction furnace; a discharge port for removing from the reaction chamber reaction byproducts formed during producing of the semiconductor device; a heater for generating heat to the reaction chamber; and a hot... | 12/27/2005 |
| 6962732 | Process for controlling thin film uniformity and products produced thereby Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate ... | 11/08/2005 |
| 6887578 | Fluorocarbon-organosilicon copolymers and coatings prepared by hot-filament chemical vapor deposition Hot-filament chemical vapor deposition has been used to deposit copolymer thin films consisting of fluorocarbon and siloxane groups. The presence of covalent bonds between the fluorocarbon and organosilicon moieties in the thin film has been confirmed by Infrared, X... | 05/03/2005 |
| 6858270 | Liquid crystal imprinting Oriented materials and methods for their formation are disclosed. The oriented material is formed by depositing an oriented component from an oriented liquid crystal medium. Oriented materials having multiple layers and methods for their formation are also disclosed... | 02/22/2005 |
| 6846742 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processi... | 01/25/2005 |
| 6737123 | Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2 | 05/18/2004 |
| 6706336 | Silicon-based film, formation method therefor and photovoltaic element A silicon-based film of excellent photoelectric characteristics can be obtained by introducing a source gas containing silicon halide and hydrogen into the interior of a vacuum vessel, at least a part of the interior being covered with a silicon-containing solid, ge... | 03/16/2004 |
| 6660874 | Trialkyl Group VA metal compounds Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.... | 12/09/2003 |
| 6638839 | Hot-filament chemical vapor deposition chamber and process with multiple gas inlets A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode insid... | 10/28/2003 |
| 6596343 | Method and apparatus for processing semiconductor substrates with hydroxyl radicals A method for processing semiconductor substrates by reacting hydroxyl radicals with a precursor to cause the precursor to decompose and form a film which deposits on a substrate. Hydroxyl radicals, which are produced in a hydroxyl-ion producing apparatus ... | 07/22/2003 |
| 6589868 | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substra... | 07/08/2003 |
| 6558741 | Aluminum reflecting mirror and method of making the same Within a chamber in a vacuum atmosphere, SiO is deposited on a glass substrate so as to form a first layer as a protective film, Al is deposited on the first layer so as to form a second layer as an aluminum reflective film, MgF2 is deposited o... | 05/06/2003 |
| 6531654 | Semiconductor thin-film formation process, and amorphous silicon solar-cell device In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take place and decompose the material gas to form an amorphous ... | 03/11/2003 |
| 6521826 | Thin film solar cell and fabrication method therefor An n-type polysilicon thin film, an intrinsic polysilicon thin film and a p-type polysilicon thin film are formed on a transparent conductive film of a glass substrate by the plasma enhanced CVD method at a plasma excitation frequency of 81.36 MHz so as t... | 02/18/2003 |
| 6517913 | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma f... | 02/11/2003 |
| 6488995 | Method of forming microcrystalline silicon film, method of fabricating photovoltaic cell using said method, and photovoltaic device fabricated thereby Disclosed herein is a method of forming a microcrystalline silicon film by using a raw gas containing at least a silicon compound by a high-frequency plasma CVD method, wherein the formation of the film is conducted in such a manner that the residence tim... | 12/03/2002 |
| 6485618 | Integrated copper fill process A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volu... | 11/26/2002 |
| 6465044 | Chemical vapor deposition of silicon oxide films using alkylsiloxane oligomers with ozone This invention relates to a method of depositing silicon oxide films on the surface of semiconductor substrates, and more particularly to depositing such films by chemical vapor deposition using alkylsiloxane oligomers precursors with ozone.... | 10/15/2002 |
| 6451391 | Thin film formation method In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 10... | 09/17/2002 |
| 6420644 | Solar battery and method of treating a board for a solar battery A solar battery having a board with a surface with a plurality of spherical segments projecting from the board surface. A primary electrode layer is provided on the board surface and the plurality of spherical segments. A semiconductor layer is provided o... | 07/16/2002 |
| 6379510 | Method of making a low voltage micro-mirror array light beam switch A method of making a micro-mirror light beam switch having a thin flexible movable support member for supporting a thin central reflective mirror surface thereon and for supporting a plurality of thin unimorph piezoelectric cantilevered mirror actuators m... | 04/30/2002 |
| 6362021 | Silicon thin-film, integrated solar cell, module, and methods of manufacturing the same A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein "d" is the grain diameter and "t" is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such ... | 03/26/2002 |
| 6335288 | Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching condition... | 01/01/2002 |
| 6274008 | Integrated process for copper via filling A target and magnetron for a plasma sputter reactor. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volu... | 08/14/2001 |
| 6214706 | Hot wire chemical vapor deposition method and apparatus using graphite hot rods A hot wire chemical vapor deposition method and apparatus for fabricating high quality amorphous, micro-crystalline, and poly-crystalline thin film silicon, or related materials, devices and large area modules is described. A silane gas impinges upon a ho... | 04/10/2001 |
| 6207574 | Method for fabricating a DRAM cell storage node A dynamic random access memory (DRAM) cell storage node and a fabricating method thereof are provided. A storage contact plug 118 is formed in a first insulating layer 104 on a semiconductor substrate. A second insulating layer 110, a material layer 112, ... | 03/27/2001 |
| 6187691 | Method of forming film on semiconductor substrate in film-forming apparatus A thin film is formed on a substrate in a film-forming apparatus which has upper and lower electrodes between which radio-frequency power is applied in a processing chamber, and a heater is used to heat the lower electrode on which the substrate is loaded... | 02/13/2001 |
